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6. Electrical and optical properties of ZnO thin films grown on Si substrates.

Author

Yuldashev, Sh. U., Panin, G. N., Kang, T. W., Nusretov, R. A., and Khvan, I. V.

Subjects
ZINC oxide thin films, SURFACES (Technology), SEMICONDUCTORS, ELECTRIC conductivity, PYROLYSIS, CHEMICAL reactions
Abstract

Undoped and nitrogen doped ZnO films were deposited on Si substrates by ultrasonic spray pyrolysis at ambient atmosphere. The p type of conductivity for the nitrogen doped ZnO films has been observed. The concentration of free holes in ZnO films has been found to depend strongly on the resistivity of Si substrate. With decreasing of the substrate resistivity the concentration of free holes in ZnO films increases. The hole concentration of 1.1×1018 cm-3 and the hole mobility of 24 cm2 V-1 s-1 were observed in the ZnO films grown on the Si substrates with the resistivity of 0.001 Ω cm. [ABSTRACT FROM AUTHOR]

Published
2006
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