1. Radial photovoltaic junction with single Si nanowire core–shell structure
- Author
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Ludovic Dupré, Denis Buttard, Pascal Gentile, Amit Solanki, Nicolas Pauc, Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
- Subjects
Materials science ,Silicon ,Scanning electron microscope ,Core-Shell Nanostructures ,Biomedical Engineering ,Nanowire ,chemistry.chemical_element ,Bioengineering ,Nanotechnology ,02 engineering and technology ,Single Silicon Nanowire Core-Shell ,Electrical Characterisation ,01 natural sciences ,Monocrystalline silicon ,0103 physical sciences ,General Materials Science ,Elemental Semiconductors ,P-i-N radial junction ,[PHYS]Physics [physics] ,010302 applied physics ,N-type doped silicon layer ,business.industry ,Silicon Nanowires ,Doping ,Thin silicon layer ,Nanocrystalline silicon ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Solar Cells ,Core (optical fiber) ,Radial Photovoltaic Junction ,chemistry ,P-type silicon nanowire ,Optoelectronics ,Semiconductor Junctions ,Scanning Electron Microscopy ,0210 nano-technology ,business ,Layer (electronics) - Abstract
International audience; A single silicon nanowire core-shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.
- Published
- 2015
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