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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.

Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like linearly dispersive surface state bands are observed on the 001 surface of BiSe and Sb doped BiSe, similar to Bi2Se3. Moreover, the lower part of the SSBs buries deep in the bulk valence band. Overlap region between the SSBs and BVB is large in Sb doped system and the SSBs deviate from the Dirac like linear dispersion in this region. These results highlight the role of interlayer coupling between the Bi bilayer and the Bi2Se3 QLs. Furthermore, we observed a large intensity imbalance in the SSBs located at the positive and negative k parallel directions. This asymmetry pattern gradually reverses as the excitation energy scans from low 14eV to high 34eV value. However, we did not observe signal of surface magnetization resulting from the intensity imbalance in SSBs due to hole-generated uncompensated spin accumulation in the photoexcitation process. The main reason for this could be the faster relaxation process for photo hole due to the presence of the Bi bilayer between the adjacent Bi2Se3 QLs. The observed photon energy dependent intensity variation could be a signature of the mixing between the spin and the orbit texture of the SSBs.

Topological superconductivity is an exotic phase of matter in which the fully gapped superconducting bulk hosts gapless Majorana surface states protected by topology. Intercalation of copper, strontium or niobium between the quintuple layers of the topological insulator Bi$_2$Se$_3$ increases the carrier density and leads to superconductivity that is suggested to be topological. Here we study the electronic structure of strontium-intercalated Bi$_2$Se$_3$ using angle resolved photoemission spectroscopy (ARPES) and Shubnikov-de Haas (SdH) oscillations. Despite the apparent low Hall number of $\sim2 \times 10 ^{19}$cm$^{-3}$, we show that the Fermi surface is shaped as an open cylinder with a larger carrier density of $\sim 10 ^{20}$cm$^{-3}$. We suggest that superconductivity in intercalated Bi$_2$Se$_3$ emerges with the appearance of a quasi-2D open Fermi surface.

High-temperature superconducting cuprates exhibit an intriguing phenomenology for the low-energy elementary excitations. In particular, an unconventional temperature dependence of the coherent spectral weight (CSW) has been observed in the superconducting phase by angle-resolved photoemission spectroscopy (ARPES), both at the antinode where the d-wave paring gap is maximum, as well as along the gapless nodal direction. Here, we combine equilibrium and time-resolved ARPES to track the temperature dependent meltdown of the nodal CSW in Bi-based cuprates with unprecedented sensitivity. We find the nodal suppression of CSW upon increasing temperature to be ubiquitous across single- and double-layer Bi cuprates, and uncorrelated to superconducting and pseudogap onset temperatures. We quantitatively model both the lineshape of the nodal spectral features and the anomalous suppression of CSW within the Fermi-Liquid framework, establishing the key role played by the normal state electrodynamics in the description of nodal quasiparticles in superconducting cuprates., Comment: 6 pages, 3 figures; Supplementary Materials available upon request

Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas., Comment: 22 pages, 4 Figures

By using angle-resolved photoemission spectroscopy (ARPES), the variation of the electronic structure of HfSe$_2$ has been studied as a function of sodium intercalation. We observe how this drives a band splitting of the p-orbital valence bands and a simultaneous reduction of the indirect band gap by values of up to 400 and 280 meV respectively. Our calculations indicate that such behaviour is driven by the band deformation potential, which is a result of our observed anisotropic strain induced by sodium intercalation. The applied uniaxial strain calculations based on density functional theory (DFT) agree strongly with the experimental ARPES data. These findings should assist in studying the physical relationship between doping and strain, as well as for large-scale two-dimensional straintronics., Comment: 6 pages, 4 figures

Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized synchrotron radiation (SR) is followed by the hole-generated uncompensated spin accumulation and the SR-induced magnetization via the spin-torque effect. We show that the photoexcitation of the DC is asymmetric, that it varies with the photon energy, and that it practically does not change during the relaxation. We find a relation between the photoexcitation asymmetry, the generated spin accumulation and the induced spin polarization of the DC and V 3d states. Experimentally the SR-generated in-plane and out-of-plane magnetization is confirmed by the $k_{\parallel}$-shift of the DC position and by the splitting of the states at the Dirac point even above the Curie temperature. Theoretical predictions and estimations of the measurable physical quantities substantiate the experimental results., Comment: 17 pages, 8 figures

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band-structure and large spin-orbit gap. Recently it was shown that copper intercalated Bi2Se3 becomes superconducting and it was suggested as a realization of a topological superconductor (TSC). Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved photoemission spectroscopy (ARPES) to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes 2D-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3., Comment: 5 pages, 5 figures

We report photoemission experiments revealing the valence electron spectral function of Mn, Fe, Co and Ni atoms on the Ag(100) surface. The series of spectra shows splittings of higher energy features which decrease with the filling of the 3d shell and a highly non-monotonous evolution of spectral weight near the Fermi edge. First principles calculations demonstrate that two manifestations of Hund's exchange $J$ are responsible for this evolution. First, there is a monotonous reduction of the effective exchange splittings with increasing filling of the 3d shell. Second, the amount of charge fluctuations and, thus, the weight of quasiparticle peaks at the Fermi level varies non-monotonously through this 3d series due to a distinct occupancy dependence of effective charging energies $U_{\rm eff}$., Comment: 5 pages, 3 figures

Adsorption of organic molecules on well-oriented single crystal coinage metal surfaces fundamentally affects the energy distribution curve of ultra-violet photoelectron spectroscopy spectra. New features not present in the spectrum of the pristine metal can be assigned as "interface states" having some degree of molecule-substrate hybridization. Here it is shown that interface states having molecular orbital character can easily be identified at low binding energy as isolated features above the featureless substrate sp-plateau. On the other hand much care must be taken in assigning adsorbate-induced features when these lie within the d-band spectral region of the substrate. In fact, features often interpreted as characteristic of the molecule-substrate interaction may actually arise from substrate photoelectrons scattered by the adsorbates. This phenomenon is illustrated through a series of examples of noble-metal single-crystal surfaces covered by monolayers of large pi-conjugated organic molecules.

We present an Angle-Resolved PhotoElectron Spectroscopy study of the changes in the electronic structure of electron doped Ba(Fe(1-x)Co(x))2As2 across the superconducting phase transition. By changing the polarization of the incoming light, we were able to observe the opening of the gap for the inner hole pocket alpha, and to compare its behavior with the outer hole-like band beta. Measurements along high symmetry directions show that the behavior of beta is consistent with an isotropic gap opening, while slight anisotropies are detected for the inner band alpha. The implications of these results for the s+/- symmetry of the superconducting order parameter are discussed, in relation to the nature of the different iron orbitals contributing to the electronic structure of this multiband system., Comment: 5 pages; Accepted for publication in Phys. Rev. B

Neutron and x-ray scattering experiments have provided mounting evidence for spin and charge ordering phenomena in underdoped cuprates. These range from early work on stripe correlations in Nd-LSCO to the latest discovery of charge-density-waves in YBCO. Both phenomena are characterized by a pronounced dependence on doping, temperature, and an externally applied magnetic field. Here we show that these electron-lattice instabilities exhibit also a previously unrecognized bulk-surface dichotomy. Surface-sensitive electronic and structural probes uncover a temperature-dependent evolution of the CuO2 plane band dispersion and apparent Fermi pockets in underdoped Bi2201, which is directly associated with an hitherto-undetected strong temperature dependence of the incommensurate superstructure periodicity below 130K. In stark contrast, the structural modulation revealed by bulk-sensitive probes is temperature independent. These findings point to a surface-enhanced incipient charge-density-wave instability, driven by Fermi surface nesting. This discovery is of critical importance in the interpretation of single-particle spectroscopy data and establishes the surface of cuprates and other complex oxides as a rich playground for the study of electronically soft phases., Comment: A high-resolution version with supplementary material can be found at http://www.physics.ubc.ca/~quantmat/ARPES/PUBLICATIONS/Articles/Bi2201_PG_Q2.pdf

We report photoemission experiments revealing the full valence electron spectral function of Ce adatoms on Ag(111), W(110) and Rh(111) surfaces. A transfer of Ce 4f spectral weight from the ionization peak towards the Fermi level is demonstrated upon changing the substrate from Ag(111) to Rh(111). In the intermediate case of Ce on W(110) the ionization peak is found to be split. This evolution of the spectra is explained by means of first-principles theory which clearly demonstrates that a reliable understanding of magnetic adatoms on metal surfaces requires simultaneous low and high energy spectroscopic information., Comment: 4 pages, 3 figures

Chemical bonding in molecules and solids arises from the overlap of valence electron wave functions, forming extended molecular orbitals and dispersing Bloch states, respectively. Core electrons with high binding energies, on the other hand, are localized to their respective atoms and their wave functions do not overlap significantly. Here we report the observation of band formation and considerable dispersion (up to 60 meV) in the $1s$ core level of the carbon atoms forming graphene, despite the high C $1s$ binding energy of $\approx$ 284 eV. Due to a Young's double slit-like interference effect, a situation arises in which only the bonding or only the anti-bonding states is observed for a given photoemission geometry., Comment: 12 pages, 3 figures, including supplementary material

In previous work on adsorbate-induced surface core level shifts (SCLSs), the effects caused by O atom adsorption on Rh(111) and Ru(0001) were found to be additive: the measured shifts for first layer Ru atoms depended linearly on the number of directly coordinated O atoms. Density-functional theory calculations quantitatively reproduced this effect, allowed separation of initial and final state contributions, and provided an explanation in terms of a roughly constant charge transfer per O atom. We have now conducted similar measurements and calculations for three well-defined adsorbate and coadsorbate layers containing O and H atoms: (1 x 1)-H, (2 x 2)-(O+H), and (2 x 2)-(O+3H) on Ru(0001). As H is stabilized in fcc sites in the prior two structures and in hcp sites in the latter, this enables us to not only study coverage and coadsorption effects on the adsorbate-induced SCLSs, but also the sensitivity to similar adsorption sites. Remarkably good agreement is obtained between experiment and calculations for the energies and geometries of the layers, as well as for all aspects of the SCLS values. The additivity of the next-neighbor adsorbate-induced SCLSs is found to prevail even for the coadsorbate structures. While this confirms the suggested use of SCLSs as fingerprints of the adsorbate configuration, their sensitivity is further demonstrated by the slightly different shifts unambiguously determined for H adsorption in either fcc or hcp hollow sites., Comment: 9 pages including 4 figures; related publications can be found at http://www.fhi-berlin.mpg.de/th/th.html

The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation and the evolution of the electronic properties with oxidation or reduction of the porphyrins in supramolecular donor-acceptor complexes used in photovoltaic devices., Comment: text 11 pages, 4 figures submitted for publication

Direct comparison of scanning tunneling microscopy and high resolution core level photo-emission experiments provides a rationale for the mechanism of formation of a two dimensional (2D) binary alloy (1/3 mono-layer (ML) Sn(1- x)Six/Si(111)-\sqrt3X\sqrt3R30). In contrast with recent theoretical predictions, the pure metal surface (x=0) results partitioned into two classes (2/9 ML and 1/9 ML) of ad-atoms occupying non-equivalent T4 sites. During the formation of the alloy, Si ad-atoms preferably occupy the majority type adsorption site. This peculiar substitution mechanism leads to a mutual arrangement of ad-atoms which is not random even at room temperature, but shows the typical short range order universally observed in 2D and quasi 2D binary alloys, Comment: pdf only- 5 pages 3 figures. submitted to Phys. Rev. Lett

Growing attention has been drawn in the past years to the \alpha-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry. Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts' universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (\sqrt3 x \sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model., Comment: replaced Fig. 2

At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure has been explored by photoelectron diffraction experiments performed at the ALOISA beamline of the Elettra storage ring in Trieste (Italy). The modulation of the intensities of the two Sn components, caused by the backscattering of the underneath Ge atoms, has been measured as a function of the emission angle at fixed kinetic energies and viceversa. The bond angle between Sn and its nearest neighbour atoms in the first Ge layer (Sn-Ge1) has been measured by taking polar scans along the main symmetry directions and it was found almost equivalent for the two components. The corresponding bond lengths are also quite similar, as obtained by studying the dependence on the photoelectron kinetic energy, while keeping the photon polarization and the collection direction parallel to the Sn-Ge1 bond orientation (bond emission). A clear difference between the two bonding sites is observed when studying the energy dependence at normal emission, where the sensitivity to the Sn height above the Ge atom in the second layer is enhanced. This vertical distance is found to be 0.3 Angstroms larger for one Sn atom out of the three contained in the lattice unit cell. The (3x3)-Sn/Ge(111) is thus characterized by a structure where the Sn atom and its three nearest neighbour Ge atoms form a rather rigid unit that presents a strong vertical distortion with respect to the underneath atom of the second Ge layer., Comment: 10 pages with 9 figures, added references