45 results on '"Negrov, D. A."'
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2. New method of SPP excitation based on metal photoluminescence
3. Broadband High-Resolution Imaging Spectrometers for the Soft X-Ray Range
4. Diffraction-Limited Focusing of Plasmonic Wave by a Parabolic Mirror
5. Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
6. Using advanced pressing technology for the wear resistance of polytetrafluoroethylene.
7. Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
8. Flexible HfO2-based ferroelectric memristor
9. Reconfigurable and scalable architecture of a system for digital processing of broadband radar signals
10. Integration of functional elements of resistive nonvolative memory with 1T-1R topology
11. Development of Polymer Composites Based on Polytetrafluoroethylene and Detonation Nanodiamonds
12. Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films
13. Development of a Technology for the Fabrication of Articles Made of Complex-Modified Polytetrafluoroethylene for Dry Friction Assemblies
14. The exploration of a structure change and properties of composite based on polytetrafluoroethylene activated by ultrasonic vibrations.
15. An ultra-broadband wavelength-selective anisotropic plasmonic metasurface
16. Manufacture of slip bearings from PTFE-based composite
17. Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction
18. Surface plasmon wave propagation length measurement at a telecom wavelength
19. A new method of manufacturing products from polymeric composite materials
20. The ion implantation influence on the microhardness
21. Increasing the Hardness and Wear Resistance of Tungstenless Hard Alloy Working under the Abrasive Wear and Dynamic Loads.
22. Development of Rational Heat Treatment Modes for Hot-Rolled Steel Bends.
23. Study of ferroelectric and elastic properties of ferroelectric capacitors based on hafnium oxide films by Band Excitation techniques
24. Electric field-induced phase transformations in ferroelectric polycrystalline Hf0.5Zr0.5O2 thin films
25. The effect of ultrasonic activation on the formation of polytetrafluoroethylene modified by detonation nanodiamonds
26. A method of quality control of plain bearings by their thermophysical properties
27. Extracorporeal acoustic impact for prevention ureteral stent’s encrustation
28. Avulsion Fractures Osteosynthesis in Patients with Normal Bone Mineral Density and Osteoporosis
29. Enhancement of local electromagnetic fields by periodic optical resonators
30. 2D and 2.5D plasmonic metastructures for surface-enhanced infrared absorption applications: fabrication and properties
31. Mechanical and operational properties of boron nitride-modified polytetrafluoroethylene
32. Influence of impurities on structure and reliability of gear pump
33. Effect of ultrasonic activation on structure formation of modified boron nitride polytetrafluoroethylene
34. The influence of ultrasonic exposure on polytetrafluoroethylene structure modified with boron nitride
35. An approximate backpropagation learning rule for memristor based neural networks using synaptic plasticity
36. Imaging diffraction VLS spectrometer for a wavelength range λ > 120 Å
37. The use of ultrasonic exposure for the modification of synthesized composite materials
38. Technology of the production components of friction units from polymeric composite materials
39. PT065 - Extracorporeal acoustic impact for prevention ureteral stent’s encrustation
40. Corrigendum to “Confinement-free annealing induced ferroelectricity in Hf0·5Zr0.5O2 thin films” [Microelectron. Eng. 147 (2015) 15–18]
41. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
42. Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbars
43. RESEARCH OF INFLUENCE OF ENERGY OF ULTRASONIC VIBRATIONS ON STRUCTURE OF COMPOSITION MATERIAL
44. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks.
45. Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfAlO oxide films.
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