107 results on '"Osinski, J.S."'
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2. High power 635 nm low-divergence ridge waveguide singlemode lasers
3. High-speed low-parasitic low-divergence 635 nm singlemode lasers
4. 660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier
5. 400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm
6. Green, holmium-doped upconversion fibre laser pumped by red semiconductor laser
7. GaInP/AlGaInP 670 nm singlemode DBR laser
8. High-power, spectrally coherent array of monolithic flared amplifier-master oscillator power amplifiers (MFA-MOPAs)
9. Electronically tunable, 1-W CW, near-diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)
10. Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)
11. Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers
12. High-power single-mode 2.0 mu m laser diodes
13. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers
14. High-power 2.0 mu m InGaAsP laser diodes
15. Threshold current analysis of compressive strain (0-1.8%) in low-threshold, long-wavelength quantum well lasers
16. 8.5 W CW 2.0 μm InGaAsP laser diodes
17. Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements
18. Low threshold current 1.5- mu m buried heterostructure lasers using strained quaternary quantum wells
19. Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates
20. Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
21. Low threshold 1.5 mu m quaternary quantum well lasers grown by MOCVD.
22. Evidence of gain enhancement in long wavelength strained quantum well laser diodes
23. Low threshold current lateral injection lasers on semi-insulating substrates fabricated using Si impurity-induced disordering
24. Quantum well lasers for optoelectronic integration grown by laser assisted atomic layer epitaxy
25. Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates.
26. III-V compund based heterostructure opto-thyristor for pulsed power applications.
27. Phased array of high-power, coherent, monolithic flared amplifier master oscillator power....
28. Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 mum....
29. Miniature integrated optical beam-splitter in AlGaAs/GaAs ridge waveguides.
30. Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets.
31. Novel tunable pulsed dye laser holography and subsequent processing for fabrication of optoelectronic device gratings.
32. MOCVD Growth Of AlGaAs On Structured Substrates A New Tool For Device Design
33. Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers
34. Predicting reactive fluid flow in RIM and RTM systems
35. The effect of strain on auger recomhination and temperature sensitivity in 1.5μm quantum well lasers
36. Low Threshold 1.3μm Strained and Lattice-Matched Quantum Well Lasers
37. 660 nm angled grating DFB lasers
38. Tunable 670-nm DBR lasers
39. Comparative study of extremely low threshold 1.3μm strained and lattice matched quantum well lasers
40. Study Of Auger Recombination And Differential Gain On Threshold Current And Temperature Sensitivity In 1.5 μm Quantum Well Lasers
41. DFB laser diodes operating at 785 and 852 nm
42. Characterization Of Long Wavelength Strained Ouanturn Well Laser Diodes
43. III-V compund based heterostructure opto-thyristor for pulsed power applications
44. Lateral Injection Lasers Employing Impurity-induced Disordering
45. Developmetnts in red lasers for optical data storage
46. Growth of lnP Related Compounds on Stuctured for the Fabrication of Narrow Stripe Lasers
47. Characterization Of Long Wavelength Strained Ouanturn Well Laser Diodes.
48. Study Of Auger Recombination And Differential Gain On Threshold Current And Temperature Sensitivity In 1.5 /spl mu/m Quantum Well Lasers.
49. Lateral Injection Lasers Employing Impurity-induced Disordering.
50. Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers.
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