101 results on '"Nener, Brett D."'
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2. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
3. pH-dependent surface properties of the gallium nitride – Solution interface mapped by surfactant adsorption
4. Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes
5. AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-based Sensors
6. Prediction of Anomalous Variation in GaN-based Chemical Sensors
7. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
8. Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors
9. Dynamic Pressure/Temperature Behaviour of GaN-Based Chemical Sensors
10. Effect of MBE Growth Conditions on Multiple Electron Transport in InN
11. High UV/solar rejection rations in GaN/AlGaN/GaN P-I-N photodiodes
12. An Ant Colony Inspired Multi-Bernoulli Filter for Cell Tracking in Time-Lapse Microscopy Sequences
13. Parameter evaluation in automated digital deep-level transient spectroscopy (DLTS)
14. Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors
15. Multi-Sensor Space Debris Tracking for Space Situational Awareness With Labeled Random Finite Sets
16. XPS/NEXAFS spectroscopic and conductance studies of glycine on AlGaN/GaN transistor devices
17. Ca 2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes
18. Measurement of low-altitude infrared propagation
19. Application of Unscented Transform in Frequency Control of a Complex Power System Using Noisy PMU Data
20. MEMS-Based Tunable Fabry–Perot Filters for Adaptive Multispectral Thermal Imaging
21. Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode
22. Recent developments towards low-cost MEMS spectrometers
23. Efficient sub-harmonic phase-screen generation for modelling of free-space laser communications
24. Erratum: Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy [Phys. Status Solidi C4, 2423-2427 (2007)]
25. Biocompatibility of semiconducting AlGaN/GaN material with living cells
26. Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress
27. Scintillation index of the free space optical channel: Phase screen modelling and experimental results
28. Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
29. Cell growth and attachment to AlGaN surfaces for biosensor applications
30. Multiple carrier transport in N-face indium nitride
31. Effect of MBE Growth Conditions on Multiple Electron Transport in InN
32. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
33. Characterisation of Electron Transport in MBE Grown Indium Nitride
34. Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
35. Mitigation of scintillation noise by common mode rejection
36. Analytical models of optical refraction paths in the lower atmosphere (Invited Paper)
37. Numerical experiments in atmospheric scintillation correlation for applications in dual channel optical communications
38. Investigations of ohmic contacts to reactive ion-etched p-type GaN
39. Magnetoresistance characteristics of gamma-irradiated Al 0.35 Ga 0.65 N/GaN HFETs
40. Analytical models of optical refraction in the troposphere
41. Analytical models of optical refraction paths in the lower atmosphere (Invited Paper).
42. Mitigation of scintillation noise by common mode rejection.
43. Numerical experiments in atmospheric scintillation correlation for applications in dual channel optical communications.
44. Magnetoresistance characteristics of gamma-irradiated Al0.35 Ga0.65 N/GaN HFETs.
45. Simple wet etching of GaN
46. Simple wet etching of GaN.
47. Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology
48. Relative infrared transmission measurements of EOPACE
49. Passivation and surface effects in long-wavelength infrared HgCdTe photoconductors
50. Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology.
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