1. Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
- Author
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Yang, Tao, Sekely, Ben, Satapathy, Yashas, Allion, Greg, Barletta, Philip, Haber, Carl, Holland, Steve, Muth, John F., Pavlidis, Spyridon, and Stucci, Stefania
- Subjects
Physics - Instrumentation and Detectors ,High Energy Physics - Experiment - Abstract
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $\alpha$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
- Published
- 2024