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Magnetic sensors are widely used in the field of mineral, navigational, automotive, medical, industrial, military, and consumer electronics. Many magnetic sensors have been developed that are generated by specific laws or phenomena: such as search-coil, fluxgate, Hall Effect, anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), magnetoelectric (ME), magnetodiode, magnetotransictor, fiber-optic, optical pump, superconducting quantum interference device (SQUID), etc. Each of these magnetic field sensors has their merits and application areas. For low power consumption (ME is the most important parameter. To enhance resonant gain in αME, I have developed a three phase laminate concept, which is based on increasing the effective mechanical factor Q while reducing the resonant frequency. A ME voltage coefficient of αME ~40V/cm.Oe has been achieved at resonance, which is about 2x higher than that of a conventional bending mode. Investigations of detection circuit optimization were also performed. Component selection strategies and a new charge topology were considered. Proper component values were required to optimize the charge detection scheme. It was also found, under some specific conditions to satisfy the circuit stability, that if the lowest required measurement frequency of the charge source was f1, then that it was not necessary to make the high corner frequency fp of the charge amplifier lower than f₁: as doing so would decrease the system's signal-to-noise ratio (SNR). A high pass, high order filter placed behind the charge amplifier was found to increase the charge sensitivity, as it narrows the intrinsic noise bandwidth and decreases the output noise contribution, while only slightly affecting the signal's output amplitude. Prototype ME unit were also constructed, and their noise level simulated by Pspice. Experimental results showed that prototypes ME unit can reach their detection limit. In addition, a new magneto-electric coupling mechanism was also found, which had a giant ME effect. Ph. D.

The high-voltage SiC power semiconductor devices have been developed in recent years. They cause an urgent in the need for the power semiconductor packaging to have not only low interconnect resistance, less noise, less parasitic oscillations, improved reliability, and better thermal management, but also High-Voltage (HV) blocking capability. The existing power semiconductor packaging technologies includes wire-bonding interconnect, press pack, flip-chip technology, metal posts interconnected parallel plates structure (MIPPS), dimple array interconnection (DAI), power overlay (POL) technology, and embedded power (EP) technology. None of them meets the requirements of low profile and high voltage rating. The objective of the work in this dissertation is to propose and design a high-voltage power semiconductor device packaging method with low electric field stress and low profile to meet the requirments of high-voltage blocking capability. The main contributions of the work presented in this dissertation are: 1. Understanding the electric field distribution in the package. The power semiconductor packaging is simulated by using Finite Element Analysis (FEA) software. The electric field distribution is known and the locations of high electric field concentration are identified. 2. Development of planar high-voltage power semiconductor device packaging method With the proposed structure in the dissertation, the electric field distribution of a planar device package is improved and the high electric field intensity is relieved. 3. Development of design guidelines for the propsed planar high-voltage device packaging method. The influence of the structure dimensions and the material properties is studied. An optimal design is identified. The design guideline is given. 4. Fabrication and experimental verification of the proposed high-voltage device packaging method A detailed fabrication procedure which follows the design guideline is presented. The fabricated modules are tested by using a high power curve tracer. Test results verify the proposed method. 5. Simplification of the structure model of the proposed device package The package structure model is simplified through the elimination of power semiconductor device internal structure model. The simplified model can be simulated by a non-power device simulator. The simulation results of the simplified model match the simulation results of the complete model very well. Ph. D.

There has been increased interest in exploring high frequency (mm-wave) spectrum (particularly the 30 and 60 GHz ranges), and utilizing silicon-based technology for reduced-cost monolithic millimeter integrated circuits (MMIC), for applications such as WLAN, inter-vehicle communication (IVC) automotive radar and local multipoint distribution system (LMDS). Although there has been a significant increase in silicon-based implementations recently, this area still has significant need for research and development. For example, one microwave/mm-wave front-end component that has seen little development in silicon is the power amplifier (PA). Two potential technologies exist for providing a solution for low-cost microwave/mm-wave power amplifiers: 1) Silicon-Germanium (SiGe) HBT and 2) Complementary metal-oxide semiconductor (CMOS). SiGe HBT has become a viable candidate for PA development since it exhibits higher gain and higher breakdown voltage limits compared to CMOS, while remaining compatible with BiCMOS technology. Also, SiGe is potentially lower in cost compared to other compound semiconductor technologies that are currently used in power amplifier design. Hence, this research focuses on design of millimeter-wave power amplifiers in SiGe HBT technology. The work presented in this thesis will focus on design of different power amplifiers for millimeter-wave operating frequencies. Amplifiers present the fundamental trade-off between linearity and efficiency. Applications at frequencies highlighted above tend to be point-to-point, and hence high linearity is required at the cost of lowered efficiency for these power amplifiers. The designed power amplifiers are fully differential topologies based on finite ground coplanar waveguide (FGC) transmission line technology, and have on-chip matching networks and bias circuits. The selection and design of FGC lines is supported through full-wave EM simulations. Tuned single stub matching networks are realized using FGC technology and utilized for input and output matching networks. Two 30-GHz range SiGe HBT PA designs were carried out in Atmel SiGe2RF and IBM BiCMOS 8HP IC technologies. The designs were characterized first by simulations. The performance of the Atmel PA design was characterized using microwave/mm-wave on wafer test measurement setup. The IBM 8HP design is awaiting fabrication. The measured results indicated high linearity, targeted output power range, and expected efficiency performance were achieved. This validates the selection of SiGe HBT as the technology of choice of high frequency point-to-point applications. The results show that it is possible to design power amplifiers that can effectively work at millimeter-wave frequencies at lower cost for applications such as mm-wave WLAN and IVC where linearity is important and required transmitted power is much lower than in cellular handset power amplifiers. Moreover, recommendations are made for future research steps to improve upon the presented designs. Master of Science

The volume reduction in power converters over the past several decades can chiefly be attributed to increases in switching frequency. It is to be expected that the trends towards miniaturization will maintain steady pressure to keep this pace of increasing switching frequencies of power converters. However certain fundamental limits in high frequency power conversion are being reached as frequencies are being pushed deeper into the megahertz range, inhibiting substantial further increases. The work reported in this dissertation is intended to systematically investigate the fundamental frequency limitations, identify some of the solutions for HF/VHF power conversion and to provide guidelines and tools to optimize the performance of power converters by maximizing frequency. A number of multi-megahertz power converters are examined to evaluate the present status and future trend of HF/VHF power conversion. An interesting trend between power level and frequency is observed. A general limitation about the power level and frequency, independent of design details, is derived from the physics of the semiconductor devices, which determines the upper bound of the power levels as frequency increases. A 250 MHz DC-DC power converter (derived from the Class E power amplifier) is analyzed and demonstrated with discrete components, which again verifies the trend between power level and frequency. The power losses in the semiconductor devices are discussed, and optimization criteria for minimizing the power losses of the devices, are discussed. By relating the power losses to the semiconductor materials' properties, a methodology for selecting proper materials is identified for high frequency and high efficiency power conversion. The frequency scaling effects of passive components, still dominating the volume of the modern power converter, is analyzed. A generic multi-disciplinary methodology is developed to analyze and maximize frequency and performance of passive components in terms of power density and efficiency. It is demonstrated how the optimum frequency can be identified, and how power conversion efficiency deteriorates beyond this optimum under a fixed maximum temperature. Power loss measurement is becoming more challenging as higher frequency and higher efficiency power conversion. To achieve an accurate power loss measurement in a high frequency, high efficiency power electronics system or component, limitations of electrical measurement are identified, and various calorimetric methods are surveyed. Calorimetric methods are more accurate due to the direct heat loss measurement. An advanced calorimetric system is proposed, analyzed, and tested, demonstrating about 5% error in total losses up to 25W. Ph. D.

The advent and proliferation of planar technologies for power converters are driven in part by the overall trends in analog and digital electronics. These trends coupled with the demands for increasingly higher power quality and tighter regulations raise various design challenges. Because inductors and transformers constitute a rather large part of the overall converter volume, size and performance improvement of these structures can subsequently enhance the capability of power converters to meet these application-driven demands. Increasing the switching frequency has been the traditional approach in reducing converter size and improving performance. However, the increase in switching frequency leads to increased power loss density in windings and core, with subsequent increase in device temperature, parasitics and electromagnetic radiation. An accurate set of reduced-order modeling methodologies is presented in this work in order to predict the high-frequency behavior of inductors and transformers. Analytical frequency-dependent expressions to predict losses in planar, foil windings and cores are given. The losses in the core and windings raise the temperature of the structure. In order to ensure temperature limitation of the structure is not exceeded, 1-D thermal modeling is undertaken. Based on the losses and temperature limitation, a methodology to optimize performance of magnetics is outlined. Both numerical and analytical means are employed in the extraction of transformer parasitics and cross-coupling. The results are compared against experimental measurements and are found to be in good accord. A simple near-field electromagnetic shield design is presented in order to mitigate the amount of radiation. Due to inadequacy of existing winding technology in forming suitable planar windings for PCB application, an alternate winding scheme is proposed which relies on depositing windings directly onto the core. Master of Science

The demand for high power density keeps driving the development of electromagnetic integration technologies in the field of power electronics. Based on planar homogeneous integrated structures, the mechanism of the electromagnetic integration of passives has been investigated with distributed-parameter models. High order modeling of integrated passives has been developed to investigate the electromagnetic performance. The design algorithm combining electromagnetic design and loss models has been developed to optimize and evaluate the spiral winding structure. High power density of 480 W/in3 has been obtained on the prototype. Due to the structural limitation, the currently applied planar spiral winding structure does not sufficiently utilize the space, and the structure is mechanically vulnerable. The improvement on structures is necessary for further application of integrated passives. The goal of this research is to investigate and evaluate alternative structures for high-power-density integrated passives. The research covers electromagnetic modeling, constructional study, design algorithm, loss modeling, thermal management and implementation technology The symmetric single layer structure and the stacked structure are proposed to overcome the disadvantages of the currently applied planar spiral winding structure. Because of the potential of high power density and low power loss, the stacked structure is selected for further research. The structural characteristics and the processing technologies are addressed. By taking an integrated LLCT module as the study case, the general design algorithm is developed to find out a set of feasible designs. The obtained design maps are used to evaluate the constraints from spatial, materials and processing technologies for the stacked structure. Based on the assumption of one-dimensional magnetic filed on the cross-section and linear current distribution along the longitudinal direction of the stacked structure, the electromagnetic field distribution is analyzed and the loss modeling is made. The experimental method is proposed to measure the loss and to verify the calculation. The power loss in the module leads to thermal issues, which limit the processed power of power electronics modules and thus limit the power density. To further improve the power handling ability of the module, the thermal management is made based on loss estimation. The heat extraction technology is developed to improve the heat removal ability and further improve the power density of integrated passives. The experimental results verify the power density improvement from the proposed stacked structure and the applied heat extraction technology. The power density of 1147 W/in3 (70 W/cm3) is achieved in the implemented LLCT module with the efficiency of 97.8% at output power of 1008W. Ph. D.

The work reported in this dissertation is intended to propose, analyze and demonstrate a technology for a high temperature integrated power electronics module, for high temperature (e.g those over 200oC) applications involving high density and low stress. To achieve this goal, this study has examined some existing packaging approaches, such as wire-bond interconnects and solder die-attach, flip-chip and pressure contacts. Based on the survey, a high temperature, multilayer 3-D packaging technology in the form of an Embedded Chip Module (ECM) is proposed to realize a lower stress distribution in a mechanically balanced structure with double-sided metallization layers and material CTE match in the structure. Thermal and thermo-mechanical analysis on an ECM is then used to demonstrate the benefits on the cooling system, and to study the material and structure for reducing the thermally induced mechanical stress. In the thermal analysis, the high temperature ECM shows the ability to handle a power density up to 284 W/in3 with a heat spreader only 2.1x2.1x0.2cm under forced convection. The study proves that the cooling system can be reduced by 76% by using a high temperature module in a room temperature environment. Furthermore, six proposed structures are compared using thermo-mechanical analysis, in order to obtain an optimal structure with a uniform low stress distribution. Since pure Mo cannot be electroplated, the low CTE metal Cr is proposed as the stress buffering material to be used in the flat metallization layers for a fully symmetrical ECM structure. Therefore, a chip area stress as low as 126MPa is attained. In the fabrication process, the high temperature material glass and a ceramic adhesive are applied as the insulating and sealing layers. Particularly, the Cr stress buffering layer is successfully electroplated in the high temperature ECM by means of the hard chrome plating process. The flat metallization layer is accomplished by using a combined structure with Cr and Cu metallization layers. The experimental evaluations, including the electrical and thermal characteristics of the ECM, have been part of in the study. The forward and reverse characteristics of the ECM are presented up to 250oC, indicating proper device functionality. The study on the reverse characteristics of the ECM indicates that the large leakage current at high temperature is not due to the package surrounding the chip, but chiefly caused by the Schottky junction and the chip passivation layer. Finally, steady-state and transient measurements are conducted in terms of the thermal measurements. The steady-state thermal measurement is used to demonstrate the cooling system reduction. To obtain the thermal parameters of the different layers in the high temperature ECM, the transient thermal measurement is applied to a single chip ECM based on the temperature cooling-down curve measurement. Ph. D.

Five chapters of this dissertation concentrate on the characterization and cancellation of high frequency parasitic parameters in EMI filters. One chapter addresses the interaction between the power interconnects and the parasitic parameters in EMI filters. The last chapter addresses the characterization, evaluation and design of noise separators. Both theoretical and experimental analyses are applied to each topic. This dissertation tries to explore several important issues related to EMI filters and noise separators. The author wishes to find some helpful approaches to benefit the understanding and design of EMI filters. The contributions of the dissertation can be summarized below: 1) Identification of mutual couplings and their effects on EMI filter performance 2) Extraction of mutual couplings using scattering parameters 3) Cancellation of mutual couplings to improve EMI filter performance 4) Cancellation of equivalent series inductance to improve capacitor performance 5) Analysis of mode transformations due to the imperfectly balanced parameters in EMI filters 6) Analysis of interaction between power interconnects and EMI filters on filter high-frequency performance 7) Modeling and design of high-performance noise separator for EMI diagnosis 8) Identification of the effects of parasitics in boost PFC inductor on DM noise Although all topics are supported by both theory and experiments, there may still be some mistakes in the dissertation. The author welcomes any advice and comments. Please send them via email to shuowang@ieee.org. Thanks Ph. D.

The challenge to put power electronics on the same cost reduction spiral as integrated signal electronics has yet to be met. In the ongoing work for achieving complete power electronic converter integration, it has proven to be essential to develop a technology for integration of electromagnetic power passives. This integration will enable the incorporation of resonant circuits, transformers, EMI filters and the like into the integrated power electronics modules. These integrated electromagnetic power passives have been realized in terms of distributed structures, utilizing magnetic layers, conductive layers and dielectric layers. Because of the compact structures and the special implementation techniques of these integrated modules, the high frequency parasitic resonance are normally significant and may have negative impact on the performance and EMI characteristics. However, the existing modeling technique can only predict the fundamental resonant frequency and showed neither the causes of the high frequency resonance nor how to calculate those accurately. In this dissertation, comprehensive research work towards higher order electromagnetic modeling of integrated passive components is presented. Firstly, an L-C cell is identified as the basic building block of integrated passives such as an integrated series resonator. As an essential mistake in the structure evolution process of the original resonant transmission line primitive, the well-known conventional transmission line equivalent circuit as well as the equations are not applicable for the unbalanced current in an integrated passive module. For this particular application, a generalized transmission structure theory that applies to both balanced and unbalanced current has to be developed. The impedances of a generalized transmission structure with various loads and interconnections have been studied. An open-circuited load and a short-circuited load lead to series resonance and parallel resonance, respectively. The equations are substantiated with experimental results. Some preliminary study indicates the advantages of this unbalanced current passives integration technique. Since the existing integrated passive components are no other than some combination of this generalized transmission line primitive, the theoretical analysis may be applied to the further modeling of all integrated passive components. As the extension of the generalized two-conductor transmission structure model developed for the two-conductor approach, the generalized multi-conductor transmission structure theory has been proposed. As multiple L-C cells are putting in parallel, magnetic and capacitive coupling between cells cannot be neglected. To determine the capacitance between two adjacent conductors on top of the same dielectric substrate, Schwarz-Christoffel transformation and its inverse transformation have been applied with the calculation results verified by measurement. Based on the original voltage and current equations written in matrix form, modal analysis has been conducted to solve the equations. All these provide the basis for any further modeling of an integrated passive structure. Based on the basic L-C cell structure, this dissertation proposes an alternative multi-cell approach to the integration of reactive components and establishes the principles for its design and operation. It achieves the 3-D integration and has a PCB-mount chip-like structure which may have the potential to be more manufacturable, modularizable and mechanically robust. Different functional equivalents can be obtained by different PCB interconnections. The experimental results confirm the functionality as integrated reactive components for applications such as high frequency resonators. To apply the multi-conductor generalized transmission structure model to practical integrated passives structures, three typical cases have been studied: spiral-winding structure integrated series resonator, multi-cell structure integrated series resonator and integrated RF EMI filter. All these structures can be treated as one or more multi-conductor transmission structures connected in certain patterns. Different connection patterns only determine the voltage and current boundary conditions with which the equations can be solved. After obtaining the voltages and currents at each point, the impedance or transfer gain of a structure can be obtained. The MATLAB calculation results correlate well with the measurement results. The calculation sensitivities with respect to variation of various parameters are also discussed and causes of resonance at different frequency range are identified. The proposed generalized transmission structure model based on matrix modal analysis is rather complex and takes a lot of computer time especially when the number of turns is large. Furthermore, the operating frequency of an integrated resonant module is normally around its 1st resonant frequency and up to the 2nd resonant frequency. Therefore, a more simplistic higher order lumped element model which covers the operating range up to the 2nd resonant frequency may be good enough for the general design purpose. A higher order equivalent circuit model for integrated series resonant modules as an example of integrated power passives is presented in this dissertation. Inter-winding capacitance is also considered compared to the conventional 1st order approximation model. This model has been verified by small-signal test results and can be easily implemented into the design algorithm as part of the high frequency design considerations. The wide band modeling and proposed new structure mentioned above provide a comprehensive basis for better design of integrated passive components. As a general frequency plane modeling approach, the work presented in this dissertation may be extended to other passive structures, such as multi-layer capacitors, planar magnetics, etc.. Ph. D.

The goal of this dissertation is to present a systematic approach to integrating the multidisciplinary design process in power electronics through the integration of existing CAD tools, multidisciplinary modeling and system optimization. Two major benefits are expected from the utilization of the proposed integrated design methodology. Firstly, it will significantly speed up the design process and will eliminate errors resulting from repeated manual data entry and information exchange. Secondly, the integrated design optimization will result in better utilization of materials and components. In order to understand the basic relationship between electrical and thermal phenomena, the self-heating effect of a simple copper conductor is modeled analytically. Based on these models, a guideline for copper trace design is proposed. The next step towards developing an integrated design methodology is to create threedimensional solid-body-based models that characterize the electrical, thermal and mechanical properties. The electrical model of an integrated power electronics module (IPEM), including parasitic parameters, is developed and experimentally verified with impedance measurements. Together with the thermal model, it lays the foundation for the integrated electrical and thermal analysis and design. The software integration framework is presented along with the software tools chosen for this study, which include Saber for electrical circuit simulation, Maxwell Q3D Extractor for parameter extraction, and I-DEAS for geometry and thermal modeling. Each of these software tools is controlled via its own macro language files. iSIGHT is then used to interface with these tools in order to achieve software integration. The DC-DC IPEM layout design is investigated and improved upon by using the integrated design methodology. Several examples of parametric study are presented. The first example shows the tradeoff between electrical and thermal performance for different ceramic layer thicknesses of module substrate. The next example looks at the commonmode noise problem that exists in different direct-bonded copper (DBC) layouts. Ph. D.

Although suitable CAD tools for thermal and electrical analyses in power electronic systems are available, traditional stand-alone simulation method seldom takes into consideration of the inter-dependency of semiconductor device power loss and junction temperature in an iterative process. However these dependencies are important, especially for applications where both cooling and power losses are driven by complex mechanisms. For a power supply system, a dynamic design process is necessary to address both electrical and thermal issues. It is because the steady state temperatures of the system are obtained from loss-and-temperature iteration. Once a system solid body model is built, iterations between power loss and junction temperature calculations are performed to obtain the steady state temperature distribution. Since reliability and failure rate of components are directly related to temperatures, an accurate model is critical to provide proper thermal management, which achieves maximum power density. All cooling-related data such as placement of components, airflow rate, heat sink size, and device types are subjected to design changes in order to meet ultimately the temperature requirements. The goal of this thesis is to demonstrate the benefits of integrated analysis and design tools applied in distributed power supply systems designs. First, it will significantly speed up the design process and eliminate the errors resulting from repeated manual data entry and information exchange. Second, the integrated electrical-thermal design tools encompass electrical, thermal, layout, and packaging design to obtain the optimal system design. Master of Science

This thesis presents the conducted electro-magnetic interference (EMI) prediction results for a continuous conduction mode (CCM) power factor correction (PFC) converter as well as the theoretical analysis for the noise generation and propagation mechanisms. In this thesis, multiple modeling and characterization techniques in the medium and high frequency ranges are developed for the circuit components that are important contributors to the EMI noise, so that a detailed simulation circuit for EMI prediction can be constructed. The conducted EMI noise prediction from the simulation circuit closely matches the measurement results obtained by a spectrum analyzer. Simulation time step and noise separator selection are two important issues for the noise simulation and measurement. These two issues are addressed and the solutions are proposed. The conducted EMI generation and propagation mechanisms are analyzed in a systematic way. Two loop models are proposed to explain the EMI noise behavior. The effects of the PFC inductor, the parasitic capacitance between the device and the heatsink, the rising/falling time of the MOSFET VDS voltage, and the input wires are studied to verify the validity of the loop models. Master of Science

Recently planar magnetic technologies have been widely used in power electronics, due to good cooling and ease of fabrication. High frequency operation of magnetic components is a key to achieve high power density and miniaturization. However, at high frequencies, skin and proximity effect losses in the planar windings become significant, and parasitics cannot be ignored. This piece of work deals with the modeling and design of planar integrated magnetic component for power electronics applications. First, one-dimensional eddy current analysis in some simple winding strategies is discussed. Two factors are defined in order to quantify the skin and proximity effect contributions as a function of frequency. For complicated structures, 2D and 3D finite element analysis (FEA) is adopted and the accuracy of the simulation results is evaluated against exact analytical solutions. Then, a planar litz structure is presented. Some definitions and guidelines are established, which form the basis to design a planar litz conductor. It can be constructed by dividing the wide planar conductor into multiple lengthwise strands and weaving these strands in much the same manner as one would use to construct a conventional round litz wire. Each strand is subjected to the magnetic field everywhere in the winding window, thereby equalizing the flux linkage. 3D FEA is utilized to investigate the impact of the parameters on the litz performance. The experimental results verify that the planar litz structure can reduce the AC resistance of the planar windings in a specific frequency range. After that, some important issues related to the planar boost inductor design are described, including core selection, winding configuration, losses estimation, and thermal modeling. Two complete design examples targeting at volume optimization and winding parasitic capacitance minimization are provided, respectively. This work demonstrates that planar litz conductors are very promising for high frequency planar magnetic components. The optimization of a planar inductor involves a tradeoff between volumetric efficiency and low value of winding capacitance. Throughout, 2D and 3D FEA was indispensable for thermal & electromagnetic modeling. Master of Science

Exploring RF models for an integrated power electronics module (IPEM) is crucial to analyzing and predicting its EMI performance. This thesis deals with the parasitics extraction approach for an active IPEM in a frequency range of 1MHz through 30MHz. Based on the classic electromagnetic field theory, the calculating equations of DC and AC parameters for a 3D conducting structure are derived. The influence of skin effect and proximity effect on AC resistances and inductances is also investigated at high frequencies. To investigate RF models and EMI performance of the IPEM, a 1kW 1MHz series resonant DC-DC converter (SRC) is designed and fabricated in this work. For extracting the stray parameters of the built IPEM, two main software simulation tools ¡ª Maxwell Quick 3D Parameter Extractor (Maxwell Q3D) and Maxwell 3D Field Simulator (Maxwell 3D), prevailing electromagnetic simulation products from Ansoft Corporation, are introduced in this study. By trading off between the numerical accuracy and computational economy (CPU time and consumption of memory size), Maxwell Q3D is chosen in this work to extract the parameters for the full bridge IPEM structure. The step-by-step procedure of using Maxwell Q3D is presented from pre-processing the 3D IPEM structure to post-processing the solutions, and exporting equivalent circuit for PSpice simulations as well. RF modeling of power MOSFETs is briefly introduced. In order to verify extracted parameters, in-circuit impedance measurements for the IPEM using Agilent 4294A Impedance Analyzer together with Agilent 42941A probe are then followed. Measured results basically verify the extracted data, while the discrepancy between measured results and simulated results is also analyzed. Master of Science

In modern power electronics systems there is a growing trend to replace discrete devices with integrated power electronic modules (IPEMs). In this way, several components can be replaced by a single component. By using prefabricated building blocks, the engineer simplifies the design process, reducing the total design cycle time and cost. By integrating only the necessary components to provide power switching, the end user has a pre-optimized building block with the flexibility to be used in a large variety of applications. Besides simplifying the design process, power modules should be designed in such a way as to improve the performance of the power converter. This begs the question as to how best to judge if one IPEM has better performance than another or better performance than its discrete counterpart. In analyzing a converter's performance, popular criteria include efficiency, power density, device stresses, and EMI. All of these criteria are strongly linked to the switching characteristics of the IPEM's power devices. This thesis is a comprehensive study of the requirements for obtaining and analyzing the switching characteristics of the IPEM's power devices. It outlines the important switching characteristics and the implications of each characteristic on converter performance. It deals with the relevant measurement issues, specifically addressing the minimum requirements, which sensors are most suitable, and problems leading to inaccurate data. A parametric study is conducted to determine the effects of several circuit and operating parameters on the switching characteristics. Using the resulting data and the knowledge from the measurement study, we can decide how to design the testbed layout, what operating conditions should be chosen for testing, and what effects of the tester must be decoupled to truly see the effects of IPEM design. The thesis concludes with the design of standard test equipment and procedures. Master of Science