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487 results on '"Ou, Jian-Zhen"'

24. Visible-Light-Driven Two-Dimensional Indium Oxysulfide for Sensitive NO2 Detection.

Author

Ou, Rui, Xu, Kai, Ha, Nam, Ren, Guanghui, Trinh, Vien, Hu, Yihong, Ma, Qijie, Zhang, Bao Yue, Wen, Xiaoming, Cheng, Yinfen, Zhang, Zhenyue, Fei, Zhengdong, Li, Zhong, and Ou, Jian Zhen

Abstract

Room-temperature optoelectronic gas sensing presents a viable solution for efficient and low-cost NO2 gas monitoring. Two-dimensional (2D) metal oxychalcogenides, induced by the partial sulfur replacement with oxygen in metal chalcogenide, have been considered to be suitable sensitive materials owing to their excellent long-term stability and complete reversibility. However, the correlation of oxygen-to-sulfur content with gas sensing performances has yet to be known, hindering the optimization process of such an emerging NO2 gas sensing approach. In this work, we realize 2D ultrathin indium oxysulfide by combining the annealing of bulk In2S3 crystals and subsequently liquid phase exfoliation, while the degree of sulfur replacement with oxygen is controlled by the initial annealing temperature. At an optimum annealing temperature of 800 °C, the sample exhibits an optical bandgap of 2.19 eV and a photoexcited carrier lifetime of 272.82 ns. As a result, it demonstrates a response factor of 7.26 for 126 ppb of NO2 under blue light illumination at room temperature, while complete reversibility, high selectivity, and excellent long-term stability are also achieved. An extremely low limit-of-detection of 0.0342 ppb is shown, far beyond that of reported room-temperature optoelectronic NO2 sensors. This work presents the optimization of the implementation of 2D metal oxychalcogenides in NO2 gas sensing, paving the way to develop next-generation NO2 monitoring systems. [ABSTRACT FROM AUTHOR]

Published
2024
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25. Upcycled Graphene Oxide Nanosheets for Reversible Room Temperature NO 2 Gas Sensor.

Author

Trinh, Vien, Xu, Kai, Yu, Hao, Ha, Nam, Hu, Yihong, Khan, Muhammad Waqas, Ou, Rui, Luan, Yange, Zhang, Jiaru, Ma, Qijie, Ren, Guanghui, and Ou, Jian Zhen

Subjects
GAS detectors, GRAPHENE oxide, NANOSTRUCTURED materials, P-type semiconductors, PLASTIC scrap, MONTMORILLONITE
Abstract

Graphene oxide (GO) nanosheets, as one of the most studied graphene derivatives, have demonstrated an intrinsically strong physisorption-based gas–matter behavior, owing to its enhanced volume–surface ratio and abundant surface functional groups. The exploration of efficient and cost-effective synthesis methods for GO is an ongoing task. In this work, we explored a novel approach to upcycle inexpensive polyethylene terephthalate (PET) plastic waste into high-quality GO using a combination of chemical and thermal treatments based on a montmorillonite template. The obtained material had a nanosheet morphology with a lateral dimension of around ~2 µm and a thickness of ~3 nm. In addition, the GO nanosheets were found to be a p-type semiconductor with a bandgap of 2.41 eV and was subsequently realized as a gas sensor. As a result, the GO sensor exhibited a fully reversible sensing response towards ultra-low-concentration NO2 gas with a limit of detection of ~1.43 ppb, without the implementation of an external excitation stimulus including elevating the operating temperature or bias voltages. When given a thorough test, the sensor maintained an impressive long-term stability and repeatability with little performance degradation after 5 days of experiments. The response factor was estimated to be ~11% when exposed to 1026 ppb NO2, which is at least one order of magnitude higher than that of other commonly seen gas species including CH4, H2, and CO2. [ABSTRACT FROM AUTHOR]

Published
2024
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32. Excellent No2 Gas Sensor Based on Ultrathin Sns2 Nanoplates: Experimental and Dft Calculation

Author

Chu, Hung Manh, primary, Nguyet, To Thi, additional, Hong, Hoang Si, additional, Thai, Nguyen Xuan, additional, Thang, Pham Van, additional, Chu, Xuan Thi, additional, Nguyen, Duy Van, additional, Theu, Luong Thi, additional, Dinh, Van An, additional, Nguyen, Hugo, additional, Ou, Jian Zhen, additional, Chien, Nguyen Duc, additional, and Nguyen, Duc Hoa, additional

Published
2024
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35. Thickness-Dependent Room-Temperature Optoelectronic Gas Sensing Performances of 2D Nonlayered Indium Oxide Crystals from a Liquid Metal Printing Process

Author

Cheng, Yinfen, primary, Li, Zhong, additional, Cheng, Liang, additional, Yuan, Yuxiao, additional, Xie, En, additional, Cao, Xiaolong, additional, Xin, Zhenqing, additional, Liu, Yaoyang, additional, Tang, Tao, additional, Hu, Xinyi, additional, Xu, Kai, additional, Manh Hung, Chu, additional, Jannat, Azmira, additional, Li, Yong Xiang, additional, Chen, Hui, additional, and Ou, Jian Zhen, additional

Published
2023
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42. Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals.

Author

Carey, Benjamin J, Ou, Jian Zhen, Clark, Rhiannon M, Berean, Kyle J, Zavabeti, Ali, Chesman, Anthony SR, Russo, Salvy P, Lau, Desmond WM, Xu, Zai-Quan, Bao, Qiaoliang, Kevehei, Omid, Gibson, Brant C, Dickey, Michael D, Kaner, Richard B, Daeneke, Torben, and Kalantar-Zadeh, Kourosh

Abstract

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Published
2017

46. Recent advances on hybrid integration of 2D materials on integrated optics platforms

Author

Ma Qijie, Ren Guanghui, Mitchell Arnan, and Ou Jian Zhen

Subjects
2d materials, integrated optics, hybrid integration, optoelectronic devices, Physics, QC1-999
Abstract

The burgeoning research into two-dimensional (2D) materials opens a door to novel photonic and optoelectronic devices utilizing their fascinating electronic and photonic properties in thin-layered architectures. The hybrid integration of 2D materials onto integrated optics platforms thus becomes a potential solution to tackle the bottlenecks of traditional optoelectronic devices. In this paper, we present the recent advances of hybrid integration of a wide range of 2D materials on integrated optics platforms for developing high-performance photodetectors, modulators, lasers, and nonlinear optics. Such hybrid integration enables fully functional on-chip devices to be readily accessible researchers and technology developers, becoming a potential candidate for next-generation photonics and optoelectronics industries.

Published
2020
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