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We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic compression. We clearly show signatures of two iso-structural transition at 2 GPa and 4 GPa obtained from the minima in c/a ratio concomitant with the phonon linewidth anomalies of Eg and A1g modes at around the same pressures, providing strong indication of unusual electron-phonon coupling associated to these transitions. Resistivity presents nonlinear behavior over similar pressure ranges providing a strong indication of the electronic origin of these pressure driven isostructural transitions. Our data thus provide clear evidences of topological changes at A and L point of the Brillouin zone predicted to be present in the compressed 1T-TiTe2. Between 4 GPa and 8 GPa, the c/a ratio shows a plateau suggesting a transformation from an anisotropic 2D layer to a quasi 3D crystal network. First principles calculations suggest that the 2D to quasi 3D evolution without any structural phase transitions is mainly due to the increased interlayer Te-Te interactions (bridging) via the charge density overlap. In addition to the pressure dependent isostructural phase transitions, our data also evidences the occurrence of a first order structural phase transition from the trigonal (P-3m1) phase at higher pressures. We estimate the start of this structural phase transition to be 8 GPa and the symmetric of the new high-pressure phase to be monoclinic (C2/m)., Comment: 22 pages, 11 Figures, 2 Tables

Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy, resistivity and the available literature on the x-ray diffraction studies. In this report, the vibrational and the transport properties of Sb2S3 have been studied up to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes Ag(2), Ag(3) and B2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies also shows an anomaly around this pressure. The changes in resistivity as well as Raman line widths can be ascribed to the changes in the topology of the Fermi surface which induces the electron-phonon and the strong phonon-phonon coupling, indicating a clear evidence of the electronic topological transition (ETT) in Sb2S3. The pressure dependence of a/c ratio plot obtained from the literature showed a minimum at ~ 5 GPa, which is consistent with our high pressure Raman and resistivity results. Finally, we give the plausible reasons for the non-existence of a non-trivial topological state in Sb2S3 at high pressures., Comment: 24 pages, 6 Figures, 2 tables submitted for publication

Single-phase samples of Yb4LiGe4 and Yb5Ge4 were synthesized using high frequency (HF) heat treatment. Yb4LiGe4 crystallizes in orthorhombic space group Pnma with the Gd5Si4 type of crystal structure and lattice parameters a = 7.0571(1) Angs, b = 14.6239(1) Angs, and c = 7.6155(1) Angs. One Yb position in Yb5Ge4 is substituted by the lithium atom and causes a distortion of the germanium tetragons in Yb4LiGe4. Investigation of the electronic state of Yb via magnetic susceptibility and X-ray absorption near-edge spectroscopy (XANES) revealed a presence of two electronic states of ytterbium, 4f13 and 4f14 (mixed valence), in Yb5Ge4 and Yb4LiGe4. Studies of the temperature dependence of the electrical resistivity, magnetization, 7Li spin-lattice relaxation rate and the specific heat indicate that strong electronic correlations are present in Yb4LiGe4, and below approximately 50 K there is a competition between ferromagnetic and antiferromagnetic correlations. Magnetic ordering in Yb4LiGe4, if present, occurs below the reported antiferromagnetic transition temperature of 1.7 K for Yb5Ge4., Comment: 27 Pages, 9 figures, Uncder review