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Real-time imaging of single-molecule fluorescence with a zero-mode waveguide (ZMW) was achieved. With modification of the ZMW geometry, the signal-to-background ratio is twice that obtainable with a conventional ZMW. The improved signal-to-background ratio makes it possible to visualize individual binding--release events between chaperonin GroEL and cochaperonin GroES at a concentration of 5 [micro]M. Two rate constants representing two-timer kinetics in the release of GroES from GroEL were measured with the ZMW, and the measurements agreed well with those made with a total internal reflection fluorescence microscopy. These results indicate that the novel ZMW makes feasible the direct observation of protein--protein interaction at an intracellular concentration in real time.

Author(s): Takahiro Shinada (corresponding author) [1]; Shintaro Okamoto [2]; Takahiro Kobayashi [2]; Iwao Ohdomari [1, 2] As the size of semiconductor devices continues to shrink, the normally random distribution of [...]

Generation rates of the interface defects, namely, the oxide trapped holes and the interface states for both n-ch MOSFETs (nMOS) and p-ch MOSFETs (pMOS) by MeV He single ions at zero bias conditions have been investigated quantitatively. The number of oxide trapped holes induced in nMOS and pMOS by 2 MeV He single ion have been estimated to be about 17.5 and 8.5, respectively. The number of interface states induced in nMOS and pMOS have been estimated to be about 6.6 and 2.4, respectively. The difference between nMOS and pMOS in the number of oxide trapped holes has been attributed to the difference in the surviving rate of holes during ion irradiation. By investigating the field-dependence of single ion induced oxide trapped holes, it has been found that the surviving rate of holes generated in oxide layer by ion irradiation for 2 MeV He ion varies as a power law dependence on electric field with an exponent of about 0.7 in the range between 0.0 to 2.0 MV/cm at room temperature.

Interface trap density was found to reduce with rising oxidation temperature and oxide thickness in a study of ultrathin silicon oxide (SiO2) films to determine their interface trap density (Dit) and process dependence. The experiment studied processes such as oxidation temperatures, oxide thickness and annealing temperature, time and environments used such as vacuum, deuterium and argon. Deuterium annealing reduced Dit more than argon annealing.

Strain distributions in oxidized Si nanowires fabricated on a (001)-oriented silicon-on-insulator wafer have been determined by analyzing intensity profiles of the diffraction, caused by the nanowire periodicity, around the 111 Bragg point. In this analysis, theoretical diffraction curves, calculated by a kinematical treatment, are fitted to experimental ones, examining positions of the central and fringe maxima and their intensity ratios. Strains in oxidized samples are shown to be negative at the bottom surface and positive at the top surface of nanowires changing with depth in a concave way. The magnitudes of the strains at the bottom surface and at the top surface increase monotonically with increasing the oxidation time. The determined strain of a sample oxidized at 850 °C for 5 h is 0.50% at the top surface and -0.11% at the bottom surface. [ABSTRACT FROM AUTHOR]

The bonding network of an alkylsilane self-assembled monolayer (SAM)/SiO2 substrate interface is investigated by means of canonical Monte Carlo (MC) simulations. SAM/SiO2 systems with different interfacial bonding topologies are sampled by the Metropolis MC method, and the AMBER potential with a newly developed organosilicon parameters are used to obtain an optimized structure with a given bonding topology. The underlying substrates are modeled as hydroxy-terminated (100) or (111) cristobalites. The SAM/SiO2 interface is characterized by a polysiloxane bonding network which comprises anchoring bonds and cross-linking bonds, namely, molecule-substrate and molecule-molecule Si–O–Si bonds, respectively. We show that at thermal equilibrium, the ratio of the number of anchoring bonds to cross-linking bonds decreases as a total Si–O–Si bond density increases, and that nevertheless, number of anchoring bonds always dominate over that of cross-linking bonds. Moreover we show that the total Si–O–Si bond density strongly affects the lateral ordering of the alkylsilane molecules, and that increase in the Si–O–Si bond density disorders the molecular packing. Our results imply that a lab-to-lab variation in the experimentally prepared SAMs can be attributed to different Si–O–Si bond densities at the SAM/SiO2 interface. [ABSTRACT FROM AUTHOR]

Focuses on a study which detailed the constriction of structural models of the a-SiO[sub2]/(100)Si interface using plastic balls and spokes to study the atomic scale structure of the thermally grown a-SiO[sub2]/(100)Si interface. Properties of the models; Techniques employed in order to investigate the atomic scale structure of the interface; Problem posed by the need for a size reduction.

Studies the computer simulation of high-resolution transmission electron microscope images based on ball-and-spoke models of silicon and silicon oxide interface. Importance of the study on the structure and chemistry of the interface between crystalline silicon and amorphous silicon oxide film; Procedure of image simulation; Discussion on the results of the study.

Investigates the behavior of ion implanted arsenic atoms during molybdenum silicide formation. Distribution of arsenic atoms implanted into silicon; Mechanism of the snowplow effect; Ways in which an epitaxial silicide is formed.

Deals with a study which dealt with the computer simulation of high-resolution transmission electron microscopy (HRTEM) images of the crystalline silicon (Si) and silicon dioxide interfaces. Purpose of HRTEM technology; Considerations for three surface morphologies of Si; Calculation procedures for the models of interfaces.

Presents a study which analyzed the structural study of microtwins in single-crystal silicon grown by lateral solid phase epitaxy (L-SPE) using high-resolution cross-sectional transmission electron microscopy. Benefits from using the multibeam interference technique; Aim in the investigation of silicon on insulator (SOI) technology; Candidate to fabricate the SOI structures; Factor important to make low-temperature process of the L-SPE advantageous.

Deals with a study which focused on the characterizations of the crystal defects during lateral solid-phase epitaxy and the origin of them. Experimental details; Results and discussion.

Presents a study that investigated the change in electron microscope images due to imaging conditions in (100) silicon/amorphous insulators. Analysis of the nature of half-period images; Procedure of image simulation; Calculation of the dependence of intensity on defocus.