37 results on '"Osinsky, A. V."'
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2. Integration of PLZT and BST Family Oxides with GaN
3. Properties of CdZnO/ZnO Heterostructures for UV Light Emitters
4. GaN-Based Devices for Reliable Operation at Very High Temperatures
5. Optical Characterization of Zn1-xCdxO Alloys Grown by Molecular-Beam Epitaxy
6. Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells
7. Integration of PLZT and BST Family Oxides with GaN
8. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions.
9. Fermi level pinning in heavily neutron-irradiated GaN.
10. Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy.
11. Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing.
12. Electronic states in modulation doped p-AlGaN/GaN superlattices.
13. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
14. Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
15. Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy.
16. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition
17. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3thin film
18. Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions
19. Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures
20. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors
21. Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy
22. Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy
23. Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices
24. Electrical and optical properties of doped p-type GaN superlattices
25. Optical Characterization of ZnCdO Alloys Grown by Molecular-Beam Epitaxy
26. Neutron irradiation effects in p-GaN
27. Optical loss mechanisms in GeSiON planar waveguides
28. Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions
29. Characterization of High Dose Mn, Fe, and Ni implantation intop-GaN
30. Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices
31. High quality GaN–InGaN heterostructures grown on (111) silicon substrates
32. Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN.
33. GaN-Based Devices for Reliable Operation at Very High Temperatures
34. Properties of CdZnO/ZnO Heterostructures for UV Light Emitters
35. Optical Characterization of Zn1-xCdxO Alloys Grown by Molecular-Beam Epitaxy
36. Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments
37. Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes
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