180 results on '"Park, Kwon-Shik"'
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2. Finding the cause of degradation of low-temperature oxide thin-film transistors
3. 30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor.
4. Improvement of the Bias Instability Characteristics Driven by Organic Film in IGZO TFT for OLED Back Plane
5. Correlation between spin density and Vth instability of IGZO thin-film transistors
6. P‐252: Late‐News Poster: Deep Learning based Inverse Design Technology for White Organic Light‐emitting Diode Thin‐film Structure.
7. P‐88: Low reflection antistatic material design for improving ambient contrast ratio of LCD Panel.
8. 59‐1: Low Reflection Material Design and the Application in the LCD Panel
9. 85‐3: High‐Transmittance, High‐Resolution Color Filters with Tailored Structures for Micro‐displays
10. 33‐1: Invited Paper: Development of Deuteration Technology to Improve Lifetime of OLED EX and Identification of Stability of Deuterated Materials
11. P‐252: Late‐News Poster:Deep Learning based Inverse Design Technology for White Organic Light‐emitting Diode Thin‐film Structure
12. High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder
13. Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors
14. Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending
15. Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
16. P‐137: High Performance Coplanar IGZO TFT Image Sensor with Partial Passivation‐less Structure for Digital X‐ray Detector
17. P‐14: Effects of Film Density on IGZO Based TFT Device Reliability
18. 27‐2: Novel LTPS‐TFT Backplane Structure on Glass for 1,443ppi 4.3‐in. AMOLED VR Display
19. P‐11: Effects of Ar Dilution on N 2 O/SiH 4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics
20. 9‐2: Oxide TFT behavior Under X‐Ray Irradiation in DXD Backplane
21. Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study
22. Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)
23. Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect
24. [Paper] Improvement of Internal Compensation by Differential Offset Method for OLED Display Using High Mobility Oxide TFT
25. 33‐1: Invited Paper:Development of Deuteration Technology to Improve Lifetime of OLED EX and Identification of Stability of Deuterated Materials
26. IGZO TFT Behavior Under X-Ray Irradiation in DXD Panel
27. Internal Compensation by Offset Method for QHD OLED Display Using High Mobility Oxide TFT
28. The Significance on Structural Modulation of Buffer and Gate Insulator for ALD Based InGaZnO TFT Applications
29. P‐3: LTPS Device and Panel Fabrication Using Excimer Laser Dehydrogenation and Crystallization
30. Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study.
31. Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices
32. 15‐1: Invited Paper: Manufacturing Technology of LTPO TFT
33. Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors
34. Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer
35. Hydrogen behavior under X-ray irradiation for a-IGZO thin film transistors
36. High Performance Micro-Crystalline Silicon TFT Using Indirect Thermal Crystallization Technique
37. A Study of Encapsulation Structure for TFT Reliability in Top Emission OLED Display
38. P‐11: Effects of Ar Dilution on N2O/SiH4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics.
39. P‐13: High Performance a ‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach
40. Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
41. Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation
42. Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping
43. Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
44. Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications.
45. P‐11: Effects of Ar Dilution on N2O/SiH4PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics
46. 5-2: Gate Driver Circuits for Internal Compensation Type OLED Display with High Mobility Oxide TFT
47. 19-3: Late-News Paper: Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors
48. P-18: Improvement of Reliability in Coplanar a-IGZO TFTs by Multilayer SiO2 Gate Insulator
49. High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition
50. Scalable fabrication of flexible multi-level nanoimprinting molds with uniform heights via a ‘top-to-bottom’ level patterning sequence
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