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The advent of two-dimensional van der Waals materials is a frontier of condensed matter physics and quantum devices. However, characterizing such materials remains challenging due to the limitations of bulk material techniques, necessitating the development of specialized methods. In this study, we investigate the superconducting properties of Bi2Sr2CaCu2O8+x flakes by integrating them with a hybrid superconducting microwave resonator. The hybrid resonator is significantly modified by the interaction with the flake while maintaining a high quality factor. We also observe a significant upshift of the resonator frequency with increasing temperature, as well as a positive nonlinearity. These effects originate from a presently unknown microscopic mechanism within the flake, and can be modeled as a two-level system bath interacting with resonant mode. Our findings open a path for high quality hybrid circuits with van der Waals flakes for exploring novel materials and developing new devices for quantum technology., Comment: 5 pages, 4 figures with a supplementary material of 7 pages and 7 figures

Ferroic materials enable a multitude of emerging applications, and optimum functional properties are achieved when ferromagnetic and ferroelectric properties are coupled to a first-order ferroelastic transition. In bulk materials, this first-order transition involves an invariant habit plane, connecting coexisting phases: austenite and martensite. Theory predicts that this plane should converge to a line in thin films, but experimental evidence is missing. Here, we analyze the martensitic and magnetic microstructure of a freestanding epitaxial magnetic shape memory film. We show that the martensite microstructure is determined by an invariant line constraint using lattice parameters of both phases as the only input. This line constraint explains most of the observable features, which differ fundamentally from bulk and constrained films. Furthermore, this finite-size effect creates a remarkable checkerboard magnetic domain pattern through multiferroic coupling. Our findings highlight the decisive role of finite-size effects in multiferroics., Comment: 27 pages, 6 figures

Utilizing an interplay between band topology and intrinsic magnetism, the two-dimensional van der Waals (vdW) system MnBi_2Te_4 provides an ideal platform for realizing exotic quantum phenomena and offers great opportunities in the emerging field of antiferromagnetic spintronic technology. Yet, the fabrication of MnBi_2Te_4-based nanodevices is hindered by the high sensitivity of this material, which quickly degrades when exposed to air or to elevated temperatures. Here, we demonstrate an alternative route of fabricating vdW-MnBi_2Te_4-based electronic devices using the cryogenic dry transfer of a printable circuit embedded in an inorganic silicon nitride membrane. The electrical connections between the thin crystal and the top surface of the membrane are established through via contacts. Our magnetotransport study reveals that this innovative via contact approach enables exploring the MnBi_2Te_4-like sensitive 2D materials and engineering synthetic heterostructures as well as complex circuits based on the two-dimensional vdW systems.

Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a promising platform for advances in quantum computing and communication technologies. However, preserving two-dimensional superconductivity during device fabrication is an outstanding experimental challenge because of the fast degradation of the superconducting properties of two-dimensional flakes when they are exposed to moisture, organic sol vents, and heat. Here, to realize superconducting devices utilizing two-dimensional superconducting films, we develop a novel fabrication technique relying on the cryogenic dry transfer of printable circuits embedded into a silicon nitride membrane. This approach separates the circuit fabrication stage requiring chemically reactive substances and ionizing physical processes from the creation of the thin superconducting structures. Apart from providing electrical contacts in a single transfer step, the membrane encapsulates the surface of the crystal shielding it from the environment. The fabricated atomically thin Bi2Sr2CaCu2O8+x-based devices show high superconducting transition temperature Tc ~ 91 K close to that of the bulk crystal and demonstrate stable super conducting properties, Comment: 21 pages, 5 figures

PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis and compare the magnetotransport measurements of a poly- and single crystalline PrRhC2 sample. Using a remarkable and sophisticated technique, the PrRhC2 single crystal is prepared via focused ion beam cutting from the polycrystalline material. Our magnetometric and specific heat analyses reveal a non-collinear antiferromagnetic state below 20K, as well as short-range magnetic correlations and/or magnetic fluctuations well above the onset of the magnetic transition. The transport measurements on the PrRhC2 single crystal display an electrical resistivity peak at 3K and an anomalous Hall effect below 6K indicative of a net magnetization component in the ordered state. Furthermore, we study the angular variation of magnetoresistivities as a function of the angle between the in-plane magnetic field and the injected electrical current. We find that both the transverse and the longitudinal resistivities exhibit fourfold angular dependencies due to higher-order terms in the resistivity tensor, consistent with the orthorhombic crystal symmetry of PrRhC2. Our experimental results may be interpreted as features of topological Weyl semimetallic behavior in the magnetotransport properties.

Twisted van der Waals (vdW) heterostructures offer a unique platform for engineering the efficient Josephson coupling between cuprate thin crystals harboring the nodal superconducting order parameter. Preparing vdW heterostructures-based Josephson junction comprising stacked cuprates requires maintaining an ordered interface with preserved surface superconductivity. Here, we report the preparation of the Josephson junction out of the stacked Bi2Sr2CuCa2O8+d crystals using the cryogenic dry transfer technique and encapsulating the junction with an insulating layer, that protects the interface during the electrical contacts evaporation at the 10-6 mbar base pressure. We find that the Josephson critical current Ic has a maximum at low twist angles, comparable to that of the bulk intrinsic Josephson junctions, and is reduced by two orders of magnitude at twist angles close to 45{\deg}. The reduction of Ic occurs due to a mismatch between superconducting d-wave order parameters, which suppresses the direct Cooper pair tunneling.

Time-reversal symmetry breaking allows for a rich set of magneto-transport properties related to electronic topology. Focusing on the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$, we prepared micro-ribbons and investigated their transverse and longitudinal transport properties from 100 K to 180 K in magnetic fields $\mu_0 H$ up to 2T. We establish the presence of a magnetoresistance (MR) up to 1 % with a strong anisotropy depending the projection of $H$ on the easy-axis magnetization, which exceeds all other magnetoresistive effects. Based on detailed phenomenological modeling, we attribute the observed results with unexpected form of anisotropy to magnon MR resulting from magnon-electron coupling. Moreover, a similar angular dependence is also found in the transverse resistivity which we show to originate from the combination of ordinary Hall and anomalous Hall effects. Thus the interplay of magnetic and topological properties governs the magnetotransport features of this magnetic Weyl system., Comment: 7 pages, 6 figures

In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4-inch wafer was achieved by atomic layer deposition at 80 {\deg}C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (~20 pA), a high responsivity of (~4.3 Ampere per Watt at 405 nm and ~150 milli-Ampere per Watt at ~1550 nm), a peak detectivity of ~1.65*10^14 Jones, and a quick rise time of ~98 us under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II bandgap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection., Comment: 11 pages, 1 Table, 5 Figures, Supporting Information

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature., Comment: 20 pages, 6 figures

High-temperature cuprate superconductors-based van der Waals (vdW) heterostructures hold high technological promise. One of the obstacles hindering progress is the detrimental effect of disorder on the properties of Josephson junctions (JJ) realized by the vdW devices. Here we report the new method of fabricating twisted vdW heterostructures made of Bi2Sr2CuCa2O8+d, crucially improving the JJ characteristics, pushing them up to those of the intrinsic JJs in bulk samples. The method combines a cryogenic stacking using a solvent-free stencil mask technique and covering interface by the insulating hexagonal boron nitride crystals. Despite the high-vacuum condition down to 10-6 mbar in the evaporation chamber, the interface appears to be protected from water molecules during the in-situ metal deposition only when fully encapsulated. Comparing the current-voltage curves of encapsulated and unencapsulated interfaces, we reveal that the encapsulated interfaces' characteristics are crucially improved so that the corresponding JJs demonstrate high critical currents and sharpness of the superconducting transition comparable to those of the intrinsic JJs. Finally, we show that the encapsulated heterostructures are more stable in time.

Structural martensitic transformations enable various applications, which range from high stroke actuation and sensing to energy efficient magnetocaloric refrigeration and thermomagnetic energy harvesting. All these emerging applications benefit from a fast transformation, but up to now the speed limit of martensitic transformations has not been explored. Here, we demonstrate that a martensite to austenite transformation can be completed in under ten nanoseconds. We heat an epitaxial Ni-Mn-Ga film with a laser pulse and use synchrotron diffraction to probe the influence of initial sample temperature and overheating on transformation rate and ratio. We demonstrate that an increase of thermal energy drives this transformation faster. Though the observed speed limit of 2.5 x 10^{27} (Js)^{-1} per unit cell leaves plenty of room for a further acceleration of applications, our analysis reveals that the practical limit will be the energy required for switching. Our experiments unveil that martensitic transformations obey similar speed limits as in microelectronics, which are expressed by the Margolus-Levitin theorem., Comment: 24 pages paper and 12 pages supporting information

The Kitaev material $\alpha$-RuCl$_3$ is among the most prominent candidates to host a quantum spin-liquid state endowed with fractionalized excitations. Recent experimental and theoretical investigations have separately revealed the importance of both the magnetoelastic coupling and the magnetic anisotropy, in dependence of the applied magnetic field direction. In this combined theoretical and experimental research, we investigate the anisotropic magnetic and magnetoelastic properties for magnetic fields applied along the main crystallographic axes as well as for fields canted out of the honeycomb plane. We found that the magnetostriction anisotropy is unusually large compared to the anisotropy of the magnetization, which is related to the strong magnetoelastic $\widetilde{\Gamma'}$-type coupling in our \textit{ab-initio} derived model. We observed large, non-symmetric magnetic anisotropy for magnetic fields canted out of the honeycomb $ab$-plane in opposite directions, namely towards the $+c^*$ or $-c^*$ axes, respectively. The observed directional anisotropy is explained by considering the relative orientation of the magnetic field with respect to the co-aligned RuCl$_6$ octahedra. Magnetostriction measurements in canted fields support this non-symmetric magnetic anisotropy, however these experiments are affected by magnetic torque effects. Comparison of theoretical predictions with experimental findings allow us to recognize the significant contribution of torque effects in experimental setups where $\alpha$-RuCl$_3$ is placed in canted magnetic fields., Comment: main + supplementary, 12 + 3 pages, 6 + 4 figures, Accepted version

Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula $ 4 k_B T R $ for spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density $4 k_B T R (1 + ZT)$ at frequencies below a thermal cut-off frequency $f_T$, where $ZT$ is the dimensionless thermoelectric material figure of merit. The origin of the enhancement in voltage noise is thermoelectric coupling of temperature fluctuations. We use a wideband ($f_T\sim1$ kHz), integrated thermoelectric micro-device to experimentally confirm our findings. Measuring the $ZT$ enhanced voltage noise, we experimentally resolve temperature fluctuations with an amplitude of $0.8~\mu \mathrm{K} \mathrm{Hz}^{-1/2}$ at a mean temperature of 295 K. We find that thermoelectric devices can be used for thermometry with sufficient resolution to measure the fundamental temperature fluctuations described by the fluctuation-dissipation theorem.

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices., Comment: 17 pages, accepted at Materials Today Physics

Discoveries of ordered quantum states of matter are of great fundamental interest, and often lead to unique applications. The most well known example -- superconductivity -- is caused by the formation and condensation of pairs of electrons. A key property of superconductors is diamagnetism: magnetic fields are screened by dissipationless currents. Fundamentally, what distinguishes superconducting states from normal states is a spontaneously broken symmetry corresponding to long-range coherence of fermion pairs. Here we report a set of experimental observations in hole doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ which are not consistent with conventional superconducting behavior. Our specific-heat measurements indicate the formation of fermionic bound states when the temperature is lowered from the normal state. However, for $x \sim 0.8$, instead of the standard for superconductors, zero resistance and diamagnetic screening, for a range of temperatures, we observe the opposite effect: the generation of self-induced magnetic fields measured by spontaneous Nernst effect and muon spin rotation experiments. The finite resistance and the lack of any detectable diamagnetic screening in this state exclude the spontaneously broken symmetry associated with superconducting two-fermion correlations. Instead, combined evidence from transport and thermodynamic measurements indicates that the formation of fermionic bound states leads to spontaneous breaking of time-reversal symmetry above the superconducting transition temperature. These results demonstrate the existence of a broken-time-reversal-symmetry bosonic metal state. In the framework of a multiband theory, such a state is characterized by quartic correlations: the long-range order exists only for {\it pairs} of fermion pairs., Comment: 31 pages, 11 figures, supplemental information

While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses down to $t \approx 2$ nm. We evaluate the boundaries of our model, which are given by the separation and full width at half maximum of the individual Gaussians. Finally, we compare our results from two layer stacks with data from X-ray fluorescence spectroscopy, which is a standard method for measuring ultra thin films.

Martensitic materials show a complex, hierarchical microstructure containing structural domains separated by various types of twin boundaries. Several concepts exist to describe this microstructure on each length scale, however, there is no comprehensive approach bridging the whole range from the nano- up to the macroscopic scale. Here, we describe for a Ni-Mn-based Heusler alloy how this hierarchical microstructure is built from scratch with just one key parameter: the tetragonal distortion of the basic building block at the atomic level. Based on this initial block, we introduce five successive levels of nested building blocks. At each level, a larger building block is formed by twinning the preceding one to minimise the relevant energy contributions locally. This naturally explains the occurrence of different types of twin boundaries. We compare this scale-bridging approach of nested building blocks with experiments in real and reciprocal space. Our approach of nested building blocks is versatile as it can be applied to the broad class of functional materials exhibiting diffusionless transformations., Comment: 25 pages, including supplementary

Industrial processes release substantial quantities of waste heat, which can be harvested to generate electricity. At present, the conversion of low grade waste heat to electricity relies solely on thermoelectric materials, but such materials are expensive and have low thermodynamic efficiencies. Although thermomagnetic materials may offer a promising alternative, their performance remains to be evaluated, thereby hindering their real-world application. Here we evaluate the efficiency and cost effectiveness of thermomagnetic materials that can be used in motors, oscillators and generators for converting waste heat to electricity. Our analysis reveals that up to temperature differences of several 10 K the best thermomagnetic materials outperform thermoelectric materials. Importantly, we find that the price per watt for some thermomagnetic materials are much lower compared to present-day thermoelectrics and can become competitive with conventional power plants. The materials library that we present here enables the selection of the best available thermomagnetic materials for harvesting waste heat and gives guidelines for their future development., Comment: 24 pages, 5 figures (incl. 2 Ashby plots)

We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.

Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz frequency regime. Here we introduce an approach to nucleate and stabilize an AF domain wall in a synthetic antiferromagnet (SAF). We present experimental and micromagnetic studies of the magnetization reversal in [(Co/Pt)$_{X-1}$/Co/Ir]$_{N-1}$(Co/Pt)$_X$ SAFs, where interface induced perpendicular magnetic anisotropy (PMA) and AF interlayer exchange coupling (IEC) are completely controlled via the individual layer thicknesses within the multilayer stack. By combining strong PMA with even stronger AF IEC, the SAF reveals a collective response to an external magnetic field applied normal to the surface, and we stabilize the characteristic surface spin flop (SSF) state for an even number N of AF-coupled (Co/Pt)$_{X-1}$/Co multilayer blocks. In the SSF state our system provides a well-controlled and fully tunable vertical AF domain wall, easy to integrate as no single crystal substrates are required and with uniform 2D-magnetization in the film plane for further functionalization options, such as for example lateral patterning via lithography., Comment: 15 pages, 3 figures

Spin waves (SWs) in magnetic nanotubes have shown interesting nonreciprocal properties in their dispersion relation, group velocity, frequency linewidth and attenuation lengths. The reported chiral effects are similar to those induced by the Dzyaloshinskii-Moriya interaction, but originating from the dipole-dipole interaction. Here we show, that the isotropic-exchange interaction can also induce chiral effects in the SW transport; the so-called Berry phase of SWs. We demonstrate that with the application of magnetic fields, the nonreciprocity of the different SW modes can be tuned between the fully dipolar governed and the fully exchange governed cases, as they are directly related to the underlaying equilibrium state. In the helical state, due to the combined action of the two effects every single sign combination of the azimuthal and axial wave vectors leads to different dispersion, allowing for a very sophisticated tuning of the SW transport. A disentanglement of the dipole-dipole and exchange contributions so far was not reported for the SW transport in nanotubes. Furthermore, we propose a device based on coplanar waveguides that would allow to selectively measure the exchange or dipole induced SW nonreciprocities. In the context of magnonic applications, our results might encourage further developments in the emerging field of 3D magnonic devices using curved magnetic membranes., Comment: 6 pages, 3 figures

The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets., Comment: 5 pages, 4 figures

We study the impact of Ga ion exposure on the local and non-local magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam, and study the ensuing changes in the magnetoresistive response. We find that the non-local magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates the notion that pure spin currents carried by magnons are crucial for the non-local magnetotransport effects observed in magnetic insulator/metal nanostructures., Comment: 5 pages, 3 figures

Magnetic Weyl semimetals exhibit intriguing transport phenomena due to their non-trivial band structure. Recent experiments in bulk crystals of the shandite-type Co$_3$Sn$_2$S$_2$ have shown that this material system is a magnetic Weyl semimetal. To access the length scales relevant for chiral transport, it is mandatory to fabricate microstructures of this fascinating compound. We therefore have cut micro-ribbons (typical size $0.3~\times~3~\times~50$\mu$m^3$) from Co$_3$Sn$_2$S$_2$ single crystals using a focused beam of Ga$^{2+}$-ions and investigated the impact of the sample dimensions and possible surface doping on the magnetotransport properties. The large intrinsic anomalous Hall effect observed in the micro ribbons is quantitatively consistent with the one in bulk samples. Our results show that focused ion beam cutting can be used for nano-patterning single crystalline Co$_3$Sn$_2$S$_2$, enabling future transport experiments in complex microstructures of this Weyl semimetal.

Fine-tuning chemistry by doping with transition metals enables new perspectives for exploring Kitaev physics on a two-dimensional (2D) honeycomb lattice of {\alpha}-RuCl3, which is promising in the field of quantum information protection and quantum computation. The key parameters to vary by doping are both Heisenberg and Kitaev components of the nearest-neighbor exchange interaction between the Jeff = 1/2 Ru3+ spins, depending strongly on the peculiarities of the crystal structure. Here, we successfully grew single crystals of the solid solution series Ru1-xCrxCl3 with Cr3+ ions coupled to the Ru3+ Kitaev host using chemical vapour transport reaction. The Cr3+ substitution preserves the honeycomb type lattice of {\alpha}-RuCl3 with mixed occupancy of Ru/Cr sites, no hints on cationic order within the layers were found by single crystal X-ray diffraction and transmission electron microscopy investigations. In contrast to the high quality single crystals of {\alpha}-RuCl3 with ABAB ordered layers, the ternary compounds demonstrate a significant stacking disorder along the c-axis direction evidenced by X-ray diffraction and high resolution scanning transmission electron microscopy (HR-STEM). Raman spectra of substituted samples are in line with a symmetry conservation of the parent lattice upon chromium doping. At the same time, magnetic susceptibility data indicate that the Kitaev physics of {\alpha}-RuCl3 is increasingly repressed by the dominant spin-only driven magnetism of Cr3+ in Ru1-xCrxCl3.

The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $\rho_\mathrm{xy}^\mathrm{T} = 8$ n$\Omega$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations., Comment: 8 pages, 3 figures

Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 {\deg}C) and MnBi$_{2}$Te$_{4}$ (600 {\deg}C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.

Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the composition and disorder are almost unchanged. We show that -dHc2/dT scales linearly with Tc, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s+- superconductivity., Comment: 13 pages, 8 figures. Accepted in New J. Phys

The net entropy change corresponding to the charge carriers in a Ni-doped FeRh bulk polycrystal was experimentally evaluated in a single sample using low temperature heat capacity experiments with applied magnetic field, and using Seebeck effect and Hall coefficient measurements at high temperatures across the first order transition. From the heat capacity data a value for the electronic entropy change \(\Delta S_{el}\approx8.9\) J\ kg\(^{-1}\)K\(^{-1}\) was extracted, whereas a value of up to 4 J\ kg\(^{-1}\)K\(^{-1}\) was obtained form the Seebeck coefficient. Additionally, the analysis of the Seebeck coefficient allows tracing the evolution of the electronic entropy change with applied magnetic field. An increase of the electronic entropy with increasing applied magnetic field is evidenced, as high as 10 percent at 6 T.

The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$\mu$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.

The curvature of a magnetic membrane was presented as a means of inducing nonreciprocities in the spin-wave (SW) dispersion relation (see [Ot\'alora et al. Phys. Rev. Lett., 2016 117, 227203] and [Ot\'alora et al. Phys. Rev. B., 2017 95, 184415]), thereby expanding the toolbox for controlling SWs. In this paper, we further complement this toolbox by analytically showing that the membrane curvature is also manifested in the absorption of SWs, leading to a difference in the frequency linewidth (or lifetime) of counterpropagating magnons. Herein, we studied the nanotubular case, predicting changes of approximately greater than 10% and up to 20% in the frequency linewidth of counterpropagating SWs for a wide range of nanotube radii ranging from 30 nm to 260 nm and with a thickness of 10 nm. These percentages are comparable to those that can be extracted from experiments on heavy metal/magnetic metal sandwiches, wherein linewidth asymmetry results from an interfacial Dzyaloshinskii-Moriya interaction (DMI). We also show that the interplay between the frequency linewidth and group velocity leads to asymmetries in the SW decay length, presenting changes between 10\% and 22\% for counterpropagating SWs in the frequency range of 2 - 10 GHz. For the case of the SW dispersion relation, the predicted effects are identified as the classical dipole-dipole interaction, and the analytical expression of the frequency linewidth has the same mathematical form as in thin films with the DMI. Furthermore, we present limiting cases of a tubular geometry with negligible curvature such that our analytical model converges to the case of a planar thin film known from the literature. Our findings represent a step forward toward the realization of three-dimensional curvilinear magnonic devices., Comment: 11 pages, 5 figures

We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. We estimate the spin transport parameters by comparing the magnitude of the magnetoresistance in samples with different Pt thicknesses. We compare the spin Hall angle and the spin diffusion length of the ALD Pt layers to the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5nm agrees well with platinum thin films reported in the literature, whereas the spin Hall magnetoresistance $\Delta \rho / \rho = 2.2\times 10^{-5}$ is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future., Comment: 11 pages, 3 figures