165 results on '"Obloh, H."'
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2. Group III-nitride based blue emitters
3. InAs/AlSb/GaSb heterostructures
4. Controlled incorporation of mid-to-high Z transition metals in CVD diamond
5. Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
6. Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
7. Influence of heteroepitaxy on the width and frequency of the E2 (high)-phonon line in GaN studied by Raman spectroscopy
8. Dielectric function spectra of GaN, AIGaN, and GaN/AIGaN heterostructures
9. Resonant Raman scattering from buried A1xGa1-xN (x<0.17) layers
10. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
11. Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures
12. Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
13. Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
14. X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
15. Anharmonicity of the E 2(high) and A 1(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy
16. Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
17. Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
18. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
19. Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
20. Modulation of the electronic properties of GaN films by surface acoustic waves.
21. Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN
22. X-ray analysis of the texture of heteroepitaxial gallium nitride films
23. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
24. Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems
25. Energy Dissipation Processes in the Quantum Hall Regime
26. Fractional surface termination of diamond by electrochemical oxidation
27. The creation of a biomimetic interface between boron-doped diamond and immobilized proteins
28. Doping of single crystalline diamond with nickel
29. Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems
30. Group III-nitride based blue emitters
31. InAs/AlSb/GaSb heterostructures
32. Group III-Nitride heterostructures: From materials research to devices
33. Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
34. Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
35. Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
36. Resonant Raman scattering from buried Al(x)Ga(1-x)N (x < = 0.17) layers in (Al,Ga,In)N heterostructures
37. Aging behavior of AlGaA/GaN HFETs with advanced ohmic and Schottky contacts
38. Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
39. Technology and thermal stability of ALGAN/GAN HFETs
40. In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
41. Optically detected magnetic-resonance of shallow donor shallow acceptor and deep (2.8-3.2 ev) recombination from Mg-doped GaN
42. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs (LUCOLEDs)
43. Nature of 2.8 eV photoluminescence band in Mg doped GaN
44. Compositional and structural analysis of AlSb (As) tunneling barriers in InAs/AlSb (As) / GaSb resonant interband-tunneling structures
45. Matrix-addressable infrared filters for the protection of highly sensitive detectors
46. Doping of single crystalline diamond with nickel
47. Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
48. Nickel doping of nitrogen enriched CVD-diamond for the production of single photon emitters
49. Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures
50. Importance of Nonradiative Recombination Processes in Violet/UV InGaN Light Emitting Diodes
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