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3. Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field Effect Transistors

Author

Inahara, Daisuke, primary, Matsuda, Shunsuke, additional, Matsumura, Wataru, additional, Okuno, Ryo, additional, Hanasaku, Koki, additional, Kowaki, Taketo, additional, Miyamoto, Minagi, additional, Yao, Yongzhao, additional, Ishikawa, Yukari, additional, Tanaka, Atsushi, additional, Honda, Yoshio, additional, Nitta, Shugo, additional, Amano, Hiroshi, additional, Kurai, Satoshi, additional, Okada, Narihito, additional, and Yamada, Yoichi, additional

Published
2023
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4. Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor

Author

You, Lu, primary, Matsumura, Wataru, additional, Ataka, Kazuya, additional, Matsuda, Shunsuke, additional, Inahara, Daisuke, additional, Hanasaku, Koki, additional, Okuno, Ryo, additional, Kowaki, Taketo, additional, Yao, Yongzhao, additional, Ishikawa, Yukari, additional, Kurai, Satoshi, additional, Okada, Narihito, additional, Tadatomo, Kazuyuki, additional, and Yamada, Yoichi, additional

Published
2022
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5. Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor.

Author

You, Lu, Matsumura, Wataru, Ataka, Kazuya, Matsuda, Shunsuke, Inahara, Daisuke, Hanasaku, Koki, Okuno, Ryo, Kowaki, Taketo, Yao, Yongzhao, Ishikawa, Yukari, Kurai, Satoshi, Okada, Narihito, Tadatomo, Kazuyuki, and Yamada, Yoichi

Abstract

This study proposes a nitrogen-polar (N-polar) Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN structure that can generate a large amount of two-dimensional electron gas to enhance the device development of samples. Additionally, we have analyzed the critical thickness of N-polar AlGaN/AlN based on the theoretical calculations of three different values of film thickness. The metalorganic vapor-phase epitaxy method is used to grow N-polar Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN on sapphire substrates. The substrates with a misorientation angle of 2° along the m -axis and a -axis directions are selected to determine the effect of the off-cut angle on sample flatness and currentâ€"voltage characteristics. Furthermore, we determine the effect of Al contents on N-polar Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN under the optimum growth conditions of the growth thickness of the top layer of AlGaN and sapphire substrate. The results indicate that the current throughput increases with a decrease in Al content. Lastly, we have fabricated the N-polar AlGaN/AlN heterostructure field effect transistor (FET) to demonstrate the static FET characteristics. [ABSTRACT FROM AUTHOR]

Published
2023
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