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Static and dynamic mechanical properties of the movable floating gate for a newly proposed high-speed and nonvolatile nanomechanical memory are investigated. The structural parameter dependence is found for the switching force and found that the switching frequency increases when the floating gate dimensions are downsized along with the scaling law.

Electron charging and discharging processes in floating gate metal-oxide-semiconductor memory based on nanocrystalline silicon (nc-Si) dots are investigated at room temperature using capacitance-voltage and conductance-voltage (G-V) measurements. Taking into account, the electron-charging energy between the silicon substrate and the floating dot (30 meV) into account, the quantum confinement energy was found to be as significant as the electron charging energy for nc-Si dots, with ~8nm in diameter, embedded in silicon oxide.

The lifetime of the emission of a single electron stored in a nanocrystalline Si dot is studied in order to understand the physical processes for memory applications. An analysis of lifetime as a function of applied potential and temperature show the dot to be an acceptor site with nearly Poisson time distributions.

Electrical measurement of single nanocrystalline silicon particles is reported.

Metalorganic chemical vapor deposition is used to prepare high-temperature superconducting YBCO films with high quality interfaces. The films are then studied for their surface morphology and superconductivity by means of atomic force microscopy. Results show that the films are free of precipitates and have very smooth surfaces, making them very suitable in the fabrication of field effect devices.