106 results on '"Pae, S."'
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2. Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC
3. Reliability Improvement with Optimized BEOL Process in Advanced DRAM
4. Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs
5. Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology
6. Reliability Characterization for Advanced DRAM using HK/MG + EUV Process Technology
7. Intra- and Extracellular Calcium Modulates Sterocilia Stiffness on Chick Cochlear Hair Cells
8. Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM
9. PMOS NBTI-induced circuit mismatch in advanced technologies
10. A Comprehensive Reliability Characterization of 5G SoC Mobile Platform Featuring 7nm EUV Process Technology
11. Reliability of Industrial grade Embedded-STT-MRAM
12. CCL27 (CTACK) is critical for the development of skin inflammation in the interleukin-4-trangenic mouse model of atopic dermatitis: 033
13. 1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology
14. Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology
15. Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product Reliability
16. Reliability engineering: Help enable technology scaling
17. Reliability Characterizations for high-performance, low-power 10nm-FinFET technology
18. Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations
19. From WLR to product reliability and qualifications in the 3D transistor era
20. Gate dielectric TDDB characterizations of advanced High-k and metal-gate CMOS logic transistor technology
21. Voluntary disclosure of precision information
22. Multicell and blastocyst survival after vitrification: a comparison between solutions from two different commercial sources
23. Optimal disclosure policy in oligopoly markets
24. Discretionary disclosure, efficiency, and signal informativeness
25. High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors
26. Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology
27. DRAM as source of randomness
28. Strategic interaction in auditing: An analysis of auditors' legal liability, internal control system quality, and audit effort
29. A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
30. Dielectric breakdown in a 45 nm high-k/metal gate process technology
31. BTI reliability of 45 nm high-K + metal-gate process technology
32. Effect of BTI Degradation on Transistor Variability Advanced Semiconductor Technologies
33. Information sharing in the presence of preemptive incentives: Economic consequences of mandatory disclosure
34. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
35. Effect of NBTI degradation on transistor variability in advanced technologies
36. Erscheinungsweisen der spezifischen Sprachentwicklungsstörung im Sprachvergleich - sprachübergreifende oder sprachunabhängige Merkmale?
37. Randomizing Functions: Simulation of a Discrete Probability Distribution Using a Source of Unknown Distribution
38. Strain specific differences in peribronchial mast cell accumulation in BALB/c vs. C57BL/6 murine models of asthma
39. Bronchiolitis obliterans masquerading as severe persistent asthma in two children
40. An analysis of the economic consequences of the proportionate liability rule
41. Therapeutic communication techniques used by experienced and inexperienced care workers toward the elderly in a nursing home
42. Erratic fluctuations of sram cache vmin at the 90nm process technology node.
43. Random charge effects for PMOS NBTI in ultra-small gate area devices.
44. 6-T cell circuit dependent GOX SBD model for accurate prediction of observed vccmin test voltage dependency.
45. PMOS NBTI-induced circuit mismatch in advanced technologies.
46. New gate oxide wear-out model for accurate device lifetime projections on vertical drain NMOSFET.
47. Prediction of knock onset and the autoignition site in spark-ignition engines
48. Similarities and variation in noun and verb acquisition: a crosslinguistic study of children learning German, Korean, and Turkish.
49. A note on the speleo-minerals in South Korea
50. Erratic fluctuations of sram cache vmin at the 90nm process technology node
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