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1. Mechanisms of Surfactin from Bacillus subtilis SF1 against Fusarium foetens: A Novel Pathogen Inducing Potato Wilt

Author

Lin Liu, Xiaofan Jin, Xiuhua Lu, Lizhong Guo, Peiwei Lu, Hao Yu, and Beibei Lv

Subjects
biocontrol, Fusarium wilt, antifungal mechanism, cell membrane permeability, protein expression differential, DNA binding, Biology (General), QH301-705.5
Abstract

Fusarium wilt is a severe and worldwide disease in potato cultivation. In this study, Fusarium foetens was first identified as the pathogen of potato wilt. Bacillus subtilis SF1 has the potential for controlling potato wilt induced by F. foetens, resulting in a mycelium growth inhibition of 52.50 ± 2.59% in vitro and a significant decrease in incidence rate by 45.56% in vivo. This research highlighted the antifungal activity of surfactin from B. subtilis SF1 and attempted to reveal the unknown antifungal mechanisms. Surfactin inhibited F. foetens mycelium growth beyond the concentration of 20 μg/μL. Surfactin-treated mycelium appeared to have morphological malformation. Surfactin enhanced reduced glutathione production and caused the increase in values of the extracellular fluids in OD260 and OD280. Surfactin induced differential protein expression and changed the genes’ transcription levels. Surfactin binds to fungal DNA via groove-binding mode, with a binding constant of Kb 2.97 × 104 M−1. Moreover, B. subtilis SF1 harbored genes encoding plant-promoting determinants, making potato seedlings grow vigorously. The results will help provide a comprehensive understanding of the mechanisms of surfactin against filamentous fungi and the application of surfactin-producing microbial in the biocontrol of plant pathogenic fungi.

Published
2023
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2. SiCN and Ta/TaN barriers for Cu/ultralow-k integration in 0.13´m technology

Author

D. H. Zhang, P. D. Foo, C. Y. Li, Peiwei Lu, and L. Y. Yang

Subjects
chemistry.chemical_classification, Interconnection, Materials science, Diffusion barrier, business.industry, Copper interconnect, Nanotechnology, Polymer, Barrier layer, chemistry, Breakdown voltage, Optoelectronics, Thermal stability, business, Leakage (electronics)
Abstract

Single damascene Cu lines using bi-layer Ta/TaN barrier with and without SiCN and plasma treatment for Cu-ultra low-k interconnect in 0.13μm technology have been investigated. It was found that the N2/H2 plasma treatment on the ULK surface before depositing barrier and Cu could reduce the line resistance significantly, but it also brought more surface defects on the sidewall and larger diffusion length. Compared with only Ta/TaN barrier layer structure, introduction of an additional SiCN layer could significantly improve the breakdown voltage, line to line leakage and thermal stability. This is because the thin SiCN layer not only effectively blocks diffusion of elements on both sides, but also significantly improves the mechanical property of the ultra low-k polymer.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Published
2004

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