158 results on '"Nathan, M. I."'
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2. Oxidative enzyme activation of cellulose substrates for surface modification
3. Electrical and Magnetic Characteristics of MBEGrown GaMnN
4. A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
5. (111)B-oriented AlAs/GaAs/AIAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system
6. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-AlGaN/GaN heterostructures grown on sapphire substrates
7. Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices.
8. Raman Spectra of Amorphous Semiconductors Prepared by Ion Bombardment
9. Schottky barrier height dependence on the compensation doping in the interfacial Si layer of Al/Si/n:GaAs Schottky diodes.
10. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation...
11. Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal...
12. Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses.
13. Piezoelectric effect in (001)- and (111)-oriented double-barrier resonant tunneling devices.
14. Schottky barrier height modification on n- and p-type GaInP with thin interfacial Si.
15. Uniaxial stress dependence of the properties of the DX center in n-Al0.32Ga0.68As.
16. Unpinned GaAs Schottky barriers with an epitaxial silicon layer.
17. Uniaxial stress effects on the AlAs/GaAs double-barrier heterostructures.
18. Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers.
19. Barrier heights and electrical properties of intimate metal-AlGaAs junctions.
20. Light Emission from Reverse Biased GaAs and InP p-n Junctions.
21. Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
22. Uniaxial stress dependence of the current-voltage characteristics of n-type AlAs/GaAs/AlAs tunnel diodes at 77 K.
23. DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors.
24. Novel high mobility Ga0.51In0.49P/GaAs modulation-doped field-effect transistor structures grown using a gas source molecular beam epitaxy.
25. AlGaN metal‐semiconductor‐metal structure for pressure sensing applications
26. Magnetism in n‐type GaMnN grown by molecular beam epitaxy
27. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN
28. Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer
29. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction
30. GaN based quantum dot heterostructures.
31. Bias-assisted photoelectrochemical etching of p-GaN at 300 K
32. Interface control and band offset at the Ga[sub 0.52]In[sub 0.48]P on GaAs heterojunction
33. GaN based quantum dot heterostructures
34. Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements
35. Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions
36. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method
37. 4 × 4 and 2 × 2 matrix formulations for the optics in stratified and biaxial media
38. Spectroscopic applications and frequency locking of THz photomixing with distributed-Bragg-reflector diode lasers in low-temperature-grown GaAs
39. Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements
40. 4×4 Matrix Method for Biaxial Media and Its Application to Liquid Crystal Displays
41. Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system
42. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
43. Piezoelectric effects in (001)-oriented double barrier resonant tunneling structures
44. Schottky barrier height modification onn‐ andp‐type GaInP with thin interfacial Si
45. Silicon‐induced local interface dipole in Al/GaAs(001) Schottky diodes
46. Minority electron mobility and lifetime in the p+GaAs base of AlGaAs/GaAs heterojunction bipolar transistors
47. Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy
48. Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz–Keldysh oscillations
49. dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
50. Uniaxial stress dependence of the properties of theDXcenter inn‐Al0.32Ga0.68As
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