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1. Solid-state microwave amplification into millimetric frequencies

4. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode.

5. Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities.

8. In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

19. Thermal measurement a requirement for monolithic microwave integrated circuit design

21. GaN HFT development at QinetiQ’

23. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

41. Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT Transistor.

42. \In0.53\Ga0.47\As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz.

43. Infrared radiance and temperature measurements on the mesa side of Gunn diodes.

44. Effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor device.

45. On the Temperature and Carrier Density Dependence of Electron Saturation Velocity in an AlGaN/GaN HEMT.

46. Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds).

47. Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds).

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