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New emerging low‐dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state‐of‐the‐art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high‐throughput fabrication for large‐area and low‐cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X‐rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low‐dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low‐dimensional nanomaterials based photodetectors are also discussed. [ABSTRACT FROM AUTHOR]

Intracellular proteins with long lifespans have recently been linked to age-dependent defects, ranging from decreased fertility to the functional decline of neurons. Why long-lived proteins exist in metabolically active cellular environments and how they are maintained over time remains poorly understood. Here, we provide a system-wide identification of proteins with exceptional lifespans in the rat brain. These proteins are inefficiently replenished despite being translated robustly throughout adulthood. Using nucleoporins as a paradigm for long-term protein persistence, we found that nuclear pore complexes (NPCs) are maintained over a cell's life through slow but finite exchange of even its most stable subcomplexes. This maintenance is limited, however, as some nucleoporin levels decrease during aging, providing a rationale for the previously observed age-dependent deterioration of NPC function. Our identification of a long-lived proteome reveals cellular components that are at increased risk for damage accumulation, linking long-term protein persistence to the cellular aging process. PAPERCLIP:

Introduction: The role of inflammation in the pathophysiology of polycythemia vera (PV) is important. The presence of JAK2 mutations is important in the diagnosis of PV, and serum levels of erythropoietin (EPO) also play a supporting role. However, serum EPO levels show some limitations. The neutrophil‐to‐lymphocyte ratio (NLR) and platelet‐to‐lymphocyte ratio (PLR) are a readily available marker of inflammation. Thus, we examined whether NLR & PLR might diagnose PV in erythrocytosis patients. We compared NLR & PLR and EPO diagnostic values. Methods: We retrospectively reviewed clinical and laboratory data from two referral hospitals. Two hundred and eighty‐five patients with erythrocytosis who underwent a test for the JAK2 mutation were included. It wac classified as the PV group and the secondary polycythemia (SP) group. Results: The median NLR & PLR in the PV group (n = 70) was significantly higher than that in the SP group (n = 170) (NLR: 6.04 vs. 1.77, PLR: 283.18 vs. 101.56, respectively, p < 0.001). In the receiver operating characteristic analysis, the area under the curve of NLR & PLR was significantly higher than that of serum EPO (NLR vs EPO: 0.921 vs. 0.827, p = 0.003; PLR vs EPO: 0.917 vs 0.827, p = 0.003). Conclusion: In conclusion, NLR & PLR were higher in PV than in SP and showed better diagnostic value than serum EPO level, highlighting their potential as minor diagnostic criteria in patients with PV. [ABSTRACT FROM AUTHOR]

The stable operation behavior of thin-film transistors (TFTs) in pixel circuits under AC stress is crucial for high-performance active-matrix displays. However, conventional amorphous indium–gallium–zinc oxide (a-IGZO) TFTs exhibit a reduction in on-current (Ion) and the hump phenomenon of electrical characteristics when exposed to dynamic AC drain stress. In contrast, amorphous zinc–indium–tin oxide (a-ZITO) TFTs exhibit superior resistance to acceptor-like trap generation caused by impact ionization. The tetrahedral Zn site and strong chemical bonding of the Sn site in the a-ZITO network enhance defect tolerance against hot carriers, resulting in high stability against AC stress. This has been demonstrated through AC stress tests and capacitance–voltage (C–V) characterization for a-ZITOs with various Zn : In : Sn ratios of 2 : 1 : 1, 4 : 1 : 1, and 6 : 1 : 1. Compared to the Ion degradation rate of 69% for a-IGZO TFTs, the value significantly decreased to 15% by employing optimized a-ZITO with a synergistic composition ratio of 6 : 1 : 1. Overall, a-ZITO (6 : 1 : 1) TFTs exhibited high AC stress stability and a low threshold voltage shift of 0.4 V while maintaining high carrier mobilities of 10–11 cm2 V−1 s−1 with consistent performance regardless of the fabrication batch. [ABSTRACT FROM AUTHOR]