1. Gate‐Tunable Spectral Response in β‐Ga2O3/Te Hybrid Photogating Structure for Ultrasensitive Broadband Detection.
- Author
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Liu, Weijie, Peng, Meng, Yu, Yiye, Zheng, Zhihua, Jian, Pengcheng, Zhao, Yongming, Zeng, Yuhui, Xu, Dan, Chen, Maohua, Luo, Yuang, Chen, Changqing, Dai, Jiangnan, and Wu, Feng
- Subjects
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SPECTRAL sensitivity , *OPTICAL communications , *OPTOELECTRONIC devices , *GALLIUM , *TELLURIUM , *PHOTOTRANSISTORS , *INDIUM gallium zinc oxide , *VOLTAGE - Abstract
The increasing demand for multispectral information acquisition and the complexity of application environments have sparked a growing interest in broadband detection. However, achieving a high level of responsivity across a wide response range remains a significant challenge. Herein, an ultrasensitive broadband phototransistor based on hybrid photogating (HPG) structure is demonstrated, which consisted of a quasi‐2D beta‐phase gallium oxide (β‐Ga2O3) nanoflake as the carrier transport channel and a tellurium (Te) nanoflake as the photogating layer. Attributed to the strong doping influence of the Te nanoflake, a low off‐state current of pA level and a high on/off current ratio of ≈108 are obtained. Upon 255 nm wavelength illumination, the device exhibited an ultrahigh responsivity up to 3.82 × 106 A W−1 and a detectivity as high as 1.59 × 1014 Jones across a large gate voltage range. Notably, an exciting infrared response is obtained with a responsivity of 138 A W−1 and a detectivity of 3.70 × 109 Jones under the 1550 nm wavelength illumination, exclusively achievable when the gate voltage exceeded 4 V. Leveraging the gate‐tunable spectral response, an innovative model for secure optical communication was proposed. This work presents an efficient and feasible strategy for fabricating multifunctional optoelectronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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