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This paper reports on the results obtained during the development of the technological process of growth of sapphire crystals for optoelectronics through horizontal directional crystallization in a gaseous argon medium at a pressure of 800 mmHg. The sapphire crystals intended for the use in optoelectronics have been grown from purified molten alumina according to the authors’ technology. It has been demonstrated that, under conditions of a high temperature gradient across the crystallization front and at a low content of reducing components (H2, CO) in the growth medium, it is possible to grow sapphire crystals satisfying the requirements of optoelectronics. [ABSTRACT FROM AUTHOR]

This paper reports on the results of investigations into the transformation of the corundum structure upon reducing annealing at high temperatures in the range from 1700 to 2050°C. It is established that the reduction results in the transformation of corundum into new phases with a lower oxygen content, including the phase with a spinel structure. These structures are assumed to be stabilized by anion vacancies. A model of the crystal structure of the spinel phase is proposed. This model provides an adequate description of the compound obtained in the experiment. [ABSTRACT FROM AUTHOR]