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Blue, green, and red micro‐light‐emitting diodes (LEDs) are expected to serve as light sources for next‐generation full‐color displays. This study fabricates an InGaN LED with an active layer comprising stacked red, green, and blue active layers separated by interlayers using the metal‐organic vapor‐phase epitaxy method for application to a monolithic full‐color LED. Experimental results and band simulations reveal that the emission wavelength during the current injection is controllable via adjustments to the Si doping amount of the interlayer. For a Si doping amount of the interlayer of approximately 2 × 1018 cm−3, only the red active layer closest to the p‐side emits light with a wavelength of ≈610 nm. With a decrease in the Si doping amount in the interlayer, the emission intensity from the n‐side active layer, that is, the green and blue active layers, increases. Moreover, the Si‐doped interlayer acts as a barrier against holes diffusing from the p‐side to the n‐side, thus controlling the amount of carrier injected into each active layer. Additionally, the green and blue active layers under the red active layer improve the emission characteristics of the red active layer. These results indicate the importance of this technology for realizing monolithic, full‐color InGaN‐based LEDs. [ABSTRACT FROM AUTHOR]

Herein, the growth mechanism and defect structure of GaN‐based nanowire multiple‐quantum‐shells (NW‐MQSs) with cap layers combining tunnel junctions and n‐GaN are investigated in detail. In the NW‐MQS structure, defect structures are formed in three regions: (i) From the c‐plane active layer at the tip of NW because of the low crystal quality of the active layer. (ii) Basal‐plane stacking faults (BSFs) with partial dislocations (PDs) are generated from the m‐planes of the NW‐MQSs; these defects are triggered by the silicon nitride (SiNx) formed on the NW surface. While some defects terminate because of the half loop formed by the PDs along the lateral growth of cap layers, others terminate at the coalesced region of the cap layers grown from adjacent MQSs. (iii) Line defects due to low‐angle grain boundaries and planar defects due to the BSFs in region (ii) are formed in the region wherein cap layers coalesce. The defects reaching the surface of the cap layers predominantly depend on the number of defects generated from the c‐plane active layers in region (i). The growth mode and propagation mechanism of such defects are associated, and a method for realizing optical devices based on the high‐quality NW‐MQS structures is discussed. [ABSTRACT FROM AUTHOR]

Maintenance therapy (remission maintenance therapy for treating vasculitis): approximately 3-6 months after treatment initiation and after confirming that the symptoms of vasculitis, such as progression of renal failure, have disappeared. Treatment of anti-GBM antibody nephritis Patients with anti-GBM antibody nephritis have the worst renal prognosis among patients with RPGN; survival rate is very poor in the presence of pulmonary hemorrhage. Grades of recommendations: "We recommend" "We suggest" None Definition of disease Rapidly progressive glomerulonephritis (RPGN) is defined in Japan as "a syndrome that rapidly progresses to renal failure within a few weeks or months and is accompanied by urinary findings of nephritis." Diagnosis Differential diagnosis RPGN is a clinical syndrome that is classified based on its manifestations: primary RPGN, which only damages the kidneys, or secondary RPGN, which occurs in association with other systemic disorders and infections. [Extracted from the article]

Interband-resonant light modulation by intersubband-resonant light in undoped quantum wells is fast and is independent of the problems of carrier relaxation and heat dissipation. Calculation of the modulation incorporates the excitonic interband-transition and continuous level transition between the conduction and valence bands. A comparative study analyzes the modulation achieved using undoped and n-doped quantum wells. A real-time single-shot experiment at room temperature employs Ti-Al2O3 and CO2 lasers for interband- and intersubband-resonant lights in undoped quantum wells.

Analysis of interband-resonant light modulation by using intersubband-resonant light in n-doped quantum wells indicated that modulation efficiency relies on nonlinear optical coupling of interband- and intersubband-resonant lights. The barrier layers' selective n-doping raised degree of nonlinear coupling and efficiency of modulation.

Introduction: Risks of mortality and cardiovascular disease (CVD) are significantly higher in hemodialysis (HD) patients than in the general population, where dyslipidemia is an established risk factor for CVD and mortality. There is no clear conclusion, however, whether dyslipidemia is a significant risk factor for CVD and mortality in HD patients. Similarly, the association between the polyunsaturated fatty acids (PUFAs) and the mortality is not clear in HD patients. Methods: We retrospectively investigated mortality and CVD events in 420 HD patients. We classified patients into high‐ and low‐lipid groups depending on their lipid levels. Survival rates were calculated using the Kaplan–Meier analysis and evaluated by the log‐rank test. The risk estimates were computed using a multivariate Cox proportional hazard analysis. Findings: During their follow‐up (June 2011 to June 2016), 151 patients died (37 of CVD), and 112 patients experienced new CVD events. On Kaplan–Meier analysis, the number of all‐cause deaths and CVD events were significantly higher in the low HDL‐cholesterol group (P < 0.01, log‐rank test). Similarly, the number of all‐cause deaths was significantly higher in the high eicosapentaenoic acid/arachidonic acid ratio group (P < 0.01, log‐rank test). Multivariate Cox proportional analysis showed that HDL‐cholesterol was a significant prognostic indicator for new onset of CVD events (low: 0, high: 1, hazard ratio 0.66, 95% confidence interval 0.44–0.97; P = 0.04). Discussion: In HD patients, LDL‐cholesterol and non‐HDL‐cholesterol levels are not associated with mortality or CVD events. The HDL‐cholesterol level, however, is an independent predictor of new CVD events even in HD patients. [ABSTRACT FROM AUTHOR]

The aim of this research is to realize high‐efficiency light‐emitting diodes (LEDs) with a 3D core‐shell GaN nanowire. This article describes the growth of 3D core‐shell GaN nanowires, the formation of indium tin oxide (ITO) around the p‐GaN outer shell of the nanowires, and the characteristics of the fabricated nanowire‐LED (NW‐LED). The structural properties of the n‐GaN core, GaInN/GaN multiquantum shell (MQS), p‐GaN outer shell, and ITO electrode are investigated by scanning electron microscopy and scanning transmission electron microscopy. In addition, the optical and electrical characteristics of the NW‐LEDs are evaluated. The findings show that the grown n‐GaN cores have a uniform height and diameter, the MQS is defect‐free with a uniform film thickness, and p‐GaN outer shells with a uniform thickness are grown on both the m‐ and c‐planes. Consequently, a NW‐LED that emits light from the entire chip area is successfully realized by depositing an ITO electrode that covers the p‐GaN outer shells with a uniform film thickness. [ABSTRACT FROM AUTHOR]