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The parameters of the plastic injection molding process have been investigated for the manufacture of a 64 oz. ultra-thin polypropylene bucket. The 3 main parameters, such as injection speed, melting temperature, holding pressure, were investigated to study their effect on the physical appearance and compressive strength. The orthogonal array of Taguchi’s L9 (33) was used to carry out the experimental plan. The physical properties were measured and the compressive strength was determined using linear regression analysis. The differential scanning calorimeter (DSC) was used to analyze the crystalline structure of the product. The optimization results show that the proposed approach can help engineers identify optimal process parameters and achieve competitive advantages of energy consumption and product quality. In addition, the injection molding of the product includes 24 mm of shot stroke, 1.47 mm position transfer, 268 rpm screw speed, injection speed 100 mm/s, 172 ton clamping force, 800 kgf holding pressure, 0.9 s holding time and 1.4 s cooling time, make the products in the shape and proportion of the product satisfactory. The parameters of influence are injection speed 71.07%, melting temperature 23.31% and holding pressure 5.62%, respectively. The compressive strength of the product was able to withstand a pressure of up to 839 N before the product became plastic. The low melting temperature was caused by the superior crystalline structure of the super-ultra-thin wall product which leads to a lower compressive strength. Keywords: Super ultra-thin wall, Plastic packaging, Injection molding, Injection parameter

The Seebeck coefficient, a key parameter describing a material's thermoelectric performance, is generally difficult to measure, and no intrinsic calibration standard exists. Quantum dots and single electron tunneling devices with sharp transmission resonances spaced by many kT have a material-independent Seebeck coefficient that depends only on the electronic charge and the average device temperature T. Here we propose the use of a quantum dot to create an intrinsic, nanoscale standard for the Seebeck coefficient and discuss its implementation.

The Seebeck coefficient S is an important performance characteristic of thermoelectric materials. In this paper we establish the fact that quantum dots and single-electron tunneling devices with narrow, well-spaced energy levels and sharp transmission resonances have a Seebeck coefficient independent of material parameters. By employing a delta function for the transmission resonances we arrive at an intrinsic expression for S in terms of the fundamental electronic charge e. We further confirm the validity of our result in the case of a transmission resonance with finite width.

We present a method for determining a temperature differential across a quantum dot. If the device has a transmission function with sufficiently spaced resonant energies, then one can distinguish electrons which have tunneled from the hot lead, and those which have tunneled from the cold lead. By measuring the thermocurrent as the electrochemical potential is swept through a resonant energy level, information about the transmission function obtained from conductance measurements can be used to deduce the temperature differential of the electron gas across the device.

Low-dimensional electronic systems in thermoelectrics have the potential to achieve high thermal-to-electric energy conversion efficiency. A key measure of performance is the efficiency when the device is operated under maximum power conditions. Here we study the efficiency at maximum power, in the absence of phonon-mediated heat flow, of three low-dimensional, thermoelectric systems: a zero-dimensional quantum dot with a Lorentzian transmission resonance of finite width, a one-dimensional (1D) ballistic conductor, and a thermionic (TI) power generator formed by a two-dimensional energy barrier. In all three systems, the efficiency at maximum power is independent of temperature, and in each case a careful tuning of relevant energies is required to achieve maximal performance. We find that quantum dots perform relatively poorly under maximum power conditions, with relatively low efficiency and small power throughput. Ideal one-dimensional conductors offer the highest efficiency at maximum power (36% of the Carnot efficiency). Whether 1D or TI systems achieve the larger maximum power output depends on temperature and area filling factor. These results are also discussed in the context of the traditional figure of merit ZT. (Less)

Nanoscale thermoelectric materials are at the center of current thermoelectric research because they offer higher efficiency than bulk thermoelectrics, which has been attributed to energy selectivity via a strongly modulated electron density of states and lattice thermal conductivity reduction. Our research aims to understand better the efficiency of thermally-induced electron transport using a quantum dot as a model system and to progress toward engineering high-efficiency nanoscale thermoelectric devices for power generation. We discuss here a device used to measure the electronic efficiency of nanoscale thermoelectric processes.

We present a method for the measurement of a temperature differential across a single quantum dot that has transmission resonances that are separated in energy by much more than the thermal energy. We determine numerically that the method is accurate to within a few percent across a wide range of parameters. The proposed method measures the temperature of the electrons that enter the quantum dot and will be useful in experiments that aim to test theory which predicts quantum dots are highly-efficient thermoelectrics., 3 pages, 4 Figures

Quantum dots are model systems for quantum thermoelectric behavior because of their ability to control and measure the effects of electron-energy filtering and quantum confinement on thermoelectric properties. Interestingly, nonlinear thermoelectric properties of such small systems can modify the efficiency of thermoelectric power conversion. Using quantum dots embedded in semiconductor nanowires, we measure thermovoltage and thermocurrent that are strongly nonlinear in the applied thermal bias. We show that most of the observed nonlinear effects can be understood in terms of a renormalization of the quantum-dot energy levels as a function of applied thermal bias and provide a theoretical model of the nonlinear thermovoltage taking renormalization into account. Furthermore, we propose a theory that explains a possible source of the observed, pronounced renormalization effect by the melting of Kondo correlations in the mixed-valence regime. The ability to control nonlinear thermoelectric behavior expands the range in which quantum thermoelectric effects may be used for efficient energy conversion. © IOP Publishing and Deutsche Physikalische Gesellschaft., Financially supported by ONR, ONR Global, the Swedish Energy Agency (grant number 32920–1), the Swedish Research Council (VR), the Thai government, NSF-IGERT, the Knut and Alice Wallenberg Foundation, the MINECO (grant number FIS2011-23526), the Latvian Council of Science (grant number 146/2012), the National Basic Research Program of the Ministry of Science and Technology of China (grant numbers 2012CB932703 and 2012CB932700), the National Natural Science Foundation of China (grant number 91221202) and the Nanometer Structure Consortium at Lund University (nmC@LU).