152 results on '"Ohno, Takeo"'
Search Results
2. Current-induced magnetization switching using electrically-insulating spin-torque generator
3. Artificial Synapses Realized by Atomic Switch Technology
4. Artificial Synapses Realized by Atomic Switch Technology
5. Compound Semiconductor Oscillation Device Fabricated by Stoichiometry Controlled-Epitaxial Growth and Its Application to Terahertz and Infrared Imaging and Spectroscopy
6. Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics
7. Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment
8. Atomic Switches
9. Memristive operations demonstrated by gap-type atomic switches
10. Progress in the Atomic Switch
11. The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics
12. Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
13. Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency
14. Influence of rf sputter power on ZnO film characteristics for transparent memristor devices
15. Effects of AsH 3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction
16. Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH 3 and TEG in an ultra-high vacuum
17. Area-selective regrowth followed by AsH 3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
18. Be doping in GaAs by intermittent AsH 3/TEG supply in an ultra-high vacuum
19. Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device
20. Energy control of neutral oxygen particles passing through an aperture electrode
21. Current-induced magnetization switching using an electrically insulating spin-torque generator
22. Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device.
23. Ta2O5-based redox memory formed by neutral beam oxidation
24. Formation of Ge oxide film by neutral beam postoxidation using Al metal film
25. Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures
26. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation
27. Observation of a Ag protrusion on a Ag 2 S island using a scanning tunneling microscope
28. Biomimetics: Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch (Adv. Funct. Mater. 17/2012)
29. Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch
30. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
31. Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch
32. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
33. Atomic switches: atomic-movement-controlled nanodevices for new types of computing
34. Observation of a Ag protrusion on a Ag2S island using a scanning tunneling microscope
35. The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy
36. Tunneling current of GaAs ultrashallow sidewall n+p+n+ and p+n+in+ structure prepared by area-selective molecular layer epitaxy
37. Fabrication of Deep Silicon Microstructures by the Combination of Anodization and p++ Etch Stop
38. Learning Abilities Achieved by a Single Solid-State Atomic Switch
39. The substrate orientation dependence of Be doping in molecular layer epitaxy of GaAs
40. Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction
41. Characteristics of electron beam‐evaporated high k ‐TiOx thin films on n‐GaAs
42. Deep levels in GaAs ultrashallow sidewall pin junctions measured by photocapacitance method
43. Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions
44. Be doping in molecular layer epitaxy of GaAs
45. Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method
46. Effects of AsH[sub 3] Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction
47. Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum
48. Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction
49. Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum
50. Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.