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Element substitution of BaTiO 3 -based compounds has been demonstrated as a powerful way for designing novel electronic materials (such as polar metals and multiferroics). To trigger magnetism into ferroelectric BaTiO 3 , general substituted elements are magnetic transition metals (such as Mn, Fe, and Co). The doping effect of rare-earth elements (such as Dy) in BaTiO 3 -based compounds was barely investigated. Here, we report the coexistence of magnetism and electric polarization in epitaxial Dy 0.5 Ba 0.5 TiO 3 films. The single-crystalline films were synthesized by high-pressure magnetron sputtering. The crystal and electronic structures were characterized by high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and resonant soft x-ray absorption spectroscopy. Room-temperature electric polarization was demonstrated by optical second-harmonic generation. Temperature-dependent magnetic hysteresis loops were measured to reveal the revolution of magnetism on temperature. Surprisingly, it is uncovered that the Curie temperature of electric-polarized Dy 0.5 Ba 0.5 TiO 3 films is around 100 K, far above the critical temperature of non-polarized DyTiO 3 (near 60 K). Our work provides another view to understand the magnetoelectric materials. [ABSTRACT FROM AUTHOR]

As typical representatives of group III chalcogenides, InSe, α-In2Se3, and β′-In2Se3 have drawn considerable interest in the domain of photoelectrochemistry. However, the microscopic mechanisms of carrier dynamics in these systems remain largely unexplored. In this work, we first reveal that hot electrons in the three systems have different cooling rate stages and long-lived hot electrons, through the utilization of density functional theory calculations and nonadiabatic molecular dynamics simulations. Furthermore, the ferroelectric polarization of α-In2Se3 weakens the nonadiabatic coupling of the nonradioactive recombination, successfully competing with the narrow bandgap and slow dephasing process, and achieving both high optical absorption efficiency and long carrier lifetime. In addition, we demonstrate that the ferroelectric polarization of α-In2Se3 not only enables the formation of the double type-II band alignment in the InSe/α-In2Se3/InSe heterostructure, with the top and bottom InSe sublayers acting as acceptors and donors, respectively, but also eliminates the hindrance of the built-in electric field at the interface, facilitating an ultrafast interlayer carrier transfer in the heterojunction. This work establishes an atomic mechanism of carrier dynamics in InSe, α-In2Se3, and β′-In2Se3 and the regulatory role of the ferroelectric polarization on the charge carrier dynamics, providing a guideline for the design of photoelectronic materials. [ABSTRACT FROM AUTHOR]

This study analyzes the regulatory mechanism of oxygen vacancy concentration on tail-to-tail charged domain walls (T–T CDWs), along with the writing time, conduction current magnitude, and retention performance of through-type T–T CDWs. The research results show that the highest density and length of T–T CDWs are achieved when the oxygen vacancy concentration is 1 × 1020 cm−3. Moreover, the successful writing of through-type T–T CDWs is limited to a certain electric field range, which is controlled by oxygen vacancy concentration. An increase in the oxygen vacancy concentration leads to a decrease in the maximum and minimum threshold electric fields required for writing through-type charged domain walls. The writing time and conductivity of through-type T–T CDWs determine the information writing speed and signal strength of domain wall memories, and the oxygen vacancy concentration also plays a regulatory role in both aspects. When the oxygen vacancy concentration is 1 × 1020 cm−3, the through-type T–T CDW exhibits the fastest writing speed, requiring only 8 ns. The magnitude of the conduction current of through-type T–T CDWs is directly proportional to the oxygen vacancy concentration. The through-type T–T CDWs formed by the aggregation of oxygen vacancies exhibit excellent retention performance, making them highly promising for applications in ferroelectric domain wall memories. Our research demonstrates that oxygen vacancies have a significant regulatory effect on the morphology and current response of charged domain walls, opening up new avenues for the study of domain wall memories. [ABSTRACT FROM AUTHOR]

Bi1−xBaxFeO3 (BBFO, x = 0, 0.03, 0.1) thin films were epitaxially grown on SrRuO3-buffered SrTiO3 (001) substrates by pulsed laser deposition. With increasing Ba content, the BBFO thin films show significantly reduced leakage currents but suppressed ferroelectric polarization. X-ray diffraction reciprocal space mappings and Raman spectra indicate a structural evolution from a rhombohedral-like to tetragonal-like phase in the BBFO thin films. Optical absorption and photoelectron spectroscopy measurements demonstrate a modulation of energy band structures in the BBFO thin films. With A-site Ba acceptor doping, the BBFO thin films exhibit a blue-shift of optical bandgap and an increase in work function. The energy positions of conduction and valence bands of the BBFO thin films have been modulated, and the Fermi level shifts down to the center of the forbidden band, but acceptor-doped BFO thin films still show n-type conduction. The presence of extra oxygen vacancies by acceptor doping is supposed to make contribution to conduction behavior. This study provides a method to manipulate the functional properties and gives insights into the physics of Ba doping in BFO thin films. [ABSTRACT FROM AUTHOR]

The microscopic mechanism of ferroelectric switching is the motion of domain walls, which is actually accomplished by the movement of tiny steps on the domain walls. Using first-principles calculations, the detailed polarization structures and the motion barriers of neutral and charged steps on 180° domain walls of prototypical ferroelectrics PbTiO3 are elaborately revealed in this study. While the Bloch components get weakened near all neutral steps, they become weakened/strengthened near the head-to-head/tail-to-tail charged steps. The neutral step possesses a lower formation energy but a higher migration barrier, indicating that the charged step could move faster. Based on these results, the possible motion picture of steps on one 180° domain wall of tetragonal ferroelectrics is proposed, which provides a better understanding of the mechanism of domain wall motion and may shed light on the future development of domain wall–based functional devices. [ABSTRACT FROM AUTHOR]

A key development toward new electronic devices integrating memory and processing capabilities could be based on the electric control of the spin texture of charge carriers in semiconductors. In that respect, GeTe has been recently recognized as a promising ferroelectric Rashba semiconductor, with giant spin splitting of the band structure, due to the inversion symmetry breaking arising from ferroelectric polarization. Here, we address the temperature dependence of the ferroelectric structure of GeTe thin films grown on Si(111). We demonstrate the hysteretic behavior of the ferroelectric domain density upon heating/cooling cycles by low energy electron microscopy. This behavior is associated with an abnormal evolution of the GeTe lattice parameter as shown by x-ray diffraction. We explain these thermomechanical phenomena by a large difference of thermal expansion coefficients between the film and the substrate and to the pinning of the GeTe/Si interface. The accumulated elastic energy by the GeTe thin film during sample cooling is released by the formation of a -nanodomains with in-plane ferroelectric polarization components. [ABSTRACT FROM AUTHOR]

We investigated leakage current characteristics affected by crystallinity and domain wall currents of epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb-doped SrTiO3 substrates. Highly a-oriented BTFO thin films, highly c-oriented BTFO thin films, and BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were prepared by controlling the substrate temperature and the pulsed laser deposition deposition rate. Highly c-oriented BTFO thin films exhibited the best leakage current characteristics because the Bi2O2 layers were placed perpendicular to the c-axis to reduce leakage currents. The BTFO thin films with a mixture of a-oriented and c-oriented crystallinity showed larger leakage currents compared to highly c-oriented BTFO thin films. The current domains of the BTFO thin films corresponding to the ferroelectric domain structures were observed by a conducting atomic force microscope, and it was observed that leakage currents were formed around the domain walls. In particular, the largest leakage currents are formed at the boundaries of c-oriented domains and a-oriented domains, and these domain boundaries confirmed that the BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were responsible for the largest leakage currents. [ABSTRACT FROM AUTHOR]

The photovoltaic signal is an important characteristic of photodetectors, including but not limited to those that are based on p–n or p–i–n photodiodes. In an open-circuit configuration, pulsed excitation of the detector with ultrafast (femto or nanosecond) pulses leads to a photovoltaic signal that decays slowly (micro-second time scale). If the physics in the detector is dominated by the recombination of the photo-excited charge carriers, one expects the signal to decay without changing its sign. However, some experiments using short-pulse excitation have found that photovoltaic signals can undergo a sign change as a function of time following excitation, with positive signals immediately following the excitation, turning to negative signals several microseconds later. Here, we study various physical effects (density, temperature, electrostriction, pressure, photostriction, and bandgap renormalization) and determine their effect on photovoltaic signals. If, following ultrafast excitation, the carrier density and temperature are increased, and during relaxation the system reaches a state sufficiently close to the quasi-thermal equilibrium in which the carrier density is still elevated, but smaller than the intrinsic thermal equilibrium density at the elevated temperature, then the signal can become negative. [ABSTRACT FROM AUTHOR]

The demand for reliable memory devices capable of operating in harsh environments, such as space and vehicles, necessitates the development of high-temperature-resistant technologies. In this study, we propose a novel ferroelectric domain wall (DW) memory utilizing BiFeO3 thin films, which exhibit exceptional retention and fatigue properties at 135 °C. Achieving this performance was made possible through precise control of the oxygen vacancy density in the epitaxial thin films induced by a post-annealing procedure conducted under an appropriate oxygen pressure of 10 Pa. Initially, prototype nano-memory devices lacking post-annealing treatment demonstrated resistive switching behavior at room temperature, with a current rectification ratio of 100:1, achieved by manipulating the uncompensated DW induced by polarization switching. With the additional annealing procedure in lower oxygen pressure, the wall current magnitude of the devices increased significantly, indicating the critical role of the oxygen vacancies in modulating the DW conductivity. Moreover, the nanodevices exhibited improved polarization retention due to oxygen vacancy-mediated charge injection that can be further enhanced at the elevated temperature. The electrons trapped deeply at the artificial DW were found to stabilize the switched polarization at the expense of reduced DW conductivity, emphasizing the importance of precise control over oxygen vacancy density for achieving a balance between high DW conductivity and excellent polarization retention. [ABSTRACT FROM AUTHOR]

Developing dyes with high open-circuit photovoltage (Voc) is a vital strategy to improve the power conversion efficiency (PCE) of co-sensitized solar cells (co-DSSCs). Herein, three organic fluorine-containing dyes [YY-ThP(3F), YY-ThP(2F), and YY-ThP(26F)] are designed and synthesized for investigating the fluorine-induced effect on photophysical and photovoltaic performances. Consequently, this effect can significantly broaden the UV–vis absorption spectra of dyes but fail to improve the light-harvesting capability of DSSCs. Strikingly, YY-ThP(3F), featuring 3-position fluorine substitution to cyanoacrylic acid, yields a relatively high Voc compared to the corresponding fluorine-free dye (YY-ThP). Furthermore, the co-sensitization of YY-ThP+YY-ThP(3F) achieves a remarkably high PCE and long-term stability. This work implies that the combination of judicious molecular engineering and co-sensitization is a promising strategy for highly efficient and stable DSSCs. [ABSTRACT FROM AUTHOR]

This paper reports that the in situ growth magnetic field (Hg) during magnetic-phase CoFeB deposition impacts the electric-field control of magnetic anisotropy in Co40Fe40B20/(011)-Pb(Mg1/3Nb2/3)0.7Ti0.3O3 [CoFeB/(011)-PMN-PT] composite multiferroic heterostructures at room temperature. In the Hg1 mode (in situ Hg along the [ 01 1 ¯ ] direction of the ferroelectric PMN-PT substrate), the electric-field-controlled modulation ratios of the magnetic coercivity HC and saturation magnetic field HS are approximately −47% and +156%, respectively. However, in the Hg2 mode (in situ Hg along the [100] direction of the ferroelectric PMN-PT substrate) of the CoFeB/(011)-PMN-PT multiferroic heterostructure, the electric-field-controlled modulation ratios of the magnetic coercivity HC and saturation magnetic field HS can reach as high as +162% and +393%, respectively. Moreover, the electric-field-controlled magnetic coercive field HC exhibits a butterfly shape when plotted versus the applied electric fields in both modes, which matches the in-plane butterfly strain loop of the ferroelectric PMN-PT substrate. However, the electric-field-controlled saturation magnetic field HS presents a square loop, which is very consistent with the ferroelectric loop of the PMN-PT substrate. This result may be ascribed to the distinct pathway of the ferroelastic domain switching in the (011)-oriented PMN-PT substrate. This study provides a new idea for the design of spintronic devices based on multiferroic heterostructures. [ABSTRACT FROM AUTHOR]

Ferroelectric oxides have gained research attention in the field of ferroelectric photovoltaics (PV) after the discovery of power conversion efficiency exceeding the Shockley–Queisser limit in BaTiO3 (BTO) crystals. However, advancement in this field is hindered by the wide bandgap (>3 eV) nature of ferroelectric oxides. In this work, a novel lead-free ferroelectric (1 − x)BTO − xBi(Ni2/3Nb1/3)O3 system was proposed and demonstrated to show bandgap reduction without compromising the polarization. Notably, the system displayed a bandgap reduction from 3.1 to 2.4 eV upon varying the composition from x = 0.0 to 0.05. Particularly, the optimal composition x = 0.02 showed enhancement in polarization (Pmax = 16 μC/cm2) and anomalous PV response with an open-circuit voltage of 6 V at 300 K. The origin of the bandgap reduction and polarization retention is explored experimentally by Raman spectroscopic measurements and analyzed theoretically by density functional theory. Our results revealed that the oxygen octahedral distortions and Ni2+ doping favor bandgap lowering, and Bi3+ ions stabilize the ferroelectric polarization. This study provides insight into the origin of bandgap tuning and paves the route for exploring new low-bandgap ferroelectric material with room temperature polarization. [ABSTRACT FROM AUTHOR]

For ferroelectric (FE) thin films, working in the harsh environment of a high electric field (E) or high temperature (T) remains a great challenge. As a post-treatment approach, dead-layer engineering exhibits a certain generality and could improve the dielectric strength (Eb) via depositing a specially designed artificial "dead-layer" on most of the as-prepared FE thin films. However, physical essence of the artificial dead-layer needs further analysis. Great challenges are the abundant and complicated conduction mechanisms in the FE-based thin films and the lack of adequate research on modulating these conduction mechanisms by this artificial dead-layer. As a vital part of the conduction mechanisms, electron injection can be easily triggered under E and thermal excitation that almost appeared in all FE-based thin films. Here, the ultrathin artificial dead-layer of Ca0.2Zr0.8O1.8 (CSZ) was used to restrain multiple electron injection in low-Eb LaNiO3/Ba0.58Sr0.42TiO3 (LNO/BST) FE thin films, including thermal emission and tunneling effect, under a high E and T, even under an opposite E. It was found that the suppressing effect on the multiple electron-injection mechanisms via the artificial dead-layer mainly comes from its wall-like energy-barrier structure, which is composed of two opposite and high interface energy barriers (BST/CSZ: 2.95 eV, CSZ/Au: 3.92 eV) and a wide depletion layer. The generality of protecting the ferroelectric thin films from electron injection via the artificial dead-layer was discussed. [ABSTRACT FROM AUTHOR]

In this work, SnO2 thin films are deposited by drop–dry deposition (DDD), which is a simple, low-cost chemical technique for thin film deposition. The deposition solution contains Na2SnO3 as the Sn source, and is highly stable without spontaneous reactions in the solution. The solution is dropped on a substrate heated to 60°C on a heater plate. According to Auger electron spectroscopy, the deposit will be stoichiometric SnO2. The film is n-type and transparent in the visible range. The pn heterostructure is fabricated by depositing SnO2 on p-type NiO. The NiO film is also fabricated by DDD. Ni(OH)2 is deposited using a solution containing Ni(NO3)2 and NaOH, and then is converted to NiO by annealing at 400°C. The SnO2/NiO structure is transparent in the visible range and shows clear rectification properties and photovoltaic effects. Thus, a transparent solar cell is successfully fabricated by DDD. [ABSTRACT FROM AUTHOR]

For cardiopathy patients with an implanted cardiac pacemaker, supplying power to the pacemaker is a challenging problem. In this study, we aim to design a transcutaneous optical energy transmission system that transmits optical energy from an optical-energy-generating circuit to a receiving circuit in a human body through the skin to charge the pacemaker's battery such that the battery supplies power to the pacemaker continuously. We use 0.5-mm-thick pigskin to imitate human skin tissue. The light source of the system is a halogen lamp and the receiver is a solar cell. The beam emitted by a the halogen lamp is transmitted to the solar cell through the skin generating a photovoltaic effect so as to charge the rechargeable button battery. As optical energy is received by a four-solar-cell module, we adopt a Zener voltage regulation circuit and a pure resistance circuit to charge the battery. Experimental data show that if a four-solar-cell module is used to charge a battery with the voltage regulation circuit, the battery after 62 h of charging stores enough power to operate the pacemaker for 20--35 days. On the other hand, charging the battery using the pure resistor circuit can reduce the charging time from 62 h to 14 h for the same number of operation days. If the number of solar cells in parallel is increased to 12, the charging time for the same number of operation days can be shortened from 14 h to 12 h with the pure resistance circuit. As a result, transcutaneous remote charging is achieved. Approaches to shorten the charging time and future works are proposed as well. [ABSTRACT FROM AUTHOR]

Polarization‐sensitive photodetection has intensive practical applications, including optical anti‐counterfeiting, image encryption, and remote sensing. 2D hybrid perovskites have emerged as a robust candidate in this portfolio, due to their inherent quantum‐confined structure and anisotropic properties. However, studies on the chemical assembly of inorganic‐layer thickness to regulate structural anisotropy and polarization‐sensitive photodetection behavior remain insufficient. Here, the inorganic‐layer thickness of 2D homologous perovskites is regulated, (MBA)2(CH3NH3)n−1PbnI3n+1 (n = 1–3, where MBA = 4‐methylbenzylamine), featuring the similar polar structures and strong optical anisotropy. Notably, photoelectric merits are greatly improved from n = 1 to n = 3 with the weakening of the quantum confinement effect. Under illumination, the n = 3 member exhibits large on/off ratios of photocurrent (≈2.1 × 104) far beyond other lower‐layered counterparts. The polarized‐light photodetector based on n = 3 crystal shows intriguing behaviors, including noticeable responsivity (1.2 mA W−1), detectivity (9.5 × 1013 Jones), and superior photocurrent anisotropy (≈110.4). Besides, fascinating self‐powered polarization behaviors with a large anisotropy contrast are achieved based on the bulk photovoltaic effect, stemming from the structural polarity. These characteristics underscore the design strategy of inorganic‐layer regulation in advancing the exploration of new 2D perovskite candidates for polarization‐based optoelectronics. [ABSTRACT FROM AUTHOR]

Magnetic field is used to explore the mechanism of ferroelectric-dynamic coupling in the photovoltaic effect, where the spin–orbit coupling gives rise to and the expansion of relaxation times for electron–hole pair recombination. Thus, phonons with spin-1 and spin-1/2 electrons can be regulated by the magnetic field, which contributes to ferroelectric photovoltaics. The ballistic photocurrents originate from the asymmetric scattering of spin carriers by multiferroics, where significant photocurrent and magneto-spectrum responses are observed in Bi 6- x Pr x Ti 3 Fe 2 O 18 (x = 0.0, 0.3, 0.6, 0.9, 1.2) multiferroics. The magnetic field-dependent photoelectric spectra and J - V curves under illumination have validated the prolonged relaxation lifetime and improvement of density of electron–hole pairs. The evolution of multiferroic orders and magnetic field-dependent photovoltaic response spectra correlate to the ratio of phase B 2 cb / F 2 mm. These results reveal the distinct advantages of multiferroics, which are expected to be an ideal platform to improve efficiency and further clarify the ferroelectric photovoltaic mechanism. • The observation of ballistic photocurrents in multiferroics. • The expansion of relaxation lifetime and generation of electron–hole pairs. • The perspective of ferroelectric photovoltaic mechanism from spatial-temporal symmetry broken. [ABSTRACT FROM AUTHOR]

The photovoltaic effect can occur without metal/semiconductor or semiconductor/semiconductor interfaces in materials with spontaneous electric polarization due to a lack of spatial inversion symmetry. This anomalous phenomenon is known as the bulk photovoltaic (BPV) effect owing to the shift current, which facilitates photoelectric conversion. Alpha-phase indium selenide (α-In2Se3) is a ferroelectric semiconductor with spontaneous electric polarization. Here, we report an experimental demonstration of the BPV effect in α-In2Se3 films along the out-of-plane direction by utilizing graphite films as transparent electrodes. A short-circuit current was detected under white light irradiation, and the sign was inverted upon inverting the direction of electric polarization, thus suggesting its origin to be the shift current, distinct from the effect occurring at the interface. The trend of BPV performances owing to the shift current with respect to the irradiated photon energy is consistent with the dependence of its absorption coefficient. The quantum efficiency of photoelectric conversion for α-In2Se3 along the out-of-plane direction was a few orders of magnitude greater than that of conventional and layered ferroelectric materials and was comparable to that of low-dimensional interface structures and strained two-dimensional materials. Our results pave the way for the innovative design of photoelectric conversion devices. [ABSTRACT FROM AUTHOR]

As the significance and complexity of solar panel performance, particularly at their maximum power point (MPP), continue to grow, there is a demand for improved monitoring systems. The presence of variable weather conditions in Maroua, including potential partial shadowing caused by cloud cover or urban buildings, poses challenges to the efficiency of solar systems. This study introduces a new approach to tracking the Global Maximum Power Point (GMPP) in photovoltaic systems within the context of solar research conducted in Cameroon. The system utilizes Genetic Algorithm (GA) and Backstepping Controller (BSC) methodologies. The Backstepping Controller (BSC) dynamically adjusts the duty cycle of the Single Ended Primary Inductor Converter (SEPIC) to align with the reference voltage of the Genetic Algorithm (GA) in Maroua's dynamic environment. This environment, characterized by intermittent sunlight and the impact of local factors and urban shadowing, affects the production of energy. The Genetic Algorithm is employed to enhance the efficiency of BSC gains in Maroua's solar environment. This optimization technique expedites the tracking process and minimizes oscillations in the GMPP. The adaptability of the learning algorithm to specific conditions improves energy generation, even in the challenging environment of Maroua. This study introduces a novel approach to enhance the efficiency of photovoltaic systems in Maroua, Cameroon, by tailoring them to the specific solar dynamics of the region. In terms of performance, our approach surpasses the INC-BSC, P&O-BSC, GA-BSC, and PSO-BSC methodologies. In practice, the stabilization period following shadowing typically requires fewer than three iterations. Additionally, our Maximum Power Point Tracking (MPPT) technology is based on the Global Maximum Power Point (GMPP) methodology, contrasting with alternative technologies that prioritize the Local Maximum Power Point (LMPP). This differentiation is particularly relevant in areas with partial shading, such as Maroua, where the use of LMPP-based technologies can result in power losses. The proposed method demonstrates significant performance by achieving a minimum 33% reduction in power losses. [ABSTRACT FROM AUTHOR]

Light‐induced electron dynamics in monolayer hexagonal boron nitride is theoretically investigated under the influence of two‐color linearly‐polarized laser fields at frequencies ω and 2ω, by solving the time‐dependent Schrödinger equation with a tight‐binding model. In the weak field regime, it is confirm that the injection of ballistic current arises from the breakdown of time‐reversal symmetry. This phenomenon is attributed to quantum interference between two distinct excitation paths: a one‐photon (2ℏω) absorption path and a two‐photon (ℏω) absorption path. In a strong field regime, the analysis reveals that the two‐color laser fields may generate a substantial population imbalance within momentum space, consequently facilitating the injection of ballistic current even in a deeply off‐resonant regime. The findings demonstrate that a pronounced population imbalance exceeding 30% of excited electrons can be realized without relying on the ellipticity of the fields. This highlights the potential of linearly polarized light for efficient photovoltaic effects and valley population control in 2D systems and heterostructures. [ABSTRACT FROM AUTHOR]

Temperature increases in photovoltaic (PV) panels are one of the primary issues preventing PV systems from being used extensively. When a photovoltaic module overheats, its output power performance drops by 0.4%–0.5% for every degree Celsius above its rated temperature. Lowering the operating temperature of the PV surface using a cooling medium is an efficient technique to increase electrical performance and decrease the rate of thermal degradation of a PV module. To prevent this performance loss, researchers have worked on cooling photovoltaic panels with fluids such as air, water, and nanofluids. In this study, the effects of cooling on photovoltaic panels with water and nanofluid were investigated. The experiment was carried out by fixing the pipe and fins to the back surface of the panel. Al2O3‐water and TiO2‐water nanofluids were used as working fluid due to their cost effectiveness. Nanofluids prepared in three different volumetric fractions (0.01%, 0.1%, and 1%), the current and voltage values obtained from the panels were recorded, and the panel efficiency was calculated. The experimental results showed that the cooling increased the panel voltage and decreased the current. The results indicated that using TiO2 nanofluid was more effective than Al2O3 nanofluid in terms of electrical efficiency. It was also found that the fluids prepared as 0.01% and 1% gave the most efficient results. It has been observed that it is possible to increase the panel efficiency by 8.32% by cooling the panel. [ABSTRACT FROM AUTHOR]

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2. [ABSTRACT FROM AUTHOR]

In order to solve the problem of variable steady-state operation nodes and poor coordination control effect in photovoltaic energy storage plants, the coordination control strategy of photovoltaic energy storage plants based on ADP is studied. Establish the photovoltaic energy storage power station model including photovoltaic system model, super capacitor system model and battery system model; Set the maximum limit of active power change as the power constraint condition for coordinated control of photovoltaic energy storage station; The optimal control problem of multi voltage and reactive power resource coordination is fully considered, the optimal voltage control model is established by using ADP algorithm, and the optimal coordinated control strategy is obtained by online learning the collected dynamic operation information. The experimental results show that this strategy can improve the coordinated control effect of the photovoltaic energy storage station, ensure the photovoltaic energy storage station in a stable operation state, improve the service life of the energy storage device in the photovoltaic energy storage station, and stabilize the steady-state operating node voltage within the ideal fluctuation range. [ABSTRACT FROM AUTHOR]

Most of the applied research on BiFeO3 (BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3 (LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O2 4:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150 μ C cm−2). The leakage current density is as low as 10–2 A cm−2 at 100 kV cm−1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies. [ABSTRACT FROM AUTHOR]

The metastable nature of the ferroelectric phase of HfO2 is a significant impediment to its industrial application as a functional ferroelectric material. In fact, no polar phases exist in the bulk phase diagram of HfO2, which shows a dominant non-polar monoclinic ground state. As a consequence, ferroelectric orthorhombic HfO2 is stabilized either kinetically or via epitaxial strain. Here, we propose an alternative approach, demonstrating the feasibility of thermodynamically stabilizing polar HfO2 in superlattices with other simple oxides. Using the composition and stacking direction of the superlattice as design parameters, we obtain heterostructures that can be fully polar, fully antipolar or mixed, with improved thermodynamic stability compared to the orthorhombic polar HfO2 in bulk form. Our results suggest that combining HfO2 with an oxide that does not have a monoclinic ground state generally drives the superlattice away from this non-polar phase, favoring the stability of the ferroelectric structures that minimize the elastic and electrostatic penalties. As such, these diverse and tunable superlattices hold promise for various applications in thin-film ferroelectric devices [ABSTRACT FROM AUTHOR]

The anomalous photovoltaic effect inherent in ferroelectric materials brings promising opportunities for self-powered photoelectric detectors. However, the photoelectric detection performances in photoferroelectrics are limited by the low photocurrent output due to the recombination and low separation ability of photogenerated carriers. This work proposes a heterogeneous integration technology for self-powered photoelectric detectors by designing a P-type/N-type/P-type (PNP) ferroelectric junction with sandwich structure, in which not only the photogenerated carrier separation is strengthened due to the enhanced polarization derived from the interface compressive stress, but also the carrier recombination is suppressed by the built-in electric field in the depletion layer. Thus, the photocurrent output in the PNP heterojunction is increased by more than seven times at 0 V bias compared with N-type ferroelectric film and exhibits excellent responsivity and detectivity. The temperature stability for repeatable time-resolved self-powered photocurrent demonstrates applicability in high temperature environments. This work provides a feasible strategy for high-performance self-powered photoelectric detectors by heterogeneous integration in photoferroelectrics, promoting ferroelectric photonic applications. [ABSTRACT FROM AUTHOR]

The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials. The bulk photovoltaic effect holds promise for various optoelectronic applications, but it is usually restricted to non-centrosymmetric materials operating in the visible range. Here, the authors report a surface photogalvanic effect spanning from visible to midinfrared wavelengths in a centrosymmetric topological insulator, Ag2Te. [ABSTRACT FROM AUTHOR]

A high‐responsivity photo‐field‐effect transistor (photo‐FET) with a metal‐oxide‐semiconductor (MOS) structure is a promising technology for low‐intensity light detection with its high gain and low operation voltage. To enhance their responsivity, the equivalent oxide thickness (EOT) scaling is one of the effective solutions, which is a common technology to improve the electrical properties of MOSFETs using higher‐k insulators. Herein, the EOT scaling effect on the optoelectrical characteristics of photo‐FETs using Al2O3 and Al2O3/HfO2 gate stacks is investigated. Thanks to the EOT scaling effect introducing Al2O3/HfO2, only the transconductance of the photo‐FET is enhanced without any significant change in the photovoltaic effect and cavity effect. As a result, its responsivity is improved by up to 1.7 times. The results give a basic strategy of the EOT scaling effect for photo‐FETs; thus, the EOT scaling with a higher‐k insulator is a powerful solution for the high‐performance InGaAs photo‐FET requiring high responsivity in the short‐wavelength infrared range. [ABSTRACT FROM AUTHOR]

Emerging tribovoltaic nanogenerator (TVNG) technology, which can capture mechanical energy at dynamic semiconductor interfaces and generate instant direct current (DC) outputs, is considered promising to mitigate growing energy demand. However, the unsatisfactory charge excitation and extraction efficiency limit its electrical output stability and even practicability. Here, a novel strategy is proposed to synergistically modulate charge generation and transfer dynamics by integrating ferroelectric and photovoltaic effect with tribovoltaic effect, and thus a multi‐effect coupled Schottky TVNGs is, for the first time, developed. Research indicates that such coupling mechanism involving ferroelectric polarization, photoexcitation, and triboelectricity can allow TVNGs to jointly collect light and mechanical energy to excite more charges, and meanwhile, incorporation of strong electric fields can also be induced by controlled polarization to assist Schottky junction in modulating separation/extraction efficiencies of these charges. Ultimately, this multi‐effect coupled devices deliver impressive DC output of 7.3 V and 69.8 µA, outperforming similar coupled Schottky junction TVNGs. Besides that, its feasibility for multifunctional sensing and photodetection is also demonstrated. This study proposes an effective strategy for modulating performance while extending its functionality, which can expedite the development and potential application of advanced TVNGs. [ABSTRACT FROM AUTHOR]

In this paper, the effect of p–n heterostructures on the electro‐optical and heat regulation performances of polymer dispersed liquid crystal (PDLC) dimming films are studied. In detail, the WO3, Ag2O, and WO3/Ag2O p–n heterostructures are successfully synthesized via the co‐precipitation method. The products are analyzed by XRD, SEM, TEM, and XPS and the results demonstrated that the WO3 nanorods successfully grew on the surface of Ag2O. Compared to the primitive sample, the incorporation of p–n heterostructures into the composite films significantly enhances the electro‐optical properties. For a 20µm‐thick film, the saturation voltage (Vsat) decreases by 38.7% from 24.8 to 15.2 V, and the threshold voltage (Vth) is reduced by 22.9% from 12.7 to 9.8 V, while the contrast ratio reaches 132. Due to the molecular structure of the polymer monomers and the micro‐network structure of the film, the film exhibits high emissivity in the mid infrared spectrum, enabling enhanced dynamic cooling management through radiative cooling around the clock. Matrix & laboratory (MATLAB) calculations show that the maximum cooling power during the day and night reached 97.63 and 136.24W m‐2 K‐1, respectively. This research has great significance for the development of highly energy‐efficient smart windows. [ABSTRACT FROM AUTHOR]

The bulk photovoltaic effect (BPVE) in ferroelectrics, wherein spontaneous polarization can be reversed within crystals lacking centrosymmetry, encompasses the significant contribution of ferroelectric domain walls (DWs), known as DW‐PVE. Nevertheless, the separation between intrinsic BPVE within the domain and DW‐PVE remains unexplored in 2D ferroelectrics, notwithstanding its significant importance. In this study, sizable crystals of 2D ferroelectric SnS are successfully grown, facilitating a comprehensive yet intricate examination of domain configurations utilizing polarized optical microscopy and piezoresponse force microscopy. By properly selecting the large ferroelectric single domain within SnS crystals, uniform intrinsic BPVE across the domain is unequivocally demonstrated. Furthermore, to further enhance intrinsic BPVE, manipulation of strain poling increased photocurrent, suggesting that locally distributed polarizations due to imperfection introduced in SnS crystals are aligned by strain. These results will offer a new avenue for rigorous comprehension of DW‐PVE in 2D ferroelectrics. [ABSTRACT FROM AUTHOR]

A novel quasi 1–2 type magnetoelectric (ME) nanocomposite films composted of one‐dimensional CoFe2O4 nanofibers and two‐dimensional PbZr0.2Ti0.8O3 films on flexible mica substrate have been designed and fabricated. The ME coupling effects have been greatly enhanced due to the release of the clamping effect and the high strain transfer efficiency between the large aspect ratio of the nanofibers and ferroelectric thin films. The release of the clamping effect was confirmed by reducing the thickness of the mica substrate, in which the piezoelectric coefficient and ME coupling coefficient of the nanocomposite films have been greatly boosted by the decrease in the mica thickness. A large direct ME coupling coefficient of 630 mV/(cm Oe) and a converse ME coupling coefficient of 1.43 × 10−8 s/m have been achieved in the quasi 1–2 nanocomposite film with a substrate thickness of 25 µm. Furthermore, the stain‐mediated ME coupling was revealed by magnetic field/electric field‐induced local ferroelectric/magnetic domain switching dynamics. [ABSTRACT FROM AUTHOR]

Integrating renewable energy sources and distributed energy resources (DERs) in the Malaysian low voltage distribution network has introduced voltage stability challenges, particularly voltage rises, leading to detrimental impacts on network performance. This paper presents a novel reactive power control strategy for addressing these challenges. Unlike conventional methods with fixed reactive power references, the proposed technique dynamically adjusts the reactive power reference in real time, considering voltage and active power injection. It calculates the rate of change in reactive power reference (ΔQ) per second by analyzing Volt-VAR and Watt-VAR components and updates the reference accordingly. Simulations conducted on a low voltage distribution network in Taman Impian Putra, Malaysia, showcase the adverse effects of high photovoltaic (PV) penetration on voltage stability and highlight the success of the proposed strategy in mitigating voltage rise. The technique effectively reduces average voltage, maintains voltage regulation during high sun irradiance and low load demand periods, and surpasses the adaptability of existing methods dependent on PV active injection or network voltage alone. The proposed strategy ensures accurate control and efficiently addresses dynamic network changes by accounting for both PV active power injection and network voltage. This approach offers enhanced voltage regulation, adaptability to varying network conditions, and reduced losses, making it a promising solution for mitigating voltage rise in the Malaysian low voltage distribution network. The simulations, validated using MATLAB Simulation and OpenDSS, confirm the strategy’s efficacy and potential for real-world implementation. [ABSTRACT FROM AUTHOR]

Building-integrated photovoltaics (BIPV) comprise the integration of a solar power generation system into the exterior design and architectural elements of a building to produce electricity, which allows the building itself to generate electricity. By integrating shingled technology into the photovoltaic module with optimization of the optical effect, the output performance of the module can be increased while securing an aesthetic appeal as an architectural exterior material for the building simultaneously. In this research, we studied enhancing the performance of BIPV modules through an analysis of the optical coupling effect for shingled technology using PSpice simulation. Compared to the efficiency of 0.2 cm string spacing, the optical coupling effect was increased by 33.33%, 46.98%, 67.01%, and 193.49% according to the string spacing of 0.5 cm, 1 cm, 2 cm and 4 cm, respectively. To analyze this increase, we focused on studying the increase in current due to the reflection and re-absorption of light in the back layer of the solar cell as the cause of this output enhancement. Additionally, the coupling effect in accord with different layers showed that using white EVA to reflect the incident light from the top layer resulted in 117.14% and 521.90% enhancements in maximum output power (Pm) loss % compared to the conventional and black backsheet applied PV modules, respectively. [ABSTRACT FROM AUTHOR]

We provide a comprehensive analysis of the effect of spectral albedo on photovoltaic (PV) module measurements and system model predictions. We demonstrate how to account for albedo in indoor bifacial device measurements by adjusting the applied irradiance using the scaled rear irradiance method, exemplified on fabricated silicon heterojunction (SHJ) modules. System model performance is studied using a detailed 3D finite‐element model, DUET, for fixed‐tilt and horizontal single‐axis tracked (SAT) arrays between 15 and 75°N. Spectral effects cause variations in measured SHJ module short‐circuit current up to 2% and efficiency variation up to 0.3% abs. We further demonstrate that rear‐side spectral mismatch factors (SMMs) resulting from including or omitting spectral albedo in PV system modeling vary between ±13%, while total (front+rear) SMMs vary up to 3%, depending on the deployment configuration and latitude. SAT array SMMs are weakly correlated with latitude, while fixed‐tilt array SMMs increase with latitude, driven by an increasing proportion of ground‐reflected light on the front‐side of modules. Ground‐reflections can constitute between 2% and 32% of total incident module irradiance, with notably high (>10%) contributions for fixed‐tilt arrays at high latitude. Effects of spectral albedo are most significant for: (1) fixed‐tilt deployments at high latitudes, (2) wide bandgap technologies such as perovskite and cadmium telluride cells, (3) albedos which vary steeply over the technology's absorption range, and (4) high albedo ground covers. Overall, we demonstrate that omitting spectral albedo effects can result in PV measurement and system‐level modeling uncertainties on the order of several percent in these cases. [ABSTRACT FROM AUTHOR]

This study was carried out in a building located in Antalya in order to determine the optimum combinations of different levels of improvement and PV panel use in existing buildings in terms of energy saving and LCC. Within the framework of TS 825 Thermal Insulation Rules in Buildings, which is the national standard in Turkey, three different levels of insulation in walls, roofs, floors and windows and three different numbers of PV panels for energy production were determined. 18 different alternatives obtained using the orthogonal array for five factors with three levels analyzed have been made. In terms of energy savings, the scenario with the highest levels of insulation for walls, roofs, floors and windows and the use of 12 PV panels is the optimum combination that produces all of its energy needs and switches to surplus energy with +KW after consumption. In terms of LCC, the alternative with 12 PV panels, where wall, floor and windows are the highest and the roof is insulated at level 2, is the best combination. PV panel integration was found to be the most effective parameter in terms of energy savings and LCC. [ABSTRACT FROM AUTHOR]

Herein, a prototype nonvolatile bent ferroelastic domain wall (DW) memory based on extension–retraction of DWs in a top electrode/bent ferroelastic DWs/bottom electrode architecture is demonstrated and the effects of mechanical condition, electrical condition, and the material parameter on ferroelastic DWs in PbTiO3 ferroelectric thin films are studied by phase field modeling. Misfit strain can be used to drive the bend of DWs in PbTiO3 thin film, resulting in a change of ferroelastic domain size, bending degree, and conductivity. Stable and reversible switching of DWs between the extendible state with high conductivity and the retractile state with low conductivity can be realized, resulting in an apparent resistance change with a large ON/OFF ratio of >102 and an excellent retention characteristic. The extension and retraction speed, corresponding to data writing speed, can be adjusted by the electric field magnitude and distributions. The memory speed increases by 5% under a homogeneous electric field and 6% under an inhomogeneous probing electric field, after the buildup of space charges in a ferroelectric thin film, and the fastest memory speed is obtained at tip potential φ = 1.8. Moreover, polarization orientations of a and c domains separated by bent ferroelastic DWs do not affect memory performance. This paper can guide the development of new ferroelectric domain wall memory. [ABSTRACT FROM AUTHOR]

The non-destructive estimation of doping concentrations in semiconductor devices is of paramount importance for many applications ranging from crystal growth to defect and inhomogeneity detection. A number of technologies (such as LBIC, EBIC and LPS) have been developed which allow the detection of doping variations via photovoltaic effects. The idea is to illuminate the sample at several positions and detect the resulting voltage drop or current at the contacts. We model a general class of such photovoltaic technologies by ill-posed global and local inverse problems based on a drift-diffusion system which describes charge transport in a self-consistent electrical field. The doping profile is included as a parametric field. To numerically solve a physically relevant local inverse problem, we present three approaches, based on least squares, multilayer perceptrons, and residual neural networks. Our data-driven methods reconstruct the doping profile for a given spatially varying voltage signal induced by a laser scan along the sample’s surface. The methods are trained on synthetic data sets which are generated by finite volume solutions of the forward problem. While the linear least square method yields an average absolute error around 10%, the nonlinear networks roughly halve this error to 5%. [ABSTRACT FROM AUTHOR]

Thin-film ferroelectric doped hafnia has emerged as a promising candidate for non-volatile computer memory devices due to its CMOS compatibility. The ferroelectricity in thin-film HfO2 is defined by the polar orthorhombic phase, whose stabilization depends on various parameters, such as doping species, stress, thickness, crystallization annealing temperature, etc. The concentration of oxygen vacancies is yet another parameter affecting the stabilization of the ferroelectric phase in HfO2 thin films. Here, we report on the effect of oxygen vacancies introduced in Y-doped HfO2 (HYO) films during reactive pulsed laser deposition on their ferroelectric properties, which we systematically study by correlating structural and electrical properties. Among different techniques, near-edge x-ray absorption fine structure analysis is successfully employed to distinguish between structurally similar ferroelectric orthorhombic and paraelectric tetragonal phases. It is shown that oxygen vacancies introduced at a certain concentration in HYO films can be used as a tool to control the phase composition as well as to decrease the formation energy (crystallization temperature) of the ferroelectric phase. Based on these results, we demonstrate a back-end-of-line compatible ferroelectric HYO capacitor device with competitive functional properties. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Bionic visual systems require multimodal integration of eye‐like photodetectors and brain‐like image memory. However, the integration of photodetectors (PDs) and artificial optoelectronic synapses devices (OESDs) by one device remains a giant challenge due to their photoresponse discrepancy. Herein, a dual‐functional integration of PDs and OESDs based on VO2/WO3 heterojunctions is presented. The device can be able to realize a dual‐mode conversion between PDs and OESDs through tuning the bias voltage. Under zero bias voltage, the device exhibiting excellent photodetecting behaviors based on the photovoltaic effect, showing a high self‐powered photoresponsivity of 18.5 mA W−1 and high detectivity of 7.5 × 1010 Jones with fast photoresponse. When the external bias voltages are applied, it can be acted as an OESD and exhibit versatile electrical and photonic synaptic characteristics based on the trapping and detrapping effects, including synaptic plasticity and learning‐experience behaviors. More importantly, benefiting from the excellent photosensing ability and transporting properties, the device shows ultralow‐power consumption of 39.0 pJ and a 4 × 4 OESDs array is developed to realize the visual perception and memory. This work not only supplies a novel route to realize complex functional integration just in one device, but also offers effective strategies for developing neuromorphic visual system. [ABSTRACT FROM AUTHOR]

Bulk photovoltaic effect, i.e. shift current, is a nonlinear second‐order optical response that can rectify an alternating current (AC) electric field into a direct current (DC). Depending on the wavelength of the incident light, shift current finds applications in various fields, including solar energy conversion and radiation detection. Its promising application in energy conversion and information processing has inspired investigations to uncover the relationship between shift current and electronic structures of materials. Despite numerous efforts dedicated to designing principles for strong bulk photovoltaic effect materials, the only widely accepted crucial parameter is the joint density of states (JDOS). In this study, employing effective model analysis and first‐principles calculations, an enhancement effect of bulk photovoltaic effect is found to arise from band hybridization that is typically along with anti‐crossing‐like electronic band structures, similar to the Berry curvature effects in intrinsic anomalous Hall conductivity. While this mechanism does not offer a comprehensive understanding of the relationship between electronic structure and the magnitude of bulk photovoltaic effect, it represents practical progress in the design of materials with strong bulk photovoltaic effect. [ABSTRACT FROM AUTHOR]

Optical positioning through a position-sensitive detector (PSD) is a central technique for diverse applications, including laser guidance, pilotless automobiles, aerospace, real-time tracking, and robotics. However, both commercially segmented PSD and the lateral photovoltaic effect PSD reported so far suffer from serious nonlinearity, leading to distortion of position. Herein, we propose an ultrahigh-precise optical positioning method through a deep learning-assisted thermoelectric model. Specifically, we design a PbSe thermoelectric photodetector with twelve electrodes endowing the output of the photo-thermoelectric voltage matrix, which is highly laser position-correlated. As a result, the original location is accurately reconstructed through a regression-based convolutional neural network algorithm, giving rise to a nonlinearity of 0.3% with precision as high as 98.7%. Finally, our thermoelectric deep optical positioner fully recovers the moving path of a target defined by alphabets, numbers, or random trajectory, indicating its great potential in the applications of optical writing, robot guidance, and optical navigation. [ABSTRACT FROM AUTHOR]

Narrow bandgap 2D layered material platinum selenide (PtSe2) with good environmental stability, high carrier mobility, and high light absorption, has been widely investigated for uncooled midwave‐infrared (MWIR) photodetection. However, the phototransistor based on the PtSe2 operation at room temperature suffered from the high dark current and background noise. Here, a graphene (G)‐enhanced G‐WSe2/PtSe2 hetero‐diode placed on a metal electrode is reported. To enhance the photogain, a graphene layer placed on the WSe2/PtSe2 heterodiode as a local gating layer is designed. The device exhibits an ultra‐high light on/off ratio of up to 108 and ultra‐fast photoresponse speed with raising time τr = 0.9 µs and decay time of τd = 1.5 µs in the visible spectra range. Notably, ultrabroad band photoresponse from 405 to 3366 nm is demonstrated under the self‐power model. Notably, the device presented a competitive photovoltaic effect with a high energy conversion efficiency (PCE) of 3.45%. The results pave the way toward a new approach to tuning the performance of the atomic thin layered materials photodetector. [ABSTRACT FROM AUTHOR]

In this study, a detector is developed using deuterated L‐alanine doped triglycine sulfate (DLATGS) crystals capable of detecting circularly polarized light (CPL) and various polarization states. As a primary pyroelectric detection crystal, DLATGS has exhibited notable optical responses to both linearly and circularly polarized light during the tests, demonstrating a favorable polarization ratio of 3.86 and an anisotropic factor glph${g}_{lph}$ of 0.529. The research discovers the broad‐spectrum bulk photovoltaic (BPVE) characteristics in DLATGS, highlighting its potential for CPL detection. By integrating linear and circular bulk photovoltaic effect theories (LBPV and CBPV), the crystal's ability to differentiate between various polarization modes, including left‐/right‐handed polarized light, is confirmed. The BPVE and pyro‐phototronic coupling responses is characterized, laying a theoretical foundation for a rare pyroelectric effect‐based multifunctional polarization detector. The overall consistency of phenomena and theoretical framework bridges the gap between theoretical predictions and experimental validation. This work not only advances the understanding of DLATGS crystals but also sets the stage for further exploration into chiral materials and the development of TGS‐type crystals in future photoelectronic detectors. [ABSTRACT FROM AUTHOR]

The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V−1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection. The bulk photovoltaic effect (BPVE) has potential for the realization of high conversion efficiency optoelectronic devices. Here, the authors show that combined in-plane and out-of-plane charge polarizations in MoS2/black phosphorus heterostructures can enhance the BPVE and reduce the extrinsic response times down to 2.2 ns. [ABSTRACT FROM AUTHOR]