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Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility. In this paper, we demonstrate RF reflectometry in gate-defined bilayer graphene quantum devices using RFSoC-based measurement architecture. By controlling the confinement strength through gate voltages, we achieve both Fabry-P\'erot interferometer and quantum dot operations in a single device. Although impedance matching conditions currently limit the measurement sensitivity, we identify pathways for optimization through tunnel barrier engineering and resonator design. These results represent a step toward integrating high-bandwidth measurements with scalable quantum devices., Comment: 6 pages, 4 figures

To realize practical quantum computers, a large number of quantum bits (qubits) will be required. Semiconductor spin qubits offer advantages such as high scalability and compatibility with existing semiconductor technologies. However, as the number of qubits increases, manual qubit tuning becomes infeasible, motivating automated tuning approaches. In this study, we use U-Net, a neural network method for object detection, to identify charge transition lines in experimental charge stability diagrams. The extracted charge transition lines are analyzed using the Hough transform to determine their positions and angles. Based on this analysis, we obtain the transformation matrix to virtual gates. Furthermore, we identify the single-electron regime by clustering the Hough transform outputs. We also show the single-electron regime within the virtual gate space. These sequential processes are performed automatically. This approach will advance automated control technologies for large-scale quantum devices., Comment: 9 pages, 6 figures

Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, the formation of few-electron double quantum dots is observed by obtaining their charge stability diagram. Also, a charge stability diagram with a gate pulse sequence is measured. We discuss the strong electron correlation in ZnO, which leads to nearly degenerate spin-singlet and -triplet two-electron states in the (0, 2) charge state, and the perspectives on spin-state readout., Comment: 6 pages, 4 figures

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under the current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find that the gate capacitance is significantly decreased by the current collapse. This suggests that the current collapse changes the distribution of trapped electrons at the device surface, which is reported in the previous study by operando X-ray spectroscopy. Also, we show external control of quantum dot formation, previously challenging in an FET structure, by using current collapse., Comment: 11 pages, 4 figures

Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic properties of nanostructures. This detection is achieved using quantum dot charge sensors, with its speed enhanced by high-speed RF reflectometry. Recently, real-time processing of data from RF reflectometry has attracted much attention to quantum information processing. In this paper, we propose a sequential method based on Bayes' theorem for estimating the charge state and compare its performance with the averaging approach and threshold judgment. When the noise variance differs between the empty and occupied states, the Bayesian approach demonstrates a lower error score, facilitating the extraction of more data points in real-time charge state estimation. Additionally, the Bayesian approach outperforms the averaging method and threshold judgment in terms of error rates for charge state estimation, even during charge transitions. This technique is broadly applicable to single-electron detection and holds substantial utility for quantum bit readout and the operation of nanoprobes that utilize single-electron detection., Comment: 19 pages, 8 figures

Transition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement and high edge densities. However, effective growth methods for self-aligned TMD NRs are still lacking. We demonstrate a versatile approach for lattice-guided growth of dense, aligned MoS2 NR arrays via chemical vapor deposition (CVD) on anisotropic sapphire substrates, without tailored surface steps. This method enables the synthesis of NRs with widths below 10 nm and longitudinal axis parallel to the zigzag direction, being also extensible to the growth of WS2 NRs and MoS2-WS2 hetero-nanoribbons. Growth is influenced by both substrate and CVD temperature, indicating the role of anisotropic precursor diffusion and substrate interaction. The 1D nature of the NRs was asserted by the observation of Coulomb blockade at low temperature. Pronounced catalytic activity was observed at the edges of the NRs, indicating their promise for efficient catalysis., Comment: 41 pages, 27 figures

Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices., Comment: 14 pages, 6 figures

The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a triple quantum dot by using fast charge-state readout realized by rf reflectometry. We observe real-time charge transitions and analyze the tunneling rate comparing with the first-order tunneling processes. We also measure the gate voltage dependence of the QCA transition and show that it can be controlled by the voltage., Comment: 11pages, 4 figures

Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demonstrate proportional-integral-differential feedback control of the radio-frequency reflectometry in GaN nanodevices using a field-programmable gate array. This technique can maintain the operating point of the charge sensor with high sensitivity. The system also realizes a wide dynamic range and high sensor sensitivity through the monitoring of the feedback signal. This method has potential applications in exploring dynamics and instability of electronic and quantum states in nanostructures., Comment: 13 pages, 5 figures

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$\mu $m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential., Comment: 10 pages, 5 figures

Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which enables high-speed electric measurements is important. Here we demonstrate RF-reflectometry in bilayer graphene devices. We utilize a micro graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance which degrades the RF-reflectometry. We measure the resonance properties of a tank circuit which contains the bilayer graphene device. We form RF-reflectmetory setup and compared the result with the DC measurement, and confirmed their consistency. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that RF-reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the research of bilayer graphene-based quantum devices by fast readout of the states., Comment: 16 pages, 5 figures

Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box, will be useful. In this study, we analyze the explainability of the machine learning model estimating charge states in quantum dots by gradient-weighted class activation mapping, which identified class-discriminative regions for the predictions. The model predicts the state based on the change transition lines, indicating that human-like recognition is realized. We also demonstrate improvements of the model by utilizing feedback from the mapping results. Due to the simplicity of our simulation and pre-processing methods, our approach offers scalability without significant additional simulation costs, demonstrating its suitability for future quantum dot system expansions., Comment: 17 pages, 4 figures

The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a stepping stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems., Comment: 11 pages, 4 figures

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.

We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components., Comment: 21 pages, 4 figures

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels., Comment: 10 pages, 4 figures

The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $\pi$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits., Comment: 10 pages, 7 figures

Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot via an exchange-coupled ancilla qubit. The ancilla qubit, encoded in the singlet-triplet two-electron subspace, is entangled with the single spin and subsequently read out in a single shot projective measurement at a rate two orders of magnitude faster than the spin relaxation. The QND nature of the measurement protocol is evidenced by observing a monotonic increase of the readout fidelity over one hundred repetitive measurements against arbitrary input states. We extract information from the measurement record using the method of optimal inference, which is tolerant to the presence of the relaxation and dephasing. The QND measurement allows us to observe spontaneous spin flips (quantum jumps) in an isolated system with small disturbance. Combined with the high-fidelity control of spin qubits, these results pave the way for various measurement-based quantum state manipulations including quantum error correction protocols., Comment: This is a pre-print of an article published in Nature Nanotechnology. The final authenticated version is available online at: https://doi.org/10.1038/s41565-019-0426-x

We analyze time evolution of charge and spin states in a quantum dot coupled to an electric reservoir. Utilizing high-speed single-electron detection, we focus on dynamics induced by the first-order tunneling. We find that there is a difference between the spin and the charge relaxation: the former appears slower than the latter. The difference depends on the Fermi occupation factor and the spin relaxation becomes slower when the energy level of the quantum dot is lowered. We explain this behavior by a theory which includes the first-order tunneling processes. We conduct detailed comparison of the experiment and the theory with changing the energy of the quantum dot levels, and the theory can reproduce the experimental results., Comment: 4 pages, 4 figures

Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number of dots used for the single spin control in multiple quantum dots. We observe Rabi oscillations and electron spin resonance (ESR) for each dot and evaluate the spin-electric coupling of the four dots, and finally discuss practical approaches to independently address single spin control in multiple quantum dot systems containing even more quantum dots., Comment: 5 pages, 4 figures

We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon., Comment: 13 pages, 3 figures

Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures., Comment: 6 pages, 6 figures

Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and readout have been established down to a single electron level. We use these techniques to explore spin dynamics in a hybrid system, namely a QD coupled to a two dimensional electronic reservoir. The proximity of the lead results in relaxation dynamics of both charge and spin, the mechanism of which is revealed by comparing the charge and spin signal. For example, higher order charge tunneling events can be monitored by observing the spin. We expect these results to stimulate further exploration of spin dynamics in QD-lead hybrid systems and expand the possibilities for controlled spin manipulations., Comment: 5 pages, 4 figures

A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the five dots as confirmed by measurements of the charge states of the three nearest dots to the respective charge sensor. The gate performance of the measured stability diagram is well reproduced by a capacitance model.These results provide an important step towards realizing controllable large scale multiple quantum dot systems., Comment: 10 pages, 4 figures

Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantum dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.

Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin using a transition across a multi-level avoided crossing. This process is accelerated by the noise-induced dephasing through a variant of the quantum Zeno effect, without sacrificing the coherence of the entangled state. Our finding brings insight into the spin dynamics in open quantum systems coupled to noisy environments, opening an avenue to quantum state manipulation utilizing decoherence effects., Comment: 33 pages, 5 figures

Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of the electron spin resonance is possible., Comment: 11 pages, 3 figures

Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids.

The manipulation of single spins in double quantum dots by making use of the exchange interaction and a highly inhomogeneous magnetic field was discussed in [W. A. Coish and D. Loss, Phys. Rev. B 75, 161302 (2007)]. However, such large inhomogeneity is difficult to achieve through the slanting field of a micromagnet in current designs of lateral double dots. Therefore, we examine an analogous spin manipulation scheme directly applicable to realistic GaAs double dot setups. We estimate that typical gate times, realized at the singlet-triplet anticrossing induced by the inhomogeneous micromagnet field, can be a few nanoseconds. We discuss the optimization of initialization, read-out, and single-spin gates through suitable choices of detuning pulses and an improved geometry. We also examine the effect of nuclear dephasing and charge noise. The latter induces fluctuations of both detuning and tunneling amplitude. Our results suggest that this scheme is a promising approach for the realization of fast single-spin operations., Comment: 13 pages, 11 figures

We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot device has gate performance relevant for implementing spin-based four-qubit systems with controllable exchange couplings., Comment: 6 pages, 4 figures

We demonstrated a method to probe local electronic states and energy relaxation in quantum Hall edge states utilizing quantum point contacts. We evaluated relaxation lengths in two cases; first, with electron tunneling, and second, only with energy exchange without tunneling between edge states. The results were consistent with previous experiments and validated our method with quantum point contacts. We applied this method to measure the energy relaxation length around a hotspot in quantum Hall regimes and revealed the possible short-distance relaxation process to be the relaxation due to energy exchange between edge states without electron tunneling., Comment: 4 pages, 4 figures

We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron tunneling into singlet and triplet states in the dot, we can detect the local spin polarization formed in the target device. We confirm the validity of this detection scheme utilizing spin split quantum Hall edge states. We also observe non-zero local spin polarization at the device edge in low magnetic fields, which is not detectable with conventional macroscopic probes., Comment: 4 pages, 3 figures

We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect., Comment: 5 pages, 5 figures

We propose realistic methods to detect local spin polarization, which utilize a quantum dot side coupled to the target system. By choosing appropriate states in the dot, we can put spin selectivity to the dot and detect spins in the target with small disturbance. We also present an experiment which realizes one of the proposed spin detection schemes in magnetic fields., Comment: 5 pages, 6 figures

We report excited-state spectroscopy on a quantum dot side-coupled to a quantum wire with accurate energy estimation. Our method utilizes periodic voltage pulses on the dot, and the energy calibration is performed with reference to the bias voltage across the wire. We demonstrate the observation of the orbital excited state and the Zeeman splitting in a single dot., Comment: 3 pages, 4 figures

We have studied the Fano effect in a few-electron quantum dot side-coupled to a quantum wire. The conductance of the wire, which shows an ordinal staircase-like quantization without the dot, is modified through the interference (the Fano effect) and the charging effects. These effects are utilized to verify the exhaustion of electrons in the dot. The "addition energy spectrum" of the dot shows a shell structure, indicating that the electron confinement potential is fairly circular. A rapid sign inversion of the Fano parameter on the first conductance plateau with the change of the wire gate voltage has been observed, and explained by introducing a finite width of dot-wire coupling., Comment: 11 pages, 7 figures

Although the conductance of a closed Aharonov-Bohm interferometer, with a quantum dot on one branch, obeys the Onsager symmetry under magnetic field reversal, it needs not be a periodic function of this field: the conductance maxima move with both the field and the gate voltage on the dot, in an apparent breakdown of `phase rigidity'. These experimental findings are explained theoretically as resulting from multiple electronic paths around the interferometer ring. Data containing several Coulomb blockade peaks, whose shapes change with the magnetic flux, are fitted to a simple model, in which each resonant level on the dot couples to a different path around the ring.