Search

In the developing field of nanotechnology, ZnO (zinc oxide) based semiconductor samples have emerged as the foremost choice due to their immense potential for advancing the development of cutting‐edge nanodevices. Due to its excellent chemical stability, low cost, and non‐toxicity to biological systems, it is also utilized in various investigations. In this study, the successive ionic layer adsorption and reaction (SILAR) method was used to generate FTO (fluorine‐doped tin oxide)/ZnO, and tin (Sn)–copper (Cu)‐doped ZnO thin films at varying concentrations on FTO substrates. After being stacked 40 times in varying concentrations on the FTO substrate, FTO/ZnO thin films and Sn–Cu‐doped thin films were annealed at 300°C. Using Scanning Electron Microscopy (SEM) Energy Dispersive Spectroscopy‐(EDS), the agar diffusion test, and the viability cell counting method, the minimum inhibitory concentration, structural properties, surface morphology, antibacterial properties, bacterial adhesion, and survival organism count of FTO/ZnO thin films and Sn–Cu‐doped thin films were investigated. Both doped and FTO/ZnO films with varying Sn–Cu concentrations expanded harmonically on the FTO substrate, according to the SEM‐EDS investigation. The doping concentration affected their morphological properties, causing changes depending on the doping level. Antibacterial activity was observed in the powder metals, but no antibacterial activity was found in the thin film form. The highest adhesion rate of bacterial organisms on the produced samples was observed when the FTO/ZnO/Sn–Cu doping rate was 1%. In addition, the lowest adhesion rate was observed when the FTO/ZnO/Sn–Cu additive ratio was 3%. Research Highlights: ZnO based semiconductors highlight significant potential in advancing nanodevice technology due to their chemical stability, cost‐effectiveness, and biocompatibility.Employing the SILAR method, the study innovatively fabricates FTO/ZnO and Sn–Cu‐doped ZnO thin films on FTO substrates, exploring a novel approach in semiconductor manufacturing.Post annealing at 300°C, the research examines the structural and surface morphological changes in the films, contributing to the understanding of semiconductor behavior under varying conditions.The study delves into the antibacterial properties of ZnO thin films, offering insights into the potential biomedical applications of these materials.SEM‐EDS analysis reveals that doping concentrations crucially influence the morphological properties of ZnO thin films, shedding light on the optimization of semiconductor performance.Findings indicate a specific doping rate (1% Sn–Cu) enhances bacterial adhesion, while a 3% additive ratio minimizes it, suggesting implications for biomedical device engineering and antibacterial surface design. [ABSTRACT FROM AUTHOR]

Wireless Multimedia Sensor Networks (WMSNs) transmit heterogeneous data having different quality of service and urgency constraints. WMSNs focus on offering QoS for multimedia transmission while Wireless Sensor Networks focus on minimizing energy consumption. To overcome urgency challenges, a new traffic and QoS-aware cross-layer MAC protocol for WMSNs namely urgMAC is proposed in this paper. The urgMAC aims to provide continuous QoS support with video quality tradeoff at the application layer dynamically for applications such as habitat monitoring, military border surveillance and border monitoring containing specific urgency challenges. To this end, the urgMAC includes new mechanisms called Two Tiered Service Differentiation Mechanism, Adaptive Data Rate Adjustment Mechanism, Urgency-based Contention Window Size Adaptation, Traffic Type Adaptive Duty Cycle and Multimedia Message Passing. The urgMAC has been modeled and simulated by Riverbed Modeling and Simulation Software. In addition, the urgMAC is compared with the recent protocols in the literature, and it achieves better results in terms of end-to-end delay and channel utilization. [ABSTRACT FROM AUTHOR]

Indium sulfide films were deposited by radio frequency magnetron sputtering technique on soda lime glass substrate. The deposition was conducted at the temperature of 150 °C and prepared films were then thermally annealed under argon atmosphere at 350 °C and 450 °C for 30 min. The impact of post-thermal annealing treatment on the properties of the films was investigated. From X-ray diffraction analysis, the formation of the stable tetragonal β-In2S3 crystal structure was substantiated and revealed that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in surface topographies and morphologies of the films depending on the post-thermal annealing process were examined by atomic force microscopy and scanning electron microscopy techniques, respectively. The stoichiometric ratio of constituent elements in the films was obtained by elemental analysis and it was seen that the films had slightly sulfur (S) deficit composition. It was found that the concentration of S slightly increased with the thermal annealing process. The room temperature photoluminescence spectra revealed that the films included vacancies of sulfur (VS: donor) and indium (In) (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70, 2.20, and 2.71 eV. [ABSTRACT FROM AUTHOR]

Al-doped zinc oxide (AZO) thin films were deposited on indiumtin oxide (ITO) coated polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputteringmethod at roomtemperature. The effects of filmthickness on the surface structure and the photoluminescence properties of the films were investigated by atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (PL). AFM analysis showed that the surface of all films was extremely flat and uniform at nanoscale. Root mean square (RMS) value of the surface roughness which scanned the surface area of 3 μm by 3 μm and grain size increased with increasing the filmthickness. Thus, the surface morphology of the films became rough because of the coarse grains. The depth profile of AZO layers was analyzed by SIMS. It was found that the thickness of the AZO layer is almost same with the desired film thickness. The PL intensity of the dominant peak decreased and shifted slightly towards the shorter wavelengths with increasing the film thickness. According to the relationships between luminescence intensity and crystalline characteristics, it was observed that the intensity of the peak decreased by the increased surface area of the grains. [ABSTRACT FROM AUTHOR]