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428 results on '"Noto, H"'

11. In-plane thermal conductivity of large single crystals of Sm-substituted (Y$_{1-x}$Sm$_{x}$)Ba$_{2}$Cu$_{3}$O$_{7-\delta}$

Author

Matsukawa, M., Noto, H., Furusawa, H., and Yao, X.

Subjects
Condensed Matter - Superconductivity, Condensed Matter - Materials Science
Abstract

We have investigated the in-plane thermal conductivity $\kappa_{ab}(T,H)$ of large single crystals of optimally oxygen-doped (Y$_{1-x}$,Sm$_{x}$)Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ ($x$=0, 0.1, 0.2 and 1.0) and YBa$_{2}$(Cu$_{1-y}$Zn$_{y}$)$_{3}$O$_{7-\delta}$($y$=0.0071) as functions of temperature and magnetic field (along the c axis). For comparison, the temperature dependence of $\kappa_{ab}$ for as-grown crystals with the corresponding compositions are presented. The nonlinear field dependence of $\kappa_{ab}$ for all crystals was observed at relatively low fields near a half of $T_{c}$. We make fits of the $\kappa(H)$ data to an electron contribution model, providing both the mean free path of quasiparticles $\ell_{0}$ and the electronic thermal conductivity $\kappa_{e}$, in the absence of field. The local lattice distortion due to the Sm substitution for Y suppresses both the phonon and electron contributions. On the other hand, the light Zn doping into the CuO $_{2}$ planes affects solely the electron component below $T_{c}$, resulting in a substantial decrease in $\ell_{0}$ ., Comment: 7 pages,4 figures,1 table

Published
2006
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12. Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal

Author

Matsukawa, M., Akasaka, K., Noto, H., and Suryanarayanan, R.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

We have investigated the resistive relaxation of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of the field-induced insulator to metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponential function accompanied by a slow relaxation similar to that obtained in magnetization and magnetostriction data. We demonstrate that the remanent relaxation in magnetotransport has a close relationship with magnetic relaxation that can be understood in the framework of an effective medium approximation by assuming that the first order parameter is proportional to the second order one., Comment: 6 pages,5 figures

Published
2005
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14. Methylsiloxanes from vehicle emissions detected in aerosol particles

Author

Yao, P., Holzinger, R., Materić, Dusan, Oyama, B.S., de Fátima Andrade, M., Paul, D., Ni, H., Noto, H., Huang, R.-J., Dusek, U., Yao, P., Holzinger, R., Materić, Dusan, Oyama, B.S., de Fátima Andrade, M., Paul, D., Ni, H., Noto, H., Huang, R.-J., and Dusek, U.

Abstract

Methylsiloxanes have gained growing attention as emerging pollutants due to their toxicity to organisms. As man-made chemicals with no natural source, most research to date has focused on volatile methylsiloxanes from personal care or household products and industrial processes. Here, we show that methylsiloxanes can be found in primary aerosol particles emitted by vehicles based on aerosol samples collected in two tunnels in São Paulo, Brazil. The aerosol samples were analyzed with thermal desorption-proton transfer reaction-mass spectrometry (TD-PTR-MS), and methylsiloxanes were identified and quantified in the mass spectra based on the natural abundance of silicon isotopes. Various methylsiloxanes and derivatives were found in aerosol particles from both tunnels. The concentrations of methylsiloxanes and derivatives ranged 37.7–377 ng m–3, and the relative fractions in organic aerosols were 0.78–1.9%. The concentrations of methylsiloxanes exhibited a significant correlation with both unburned lubricating oils and organic aerosol mass. The emission factors of methylsiloxanes averaged 1.16 ± 0.59 mg kg–1 of burned fuel for light-duty vehicles and 1.53 ± 0.37 mg kg–1 for heavy-duty vehicles. Global annual emissions of methylsiloxanes in vehicle-emitted aerosols were estimated to range from 0.0035 to 0.0060 Tg, underscoring the significant yet largely unknown potential for health and climate impacts.

Published
2023

17. Microstructure and mechanical properties of mechanically alloyed ODS copper alloy for fusion material application

Author

Aghamiri, S.M.S., Oono, N., Ukai, S., Kasada, R., Noto, H., Hishinuma, Y., and Muroga, T.

Subjects
ODS copper, Mechanical properties, Mechanical alloying, Microstructure
Abstract

Advanced oxide dispersion strengthened copper alloys are promising structural materials for application in divertor system of future fusion reactors due to high irradiation resistance, high thermal conductivity, and good mechanical properties. In this study, a new ODS copper including 0.42wt%Y₂O₃ nanosized oxide particles was developed successfully by mechanical alloying method using addition of 1 wt% Stearic acid in Ar atmosphere. Mechanical alloying resulted in decrease of crystallite size to 28 nm in concurrent with increment of dislocation density and hardness to the saturated level of 1.7 × 10¹⁵m⁻² and 226HV₀.₁ after 48 h milling, respectively. Consolidated ODS copper by SPS and then hot roll-annealing at 900°C/60 min showed an average grain size of 1.1 µm with a near random texture. Furthermore, TEM observations demonstrated fine semicoherent Y₂O₃ oxide particles distributed with a misfit parameter (δ) of 0.17 in copper matrix with an average size of 10.8 nm and interparticle spacing of 152 nm. Finally, tensile test evaluation determined comparable mechanical properties of the annealed ODS copper (Cu-0.42wt%Y₂O₃) with Glidcop-Al25 including a yield strength of 272 MPa and total elongation of 12%, by two mechanisms of grain boundary strengthening and oxide particle strengthening.

Published
2018

24. Brass-texture induced grain structure evolution in room temperature rolled ODS copper

Author

Aghamiri, S. M. S., Oono, N., Ukai, S., Kasada, R., Noto, H., Hishinuma, Y., Muroga, T., Aghamiri, S. M. S., Oono, N., Ukai, S., Kasada, R., Noto, H., Hishinuma, Y., and Muroga, T.

Abstract

Currently, advanced ODS copper alloy is under study as a potential fusion material providing good mechanical properties. In this work, in order to develop a high performance ODS copper containing 0.5 wt% Y2O3 oxide particles, the effect of room temperature rolling and subsequent annealing on the grain structure evolution, texture development and tensile properties are studied using EBSD, TEM and tensile tests. Microstructure evolution studies show the grain structure coarsens by enhancing the Brass texture during increase of rolling reduction and a unique single crystal-like brass-texture deformed structure is achieved after 80% rolling reduction. We found the deformation mechanism of partial slip by a/2 211 dislocations facilitated by the pinning of a/2 101 perfect dislocations through fine oxide particles is responsible for formation of Brass texture during room temperature rolling. Furthermore, the recrystallization of ODS copper retards to high temperature of similar to 700 degrees C and shows a fine-grained microstructure with different orientations of Goss, Brass, S and Copper. Evaluation of microstructure-mechanical properties of the recrystallized samples expresses that the bimodal grain size distribution at 800 degrees C for 30 min offers a good tensile strength-ductility (UTS: 491 MPa, el(t): 19%) at ambient temperature.

Published
2019

25. Recrystallization of cold rolled oxide dispersion strengthened copper during room temperature annealing

Author

Aghamiri, S. M. S., 1000000421529, Ukai, S., Oono, N., Kasada, R., Noto, H., Hishinuma, Y., Muroga, T., Aghamiri, S. M. S., 1000000421529, Ukai, S., Oono, N., Kasada, R., Noto, H., Hishinuma, Y., and Muroga, T.

Abstract

Static discontinuous recrystallization was studied during room temperature annealing of a newly designed 80% room temperature rolled oxide dispersion strengthened copper. At early stages of annealing, fine new oriented nanosized/submicron grains were recrystallized in the unique matrix of single brass-oriented deformed grain. Upon longer annealing time up to 14 months, the size, area fraction and number density of the recrystallized grains increased significantly along with changing the crystallographic textures. The analysis of misorientation angle distribution of boundaries indicated transformation of low angle boundaries to high angle boundaries results in nucleation of recrystallized grains by significant contribution of static recovery. Furthermore, the constant level of mechanical hardness after recrystallization was interpreted by the balance between grain size hardening, oxide particle hardening and strain hardening. (C) 2019 Elsevier B.V. All rights reserved.

Published
2019

28. Nd3+-activated CaF2 ceramic lasers

Author

Chen, H., primary, Ikesue, A., additional, Noto, H., additional, Uehara, H., additional, Hishinuma, Y., additional, Muroga, T., additional, and Yasuhara, R., additional

Published
2019
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29. Improvement of thermal conductivity by adding tungsten and/or copper wire in F82H

Author

Heo, Jeongwoo, Hashimoto, N., Oka, H., and Noto, H.

Abstract

ABSTRACTThe F82H, which is one of reduced activation ferritic/martensitic steels, is a strong candidate structure material for fusion reactor because of its satisfactory mechanical property and high swelling resistance in the operating temperature range. One disadvantage of F82H would be its low thermal conductivity as a structural material for divertor. In this study, we have fabricated several F82H-based composite materials by the spark plasma sintering to improve its thermal conductivity by adding tungsten and/or copper wires. F82H-20 vol.% W and F82H-10 vol.% W-10 vol.% Cu composites included reaction layers at the interface between tungsten wire and F82H matrix, resulting in the decrease in ductility and tensile strength because of the formation of tungsten carbide. On the other hand, F82H-20 vol.% Cu composite, sintered for 120 min at 1000°C, included no reaction layers and showed the highest thermal conductivity with a high relative density. Furthermore, it showed a great tensile property, which is comparable to that of the original F82H.

Published
2022
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31. Effect of calcium channel blockers on incidence of diabetes: a meta-analysis

Author

Noto H, Goto A, Tsujimoto T, and Noda M

Subjects
RC581-951, Specialties of internal medicine
Abstract

Hiroshi Noto,1,2 Atsushi Goto,2 Tetsuro Tsujimoto,1 Mitsuhiko Noda1,2 1Department of Diabetes and Metabolic Medicine, Center Hospital, National Center for Global Health and Medicine, Tokyo, Japan; 2Department of Diabetes Research, Diabetes Research Center, Research Institute, National Center for Global Health and Medicine, Tokyo, Japan Aims: Insulin resistance and the progressive loss of ß-cell function are components of the fundamental pathophysiology of type II diabetes. A recent experimental study suggested that calcium channel blockers (CCBs) might inhibit ß-cell apoptosis, enhance ß-cell function, and prevent diabetes. The present meta-analysis examined the clinical effect of CCBs on the incidence of diabetes. Methods: MEDLINE, EMBASE, ISI Web of Science, the Cochrane Library, and ClinicalTrials.gov were each searched for relevant articles published up to March 11, 2013. Randomized controlled trials (RCTs) with a follow-up period of at least 1-year were included. Identified articles were systematically reviewed, and those with pertinent data were selected for inclusion in a meta-analysis. Results: We included ten RCTs in a meta-analysis. Of the 108,118 people with hypertension and no pre-existing diabetes, 7,073 (6.5%) cases of type II diabetes were reported. CCBs were associated with a higher incidence of diabetes than angiotensin-converting enzyme inhibitors (ACEIs) or angiotensin-receptor blockers (ARBs; pooled risk ratios [95% confidence intervals]: 1.23 [1.01–1.51] and 1.27 [1.14–1.42], respectively) and a lower incidence compared with ß blockers or diuretics (0.83 [0.73–0.94] and 0.82 [0.69–0.98], respectively). The overall risk of diabetes among subjects taking CCBs was not significant (0.99 [0.85–1.15]). Conclusion: The use of CCBs was not significantly associated with incident diabetes compared to other antihypertensive agents: the association with diabetes was lowest for ACEIs and ARBs, followed by CCBs, ß blockers, and diuretics. Although CCBs can be safely used in hypertensive patients, it would be premature to advocate CCBs for the prevention or treatment of diabetes. Keywords: diabetes, calcium channel blockers, hypertension, meta-analysis

Published
2013

32. Extension of the operational regime of the LHD towards a deuterium experiment

Author

Takeiri, Y., primary, Morisaki, T., additional, Osakabe, M., additional, Yokoyama, M., additional, Sakakibara, S., additional, Takahashi, H., additional, Nakamura, Y., additional, Oishi, T., additional, Motojima, G., additional, Murakami, S., additional, Ito, K., additional, Ejiri, A., additional, Imagawa, S., additional, Inagaki, S., additional, Isobe, M., additional, Kubo, S., additional, Masamune, S., additional, Mito, T., additional, Murakami, I., additional, Nagaoka, K., additional, Nagasaki, K., additional, Nishimura, K., additional, Sakamoto, M., additional, Sakamoto, R., additional, Shimozuma, T., additional, Shinohara, K., additional, Sugama, H., additional, Watanabe, K.Y., additional, Ahn, J.W., additional, Akata, N., additional, Akiyama, T., additional, Ashikawa, N., additional, Baldzuhn, J., additional, Bando, T., additional, Bernard, E., additional, Castejón, F., additional, Chikaraishi, H., additional, Emoto, M., additional, Evans, T., additional, Ezumi, N., additional, Fujii, K., additional, Funaba, H., additional, Goto, M., additional, Goto, T., additional, Gradic, D., additional, Gunsu, Y., additional, Hamaguchi, S., additional, Hasegawa, H., additional, Hayashi, Y., additional, Hidalgo, C., additional, Higashiguchi, T., additional, Hirooka, Y., additional, Hishinuma, Y., additional, Horiuchi, R., additional, Ichiguchi, K., additional, Ida, K., additional, Ido, T., additional, Igami, H., additional, Ikeda, K., additional, Ishiguro, S., additional, Ishizaki, R., additional, Ishizawa, A., additional, Ito, A., additional, Ito, Y., additional, Iwamoto, A., additional, Kamio, S., additional, Kamiya, K., additional, Kaneko, O., additional, Kanno, R., additional, Kasahara, H., additional, Kato, D., additional, Kato, T., additional, Kawahata, K., additional, Kawamura, G., additional, Kisaki, M., additional, Kitajima, S., additional, Ko, W.H., additional, Kobayashi, M., additional, Kobayashi, S., additional, Kobayashi, T., additional, Koga, K., additional, Kohyama, A., additional, Kumazawa, R., additional, Lee, J.H., additional, López-Bruna, D., additional, Makino, R., additional, Masuzaki, S., additional, Matsumoto, Y., additional, Matsuura, H., additional, Mitarai, O., additional, Miura, H., additional, Miyazawa, J., additional, Mizuguchi, N., additional, Moon, C., additional, Morita, S., additional, Moritaka, T., additional, Mukai, K., additional, Muroga, T., additional, Muto, S., additional, Mutoh, T., additional, Nagasaka, T., additional, Nagayama, Y., additional, Nakajima, N., additional, Nakanishi, H., additional, Nakano, H., additional, Nakata, M., additional, Narushima, Y., additional, Nishijima, D., additional, Nishimura, A., additional, Nishimura, S., additional, Nishitani, T., additional, Nishiura, M., additional, Nobuta, Y., additional, Noto, H., additional, Nunami, M., additional, Obana, T., additional, Ogawa, K., additional, Ohdachi, S., additional, Ohno, M., additional, Ohno, N., additional, Ohtani, H., additional, Okamoto, M., additional, Oya, Y., additional, Ozaki, T., additional, Peterson, B.J., additional, Preynas, M., additional, Sagara, S., additional, Saito, K., additional, Sakaue, H., additional, Sanpei, A., additional, Satake, S., additional, Sato, M., additional, Saze, T., additional, Schmitz, O., additional, Seki, R., additional, Seki, T., additional, Sharov, I., additional, Shimizu, A., additional, Shiratani, M., additional, Shoji, M., additional, Skinner, C., additional, Soga, R., additional, Stange, T., additional, Suzuki, C., additional, Suzuki, Y., additional, Takada, S., additional, Takahata, K., additional, Takayama, A., additional, Takayama, S., additional, Takemura, Y., additional, Takeuchi, Y., additional, Tamura, H., additional, Tamura, N., additional, Tanaka, H., additional, Tanaka, K., additional, Tanaka, M., additional, Tanaka, T., additional, Tanaka, Y., additional, Toda, S., additional, Todo, Y., additional, Toi, K., additional, Toida, M., additional, Tokitani, M., additional, Tokuzawa, T., additional, Tsuchiya, H., additional, Tsujimura, T., additional, Tsumori, K., additional, Usami, S., additional, Velasco, J.L., additional, Wang, H., additional, Watanabe, T.-H., additional, Watanabe, T., additional, Yagi, J., additional, Yajima, M., additional, Yamada, H., additional, Yamada, I., additional, Yamagishi, O., additional, Yamaguchi, N., additional, Yamamoto, Y., additional, Yanagi, N., additional, Yasuhara, R., additional, Yatsuka, E., additional, Yoshida, N., additional, Yoshinuma, M., additional, Yoshimura, S., additional, and Yoshimura, Y., additional

Published
2017
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36. Proceedings of the international session of the 26th annual meeting October 18–20, 1984—Chiba, Japan

Author

Kato, Y., Miyamori, H., Unoura, M., Ohmizo, N., Tanaka, N., Kobayashi, K., Hattori, N., Arakawa, Y., Amaki, S., Shikata, T., Liu, Bang-Hyun, Kanai, K., Morioka, S., Nishida, M., Noto, H., Takahashi, K., Matsushita, K., Beasley, R. Palmer, Hwang, Lu-Yu, Yano, M., Shima, M., Tsunoda, E., Koga, M., Minamino, T., Tsuji, T., Kagawa, K., Okuno, T., Takino, T., Kurihara, Takeshi, Obata, Hiroshi, Beasley, R. Palmer, Okita, K., Konishi, T., Kado, Y., Yokosuka, O., Omata, M., Imazeki, F., Ryuu, M., Okuda, K., Mitamura, Keiji, Chen, D. S., Sung, J. L., Lai, M. Y., Sheu, J. C., Hsu, H. C., Nakamura, T., Morizane, T., Tsuchiya, M., Kobayashi, K., Unoura, M., Okawa, K., Kobayashi, K., Kitano, A., Kuwajima, S., Hashimura, H., Matsumoto, T., Hiki, M., Yamamoto, S., Kinoshita, Y., Nagura, H., Shioda, Y., Tsutsumi, Y., Hasegawa, H., Watanabe, K., Kanoh, T., Nishida, O., Uchino, H., Miyake, T., Hishitani, Y., Bhargava, D. K., Shriniwas, B. N. Tandon, Kapur, B. M. L., Chawla, T. C., Kiran, Usha, Gupta, J. P., Jain, A. K., Agrawal, B. K., Gupta, Saroj, Chiba, M., Sasaki, M., Konn, M., Yamanaka, Y., Morita, T., Hashizume, T., Nara, K., Odagiri, H., Fujii, M., Ono, K., Nio, Y., Tsuchitani, T., Inamoto, T., Kodama, H., Tobe, T., Shi, Z. R., Kim, Y. S., Yamaoka, H., Nishiyama, K., Tajima, S., Fukushima, T., Tsuchiya, S., Kuroe, K., Kimura, A., Suwa, Y., Furukawa, H., Miyake, T., Watanabe, M., Yoshida, T., Aiso, S., Asakura, H., Tsuchiya, M., Miura, M., Hiwatashi, N., Fujiyama, Y., Kobayashi, K., Bamba, T., Hosoda, S., Benno, Y., Wakashin, Y., Wakashin, M., Mori, T., Ueda, S., Yoshida, H., Mori, Y., Okuda, K., You, Li, Wei-Fa, Ye, Yang, Guang-Xao, Ye, Wei-Fa, Nelwan, R. H. H., Gandhi, B. M., Gupta, H., Irshad, M., Chawla, T. C., Tandon, B. N., Cho, Mong, Liu, Bang-Hyun, Wu, Xie-ning, Tandon, Rakesh K., Srivastava, A. K., Kapur, B. M. L., Misra, R. K., Jiang, Shi-hu, Lin, Yan-zun, Liu, Bang-Hyun, Abdurachman, S. A., Hadi, Sujono, Bhargava, D. K., Agrawal, B. K., Bhat, K. R., Baoen, Wang, Madanagopalan, N., Solomon, V., Jayanthi, V., Raghuram, K., Kandasamy, I., Annapoorani, S., Gajarai, A., Panchanadam, M., Joshi, Y. K., Gandhi, B. M., Tandon, B. N., Hassan, A., Guntur, H., Soemarto, R., Rahardja, S. H., Soemarto, W., Baoen, Wang, Park, Keun-Soo, Liu, Bang-Hyun, Yao, G. B., Zhang, L. M., Wu, M. F., Tong, S. T., Tian, Y. F., Iwai, N., Kaneda, H., Tsuto, T., Yanagihara, J., Takahashi, T., Jinkun, Zhang, Jinkun, Zhang, Durrani, Hamid A., Gupta, J. P., Jain, A. K., Govil, A. K., Tripathi, V. N. P., Baoen, Wang, Shi, Z. R., Yin, D. Y., Wen, F. Q., Zhang, Jinkun, Panchanadam, M., Balasubramania, V. C., Are, P. S., Thyagarajan, S. P., Mahadevan, S., Dravidamani, S., Nigam, Pranesh, Agrawal, A. K., Kapoor, K. K., Lesmana, L., Sidharta, H., Marwoto, W., Akbar, N., Sulaiman, A., Sjaifoellah Noer, H. M., Gupta, J. P., Tantry, B. V., Jain, A. K., Sheu, J. C., Chen, D. S., Sung, J. L., Chuang, C. N., Yang, P. M., Lin, J. T., Hsu, H. C., Sheu, J. C., Lin, Y. H., Chen, D. S., Lee, C. S., Beasley, R. P., Hwang, L. Y., Nigam, Pranesh, Kapoor, K. K., and Gupta, A. K.

Published
1985
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37. In-plane thermal conductivity of large single crystals of Sm-substituted (Y$_{1-x}$Sm$_{x}$)Ba$_{2}$Cu$_{3}$O$_{7-��}$

Author

Matsukawa, M., Noto, H., Furusawa, H., and Yao, X.

Subjects
Superconductivity (cond-mat.supr-con), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences
Abstract

We have investigated the in-plane thermal conductivity $��_{ab}(T,H)$ of large single crystals of optimally oxygen-doped (Y$_{1-x}$,Sm$_{x}$)Ba$_{2}$Cu$_{3}$O$_{7-��}$ ($x$=0, 0.1, 0.2 and 1.0) and YBa$_{2}$(Cu$_{1-y}$Zn$_{y}$)$_{3}$O$_{7-��}$($y$=0.0071) as functions of temperature and magnetic field (along the c axis). For comparison, the temperature dependence of $��_{ab}$ for as-grown crystals with the corresponding compositions are presented. The nonlinear field dependence of $��_{ab}$ for all crystals was observed at relatively low fields near a half of $T_{c}$. We make fits of the $��(H)$ data to an electron contribution model, providing both the mean free path of quasiparticles $\ell_{0}$ and the electronic thermal conductivity $��_{e}$, in the absence of field. The local lattice distortion due to the Sm substitution for Y suppresses both the phonon and electron contributions. On the other hand, the light Zn doping into the CuO $_{2}$ planes affects solely the electron component below $T_{c}$, resulting in a substantial decrease in $\ell_{0}$ ., 7 pages,4 figures,1 table

Published
2006
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42. Resistive relaxation in the field-induced insulator-metal transition of a (La0.4Pr0.6)1.2Sr1.8Mn2O7 bilayer manganite single crystal

Author

Matsukawa, M, Akasaka, K, Noto, H, Suryanarayanan, R, Nimori, S, Apostu, M, Revcolevschi, A, Kobayashi, N, Matsukawa, M, Akasaka, K, Noto, H, Suryanarayanan, R, Nimori, S, Apostu, M, Revcolevschi, A, and Kobayashi, N

Abstract

We have investigated the resistive relaxation of a (La0.4Pr0.6)1.2Sr1.8Mn2O7 single crystal, in order to examine the slow dynamics of the field-induced insulator-to-metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponential function accompanied by a slow relaxation similar to that observed in magnetization and magnetostriction data. We demonstrate that the remanent relaxation in magnetotransport has a close relationship with magnetic relaxation that can be understood in the framework of an effective-medium approximation by assuming that the first-order parameter is proportional to the second-order one.

Published
2005

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