27 results on '"Peng, Daqing"'
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2. Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology
3. Growth of high quality GaN on (0001) 4H-SiC with an ultrathin AlN nucleation layer
4. Growth of millimeter wave AlN/GaN heterostructures by MOCVD
5. Expression profiling of the phenylalanine ammonia-lyase ( PAL ) gene family in ginkgo biloba L.
6. Study on vdW Epitaxy Mechanism and Stress Modulation of Large-Size GaN Microwave Material.
7. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
8. Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD
9. Temperature dependence of the character of AlN nucleation layer grown on SiC substrates by MOCVD
10. Soil Anti-Scourabilities of Four Typical Herbaceous Plants and Their Responses to Soil Properties, Root Traits and Slope Position in Northeast China
11. Influence of the nucleation layer annealing atmosphere on the resistivity of GaN grown by metalorganic chemical vapor deposition
12. Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy
13. Enhancing the Cycling Stability by Tuning the Chemical Bonding between Phosphorus and Carbon Nanotubes for Potassium-Ion Battery Anodes
14. Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology
15. Multiple sclerosing hemangioma of the right lung in a 23‑year‑old female patient: A case report and review of the literature
16. Novel Fabrication Of N/S Co‐doped Hierarchically Porous Carbon For Potassium‐Ion Batteries
17. Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy
18. A 16 GS/s 3-Bit DAC Core in GaN HEMT Technology
19. Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor deposition
20. High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB
21. Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs
22. Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE
23. Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications
24. Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers
25. Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer
26. Influence of SiH4 treatment time on the properties of GaN films grown on in-situ SiNx patterned sapphire substrate
27. Association of T174M polymorphism of angiotensinogen gene with essential hypertension: a meta-analysis
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