Search

In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong interactions, resulting in a Mott insulator. For an even number of electrons per unit cell, either band- or Mott-insulators can theoretically occur. However, unambiguously identifying an unconventional Mott-insulator with an even number of electrons experimentally has remained a longstanding challenge due to the lack of a momentum-resolved fingerprint. This challenge has recently become pressing for the layer dimerized van der Waals compound Nb$_3$Br$_8$, which exhibits a puzzling magnetic field-free diode effect when used as a weak link in Josephson junctions, but has previously been considered to be a band-insulator. In this work, we present a unique momentum-resolved signature of a Mott-insulating phase in the spectral function of Nb$_3$Br$_8$: the top of the highest occupied band along the out-of-plane dimerization direction $k_z$ has a momentum space separation of $\Delta k_z=2\pi/d$, whereas the valence band maximum of a band insulator would be separated by less than $\Delta k_z=\pi/d$, where $d$ is the average spacing between the layers. As the strong electron correlations inherent in Mott insulators can lead to unconventional superconductivity, identifying Nb$_3$Br$_8$ as an unconventional Mott-insulator is crucial for understanding its apparent time-reversal symmetry breaking Josephson diode effect. Moreover, the momentum-resolved signature employed here could be used to detect quantum phase transition between band- and Mott-insulating phases in van der Waals heterostructures, where interlayer interactions and correlations can be easily tuned to drive such transition., Comment: 9 pages, 3 figures

Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport response that is correlated with their antiferromagnetic ordering. The ability to read out and manipulate this ordering is crucial for their integration into spintronic devices. These materials exhibit a tiny unbalanced magnetic moment such that a large external magnetic field can, in principle, be used to set the material into a single antiferromagnetic domain. However, in thin films of Mn3Sn, we find that such fields induce only a partial magnetic ordering. By detecting two orthogonal in-plane components of the magnetic order vector, we find that the non-switchable fraction has a unidirectional anisotropy. This also enables us to visualize switching along multiple easy axes in Mn3Sn. Studying the switching at the nanoscale allows us to correlate the pining behavior to crystal grain boundaries in the Mn3Sn nanowire structures.

The generation of $S_z=1$ triplet Cooper pairs has been predicted theoretically in superconducting-ferromagnetic hybrid heterostructures in the presence of spin-orbit coupling [F. S. Bergeret and I. V. Tokatly, Phys. Rev. B 89, 134517 (2014) and Jacobsen et al., Sci. Rep. 6, 23926 (2016)]. In this study, we experimentally investigate vertical Josephson junctions where the weak link is formed from a ferromagnetic layer with perpendicular magnetic anisotropy sandwiched by two non-magnetic layers with weak or strong spin-orbit coupling. We find that the decay of the Josephson coupling is reduced in the latter case, possibly indicating the presence of $S_z=1$ spin-triplet correlations. We speculate that the canted magnetization required for these correlations is provided by the interaction of magnetization with Meissner effect in the superconducting layers.

Recent advances in van der Waals (vdW) materials have sparked renewed interest in the impact of dimensionality on magnetic phase transitions. While ordered magnetic phases have been demonstrated to survive in the two-dimensional (2D) limit, the quest for a spin-glass with quenched magnetic disorder in lower dimensions has proven elusive. Here we show evidence of a spin-glass emerging from randomly distributed Fe atoms in Fe3GeTe2, the first time such a state has been reported in a vdW material. AC magnetic susceptibility displays a strong frequency dependence indicative of slow spin dynamics. Additional distinctive phenomena, including ageing, chaos, and memory effects, further substantiate the existence of a glassy state. Remarkably, we find that this state persists even in single-unit-cell thick Fe3GeTe2, thereby confirming the existence of a 2D spin-glass. The formation of spin-glass states via intercalation in vdW systems allows for highly tunable spin-glass states that are otherwise difficult to realize.

Domain walls (DWs) on magnetic racetracks are at the core of the field of spintronics, providing a basic element for classical information processing. Here, we show that mobile DWs also provide a blueprint for large-scale quantum computers. Remarkably, these DW qubits showcase exceptional versatility, serving not only as stationary qubits, but also performing the role of solid-state flying qubits that can be shuttled in an ultrafast way. We estimate that the DW qubits are long-lived because they can be operated at sweet spots to reduce potential noise sources. Single-qubit gates are implemented by moving the DW, and two-qubit entangling gates exploit naturally emerging interactions between different DWs. These gates, sufficient for universal quantum computing, are fully compatible with current state-of-the-art experiments on racetrack memories. Further, we discuss possible strategies for qubit readout and initialization, paving the way toward future quantum computers based on mobile topological textures on magnetic racetracks., Comment: 14 pages, 7 figures

The generation of spin currents and their application to the manipulation of magnetic states is fundamental to spintronics. Of particular interest are chiral antiferromagnets that exhibit properties typical of ferromagnetic materials even though they have negligible magnetization. Here, we report the generation of a robust spin current with both in-plane and out-of-plane spin polarization in epitaxial thin films of the chiral antiferromagnet Mn3Sn in proximity to permalloy thin layers. By employing temperature-dependent spin-torque ferromagnetic resonance, we find that the chiral antiferromagnetic structure of Mn3Sn is responsible for an in-plane polarized spin current that is generated from the interior of the Mn3Sn layer and whose temperature dependence follows that of this layer's antiferromagnetic order. On the other hand, the out-of-plane spin polarized spin current is unrelated to the chiral antiferromagnetic structure and is instead the result of scattering from the Mn3Sn/permalloy interface. We substantiate the later conclusion by performing studies with several other non-magnetic metals all of which are found to exhibit out-of-plane polarized spin currents arising from the spin swapping effect., Comment: 17 pages, 4 figures

Spin-momentum locking in solids describes a directional relationship between the electron's spin angular momentum and its linear momentum over the entire Fermi surface. While orthogonal spin-momentum locking, such as Rashba spin-orbit coupling, has been studied for decades and inspired a vast number of applications, its natural counterpart, the purely parallel spin-momentum locking, has remained elusive in experiments. Recently, chiral topological semimetals that host single- and multifold band crossings have been predicted to realize such parallel locking. Here, we use spin- and angle-resolved photoelectron spectroscopy to probe spin-momentum locking of a multifold fermion in the chiral topological semimetal PtGa via the spin-texture of its topological Fermi-arc surface states. We find that the electron spin of the Fermi-arcs points orthogonal to their Fermi surface contour for momenta close to the projection of the bulk multifold fermion, which is consistent with parallel spin-momentum locking of the latter. We anticipate that our discovery of parallel spin-momentum locking of multifold fermions will lead to the integration of chiral topological semimetals in novel spintronic devices, and the search for spin-dependent superconducting and magnetic instabilities in these materials.

Artificially engineered topological superconductivity has emerged as a viable route to create Majorana modes, exotic quasiparticles which have raised great expectations for storing and manipulating information in topological quantum computational schemes. The essential ingredients for their realization are spin non-degenerate metallic states proximitized to an s-wave superconductor. In this context, proximity-induced superconductivity in materials with a sizable spin-orbit coupling has been heavily investigated in recent years. Although there is convincing evidence that superconductivity may indeed be induced, it has been difficult to elucidate its topological nature. In this work, we systematically engineer an artificial topological superconductor by progressively introducing superconductivity (Nb) into metals with strong spin-orbital coupling (Pt) and 3D topological surface states (Bi2Te3). Through a longitudinal study of the character of superconducting vortices within s-wave superconducting Nb and proximity-coupled Nb/Pt and Nb/Bi2Te3, we detect the emergence of a zero-bias peak that is directly linked to the presence of topological surface states. Supported by a detailed theoretical model, our results are rationalized in terms of competing energy trends which are found to impose an upper limit to the size of the minigap separating Majorana and trivial modes, its size being ultimately linked to fundamental materials properties.

Generally, lattice distortions play a key role in determining the ground states of materials. Although it is well known that trigonal distortions are generic to most two-dimensional transition metal dichalcogenides, the impact of this structural distortion on the electronic structure has not been understood conclusively. Here, by using a combination of polarization dependent X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy (XPS) and atomic multiplet cluster calculations, we have investigated the electronic structure of titanium dichalcogenides TiX2 (X=S, Se, Te), where the magnitude of the trigonal distortion increase monotonically from S to Se and Te. Our results reveal the presence of an anomalous and large crystal filed splitting. This unusual kind of crystal field splitting is likely responsible for the unconventional electronic structure of TiX2 compounds. Our results also indicate the drawback of the distorted crystal field picture in explaining the observed electronic ground state of these materials and emphasize the key importance of metal-ligand hybridization and electronic correlation in defining the electronic structures near Fermi energy.

We report on the heteroepitaxial stabilization of YCrO3 ultra-thin films on LSAT (001) substrate. Using a combination of resonant X-ray absorption spectroscopy (XAS) and atomic multiplet cluster calculation, the electronic structure of YCrO3 thin film was investigated. Polarization dependent Cr L3,2 edge XAS measurement reveal the presence of an anomalous orbital polarization uncharacteristic of a 3d3 electronic system. Atomic multiplet calculations demonstrate the critical importance of charge transfer energy, Coulomb correlation strength and hopping interaction in stabilizing this unusual orbital polarized state likely connected to the bulk multiferroicity.

Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces presents an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3 heterojunction is still an open question. Here, by using a prototypical two-dimensional electron gas (2DEG) which emerges at the interface between band insulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3 , the experiment reveals the evidence for magnetic phase separation in hole-doped Ti d1 t2g system resulting in spin-polarized 2DEG. The details of electronic and magnetic properties of the 2DEG were investigated by temperature-dependent d.c. transport, angle-dependent X-ray photoemission spectroscopy, and temperature-dependent magnetoresistance. The observation of clear hysteresis in magnetotransport at low magnetic fields implies spin-polarization from magnetic islands in the hole rich LaTiO3 near the interface. These findings emphasize the role of magnetic instabilities in doped Mott insulators thus providing another path for designing all-oxide structures relevant to spintronics applications.

Extremely large magnetoresistance (XMR), observed in transition metal dichalcogendies, WTe$_2$, has attracted recently a great deal of research interests as it shows no sign of saturation up to the magnetic field as high as 60 T, in addition to the presence of type-II Weyl fermions. Currently, there has been a lot of discussion on the role of band structure changes on the temperature dependent XMR in this compound. In this contribution, we study the band structure of WTe$_2$ using angle-resolved photoemission spectroscopy (ARPES) and first-principle calculations to demonstrate that the temperature dependent band structure has no substantial effect on the temperature dependent XMR as our measurements do not show band structure changes on increasing the sample temperature between 20 and 130 K. We further observe an electronlike surface state, dispersing in such a way that it connects the top of bulk holelike band to the bottom of bulk electronlike band. Interestingly, similar to bulk states, the surface state is also mostly intact with the sample temperature. Our results provide invaluable information in shaping the mechanism of temperature dependent XMR in WTe$_2$., Comment: 7 pages, 3 figures. arXiv admin note: text overlap with arXiv:1705.07217

Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe$_2$ and MoTe$_2$ the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe$_2$, while it is yet to be clear in the case of MoTe$_2$ which has an identical crystal structure of WTe$_2$ at low temperatures. In this paper, we report low-energy electronic structure and Fermi surface topology of MoTe$_2$ using angle-resolved photoemission spectrometry (ARPES) technique and first-principle calculations, and compare them with that of WTe$_2$ to understand the mechanism of XMR. Our measurements demonstrate that MoTe$_2$ is an uncompensated semimetal, contrary to WTe$_2$ in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe$_2$. In this context, we also discuss the applicability of the existing other conjectures on the XMR of these compounds., Comment: 9 pages, 6 figs

We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi2Se3 topological insulator, which is being is grown by self flux method through solid state reaction from high temperature (950C) melt and slow cooling (2C/hour) of constituent elements. Bi2Se3 exhibited metallic behaviour down to 5K. Magneto transport measurements revealed linear up to 400% and 30% MR at 5K under 14 Tesla field in perpendicular and parallel field direction respectively. We noticed that the magneto-resistance (MR) of Bi2Se3 is very sensitive to the angle of applied field. MR is maximum when the field is normal to the sample surface, while it is minimum when the field is parallel. Hall coefficient (RH) is seen nearly invariant with negative carrier sign down to 5K albeit having near periodic oscillations above 100K. Heat capacity (Cp) versus temperature plot is seen without any phase transitions down to 5K and is well fitted (Cp = gammaT + betaT3) at low temperature with calculated Debye temperature (ThetaD) value of 105.5K. Clear Raman peaks are seen at 72, 131 and 177 cm-1 corresponding to A1g1, Eg2 and A1g2 respectively. Though, two distinct asymmetric characteristic peak shapes are seen for Bi 4f7/2 and Bi 4f5/2, the Se 3d region is found to be broad displaying the overlapping of spin - orbit components of the same. Angle-resolved photoemission spectroscopy (ARPES) data of Bi2Se3 revealed distinctly the bulk conduction bands (BCB), surface state (SS), Dirac point (DP) and bulk valence bands (BVB) and 3D bulk conduction signatures are clearly seen. Summarily, host of physical properties for as grown Bi2Se3 crystal are reported here., Comment: 6 Pages Text + Figs; Comments Suggestions welcome

A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2 based devices. This phase has been most often attributed to the metallic 1T phase. We investigate the electronic structure of chemically exfoliated MoS2 few layered systems using spatially resolved (lesser than 120 nm resolution) photoemission spectroscopy and Raman spectroscopy in conjunction with state-of-the-art electronic structure calculations. On the basis of these results, we establish that the ground state of this phase is a small gap (~90 meV) semiconductor in contrast to most claims in the literature; we also identify the specific trigonal (1T') structure it has among many suggested ones.

We have revisited the valence band electronic structure of NiO by means of hard x-ray photoemission spectroscopy (HAXPES) together with theoretical calculations using both the GW method and the local density approximation + dynamical mean-field theory (LDA+DMFT) approaches. The effective impurity problem in DMFT is solved through the exact diagonalization (ED) method. We show that the LDA+DMFT method alone cannot explain all the observed structures in the HAXPES spectra. GW corrections are required for the O bands and Ni-s and p derived states to properly position their binding energies. Our results establish that a combination of the GW and DMFT methods is necessary for correctly describing the electronic structure of NiO in a proper ab-initio framework. We also demonstrate that the inclusion of photoionization cross section is crucial to interpret the HAXPES spectra of NiO.We argue that our conclusions are general and that the here suggested approach is appropriate for any complex transition metal oxide., Comment: 16 pages, 5 figures