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1. Detection of stable positive fixed charges in AlOx activated during annealing with in situ modulated PhotoLuminescence

Author

Jean-Charles Vanel, François Silva, Pere Roca i Cabarrocas, Mengkoing Sreng, Anatole Desthieux, Etienne Drahi, Jorge Posada, Pavel Bulkin, Ileana Florea, B. Bazer-Bachi, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), PHOTOWATT, EDF ENR PWT, and EDF (EDF)

Subjects
In situ, Materials science, Photoluminescence, Passivation, Renewable Energy, Sustainability and the Environment, business.industry, Annealing (metallurgy), 02 engineering and technology, Carrier lifetime, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Plasma-enhanced chemical vapor deposition, Phase (matter), Optoelectronics, Thin film, [INFO.INFO-BT]Computer Science [cs]/Biotechnology, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

An in situ Modulated Photoluminescence (MPL) measurement setup mounted on a Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor is described. A method for deriving the actual minority carrier lifetime at the specific injection level of 1.1015 cm−3 is presented. This tool was used in a case study to monitor the passivation properties of aluminum oxide (AlOx) thin films upon annealing. Interesting kinetics, such as a drop of lifetime at temperatures higher than 250 °C along with a recovery of the lifetime during the cooling phase, are shown. Moreover, these in situ results combined with ex situ studies allowed us to demonstrate the formation a stable high positive fixed charge density in the AlOx layer (+1.1012 cm−2) as a consequence of the combination of annealing and light exposure.

Published
2021
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2. High Efficiency Process for Industrial Manufacturing of p-Type Crystalline Silicon Solar Cells Developed in the Frame of PROTERRA Project

Author

Le Quang, N., Gall, P., Monna, R., Gauthier, M., Gérard, Davy, Williatte, S., Rambaud, A., Goaer, G., Lemiti, Mustapha, Pelissier, B., Conte, D., Moyroud, J., Vilcot, Jean-Pierre, Pawlik, M., Halbwax, Mathieu, PHOTOWATT, EDF ENR PWT, EDF (EDF), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie, de physique des matériaux et de cosmochimie (IMPMC), Muséum national d'Histoire naturelle (MNHN)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de recherche pour le développement [IRD] : UR206-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes - UFR Médecine - Département de Maïeutique (UGA UFRMDM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de recherche pour le développement [IRD] : UR206-Muséum national d'Histoire naturelle (MNHN)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

26 September (2014), 1328 – 1332; International audience; no abstract

Published
2014

3. Impact du recuit d'activation sur la passivation par Al2O3 du silicium type p Cz

Author

Pawlik, Matthieu, Vilcot, Jean-Pierre, Halbwax, Mathieu, GAUTHIER, M., Le Quang, N., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PHOTOWATT, EDF ENR PWT, and EDF (EDF)

Abstract

L'Al2O3 déposé par ALD est un diélectrique bien connu pour la passivation de surface du silicium type-p. Cependant, une étape de recuit post-dépôt est nécessaire pour activer la passivation. Grâce à des mesures de densités de charges effectives, de défauts d'interface, temps de vie de porteurs de charges, XPS (X-ray Photoelectron Spectroscopy), SIMS (Secondary Ion Mass Spectrometry), sur le même échantillon, une description duprocessus d'activation est donnée. La présence d'hydrogène et d'oxygène est reliée à l'évolution des paramètres électriques pour un recuit de 30min à 450°C pour du silicium type p Cz.

Published
2014

4. Charge Equilibrium of a Laser-Generated Carbon-Ion Beam in Warm Dense Matter

Author

V. Floquet, J-P Rozet, T. Ceccotti, Maxence Gauthier, Sophia Chen, Toma Toncian, Dominique Vernhet, Oswald Willi, Lorenzo Romagnani, Christian Peth, Domenico Doria, C. Blancard, Mirela Cerchez, Julien Fuchs, M. Scheinder, P. Audebert, Ronnie Shepherd, Marco Borghesi, G. Faussurier, Emily Lamour, Anna Lévy, PHOTOWATT, EDF ENR PWT, EDF (EDF), ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Laboratoire pour l'utilisation des lasers intenses (LULI), Université Pierre et Marie Curie - Paris 6 (UPMC)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut de biochimie et génétique cellulaires (IBGC), Université Bordeaux Segalen - Bordeaux 2-Centre National de la Recherche Scientifique (CNRS), Service des Photons, Atomes et Molécules (SPAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Institut für Laser und Plasmaphysik, Heinrich Heine Universität Düsseldorf = Heinrich Heine University [Düsseldorf], Department of Pure and Applied Physics [Belfast], Queen's University [Belfast] (QUB), LULI technical team, National Science Foundation [1064468], LASERLAB Europe [001528], EPSRC (LIBRA consortium) [EP/E035728/1, EP/I029206/1], Triangle de la Physique RTRA network, DFG Transregio [SFB-TR 18], GRK 1203 programs, ELI [CZ.1.05/1.1.00/483/02.0061], OPVK 3 [CZ.1.07/2.3.00/20.0279], and [ANR-11-IDEX-004-02]

Subjects
Physics, Ab initio, General Physics and Astronomy, chemistry.chemical_element, Charge (physics), Plasma, Warm dense matter, Laser, 01 natural sciences, 7. Clean energy, 010305 fluids & plasmas, law.invention, Ion, chemistry, law, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Atomic physics, 010306 general physics, Nucleon, Carbon
Abstract

International audience; Using ion carbon beams generated by high intensity short pulse lasers we perform measurements of single shot mean charge equilibration in cold or isochorically heated solid density aluminum matter. We demonstrate that plasma effects in such matter heated up to 1 eV do not significantly impact the equilibration of carbon ions with energies 0.045-0: 5 MeV/nucleon. Furthermore, these measurements allow for a first evaluation of semiempirical formulas or ab initio models that are being used to predict the mean of the equilibrium charge state distribution for light ions passing through warm dense matter. DOI: 10.1103/PhysRevLett.110.135003

Published
2013
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5. Passivation Al2O3 par ALD sur p-Si Cz

Author

PAWLIK, M., Vilcot, J.P., Halbwax, M., GAUTHIER, M., Le Quang, N., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PHOTOWATT, EDF ENR PWT, and EDF (EDF)

Published
2013

6. Copper Light-induced Plating Contacts with Ni Seed-layer for mc-Si Solar Cells after Laser Ablation of SiNx:H

Author

M. Gauthier, Nam Le Quang, Mustapha Lemiti, G. Poulain, Alexandru Focsa, D. Blanc, Corina Barbos, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Total, TOTAL S.A., TOTAL FINA ELF-TOTAL FINA ELF, PHOTOWATT, EDF ENR PWT, EDF (EDF), Photowatt, industrie, and INL - Dispositifs Electroniques (INL - DE)

Subjects
Silicon, Materials science, Passivation, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Metallization, law.invention, chemistry.chemical_compound, Energy(all), law, Nickel, Plating, 0103 physical sciences, Solar cell, Contact, Copper plating, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Laser ablation, Metallurgy, 021001 nanoscience & nanotechnology, Copper, Solar Cells, multicrystalline, chemistry, Silicon nitride, 0210 nano-technology
Abstract

This study focuses on the electrochemical Ni/Cu metallization of multi-crystalline silicon (mc-Si) without alignment steps. Selective ablation of the silicon nitride (SiNx:H) anti-reflection and passivation coating was performed prior to metallization with a frequency tripled Nd:YAG laser. Electroless nickel-phosphorous layers of different thicknesses were deposited as a seed-layer at 95 °C on two batches of samples before electrolytic copper thickening. The thickening of the Ni contact by copper was done by light-induced plating (LIP). The influence of laser ablation parameters as well as chemical etching prior to metal deposition was investigated. The morphology of electrochemically deposited Ni and Cu metal layers was investigated by SEM and optical microscope. Laboratory scale solar cells were fabricated to evaluate the electrical properties of the front contacts. A copper thickness of between 9 and 16 μm was necessary in order to optimize the fill factor. The best efficiency measured on 200 μm thick p-type mc-Si solar cell with an area of 4.4 cm2 was 15.5%. An average efficiency of 15% over 18 samples has been demonstrated. Such results were obtained without any additional thermal annealing treatment of the Ni seed-layer. The limiting factors as well as possible improvements are discussed.

Published
2013

7. SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS

Author

Dupuis, J., Lelièvre, J.-F., Fourmond, E., Mong-The Yen, V., Nichiporuk, O., Le Quang, N., Lemiti, M., INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), PHOTOWATT, EDF ENR PWT, and EDF (EDF)

Subjects
010302 applied physics, Antireflection Coating, SiON, Mono- and Multicrystalline Silicon Materials and Cells, 02 engineering and technology, SiN, 021001 nanoscience & nanotechnology, Wafer-based Silicon Solar Cells and Materials Technology, 01 natural sciences, 7. Clean energy, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Multicrystalline Silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1636-1639, In order to enhance photon transmission into multicrystalline silicon solar cells, double-layer antireflection coatings (ARC) were simulated using the measured optical constants of hydrogenated silicon oxynitride SiOxNy:H and hydrogenated silicon nitride SiNx:H layers deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). On polished surfaces, these optimized structures have the potential to increase the short-circuit current by more than 2% for non-encapsulated cells and up to 0.5% for encapsulated cells, in comparison with the standard single SiNx:H ARC. Industrial multicrystalline silicon solar cells were fabricated in order to validate the simulations. In spite of an inhomogeneous NaOH textured surface, the short-circuit current have shown an increase up to 2.3%, which highlights the potential of such structures for laboratory high-efficiency solar cells.

Published
2009
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8. Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties

Author

M. Gauthier, I. Perichaud, N. Le Quang, Santo Martinuzzi, G. Goaer, Damien Barakel, Olivier Palais, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), PHOTOWATT, EDF ENR PWT, EDF (EDF), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Materials science, Silicon, Crucible, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, Solar cell, Wafer, Ingot, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Directional solidification, 010302 applied physics, Metallurgy, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Grain boundary, 0210 nano-technology, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing
Abstract

International audience; The bulk lifetime tau(n) and diffusion length L-n of minority carriers vary through the height of a cast multicrystalline silicon ( mc-Si) block. This variation is due to the segregation of metallic impurities during the directional solidification and the native impurity concentrations increase from the bottom to the top of the ingot, which is solidified last, while the ingot bottom, which is solidified first, is contaminated by the contact with the crucible floor. It is of interest to verify if a correlation exists between the bulk lifetime tau of as cut wafers and the conversion eficiency. of solar cells. In a very large ingot (> 310 kg), it was found that tau(0), in raw wafers, tau(dif) in phosphorus diffused ones and Ln in diffused wafers are smaller in the top and in the bottom of the ingot. The same evolution is observed in solar cells, however the diffusion length values L-cel in the central part of the ingot are markedly higher than those found in diffused wafers, due to the in-diffusion of hydrogen from the SiN-H antireflection coating layer. The variations of. and those of tau(0), along the ingot height, are well correlated, suggesting that the evaluation of tau(0) can predict the properties of the devices. In addition, segregation phenomena around the grain boundaries are observed at the bottom of the ingots, due to a marked contamination by the crucible floor, and at its top where impurities are accumulated. These phenomena are linked to the long duration of the solidification process and the large amount of imperfect silicon used to cast the ingot.

Published
2007
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9. Highly efficient MoO x -free semitransparent perovskite cell for 4 T tandem application improving the efficiency of commercially-available Al-BSF silicon.

Author

Ramos FJ, Jutteau S, Posada J, Bercegol A, Rebai A, Guillemot T, Bodeux R, Schneider N, Loones N, Ory D, Broussillou C, Goaer G, Lombez L, and Rousset J

Abstract

In this work, the fabrication of MoO x -free semitransparent perovskite solar cells (PSC) with Power Conversion Efficiencies (PCE) up to 15.7% is reported. Firstly, opaque PSCs up to 19.7% were fabricated. Then, the rear metal contact was replaced by a highly transparent and conductive indium tin oxide (ITO) film, directly sputtered onto the hole selective layer, without any protective layer between Spiro-OMeTAD and rear ITO. To the best of our knowledge, this corresponds to the most efficient buffer layer-free semitransparent PSC ever reported. Using time-resolved photoluminescence (TRPL) technique on both sides of the semitransparent PSC, Spiro-OMeTAD/perovskite and perovskite/TiO 2 interfaces were compared, confirming the great quality of Spiro-OMeTAD/perovskite interface, even after damage-less ITO sputtering, where degradation phenomena result less important than for perovskite/TiO 2 one. Finally, a 4-terminal tandem was built combining semitransparent PSC with a commercially-available Aluminium Back Surface Field (Al-BSF) silicon wafer. That silicon wafer presents PCE = 19.52% (18.53% after being reduced to cell size), and 5.75% once filtered, to generate an overall 4 T tandem efficiency of 21.18% in combination with our champion large semitransparent PSC of 15.43%. It means an absolute increase of 1.66% over the original silicon wafer efficiency and a 2.65% over the cut Si cell.

Published
2018
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