351 results on '"Ohdomari, Iwao"'
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2. The main factor of the decrease in activity of luciferase on the Si surface
3. Real-time imaging of single-molecule fluorescence with a zero-mode waveguide for the analysis of protein-protein interaction
4. Ultrasensitive detection of biomolecules using functionalized multi-walled carbon nanotubes
5. Surface modification of silicon with single ion irradiation
6. Analysis of binding energies between luciferin and luciferase adsorbed on Si surface by docking simulations
7. Enhancing semiconductor device performance using ordered dopant arrays
8. Packing of submicrometer-sized polystyrene particles within the micrometer-sized recessed patterns on silicon substrate
9. Nanopatterning of hydroxy-terminated self-assembled monolayer taking advantage of terminal group modification
10. Transconductance Enhancement by Utilizing Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors
11. Electron-phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature
12. Demonstration of Transconductance Enhancement on (110) and (001) Strained-Nanowire FETs
13. Quantitative estimation of generation rates of Si/SiO2 interface defects by MeV He single ion irradiation
14. The immobilization of DNA on microstructured patterns fabricated by maskless lithography
15. Preferential immobilization of biomolecules on silicon microstructure array by means of electron beam lithography on organosilane self-assembled monolayer resist
16. Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films
17. Doping by Single Ion Implantation
18. Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and MOS Tunneling Current of Ultrathin SiO2 Films
19. Submicrometer-Sized Polystyrene Particles Packing on Silicon Microfabricated Substrate
20. Mechanism of {111} Facet Formation during Lateral Solid Phase Epitaxy of Silicon on Amorphous Insulator Substrates
21. Flat-band voltage control of a back-gate MOSFET by single ion implantation
22. Valence spin ordering of the superconducting multilayer below extraordinarily high temperatures
23. Modeling of a SiO 2/Si(001) structure including step and terrace configurations
24. X-ray diffraction study of strain distribution in oxidized Si nanowires.
25. A molecular simulation study of an organosilane self-assembled monolayer/SiO2 substrate interface.
26. Control of metal nanostructure morphology by means of applied Si potential
27. Modeling of SiO 2/Si(100) interface structure by using extended -Stillinger-Weber potential
28. Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke model.
29. Computer simulation of high-resolution transmission electron microscope images based on ball-and-spoke models of (100) Si/SiO2 interface.
30. Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation.
31. Computer simulation of high-resolution transmission electron microscopy images of Si/SiO2 interfaces.
32. Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy.
33. Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy.
34. Diffusion of gallium in quartz and bulk-fused silica.
35. Electron paramagnetic resonance study on the annealing behavior of vacuum deposited amorphous silicon on crystalline silicon.
36. Structure of surface layers of silicon heavily implanted with Ar.
37. Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution
38. Development of the single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system
39. Investigation of the (100)Si/amorphous insulator interface structure by a half-period image of a high-resolution electron microscope.
40. Analysis of Radiation-Enhanced Diffusion of Aluminum in Silicon.
41. Damage Assessment Methodology for Nonstructural Components with Inspection Robot
42. Development of the damage assessment methodology for ceiling elements
43. Challenge for STM observation of dopant activation process on Si(001): in‐situ ion irradiation and hydrogenation
44. Structural Monitoring with Inspection Robot
45. Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface
46. Significance of Direct Displacement Measurement based Health Monitoring
47. Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
48. X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections
49. Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs
50. Relative-story displacement sensor for measuring five-degree-of-freedom movement of building layers
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