1. Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires.
- Author
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Jansson, M., Nosenko, V. V., Rudko, G. Yu, Ishikawa, F., Chen, W. M., and Buyanova, I. A.
- Subjects
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LATTICE dynamics , *NANOWIRES , *SEMICONDUCTOR nanowires , *AUDITING standards , *GALLIUM arsenide , *RAMAN scattering , *SCANNING electron microscopy - Abstract
GaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires grown by molecular-beam epitaxy. By employing photoluminescence (PL), PL excitation, and Raman scattering spectroscopies complemented by scanning electron microscopy, we show that increasing Bi-beam equivalent pressure (BEP) during the growth does not necessarily result in a higher alloy composition but largely affects the carrier localization in GaAsBi. Specifically, it is found that under high BEP, bismuth tends either to be expelled from a nanowire shell towards its surface or to form larger clusters within the GaAsBi shell. Due to these two processes the bandgap of the Bi-containing shell remains practically independent of the Bi BEP, while the emission spectra of the NWs experience a significant red shift under increased Bi supply as a result of the localization effect. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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