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Background: ABCB1 polymorphisms could predict treatment results of taxane therapy in several malignancies. FCGR2A and FCGR3A polymorphisms were associated with clinical outcomes in several diseases after treatment with monoclonal antibody drugs which had antibody-dependent cell-mediated cytotoxicity activity. These polymorphisms could be possible predictive markers after taxane plus trastuzumab (TH) chemotherapy in patients with HER-2-positive metastatic breast cancer (MBC). Methods: Fifty-seven patients with HER-2 FISH positive MBC who received TH chemotherapy as the 1st-line treatment were enrolled. We analyzed 5 polymorphisms using DNA from peripheral blood mononuclear cells: ABCB1 1236C>T (rs1128503), ABCB1 2677G>T/A (rs2032582), ABCB1 3435C>T (rs1045642), FCGR2A 131H/R (rs1801274), and FCGR3A 158V/F (rs396991), then correlated them to treatment results of patients. Results: Among 57 patients, 22 patients (38.6%) received weekly paclitaxel plus trastuzumab, 26 patients (45.6%) tri-weekly paclitaxel plus trastuzumab, and 9 patients (15.8%) tri-weekly docetaxel plus trastuzumab. After a median follow-up of 30.6 (range, 0.6-75.9) months, median progression-free survival (PFS) was 15.1 (95% confidence interval (CI), 10.3-19.8) months. ABCB1 2677T allele carriers had longer PFS than the others (42.1 (95% CI, 12.7-71.4) months vs. 13.0 (95% CI, 10.6-15.4) months; p=0.037) along with a tendency toward higher response rate (RR) (86.4% vs. 76.0%; p=0.470) and longer overall survival (OS) (54.7 (95% CI, 43.0-66.4) months vs. 38.9 (95% CI, 18.1-59.7) months; p=0.057). In addition, ABCB1 3435CC genotype carriers had shorter PFS than the others (13.0 (95% CI, 10.8-15.2) months vs. 19.1 (95% CI, 0.0-38.5) months; p=0.039) along with a tendency toward lower RR (78.6% vs. 100%; p=0.567) and shorter OS (38.9 (95% CI, 19.7-58.1) months vs. 54.7 (95% CI, 43.0-66.4) months; p=0.093). ABCB1 1236C>T, FCGR2A 131H/R, and FCGR3A 158V/F were not significantly associated with RR, PFS, and OS. None of these polymorphisms were associated with any grades of hematologic or cardiac toxicities. Conclusions: Our results support that ABCB1 2677G>T/A and 3435C>T may have predictive roles after the 1st-line TH chemotherapy in patients with HER-2-positive MBC. In contrast, ABCB1 1236C>T, FCGR2A 131H/R, and FCGR3A 158V/F could not predict response after TH treatment. Citation Information: Cancer Res 2010;70(24 Suppl):Abstract nr P2-09-36.

This study reports the enhanced electrical properties of InGaZnO 4 thin film transistors (TFTs) with sputter-deposited poly(methyl methacrylate) (PMMA)/Ba 0.6 Sr 0.4 TiO 3 (BST) stacked gate dielectrics. A noticeable reduction in the leakage current density (∼10 -8 A/cm 2 at 0.3 MV) was achieved by coating a PMMA overlayer. The InGaZnO 4 TFTs utilizing the PMMA (30 nm)/BST (270 nm) stacked gate dielectrics exhibited a high on/off current ratio of 2.6 × 10 6 , a high field effect mobility of 10.2 cm 2 /V · s, and a low threshold voltage of 1.1 V. Using stacked gate dielectric layers, we realized the low voltage operating InGaZnO 4 TFTs on a poly(ethylene terephthalate) substrate.

We investigated the indium doping effects on ZnO thin film using radio frequency (rf) magnetron sputtering and rapid thermal annealing. The structural and electrical properties of indium doped ZnO thin films were measured by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and Hall effect measurement. Thin films were deposited at a high temperature of 800°C in order to improve the crystal quality and were annealed for a short time of only 3 min, sufficient time to activate the dopants. The structural properties of undoped and indium doped films were considerably improved with increasing oxygen gas in plasma. Indium doping also significantly increased the electron concentration, making the films heavily n-type. However, the crystallinity and surface roughness of the films degraded and the mobility decreased with increasing indium doping content, likely as a result of the formation of smaller grain size. From this study, on the basis of the structural and electrical properties of fabricated film, the best electrical properties have been obtained for 0.3 atom % indium doped ZnO thin film. This thin film, with a similar crystalline structure to undoped ZnO films, which presents the electron concentration of 1.296 X 10 19 cm -3 , resistivity of 0.0121 Ω cm and mobility of 39.71 cm 2 /V s, can be considered for application to light emitting diodes.