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This paper describes the characterization of the quantum anomalous Hall (QAH) effect resistor with Chromium-doped Bismuth Antimony Telluride with the efforts in coupling directly to a programmable Josephson voltage standard (PJVS) at zero magnetic field. The precision measurement of the QAH resistance was performed under the presence of microwave signal biased to the PJVS. Understanding such effect will help to improve the experimental set-up for integrating multiple quantum electrical standards in a single system.

This work reports the experimental demonstration of single-slit diffraction exhibited by electrons propagating in encapsulated graphene with an effective de Broglie wavelength corresponding to their attributes as massless Dirac fermions. Nanometer-scale device designs were implemented to fabricate a single-slit followed by five detector paths. Predictive calculations were also utilized to readily understand the observations reported. These calculations required the modeling of wave propagation in ideal case scenarios of the reported device designs to more accurately describe the observed single-slit phenomenon. This experiment was performed at room temperature and 190 K, where data from the latter highlighted the exaggerated asymmetry between electrons and holes, recently ascribed to slightly different Fermi velocities near the K point. This observation and device concept may be used for building diffraction switches with versatile applicability.

Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, which is governed by the interplay of Coulomb interactions and interactions with acoustic and optical phonons. Our data provide clear indications of a sizable carrier multiplication. Moreover, the oscillation pattern and the saturation behavior of PC are manifestations of not only the chiral transport properties of carriers in the quantum Hall regime but also the chirality change at the Dirac point, a characteristic feature of a relativistic quantum Hall effect.

The dynamics of a swinging payload suspended from a stationary crane, an unwanted phenomenon on a construction site, can be described as a simple pendulum. However, an experienced crane operator can deliver a swinging payload and have it stop dead on target in a finite amount of time by carefully modulating the speed of the trolley. Generally, a series of precisely timed stop and go movements of the trolley are implemented to damp out the kinetic energy of the simple harmonic oscillator. Here, this mysterious crane operator's trick will be revealed and ultimately generalized to capture the case where the load is initially swinging. Finally, this modus operandi is applied to a torsion balance used to measure G , the universal gravitational constant responsible for the swinging of the crane's payload in the first place.

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h -BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 / h -BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h -BN layer. We further characterized the superconducting current and voltage ( I - V ) relationships and Fraunhofer pattern of the NbSe 2 / h -BN/Nb junction. Notably, we demonstrated the critical current noise (1/ f noise power) in the h -BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h -BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications., (© 2021 IOP Publishing Ltd.)

We report the 2018 self-consistent values of constants and conversion factors of physics and chemistry recommended by the Committee on Data of the International Science Council. The recommended values can also be found at physics.nist.gov/constants. The values are based on a least-squares adjustment that takes into account all theoretical and experimental data available through 31 December 2018. A discussion of the major improvements as well as inconsistencies within the data is given. The former include a decrease in the uncertainty of the dimensionless fine-structure constant and a nearly two orders of magnitude improvement of particle masses expressed in units of kg due to the transition to the revised International System of Units (SI) with an exact value for the Planck constant. Further, because the elementary charge, Boltzmann constant, and Avogadro constant also have exact values in the revised SI, many other constants are either exact or have significantly reduced uncertainties. Inconsistencies remain for the gravitational constant and the muon magnetic-moment anomaly. The proton charge radius puzzle has been partially resolved by improved measurements of hydrogen energy levels.

Here, we report the effects of enhanced magnetic fields resulting from type-II superconducting NbTiN slabs adjacent to narrow Hall bar devices fabricated from epitaxial graphene. Observed changes in the magnetoresistances were found to have minimal contributions from device inhomogeneities, magnet hysteresis, electron density variations along the devices, and transient phenomena. We hypothesize that Abrikosov vortices, present in type-II superconductors, contribute to these observations. By determining the London penetration depth, coupled with elements of Ginzburg-Landau theory, one can approximate an upper bound on the effect that vortex densities at low fields (< 1T) have on the reported observations. These analyses offer insights into device fabrication and how to utilize the Meissner effect for any low-field and low-temperature applications using superconductors.

We report the 2018 self-consistent values of constants and conversion factors of physics and chemistry recommended by the Committee on Data of the International Science Council (CODATA). The recommended values can also be found at physics.nist.gov/constants. The values are based on a least-squares adjustment that takes into account all theoretical and experimental data available through 31 December 2018. A discussion of the major improvements as well as inconsistencies within the data is given. The former include a decrease in the uncertainty of the dimensionless fine-structure constant and a nearly two orders of magnitude improvement of particle masses expressed in units of kg due to the transition to the revised International System of Units (SI) with an exact value for the Planck constant. Further, because the elementary charge, Boltzmann constant, and Avogadro constant also have exact values in the revised SI, many other constants are either exact or have significantly reduced uncertainties. Inconsistencies remain for the gravitational constant and the muon magnetic-moment anomaly. The proton charge radius puzzle has been partially resolved by improved measurements of hydrogen energy levels.

As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000 Ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust ν = 2 filling factor in array devices at relative precision better than 10 -8 . Broad tunability of the carrier density also enables investigation of the ν = 6 plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry.

Tantalum diselenide (TaSe 2 ) is a metallic transition metal dichalcogenide whose structure and vibrational behavior strongly depend on temperature and thickness, and this behavior includes the emergence of charge density wave (CDW) states at very low temperatures. In this work, observed Raman modes for mono- and bilayer are described across several spectral regions and compared to those seen in the bulk case. These modes, which include an experimentally observed forbidden Raman mode and low-frequency CDWs, are then matched to corresponding vibrations predicted by density functional theory (DFT). The reported match between experimental and computational results supports the presented vibrational visualizations of these modes. Support is also provided by experimental phonons observed in additional Raman spectra as a function of temperature and thickness. These results highlight the importance of understanding CDWs since they are likely to play a fundamental role in the future realization of solid-state quantum information platforms based on nonequilibrium phenomena., Competing Interests: The authors declare no competing financial interest.

We report on nonreciprocity observations in several configurations of graphene-based quantum Hall devices. Two distinct measurement configurations were adopted to verify the universality of the observations (i.e., two-terminal arrays and four-terminal devices). Our findings determine the extent to which epitaxial graphene anisotropies contribute to the observed asymmetric Hall responses. The presence of backscattering induces a device-dependent asymmetry rendering the Onsager-Casimir relations limited in their capacity to describe the behavior of such devices, except in the low-field classical regime and the fully quantized Hall state. The improved understanding of this quantum electrical process broadly limits the applicability of the reciprocity principle in the presence of quantum phase transitions and for anisotropic two-dimensional materials., Competing Interests: The authors declare no competing interest.

Quantum Boltzmann formalism is employed to study the transport properties of strongly-coupled double layer systems that enable the formation of interlayer excitons and exciton condensation. The importance of exciton formation, dissociation, and condensation is highlighted in the context of thermoelectric power generation, and this mathematical inquiry provides an alternative methodology to calculate the thermoelectric efficiency given the conditions of exciton formation. The Onsager relation for the Coulomb drag resistivity is shown to be valid even when exciton condensation is present. In addition, it is found that the traditional thermoelectric figure of merit is no longer sufficient to predict the efficiency of thermoelectric power generation in the presented situations. This inquiry offers insights for designing double layer systems, including their interlayer interactions, with enhanced thermoelectric energy conversion efficiency.

Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.

This work presents one solution for long-term storage of epitaxial graphene (EG) in air, namely through the functionalization of millimeter-scale devices with chromium tricarbonyl - Cr(CO) 3 . The carrier density may be tuned reproducibly by annealing below 400 K due to the presence of Cr(CO) 3 . All tuning is easily reversible with exposure to air, with the idle, in-air, carrier density always being close to the Dirac point. Precision measurements in the quantum Hall regime indicate no detrimental effects from the treatment, validating the pursuit of developing air-stable EG-based QHR devices.

A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO) 3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single probe wired for two types of quantum standards - GaAs, the established material, and graphene, the newer material that may promote the development of more user-friendly equipment.

A mathematical approach is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the v = 2 plateau ( R H ≈ 12906 Ω) and take the form: a b R H . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.

The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe 2 and WSe 2 , followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry.

Metallic transition metal dichalcogenides, such as tantalum diselenide (TaSe2), display quantum correlated phenomena of superconductivity and charge density waves (CDW) at low temperatures. Here, the photophysics of 2H-TaSe 2 during CDW transitions is revealed by combining temperature-dependent, low-frequency Raman spectroscopy and density functional theory (DFT). The spectra contain amplitude, phase, and zone-folded modes that are assigned to specific phonons and lattice restructuring predicted by DFT calculations with superb agreement. The non-invasive and efficient optical methodology detailed here demonstrates an essential link between atomic-scale and microscopic quantum phenomena.

Monolayer epitaxial graphene (EG) has been shown to have clearly superior properties for the development of quantized Hall resistance (QHR) standards. One major difficulty with QHR devices based on EG is that their electrical properties drift slowly over time if the device is stored in air due to adsorption of atmospheric molecular dopants. The crucial parameter for device stability is the charge carrier density, which helps determine the magnetic flux density required for precise QHR measurements. This work presents one solution to this problem of instability in air by functionalizing the surface of EG devices with chromium tricarbonyl -Cr(CO) 3 . Observations of carrier density stability in air over the course of one year are reported, as well as the ability to tune the carrier density by annealing the devices. For low temperature annealing, the presence of Cr(CO) 3 stabilizes the electrical properties and allows for the reversible tuning of the carrier density in millimeter-scale graphene devices close to the Dirac point. Precision measurements in the quantum Hall regime show no detrimental effect on the carrier mobility., Competing Interests: Commercial equipment, instruments, and materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology or the United States government, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. The authors declare no competing interests.

In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν = 2 ( R H ≈ 12906 Ω) that take the form: a b R H . Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of R H . Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials., Competing Interests: Commercial equipment, instruments, and materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology or the United States government, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. The authors declare no competing interests.

This work presents precision measurements of quantized Hall array resistance devices using superconducting, crossover-free, multiple interconnections as well as graphene split contacts. These new techniques successfully eliminate the accumulation of internal resistances and leakage currents that typically occur at interconnections and crossing leads between interconnected devices. As a result, a scalable quantized Hall resistance array is obtained with a nominal value that is as precise and stable as that from single-element quantized Hall resistance standards.

We discuss how the impending redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The redefinition will no longer define a set of base units, but rather a set of constants of nature, such as the elementary charge, e . We point out that this list of constants need not be the only way to introduce students to the subject, either in class or in textbooks. We suggest an alternative way to introduce high school and undergraduate students to the redefined SI, by suggesting a list of experiments for some units; this list would be completely compatible with the redefined SI, and would have all of the same scientific and technological advantages. We demonstrate by questionnaire results that this alternative is more appealing to students. We hope to spur a discussion amongst teachers regarding this important topic for high school and undergraduate physics courses.

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text] with a relative uncertainty of 10 -7 . After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequently fabricated quantum Hall device is shown for example cases during a series of environmental exposures. Quantum Hall data acquired from a CYTOP encapsulation is also provided. Data from Raman spectroscopy, atomic force microscopy, and other electrical property trends are shown. Lastly, quantum Hall effect data are presented from devices with deposited Parylene C films measuring 10.7 μm and 720 nm. All data are relevant for Rigosi et al. [1].

Homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the one of most promising candidates for the advancement of quantized Hall resistance (QHR) standards. A remaining challenge for the electrical characterization of EG-based quantum Hall devices as a useful tool for metrology is that they are electrically unstable when exposed to air due to the adsorption of and interaction with atmospheric molecular dopants. The resulting changes in the charge carrier density become apparent by variations in the surface conductivity, the charge carrier mobility, and may result in a transition from n-type to p-type conductivity. This work evaluates the use of Parylene C and Parylene N as passivation layers for EG. Electronic transport of EG quantum Hall devices and non-contact microwave perturbation measurements of millimeter-sized areas of EG are both performed on bare and Parylene coated samples to test the efficacy of the passivation layers. The reported results, showing a significant improvement in passivation due to Parylene deposition, suggest a method for the mass production of millimeter-scale graphene devices with stable electrical properties., Competing Interests: Notes Commercial equipment, instruments, and materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology or the United States government, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. The authors declare no competing financial interest.

Two-dimensional (2D) materials such as graphene have become the focus of extensive research efforts in condensed matter physics. They provide opportunities for both fundamental research and applications across a wide range of industries. Ideally, characterization of graphene requires non-invasive techniques with single-atomic-layer thickness resolution and nanometer lateral resolution. Moreover, commercial application of graphene requires fast and large-area scanning capability. We demonstrate the optimized balance of image resolution and acquisition time of non-invasive confocal laser scanning microscopy (CLSM), rendering it an indispensable tool for rapid analysis of mass-produced graphene. It is powerful for analysis of 1-5 layers of exfoliated graphene on Si/SiO 2 , and allows us to distinguish the interfacial layer and 1-3 layers of epitaxial graphene on SiC substrates. Furthermore, CLSM shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping.

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride ( a -BN and h -BN) films. The a -BN is formed with pulsed laser deposition and the h -BN is grown with triethylboron (TEB) and NH 3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a -BN, and h -BN within the energy range of 1 eV to 8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h -BN heterostructure., Competing Interests: Conflict of Interest: The authors declare no competing financial interest.

We present simulations of quantum transport in graphene p-n junctions ( pn Js) in which moiré superlattice potentials are incorporated to demonstrate the interplay between pn Js and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pn J profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal- boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results., Competing Interests: The authors declare no competing financial interest.

We report the performance of a quantum Hall resistance standard based on epitaxial graphene maintained in a 5-T tabletop cryocooler system. This quantum resistance standard requires no liquid helium and can operate continuously, allowing year-round accessibility to quantized Hall resistance measurements. The ν = 2 plateau, with a value of R K /2, also seen as R H , is used to scale to 1 kΩ using a binary cryogenic current comparator (BCCC) bridge and a direct current comparator (DCC) bridge. The uncertainties achieved with the BCCC are such as those obtained in the state-of-the-art measurements using GaAs-based devices. BCCC scaling methods can achieve large resistance ratios of 100 or more, and while room temperature DCC bridges have smaller ratios and lower current sensitivity, they can still provide alternate resistance scaling paths without the need for cryogens and superconducting electronics. Estimates of the relative uncertainties of the possible scaling methods are provided in this report, along with a discussion of the advantages of several scaling paths. The tabletop system limits are addressed as are potential solutions for using graphene standards at higher currents.

Transition-metal dichalcogenides (TMDCs) have offered experimental access to quantum confinement in one dimension. In recent years, metallic TMDCs like NbSe 2 have taken center stage with many of them exhibiting interesting temperature-dependent properties such as charge density waves and superconductivity. In this paper, we perform a comprehensive optical analysis of NbSe 2 by utilizing Raman spectroscopy, differential reflectance contrast, and spectroscopic ellipsometry. These analyses, when coupled with Kramers-Kronig analysis, allow us to extract the dielectric functions of bulk and atomically thin NbSe 2 and relate them to the resonant behavior of the Raman spectra.

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Though much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density functional theory (DFT), to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV., Competing Interests: NOTES Commercial equipment, instruments, and materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology or the United States government, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. The authors declare no competing financial interest.

Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene (EG). A clean and simple process is used to produce large, precise areas of EG. Properties like the surface conductivity and dielectric loss tangent remain unstable when EG is exposed to air due to doping from molecular adsorption. Experimental results are reported on the extraction of the surface conductivity and dielectric loss tangent from data taken with a noncontact resonance microwave cavity, assembled with an air-filled, standard R100 rectangular waveguide configuration. By using amorphous boron nitride (a-BN) as an encapsulation layer, stability of EG's electrical properties under ambient laboratory conditions is greatly improved. Moreover, samples are exposed to a variety of environmental and chemical conditions. Both thicknesses of a-BN encapsulation are sufficient to preserve surface conductivity and dielectric loss tangent to within 10% of its previously measured value, a result which has essential importance in the mass production of millimeter-scale graphene devices demonstrating electrical stability., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices, with n-type doping level of the order of 10 12 cm -2 . Generally, electrical properties of EG, such as longitudinal resistivity, remain unstable when devices are exposed to air due to adsorption of molecular dopants, whose presence shifts the carrier density close to the Dirac point (<10 10 cm -2 ) or into the p-type regime. Here, we report experimental results on the use of amorphous boron nitride (a-BN) as an encapsulation layer, whereby EG can maintain its longitudinal resistivity and have its carrier density modulated. Furthermore, we exposed 12 devices to controlled temperatures of up to 85 °C and relative humidity of up to 85% and reported that an approximately 20 nm a-BN encapsulation thickness is sufficient to preserve their longitudinal resistivity to within 10% of the previously measured value. We monitored the electronic properties of our encapsulated and nonencapsulated EG samples by magnetotransport measurements, using a neodymium iron boron magnet. Our results have essential importance in the mass production of millimeter-scale graphene devices, with stable electrical properties.

A precise instrument, called a watt balance, compares mechanical power measured in terms of the meter, the second, and the kilogram to electrical power measured in terms of the volt and the ohm. A direct link between mechanical action and the Planck constant is established by the practical realization of the electrical units derived from the Josephson and the quantum Hall effects. We describe in this paper the fourth-generation watt balance at the National Institute of Standards and Technology (NIST), and report our initial determination of the Planck constant obtained from data taken in late 2015 and the beginning of 2016. A comprehensive analysis of the data and the associated uncertainties led to the SI value of the Planck constant, h = 6.626 069 83(22) × 10(-34) J s. The relative standard uncertainty associated with this result is 34 × 10(-9).

Using a watt balance and a frequency comb, a mass-energy equivalence is derived. The watt balance compares mechanical power measured in terms of the meter, the second, and the kilogram to electrical power measured in terms of the volt and the ohm. A direct link between mechanical action and the Planck constant is established by the practical realization of the electrical units derived from the Josephson and the quantum Hall effects. By using frequency combs to measure velocities and acceleration of gravity, the unit of mass can be realized from a set of three defining constants: the Planck constant h , the speed of light c , and the hyperfine splitting frequency of 133 Cs.

The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We determined the electromechanical properties of a suspended graphene layer by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements, as well as computational simulations of the graphene-membrane mechanics and morphology. A graphene membrane was continuously deformed by controlling the competing interactions with a STM probe tip and the electric field from a back-gate electrode. The probe tip-induced deformation created a localized strain field in the graphene lattice. STS measurements on the deformed suspended graphene display an electronic spectrum completely different from that of graphene supported by a substrate. The spectrum indicates the formation of a spatially confined quantum dot, in agreement with recent predictions of confinement by strain-induced pseudomagnetic fields.

The NIST watt balance experiment is being completely rebuilt after its 1998 determination of the Planck constant. That measurement yielded a result with an approximately 1×10(-7) relative standard uncertainty. Because the goal of the new incarnation of the experiment is a ten-fold decrease in uncertainty, it has been necessary to reexamine many sources of systematic error. Hysteresis effects account for a substantial portion of the projected uncertainty budget. They arise from mechanical, magnetic, and thermal sources. The new experiment incorporates several improvements in the apparatus to address these issues, including stiffer components for transferring the mass standard on and off the balance, better servo control of the balance, better pivot materials, and the incorporation of erasing techniques into the mass transfer servo system. We have carried out a series of tests of hysteresis sources on a separate system, and apply their results to the watt apparatus. The studies presented here suggest that our improvements can be expected to reduce hysteresis signals by at least a factor of 10-perhaps as much as a factor of 50-over the 1998 experiment.