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Ferroelectricity in crystals is associated with the displacement of ions or rotations of polar units. Here we consider the dipole created by donor doping ($D^+$) and the corresponding bound polaron ($e^-$).A dipole of 6.15 Debye is predicted, from Berry phase analysis, in the Ruddlesden-Popper phase of ${\rm Sr_3Ti_2O_7}$. A characteristic double-well potential is formed, which persists for high doping densities. The effective Hubbard $U$ interaction can vary the defect state from metallic, a two-dimensional polaron, through to a zero-dimensional polaron. The ferroelectric-like behavior reported here is localized and distinct from conventional spontaneous lattice polarization.

Oxidation states are well-established in chemical science teaching and research. We data-mine more than 168,000 crystallographic reports to find an optimal allocation of oxidation states to each element. In doing so we uncover discrepancies between text-book chemistry and reported charge states observed in materials. We go on to show how the oxidation states we recommend can significantly facilitate materials discovery and heuristic design of novel inorganic compounds.

A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN, GaN, MgO, and 3C-SiC. Without any corrections, the absolute errors are around 1 eV with moderate size supercells in most cases. In contrast, when our correction method is adopted, the absolute errors are reduced and become less than 0.12 eV in all the cases. Our correction scheme is general and will have the potential for wide application as it is adaptive for evaluating various quantities at fixed geometry, as represented by those relevant to the generalized Koopmans' theorem.

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured ${\alpha}$-Ga2O3. Either under a Ga- or O-rich growth condition, the negatively-charged Ga vacancy and the positively-charged Ga interstitial on a site surrounded by six O atoms are dominant when the Fermi level approaches the conduction and valence band edges, respectively. These defects would compensate carrier electrons and holes, respectively. Ga-rich conditions relatively suppress the formation of the Ga vacancy and, therefore, are suited for extrinsic n-type doping of ${\alpha}$-Ga2O3., Comment: 14 pages, 4 figures

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition. We applied a hybrid functional that reproduces the experimental bandgap of SiC well and offers reliable defect properties. For point defects, we investigated single vacancies, antisites, and interstitials of Si and C on relevant sites. For carbon clusters, we systematically introduced two additional C atoms into the perfect 4H-SiC lattice with and without removing Si atoms and performed structural optimization to identify stable defect configurations. We found that neutral Si antisites are energetically favorable among Si-point defects in a wide range of the Fermi level position around the intrinsic regime, whereas negatively-charged Si vacancies and a positively-charged Si interstitial on a site surrounded by three Si and three C atoms become favorable under n- and p-type conditions, respectively. For C-point defects, neutral C antisites are favorable under intrinsic and n-type conditions, whereas positively-charged C vacancies become favorable under p-type conditions. We also found that a di-carbon antisite is more favorable than a C-split interstitial, which is the most stable form of single C interstitials., Comment: 19 pages, 7 figures

Zinc tin nitride (ZnSnN2) is attracting growing interest as a non-toxic and earth-abundant photoabsorber for thin-film photovoltaics. Carrier transport in ZnSnN2 and consequently cell performance are strongly affected by point defects with deep levels acting as carrier recombination centers. In this study, the point defects in ZnSnN2 are revisited by careful first-principles modeling based on recent experimental and theoretical findings. It is shown that ZnSnN2 does not have low-energy defects with deep levels, in contrast to previously reported results. Therefore, ZnSnN2 is more promising as a photoabsorber material than formerly considered., Comment: Main text and Supplemental Material

The tin sulfides represent a materials platform for earth-abundant semiconductor technologies. We present a first-principles study of the five known and proposed phases of SnS together with SnS2 and Sn2S3. Lattice-dynamics techniques are used to evaluate the dynamical stability and temperature-dependent thermodynamic free energy, and we also consider the effect of dispersion forces on the energetics. The recently identified {\pi}-cubic phase of SnS is found to be metastable with respect to the well-known orthorhombic Pnma/Cmcm equilibrium. The Cmcm phase is a low-lying saddle point between Pnma minima on the potential-energy surface, and is observed as an average structure at high temperatures. Bulk rocksalt and zincblende phases are found to be dynamically unstable, and we show that whereas rocksalt SnS can potentially be stabilised under a reduction of the lattice constant, the hypothetical zincblende phase proposed in several earlier studies is extremely unlikely to form. We also investigate the stability of Sn2S3 with respect to SnS and SnS2, and find that both dispersion forces and vibrational contributions to the free energy are required to explain its experimentally-observed resistance to decomposition., Comment: Article + ESI

Magnetic structures of metastable perovskites ScCrO3, InCrO3 and TlCrO3, stabilized under high-pressure and high-temperature conditions, have been studied by neutron powder diffraction. Similar to the other orthochromites LnCrO3 (Ln=lanthanide or Y), these materials crystallize into the orthorhombic structure with Pnma10 symmetry. The spin configuration of the metastable perovskites has been found to be C-type, contrasting with the G-type structure usually observed in LnCrO3. First-principles calculations demonstrate that the Ctype structure found in ScCrO3 and InCrO3 is attributed to a ferromagnetic (FM) nearest-neighbor interaction, while in TlCrO3, this type of magnetic ordering is stabilized by a strong next-nearest-neighbor antiferromagnetic (AFM) exchange. The spins in the C-type magnetic structure line up along the orthorhombic b-axis, yielding the Pnma magnetic symmetry. The dominant mechanism controlling this spin direction has been concluded to be the single ion anisotropy imposed by a uniaxial distortion of CrO6 octahedra., Comment: Accepted in Physical Review B

Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons., Comment: 28 pages, 9 figures

Systematic and automatic calculations of the electronic band structure are a crucial component of computationally-driven high-throughput materials screening. An algorithm, for any crystal, to derive a unique description of the crystal structure together with a recommended band path is indispensable for this task. The electronic band structure is typically sampled along a path within the first Brillouin zone including the surface in reciprocal space. Some points in reciprocal space have higher site symmetries and/or have higher constraints than other points regarding the electronic band structure and therefore are likely to be more important than other points. This work categorizes points in reciprocal space according to their symmetry and provides recommended band paths that cover all special wavevector (k-vector) points and lines necessarily and sufficiently. Points in reciprocal space are labeled such that there is no conflict with the crystallographic convention. The k-vector coefficients of labeled points, which are located at Brillouin zone face and edge centers as well as vertices, are derived based on a primitive cell compatible with the crystallographic convention, including those with axial ratio-dependent coordinates. Furthermore, we provide an open-source implementation of the algorithms within our SeeK-path python code, to allow researchers to obtain k-vector coefficients and recommended band paths in an automated fashion. Finally, we created a free online service to compute and visualise Brillouin Zone, labeled k-points and suggested band paths for any crystal structure, that we made available at http://www.materialscloud.org/tools/seekpath/ .

With ab initio codes that employ three-dimensional periodic boundary conditions, the slab-and-vacuum model has proven invaluable for the derivation of energetic, atomistic, and electronic properties of materials. Within this approach, polar and nonpolar slabs require different levels of treatment, as any polar instability must be compensated on a case-by-case basis in the former. This article proposes an efficient algorithm based on isometries to identify whether a slab with the given surface orientation would be intrinsically polar, and if not, to obtain information on where to cleave the bulk crystal to obtain a stoichiometric nonpolar slab and whether reconstruction is necessary to generate a stoichiometric slab that is not polar.

Finite-size corrections for charged defect supercell calculations typically consist of image-charge and potential alignment corrections. A wide variety of schemes for both corrections have been proposed for decades. Regarding the image-charge correction, Freysoldt, Neugebauer, and Van de Walle (FNV) recently proposed a novel method that enables us to accurately estimate the correction energy a posteriori through alignment of the defect-induced potential to the model charge potential [Freysoldt et al., Phys. Rev. Lett. 102, 016402 (2009)]. This method, however, still has two issues in practice. Firstly, it uses planar-averaged potential for determining the potential offset, which cannot be readily applied to relaxed system. Secondly, the long-range Coulomb interaction is assumed to be screened by a macroscopic dielectric constant. This is valid only for cubic systems and can bring forth huge errors for defects in anisotropic materials. In this study, we use the atomic site electrostatic potential as a potential marker instead of the planar-averaged potential, and extend the FNV scheme by adopting the point charge model in an anisotropic medium for estimating long-range interactions. We also revisit the conventional potential alignment correction and show that it is fully included in the image-charge correction and therefore unnecessary. In addition, we show that the potential alignment corresponds to a part of first-order and full of third-order image-charge correction; thus the third-order image-charge contribution is absent after the potential alignment. Finally, a systematic assessment of the accuracy of the extended FNV correction scheme is performed for a wide range of material classes. The defect formation energies calculated using around 100-atom supercells are successfully corrected even after atomic relaxation within a few tenths of eV compared to those in the dilute limit.

Room temperature ferromagnetism of GaMnN thin films is awaked by a mild hydrogenation treatment of samples synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn-L2,3 near edge x-ray absorption fine structure (NEXAFS) technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from +3 to +2 by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the mid- gap Mn band mediate the magnetic coupling., Comment: 12 pages, 5 figures

Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of GaMnN films showing room temperature ferromagnetism and p-type conductivity has been reported. The estimated Curie temperature was 940K at 5.7% of Mn, which is highest among diluted magnetic semiconductors ever been reported. However, the electronic mechanism behind the ferromagnetic behaviour has still been controversial. Here we show experimental evidence using the ferromagnetic samples that Mn atoms are substitutionally dissolved into the GaN lattice and they exhibit mixed valences of +2 (majority) and +3 (minority). The p-type carrier density decreases significantly at very low temperatures. At the same time, magnetization dramatically decreases. The results imply that the ferromagnetic coupling between Mn atoms is mediated by holes in the mid-gap Mn band., Comment: 12 pages, 3 figures