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Porous ferroelectric lead zirconate titanate (PZT) films are a promising material for various electronic applications. This study focuses on understanding how the structure-directing agent, polyvinylpyrrolidone, can alter the structure and electrical properties of porous PZT films prepared through chemical solution deposition. Films with various porosities of up to ~40 vol.% and pore connectivities from 3-0 to 3-3 were prepared and studied by capacitance–voltage, dielectric hysteresis, transient current, photocurrent, and local current techniques. We have found that a linear decrease in material volume in a porous film is not the only factor that determines film properties. The creation of new internal grain boundaries plays a key role in changing electrical properties. This research expands the understanding of physical phenomena in porous ferroelectric films and may facilitate the development of new materials and devices. [ABSTRACT FROM AUTHOR]

Conductive LaNiO3 (LNO) films with an ABO3 perovskite structure deposited on silicon wafers are a promising material for various electronics applications. The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate. Here, we report the formation of columnar grain structure in LNO films deposited on the Si-SiO2 substrate via layer-by-layer deposition with the control of soft-baking temperature and high temperature annealing time of each deposited layer. The columnar structure is controlled not by typical heterogeneous nucleation on the film/substrate interface, but by the crystallites' coalescence during the successive layers' deposition and annealing. The columnar structure of LNO film provides the low resistivity value ρ~700 µOhm·cm and is well suited to lead zirconate-titanate (PZT) film growth with perfect crystalline structure and ferroelectric performance. These results extend the understanding of columnar grain growth via CSD techniques and may enable the development of new materials and devices for distinct applications. [ABSTRACT FROM AUTHOR]

Porous ferroelectric lead zirconate–titanate (PZT) films with different internal structures are synthesized using a sol–gel technique and spin‐on deposition on platinized silicon substrates. The films' porosity is engineered using various structure‐directing agents: polyvinylpyrrolidone with a molecular weight of 360 000 (1–6.6 wt.%) and block copolymer surfactants Brij 30 and Brij 76 (30–60 wt.%). The films' structures are characterized by transmission electron microscopy. The PVP‐based films contain large, elongated pores with diameters as large as 100 nm. By contrast, the films prepared from solutions with block copolymers exhibit a small pore size depending on the surfactant molecular weight (10–19 nm for Brij 30 and 20–27 nm for Brij 76), with a mostly uniform distribution of channel‐like pores within the film volume. Despite their highly porous structures, all of the films show a columnar‐grain perovskite structure with grains as large as several micrometers and curved grain boundaries. The films demonstrate ferroelectric behavior with dielectric hysteresis, and their permittivity decreases with increasing porosity. Thus, the Brij 30 and Brij 76 copolymer surfactants can be used to engineer fine porous structures in PZT films for various applications in electronics. [ABSTRACT FROM AUTHOR]