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This paper presents a summary of the available single-phase ac–dc topologies used for EV/PHEV, level-1 and -2 on-board charging and for providing reactive power support to the utility grid. It presents the design motives of single-phase on-board chargers in detail and makes a classification of the chargers based on their future vehicle-to-grid usage. The pros and cons of each different ac–dc topology are discussed to shed light on their suitability for reactive power support. This paper also presents and analyzes the differences between charging-only operation and capacitive reactive power operation that results in increased demand from the dc-link capacitor (more charge/discharge cycles and increased second harmonic ripple current). Moreover, battery state of charge is spared from losses during reactive power operation, but converter output power must be limited below its rated power rating to have the same stress on the dc-link capacitor. [ABSTRACT FROM AUTHOR]

This paper presents a cascaded H-bridge multilevel boost inverter for electric vehicle (EV) and hybrid EV (HEV) applications implemented without the use of inductors. Currently available power inverter systems for HEVs use a dc-dc boost converter to boost the battery voltage for a traditional three-phase inverter. The present HEV traction drive inverters have low power density, are expensive, and have low efficiency because they need a bulky inductor. A cascaded H-bridge multilevel boost inverter design for EV and HEV applications implemented without the use of inductors is proposed in this paper. Traditionally, each H-bridge needs a dc power supply. The proposed design uses a standard three-leg inverter (one leg for each phase) and an H-bridge in series with each inverter leg which uses a capacitor as the dc power source. A fundamental switching scheme is used to do modulation control and to produce a five-level phase voltage. Experiments show that the proposed dc-ac cascaded H-bridge multilevel boost inverter can output a boosted ac voltage without the use of inductors. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory. has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter. [ABSTRACT FROM AUTHOR]

Silicon carbide (SIC) unipolar devices have much higher breakdown voltages than silicon (Si) unipolar devices because of the ten times greater electric field strength of SiC compared with Si. 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings. [ABSTRACT FROM AUTHOR]

The emergence of silicon carbide- (SIC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL) including SiC device design and system modeling studies, will be given. [ABSTRACT FROM AUTHOR]

In this article, the effect of the dead-time on a single-phase wireless power transfer (WPT) system is studied in detail. In practice, the dead-time is always placed between the complementary switching pulses of the inverter phase-leg. At higher operating frequencies, the dead-time issues in the resonant inverter become critical, especially as the power level increases. The detailed analysis of the dead-time on a WPT system is discussed for different operating conditions of the inverter duty-cycle and power factor. The switching characteristics of the WPT system inverter are analyzed, and the notch phenomenon that appears at the output of the inverter is also discussed. A notch equation based on the observations is derived to predict the notch occurrence during the system operation. Furthermore, the mathematical expressions are presented for different notch conditions. Subsequently, the effect of the notches on the sensitivity and the power transfer of the series–series compensated WPT system is analyzed. Finally, the approach is verified experimentally on an 8-kW WPT system prototype, and the results are compared with the theoretical analysis. [ABSTRACT FROM AUTHOR]

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. This article presents a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on-state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs. [ABSTRACT FROM AUTHOR]

Heatsink design is critical for power density and reliability enhancement of power semiconductor modules. In this letter, an automated design and optimization methodology for air-cooled heatsinks are proposed based on genetic algorithm and finite element analysis. While the genetic algorithm generates a population of candidates with complex heatsink cross-section geometry in each iteration, finite element analysis is used to evaluate the fitness function of individual heatsink, i.e., junction temperature of semiconductor devices. With the rule of “survival of the fittest,” the proposed methodology eventually converges to an optimum heatsink design with the lowest device junction temperature. The optimized heatsink is fabricated through three-dimensional printing technology for thermal performance evaluation. Simulation and experimental evaluations have been conducted based on a 50-kW three-phase air-cooled inverter with the fabricated heatsinks. The comparative evaluation results show that the optimized heatsink is superior over a customized solution by 27% less in size and 6% lower in junction temperature. [ABSTRACT FROM AUTHOR]

The concept of the magnetic amplifier, a common electromagnetic device in electronic applications in the past, has seldom been used in power systems. The magnetic amplifier-based power-flow controller (MAPFC), an innovative low-cost device that adopts the idea of the magnetic amplifier for power-flow control applications, is introduced in this paper. The uniqueness of MAPFC is in the use of the magnetization of the ferromagnetic core, shared by an ac and a dc winding, as the medium to control the ac winding reactance inserted in series with the transmission line to be controlled. Large power flow in the line can be regulated by the small dc input to the dc winding. A project on the R&D of an MAPFC has been funded by the U.S. Department of Energy (DOE) and conducted by the Oak Ridge National Laboratory (ORNL), the University of Tennessee-Knoxville, and Waukesha Electric Systems, Inc. since early 2012. Findings from the project are presented along with some results obtained in a laboratory environment. [ABSTRACT FROM AUTHOR]

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation. [ABSTRACT FROM PUBLISHER]

Reliability of power converters and lifetime prediction has been a major topic of research in the last few decades, especially for traction applications. The main failures in high power semiconductors are caused by thermomechanical fatigue. Power cycling and temperature cycling are the two most common thermal acceleration tests used in assessing reliability. The objective of this paper is to study the various power cycling tests found in the literature and to develop generalized steps in planning application specific power cycling tests. A comparison of different tests based on the failures, duration, test circuits, and monitored electrical parameters is presented. [ABSTRACT FROM AUTHOR]

The application of silicon carbide (SiC) devices as battery interface, motor controller, etc., in a hybrid electric vehicle (HEV) will be beneficial due to their high-temperature capability, high-power density, and high efficiency. Moreover, the light weight and small volume will affect the whole powertrain system in a HEV and, thus, the performance and cost. In this paper, the performance of HEVs is analyzed using the vehicle simulation software Powertrain System Analysis Toolkit (PSAT). Power loss models of a SiC inverter based on the test results of latest SiC devices are incorporated into PSAT powertrain models in order to study the impact of SiC devices on HEVs from a system standpoint and give a direct correlation between the inverter efficiency and weight and the vehicle's fuel economy. Two types of HEVs are considered. One is the 2004 Toyota Prius HEV, and the other is a plug-in HEV (PHEV), whose powertrain architecture is the same as that of the 2004 Toyota Prius HEV. The vehicle-level benefits from the introduction of SiC devices are demonstrated by simulations. Not only the power loss in the motor controller but also those in other components in the vehicle powertrain are reduced. As a result, the system efficiency is improved, and vehicles that incorporate SiC power electronics are predicted to consume less energy and have lower emissions and improved system compactness with a simplified thermal management system. For the PHEV, the benefits are even more distinct; in particular, the size of the battery bank can be reduced for optimum design. [ABSTRACT FROM PUBLISHER]

This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n - 1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation. [ABSTRACT FROM AUTHOR]

This article presents a systematic power stage design approach for a high-power density air-cooled inverter, which involves the utilization of emerging 1.7 kV silicon carbide (SiC) mosfet bare die engineering samples, heatsinks optimized with genetic algorithm, and built using three-dimensional printing technology and integrated power modules with a novel packaging structure. The developed air-cooled inverter assembly is mainly composed of the SiC mosfet phase leg modules with split high-side and low-side switch submodules, which are attached to two separate heatsinks for increased heat dissipation area and reduced thermal resistance. The heatsink is designed using a co-simulation environment with finite element analysis in COMSOL and genetic algorithm in MATLAB. The primary design procedure, including bare die device characterization, loss calculation, thermal evaluation, and power module development, is elaborated. The proposed design approach is verified and validated through experiments at each stage of development. The experimental results show that the inverter California Energy Commission efficiency is 98.4%, and a power density of 75 W/in3 is achieved with a sufficient junction temperature margin for semiconductor long-term reliability. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper. [ABSTRACT FROM AUTHOR]

This paper presents a modular cascaded H-bridge multilevel photovoltaic (PV) inverter for single- or three-phase grid-connected applications. The modular cascaded multilevel topology helps to improve the efficiency and flexibility of PV systems. To realize better utilization of PV modules and maximize the solar energy extraction, a distributed maximum power point tracking control scheme is applied to both single- and three-phase multilevel inverters, which allows independent control of each dc-link voltage. For three-phase grid-connected applications, PV mismatches may introduce unbalanced supplied power, leading to unbalanced grid current. To solve this issue, a control scheme with modulation compensation is also proposed. An experimental three-phase seven-level cascaded H-bridge inverter has been built utilizing nine H-bridge modules (three modules per phase). Each H-bridge module is connected to a 185-W solar panel. Simulation and experimental results are presented to verify the feasibility of the proposed approach. [ABSTRACT FROM PUBLISHER]

A new approach for modulation of an 11-level cascade multilevel inverter using selective harmonic elimination is presented in this paper. The dc sources feeding the multilevel inverter are considered to be varying in time, and the switching angles are adapted to the dc source variation. This method uses genetic algorithms to obtain switching angles offline for different dc source values. Then, artificial neural networks are used to determine the switching angles that correspond to the real-time values of the dc sources for each phase. This implies that each one of the dc sources of this topology can have different values at any time, but the output fundamental voltage will stay constant and the harmonic content will still meet the specifications. The modulating switching angles are updated at each cycle of the output fundamental voltage. This paper gives details on the method in addition to simulation and experimental results. [ABSTRACT FROM PUBLISHER]

This work approximates the selective harmonic elimination problem using artificial neural networks (ANNs) to generate the switching angles in an 11-level full-bridge cascade inverter powered by five varying dc input sources. Each of the five full bridges of the cascade inverter was connected to a separate 195-W solar panel. The angles were chosen such that the fundamental was kept constant and the low-order harmonics were minimized or eliminated. A nondeterministic method is used to solve the system for the angles and to obtain the data set for the ANN training. The method also provides a set of acceptable solutions in the space where solutions do not exist by analytical methods. The trained ANN is a suitable tool that brings a small generalization effect on the angles' precision and is able to perform in real time (50-/60-Hz time window). [ABSTRACT FROM AUTHOR]

This paper presents a reduced switching-frequency active-harmonic-elimination method (RAHEM) to eliminate any number of specific order harmonics of multilevel converters. First, resultant theory is applied to transcendental equations to eliminate low-order harmonics and to determine switching angles for a fundamental frequency-switching scheme. Next, based on the number of harmonics to be eliminated, Newton climbing method is applied to transcendental equations to eliminate high-order harmonics and to determine switching angles for the fundamental frequency-switching scheme. Third, the magnitudes and phases of the residual lower order harmonics are computed, generated, and subtracted from the original voltage waveform to eliminate these low-order harmonics. Compared to the active-harmonic-elimination method (AHEM), which generates square waves to cancel high-order harmonics, RAHEM has lower switching frequency. The simulation results show that the method can effectively eliminate all the specific harmonics, and a low total harmonic distortion (THD) near sine wave is produced. An experimental 11-level H-bridge multilevel converter with a field-programmable gate-array controller is employed to experimentally validate the method. The experimental results show that RAHEM does effectively eliminate any number of specific harmonics, and the output voltage waveform has low switching frequency and low THD. [ABSTRACT FROM AUTHOR]

This paper presents a two-phase cooling method using the R134a refrigerant to dissipate the heat energy (loss) generated by power electronics (PEs), such as those associated with rectifiers, converters, and inverters for a specific application in hybrid-electric vehicles. The cooling method involves submerging PE devices in an R134a bath, which limits the junction temperature of PE devices while conserving weight and volume of the heat sink without sacrificing equipment reliability. First, experimental tests that included an extended soak for more than 850 days were performed on a submerged insulated gate bipolar transistor (IGBT) and gate-controller card to study dielectric characteristics, deterioration effects, and heat-flux capabilities of R134a. Results from these tests illustrate that R134a has high dielectric characteristics and no deterioration of electrical components. Second, experimental tests that included a simultaneous operation with a mock automotive air-conditioner (A/C) system were performed on the same IGBT and gate-controller card. Data extrapolation from these tests determined that a typical automotive A/C system has more than sufficient cooling capacity to cool a typical 30-kW traction inverter. Last, a discussion and simulation of active cooling of the IGBT junction layer with the R134a refrigerant is given. This technique will drastically increase the forward current ratings and reliability of the PE device. [ABSTRACT FROM AUTHOR]

In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SIC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H-SiC DIMOS transistor test device. SPICE parameters are extracted from the measurements, and a SPICE model for the DIMOS transistor has been developed. The presented work is a part of team efforts of material, device, and power electronics researchers at the University of Tennessee and. Oak Ridge National Laboratory. [ABSTRACT FROM AUTHOR]