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814 results on '"Pelzl, J."'

8. Photothermal Imaging Using Microwave Detection

Author

Pelzl, J., Netzelmann, U., Orth, Th., Kordecki, R., Tamir, Theodor, editor, Lotsch, Helmut K. V., editor, Murphy, John C., editor, Spicer, Jane W. Maclachlan, editor, Aamodt, Leonard C., editor, and Royce, Barrie S. H., editor

Published
1990
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30. Thermopower behavior for the shape memory alloy NiTi

Author

Lee, J.Y., McIntosh, G.C., Kaiser, A.B., Park, Y.W., Kaack, M., Pelzl, J., Kim, Chul Koo, and Nahm, Kyun

Subjects
Physics -- Research, Shape-memory alloys -- Research, Physics
Abstract

Research describing measurements of the thermoelectric power of nickel titanium alloy samples is presented. In particular the transition between austenitic and martensitic phases is investigated.

Published
2001

34. Study of the hot spot of an in-plane gate transistor by scanning Joule expansion microscopy

Author

Bolte, J., Niebisch, F., Pelzl, J., Stelmaszyk, P., and Wieck, A.D.

Subjects
Transistors -- Research, Semiconductors -- Thermal properties, Physics
Abstract

The local heat dissipation of an in-plane gate (IPG) transistor was studied through a thermally modulated scanning Joule expansion microscope. The spatial resolution of the constructed microscope was below 50 nm. Heat spots of the semiconductor were visualized by heating them with modulated drain voltage. The heat spot position and the temperature amplitude of the heat spot on the IPG transistor are dependent on the gate voltage.

Published
1998

35. Spectrally resolved modulated infrared radiometry of photothermal, photocarrier, and photoluminescence response of CdSe crystals: Determination of optical, thermal, and electronic transport parameters.

Author

Pawlak, M., Chirtoc, M., Horny, N., and Pelzl, J.

Subjects
ELECTRIC properties of cadmium selenide, INFRARED radiometry, MICROWAVE radiometry, PHOTOTHERMAL radiometry, PHOTOLUMINESCENCE measurement
Abstract

Spectrally resolved modulated infrared radiometry (SR-MIRR) with super-band gap photoexcitation is introduced as a self-consistent method for semiconductor characterization (CdSe crystals grown under different conditions). Starting from a theoretical model combining the contributions of the photothermal (PT) and photocarrier (PC) signal components, an expression is derived for the thermal-to-plasma wave transition frequency ftc which is found to be wavelength-independent. The deviation of the PC component from the model at high frequency is quantitatively explained by a quasi-continuous distribution of carrier recombination lifetimes. The integral, broad frequency band (0.1?Hz-1?MHz) MIRR measurements simultaneously yielded the thermal diffusivity a, the effective IR optical absorption coefficient βeff, and the bulk carrier lifetime τc. Spectrally resolved frequency scans were conducted with interchangeable IR bandpass filters (2.2-11.3?μm) in front of the detector. The perfect spectral match of the PT and PC components is the direct experimental evidence of the key assumption in MIRR that de-exciting carriers are equivalent to blackbody (Planck) radiators. The exploitation of the βspectrum measured by MIRR allowed determining the background (equilibrium) free carrier concentration n0. At the shortest wavelength (3.3?μm), the photoluminescence (PL) component supersedes the PC one and has distinct features. The average sample temperature influences the PC component but not the PT one. [ABSTRACT FROM AUTHOR]

Published
2016
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