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44 results on '"Pan, Jiangyong"'

3. Polymer-assisted crystal growth regulation and defect passivation for high-performance flexible solar-blind photodetectors based on copper-based halides

Author

Liu, Chengjun, primary, Zhang, Yuyi, additional, Wang, Lixi, additional, Chang, Jianhua, additional, Li, Qing, additional, Zhang, Xiaobing, additional, Bae, Byung Seong, additional, Fayemi, Omolola Esther, additional, Xu, Xiaobao, additional, Pan, Jiangyong, additional, Chen, Jing, additional, and Lei, Wei, additional

Published
2024
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5. Rapid growth of a 24 mm2 scale hexagonal boron nitride crystal in Ni–Cr solution.

Author

Zhao, Jianguo, Wang, Haichao, Yu, Yue, Yang, Minhui, Xu, Ru, Zhang, Hui, Pan, Jiangyong, Li, Yuanyuan, Liu, Xiang, Tao, Tao, Zhuang, Zhe, Liu, Bin, and Chang, Jianhua

Abstract

A high quality and large size hexagonal boron nitride (hBN) crystal was successfully grown in Ni–Cr solution at 1550 °C. The total growth time was reduced from 68.88 hours to 49.17 hours using a specially designed cooling protocol. The thickness of the grown hBN film was found to be 300 μm, and an area of a mechanically exfoliated hBN film of up to 24 mm2 was achieved. The narrow X-ray diffraction peak of the (002)-plane hBN and the Raman E2g vibration peak indicated a high crystalline quality of hBN grown in this study. Furthermore, a metal–semiconductor–metal type photodetector was prepared, the dark current density and photocurrent density with a bias voltage of 10 V of which were 1.5 and 500 pA cm−1, respectively. A high signal-to-noise ratio of 2 orders of magnitude was achieved, further proving the high crystalline quality of the hBN crystal grown in this study. [ABSTRACT FROM AUTHOR]

Published
2023
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7. Highly Stable and Sensitive Solar-blind Photodetectors based on CsCu2I3 Perovskites

Author

Pan, Jiangyong, primary, Mao, Lei, additional, Gao, Zhenghao, additional, Han, Jiewei, additional, Huang, Yuling, additional, Wei, Yuyang, additional, Lin, Congyuan, additional, Yan, Shikai, additional, Liu, Chengjun, additional, Fang, Fan, additional, Zhao, Xueliang, additional, Wang, Bingqi, additional, Liu, Xiang, additional, Tao, Zhi, additional, Zhao, Jianguo, additional, Xu, Ji, additional, Li, Zeyu, additional, Chen, Jing, additional, Chang, Jianhua, additional, and Wang, Lixi, additional

Published
2023
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9. Excitation wavelength dependent triple-mode photoluminescence of copper-based halides for advanced anti-counterfeiting.

Author

Liu, Chengjun, Zhang, Yuyi, Luo, Manman, Wang, Lixi, Liu, Xingyu, Pan, Jiangyong, Zhao, Zihan, Fang, Fan, Mao, Lei, Huang, Yuling, Wang, Bingqi, Lin, Congyuan, Lei, Wei, Li, Qing, Zhao, Zhiwei, Wu, Jun, Zhu, Zhuoya, Ertugrul, Mehmet, Zhang, Xiaobing, and Chen, Jing

Subjects
PHOTOLUMINESCENCE, POLYETHYLENE oxide, WAVELENGTHS, EXCITED states, EXCITON theory, ULTRAVIOLET radiation
Abstract

New fluorescent materials with a low cost, hypotoxicity, and concealment are desired for the application of anti-counterfeiting. Herein, we report a CsCu2I3@Cs3Cu2I5 composite with a triple-mode photoluminescence (PL) feature by simply adjusting the excitation wavelengths, which are ascribed to the multiple excited states of different phases in the CsCu2I3@Cs3Cu2I5 composite. The broadband emission and high quantum yield (∼51%) of the composite originate from the structure-oriented self-trapped excitons effect of Cs3Cu2I5 and CsCu2I3 phases. Moreover, the incorporation of polyethylene oxide (PEO) into this composite improves the stability of CsCu2I3@Cs3Cu2I5@PEO against harsh environments. The CsCu2I3@Cs3Cu2I5@PEO composite has a slight decay of ∼5% of its initial PL intensity and only a 3.5% shift of the corresponding color coordinate after 30 days of storage. More importantly, its initial PL intensity shows only 10.3% decay under ultraviolet exposure for 200 h. Our work provides a promising approach to design materials for advanced anti-counterfeiting applications. [ABSTRACT FROM AUTHOR]

Published
2023
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10. Highly Stable and Sensitive Solar-Blind Photodetectors Based on CsCu2I3 Perovskites

Author

Pan, Jiangyong, Mao, Lei, Gao, Zhenghao, Han, Jiewei, Huang, Yuling, Wei, Yuyang, Lin, Congyuan, Yan, Shikai, Liu, Chengjun, Fang, Fan, Zhao, Xueliang, Wang, Bingqi, Liu, Xiang, Tao, Zhi, Zhao, Jianguo, Xu, Ji, Li, Zeyu, Chen, Jing, Chang, Jianhua, and Wang, Lixi

Abstract

Solar-blind photodetectors have attracted great attention in the past few years due to their widespread application in the military and civilian field. Herein, we demonstrate a highly stable and sensitive solar-blind photodetector based on lead-free CsCu2I3 crystalline film derived by a facile solution method. The high quality CsCu2I3 films with dense morphology and high crystallinity are acquired by optimizing the crystallization process of CsCu2I3 films. The CsCu2I3 based photodetector exhibits a high solar-blind/ UVA rejection ratio of 102 with the cutoff wavelength located at 303 nm. Meanwhile, the photodetector presents the responsivity of 0.15 A/W and specific detectivity of ${3}.{45}\times {10} ^{{11}}$ Jones, respectively. Moreover, the photodetection ability of device can be well maintained after 1000-circle continuous working and 2-month storage without encapsulation in ambient air. Furthermore, the photodetector is used to construct spectral identification system successfully. The results highlight the great potential of the environment-friendly CsCu2I3 based photodetector for stable and sensitive solar-blind photodetection.

Published
2023
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13. A Synergetic Codoping Strategy Enabling Performance Improvement of Pure‐Blue Perovskite Quantum Dots Light‐Emitting Diodes

Author

Pan, Jiangyong, primary, Zhao, Zihan, additional, Fang, Fan, additional, Wang, Lixi, additional, Wang, Guangzhao, additional, Liu, Chengjun, additional, Huang, Qianqian, additional, Sun, Jinyi, additional, Huang, Yuling, additional, Mao, Lei, additional, Xie, Jing, additional, Xue, Ying, additional, Chen, Jing, additional, and Lei, Wei, additional

Published
2022
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16. Corrigendum: Energy Down-Conversion Cs3Cu2Cl5 Nanocrystals for Boosting the Efficiency of UV Photodetector

Author

Liu, Chengjun, primary, Wang, Lixi, additional, Fang, Fan, additional, Zhao, Zihan, additional, Pan, Jiangyong, additional, Akram, Javed, additional, Shafie, Suhaidi Bin, additional, Talaighil, Razika Zair, additional, Li, Qing, additional, Zhao, Zhiwei, additional, Wu, Jun, additional, Zhu, Zhuoya, additional, Lei, Wei, additional, Zhang, Xiaobing, additional, and Chen, Jing, additional

Published
2021
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17. Energy down-conversion Cs3Cu2Cl5 nanocrystals for boosting the efficiency of UV photodetector

Author

Liu, Chengjun, Wang, Lixi, Fang, Fan, Zhao, Zihan, Pan, Jiangyong, Akram, Javed, Shafie, Suhaidi, Talaighil, Razika Zair, L., Qing, Zhao, Zhiwei, Wu, Jun, Zhu, Zhuoya, Lei, Wei, Zhang, Xiaobing, Chen, Jing, Liu, Chengjun, Wang, Lixi, Fang, Fan, Zhao, Zihan, Pan, Jiangyong, Akram, Javed, Shafie, Suhaidi, Talaighil, Razika Zair, L., Qing, Zhao, Zhiwei, Wu, Jun, Zhu, Zhuoya, Lei, Wei, Zhang, Xiaobing, and Chen, Jing

Abstract

Zero-dimension (0-D) lead halide perovskite nanocrystals (NCs) have attracted a sight of interest in the field of optoelectronic devices due to their outstanding properties, such as high photoluminescence quantum yield (PLQY) and size- and composition-controlled tunable emission wavelengths. However, the toxicity of lead (Pb) element in the lead perovskite NCs is the bottleneck for the commercial application of perovskite NCs. Herein, we report a facile ligand-assisted synthesis to achieve lead-free Cs3Cu2Cl5 NCs with a high PLQY of ∼70% and good stability against environmental oxygen/moisture as a promising down-conversion material. It has good merits of high PLQY and large Stokes shift (∼300 nm) originated from the effect of Jahn–Teller distortion and self-trapped excitons (STEs). Furthermore, the Cs3Cu2Cl5 NCs embedded composite films (NCCFs) were utilized to enhance the ultraviolet (UV) response of silicon (Si) photodetectors. External quantum efficiency (EQE) measurements show that the UV response can be greatly improved from 3.3 to 19.9% @ 295 nm based on NCCFs combined with Si photodiodes. Our work offers an effective approach to develop highly efficient and stable lead-free Cs3Cu2Cl5 NCs for the application in the solar-blind UV photodetector.

Published
2021

19. Energy Down-Conversion Cs3Cu2Cl5 Nanocrystals for Boosting the Efficiency of UV Photodetector

Author

Liu, Chengjun, primary, Wang, Lixi, additional, Fang, Fan, additional, Zhao, Zihan, additional, Pan, Jiangyong, additional, Akram, Javed, additional, Shafie, Suhaidi Bin, additional, Talaighil, Razika Zair, additional, Li, Qing, additional, Zhao, Zhiwei, additional, Wu, Jun, additional, Zhu, Zhuoya, additional, Lei, Wei, additional, Zhang, Xiaobing, additional, and Chen, Jing, additional

Published
2021
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22. Multiple Cations Enhanced Defect Passivation of Blue Perovskite Quantum Dots Enabling Efficient Light‐Emitting Diodes

Author

Pan, Jiangyong, primary, Zhao, Zihan, additional, Fang, Fan, additional, Wang, Lixi, additional, Wang, Guangzhao, additional, Liu, Chengjun, additional, Chen, Jing, additional, Xie, Jing, additional, Sun, Jiayun, additional, Wang, Kai, additional, Liu, Xiang, additional, Tao, Zhi, additional, Zhao, Jianguo, additional, Wu, Qinqin, additional, Chang, Jianhua, additional, Wang, Ye, additional, Lei, Wei, additional, Zhang, Wei, additional, Sun, Xiao Wei, additional, and Zhao, Dewei, additional

Published
2020
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27. Effects of an in-situ SiNx interlayer on structural and optical properties for nonpolar a-plane GaN epilayers.

Author

Zhao, Jianguo, Zhang, Xiong, Fan, Aijie, Chen, Shuai, He, Jiaqi, Pan, Jiangyong, Chen, Daihua, Tian, Ming, Feng, Zhe Chuan, Chang, Jianhua, Liu, Qingquan, and Ge, Junxiang

Abstract

The structural and optical properties for a nonpolar GaN epilayer grown with an in situ SiNx interlayer was studied intensively. The superficial defects were decreased by 83% and root-mean-square was reduced by 61% for nonpolar GaN with an SiNx interlayer. The in situ SiNx was revealed to be powerful to block basal-plane stacking faults (BSFs) in nonpolar GaN because BSF density was reduced from 1.83 × 105 to 8.13 × 104 cm−1 and BSF-related emission was remarkably suppressed by the SiNx interlayer. Moreover, the fast decay lifetime increased from 16.2 to 71.1 ps, which implied the non-radiative recombination in nonpolar GaN was significantly suppressed after the insertion of the SiNx layer. [ABSTRACT FROM AUTHOR]

Published
2020
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43. Effects of an in-situ SiN x interlayer on structural and optical properties for nonpolar a-plane GaN epilayers

Author

Zhao, Jianguo, Zhang, Xiong, Fan, Aijie, Chen, Shuai, He, Jiaqi, Pan, Jiangyong, Chen, Daihua, Tian, Ming, Chuan, Zhe, Chang, Jianhua, Liu, Qingquan, and Ge, Junxiang

Abstract

The structural and optical properties for a nonpolar GaN epilayer grown with an in situ SiN x interlayer was studied intensively. The superficial defects were decreased by 83% and root-mean-square was reduced by 61% for nonpolar GaN with an SiN x interlayer. The in situ SiN x was revealed to be powerful to block basal-plane stacking faults (BSFs) in nonpolar GaN because BSF density was reduced from 1.83 x 105 to 8.13 x 104 cm[?]1 and BSF-related emission was remarkably suppressed by the SiN x interlayer. Moreover, the fast decay lifetime increased from 16.2 to 71.1 ps, which implied the non-radiative recombination in nonpolar GaN was significantly suppressed after the insertion of the SiN x layer.

Published
2020

44. Surface plasmon-enhanced quantum dot light-emitting diodes by incorporating gold nanoparticles.

Author

Pan J, Chen J, Zhao D, Huang Q, Khan Q, Liu X, Tao Z, Zhang Z, and Lei W

Abstract

Surface plasmon-enhanced electroluminescence (EL) has been demonstrated by incorporating gold (Au) nanoparticles (NPs) in quantum dot light-emitting diode (QLED). Time-resolved photoluminescence (TRPL) spectroscopy reveals that the EL enhancement is ascribed to the near-field enhancement through an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Au NPs. It is found that the size of Au NPs and the distance between the Au NPs and the emissive layer have significant effects on the performance of QLED. The enhancement can be maximized as the SP resonance wavelength of Au NPs matches well with the PL emission wavelength of the QD film and the distance between Au NPs and the emissive layer maintains 15 nm. The photoluminance (PL) and EL intensity can be enhanced by 4.4 and 1.7 folds with the incorporation of Au NPs. The maximum current efficiency of 4.56 cd/A can be achieved for the resulting QLEDs by incorprating Au NPs with an enhancement factor of 2.0. In addition, the enhancement ratio of 2.2 can be achieved for the lifetime of resulting QLED.

Published
2016
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