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A single concentrator solar cell model with a heat sink is established to simulate the thermal performance of the system by varying the number, height, and thickness of fins, the base thickness and thermal resistance of the thermal conductive adhesive. Influence disciplines of those parameters on temperatures of the solar cell and heat sink are obtained. With optimized number, height and thickness of fins, and the thickness values of base of 8, 1.4 cm, 1.5 mm, and 2 mm, the lowest temperatures of the solar cell and heat sink are 41.7 °C and 36.3 °C respectively. A concentrator solar cell prototype with a heat sink fabricated based on the simulation optimized structure is built. Outdoor temperatures of the prototype are tested. Temperatures of the solar cell and heat sink are stabilized with time continuing at about 37 °C–38 °C and 35 °C–36 °C respectively, slightly lower than the simulation results because of effects of the wind and cloud. Thus the simulation model enables to predict the thermal performance of the system, and the simulation results can be a reference for designing heat sinks in the field of single concentrator solar cells.

A metal plate cooling model for 400× single concentrator solar cells was established. The effects of the thickness and the radius of the metal plate, and the air environment on the temperature of the solar cells were analyzed in detail. It is shown that the temperature of the solar cells decreased sharply at the beginning, with the increase in the thickness of the metal plate, and then changed more smoothly. When the radius of the metal plate was 4 cm and the thickness increased to 2 mm or thicker, the temperature of the solar cell basically stabilized at about 53 ◦ C. Increasing the radius of the metal plate and the convective transfer coefficient made the temperature of the solar cell decrease remarkably. The effects of Al and Cu as the metal plate material on cooling were analyzed contrastively, and demonstrated the superiority of Al material for the cooling system. Furthermore, considering cost reduction, space holding and the stress of the system, we optimized the structural design of the metal plate. The simulated results can be referred to the design of the structure for the metal plate. Finally, a method to devise the structure of the metal plate for single concentrator solar cells was given.

Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (C) 2001 American Institute of Physics.