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The advent of 6G communication demands seamlessly integrated terminals operating above 100 GHz with low power consumption for human-centric applications. In this work, we report high-performance, flexible radio-frequency (RF) transistors based on aligned carbon nanotube (CNT) arrays, achieving, for the first time, as-measured current gain cutoff frequency ($f_{\mathrm{T}}$) and power gain cutoff frequency ($f_{\mathrm{max}}$) both exceeding 100 GHz. Electro-thermal co-design improves both heat dissipation and RF performance, despite the low thermal conductivity of the flexible substrate. The transistors deliver 0.947 mA/ $\mathrm{\mu}$m on-state current and 0.728 mS/ $\mathrm{\mu}$m transconductance. Peak extrinsic $f_{\mathrm{T}}$ and $f_{\mathrm{max}}$ reach 152 GHz and 102 GHz, with low power consumption of 199 mW/mm and 147 mW/mm, respectively, setting new performance records for flexible CNT-based RF transistors by nearly $100\times$, outperforming all other flexible RF devices. Additionally, flexible RF amplifiers achieve output power of 64 mW/mm and power gain of 11 dB in the K-band (18 GHz), marking a significant milestone in the development of flexible RF technologies for next-generation wireless communication systems., Comment: 34 pages, 15 figures

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required continuous voltage application for programming gate terminal(s) in addition to the primary gate terminal, which undermines the advantages of reconfigurable devices in realizing compact and power-efficient integrated circuits. Here, we realize reconfigurable devices based on a single-gate field-effect transistor (FET) architecture by integrating semiconducting channels consisting of a monolayer film of highly aligned SWCNTs with a ferroelectric AlScN gate dielectric, all compatible with CMOS back-end-of-line (BEOL) processing. We demonstrated these SWCNT ferroelectric FETs (FeFETs) in a centimeter-scale array (~1 cm^2) comprising ~735 devices, with high spatial uniformity in device characteristics across the array. The devices exhibited ambipolar transfer characteristics with high on-state currents and current on/off ratios exceeding 10^5, demonstrating an excellent balance between electron and hole conduction (~270 {\mu}A/{\mu}m at a drain voltage of 3 V. When functioning as a non-volatile memory, the SWCNT FeFETs demonstrated large memory windows of 0.26 V/nm and 0.08 V/nm in the hole and electron conduction regions, respectively, combined with excellent retention behavior for up to 10^4 s. Repeated reconfiguration between p-FET and n-FET modes was also enabled by switching the spontaneous polarization in AlScN and operating the transistor within a voltage range below the coercive voltage. We revealed through circuit simulations that reconfigurable SWCNT transistors can realize ternary content-addressable memory (TCAM) with far fewer devices compared to circuits based on silicon CMOS technology or based on resistive non-volatile devices., Comment: 37 pages, 16 figures (5 main and 11 supplementary figures)

Telecommunications and polarimetry both require the active control of the polarization of light, Currently, this is done by combining intrinsically anisotropic materials with tunable isotropic materials into heterostructures using complicated fabrication techniques due to the lack of scalable materials that possess both properties. Tunable birefringent and dichromic materials are scarce and rarely available in high-quality thin films over wafer scales. In this paper, we report semiconducting, highly aligned, single-walled carbon nanotubes (SWCNTs) over 4" wafers with normalized birefringence and dichroism values 0.09 and 0.58, respectively. The real and imaginary parts of the refractive index of the SWCNT films are tuned by up to 5.9% and 14.3% in the infrared at 2200 nm and 1660 nm, respectively, using electrostatic doping. Our results suggest that aligned SWCNTs are among the most anisotropic and tunable optical materials known and opens new avenues for their application in integrated photonics and telecommunications.

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully., Comment: 15 pages, 3 figures

Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but their realization remains challenging. Here we show that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ~7 V in ~100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ~10^6 A cm^-2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal-insulator-metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm^-2 and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip alternative to thermionic emission sources., Comment: 15 pages, 3 figures, supporting informations, submitted to Advanced Electronic Materials on March 6th 2018

The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode in a traditional internal photoemission measurement, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of InAs and GaSb valence band to the bottom of Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of Al2O3 valence band to the bottom of InAs and GaSb conduction band. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted model of electron quantum tunneling efficiency and transistor performance., Comment: 6 figures