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Your search keyword '"Niedernostheide, F.-J."' showing total 191 results
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191 results on '"Niedernostheide, F.-J."'

4. Mechanisms of spatial current-density instabilities in $p^+ - p^- - n - p^+ -n^{++}$ structures

Author

Gorbatyuk, A. V. and Niedernostheide, F. -J.

Subjects
Nonlinear Sciences - Pattern Formation and Solitons
Abstract

Semiconductor $p^+ - p^- - n - p^+ - n^{++}$ structures with large junction and contact areas are treated as 1 \times 2-dimensional active media, in which self-organized pattern formation can be expected. The local bistable behavior of the structures may emanate from two different mechanisms both governed by a nonlinear current feedback-loop between the electrons and holes injected from the outer layers. By considering the device to be composed of an active subsystem with negative differential resistance and a passive resistive layer with positive differential resistance an analytical approach is suggested to understand and describe the corresponding physical mechanisms in a self-consistent way. Analytical solutions of the derived model equations allow a description of homogeneous stationary states and yield explicit expressions of the current-density vs. voltage characteristics of the whole structure and its subsystems. A stability analysis of the homogeneous states with respect to two-dimensional transversal harmonic fluctuations is performed for the two cases under study. The resulting dispersion relations allow two different types of instability. While the first one is of Ridley's type which is characteristic for any spatially extended electrical system with negative differential resistance, the second type can be considered as a solid-state analogue of Turing's instability known as a generic instability mechanism which may lead, e. g., to the formation of periodic patterns., Comment: Submitted to Phys. Rev. B, 6 figs

Published
1999
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5. Formation of Spatio-Temporal Structures in Semiconductors

Author

Schöll, E., Niedernostheide, F. J., Parisi, J., Prettl, W., Purwins, H. G., Beig, R., editor, Ehlers, J., editor, Frisch, U., editor, Hepp, K., editor, Jaffe, R. L., editor, Kippenhahn, R., editor, Ojima, I., editor, Weidenmüller, H. A., editor, Wess, J., editor, Zittartz, J., editor, Beiglböck, W., editor, Busse, Friedrich H., and Müller, Stefan C.

Published
1998
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6. Synergetic hardware concepts for self-organizing neural networks

Author

Ruwisch, D., Bode, M., Schulze, H.-J., Niedernostheide, F.-J., Araki, H., editor, Brézin, E., editor, Ehlers, J., editor, Frisch, U., editor, Hepp, K., editor, Jaffe, R. L., editor, Kippenhahn, R., editor, Weidenmüller, H. A., editor, Wess, J., editor, Zittartz, J., editor, Beiglböck, W., editor, Lehr, Sabine, editor, Parisi, Jürgen, editor, Müller, Stefan C., editor, and Zimmermann, Walter, editor

Published
1996
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33. Use of 300 mm magnetic Czochralski wafers for the fabrication of IGBTs

Author

Schulze, H. J., primary, Ofner, H., additional, Niedernostheide, F.-J., additional, Laven, J. G, additional, Felsl, H. P., additional, Voss, S., additional, Schwagmann, A., additional, Jelinek, M., additional, Ganagona, N., additional, Susiti, A., additional, Wubben, T., additional, Schustereder, W., additional, Breymesser, A., additional, Stadtmuller, M., additional, Schulz, A., additional, Kurz, T., additional, and Lukermann, F., additional

Published
2016
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34. Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Author

Laven, Johannes G., Schulze, H.‐J., Häublein, V., Niedernostheide, F.‐J., Schulze, H., Ryssel, H., and Frey, L.

Subjects
pacs:85.40.Ry, pacs:81.70.Jb, ddc:600, pacs:81.40.Ef, Technische Fakultät -ohne weitere Spezifikation
Abstract

The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen‐related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 1014 cm−2, the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 1014 cm−2, however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

Published
2012

37. Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures

Author

Vlasenko, N.A., Purwins, H.-G., Denisova, Z.L., Kononets, Ya.F., Niedernostheide, F.-J., Veligura, L.I., and Zuccaro, S.

Subjects
Condensed Matter::Materials Science
Abstract

An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. The influence of technological factors, affecting the properties TFELS, and driving conditions on both the patterns and the hysteresis of the charge- voltage dependence that is responsible for bistability of the TFELS are considered. The correlation between patterns and the shape of the hysteresis is analyzed. The physical processes with positive and negative feedback, which serve, respectively, as activator and inhibitor in the given dissipative system, are discussed.

Published
2004

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