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Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage profiles was studied by in-situ spectroscopic ellipsometry (SE) for the accurate tracking and evaluation of void and damage fractions in crystalline Ge during implantation of 200-keV Sb ions with a total fluence up to 1E16 cm-2 and an ion flux of 2.1E12 cm-2 s-1. The consecutive stages of damage accumulation were identified using optical multi-layer models with quantitative parameters of the thickness of modified layers as well as the volume fractions of amorphized material and voids. The effective size of damaged zones formed from ion tracks initiated by individual bombarding ions can be estimated by numerical simulation compared with the dynamics of damage profiles measured by ion beam analysis and ellipsometry. According to our observations, the formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of about 1E15 cm-2, leading to a high volume fraction of voids and a modified layer thickness of approx. 200 nm by the end of the irradiation process. This agrees with the results of numerical simulations and complementary scanning electron microscopy (SEM) measurements. In addition, we found a quasi-periodic time dependent behavior of amorphization and void formation represented by alternating accelerations and decelerations of different reorganization processes, respectively., Comment: 23 pages, 8 figures

Spectroscopic ellipsometry is a sensitive and optical model-supported quantitative tool to monitor interfaces. In this work, solid-liquid interfaces are studied using the Kretschmann-Raether configuration for biosensing applications. The interface layers support two purposes simultaneously: (i) chemical suitability for the adsorption of molecules to be detected and (ii) the optical enhancement of the signal to increase the sensitivity. Ellipsometry is not only used as a sensor but also as a quantitative measurement tool to study and understand the interface phenomena, and to develop the sensing layers for the largest possible optical sensitivity. Plasmonic and structured layers are of primary importance in terms of optical sensitivity. Layers structured both in lateral and vertical directions have been studied. Optical models based on both the transfer matrix and the finite element method were developed and used for the structural analysis where the material and geometrical derivatives are used in the inverse fitting process of the model data to the measurement. Structures utilizing plasmonic, diffraction, multilayer field enhancement, and other methods were analyzed as possible candidates for the improvement of the optical performance of the cell. Combinatorial and periodic plasmonic surface structures were developed to enhance the sensitivity of in-situ ellipsometry at solid-liquid interfaces utilizing the Kretschmann-Raether (KR) geometry. Ag$_x$Al$_{1-x}$ layers with variable compositions and Au layers with changing periods and critical dimensions were investigated to improve the performance of sensors based on the KR arrangement., Comment: 9 pages, 3 figures, SPIE Photonics West conference contribution

The behavior of single layer van der Waals (vdW) materials is profoundly influenced by the immediate atomic environment at their surface, a prime example being the myriad of emergent properties in artificial heterostructures. Equally significant are adsorbates deposited onto their surface from ambient. While vdW interfaces are well understood, our knowledge regarding atmospheric contamination is severely limited. Here we show that the common ambient contamination on the surface of: graphene, graphite, hBN and MoS2 is composed of a self-organized molecular layer, which forms during a few days of ambient exposure. Using low-temperature STM measurements we image the atomic structure of this adlayer and in combination with infrared spectroscopy identify the contaminant molecules as normal alkanes with lengths of 20-26 carbon atoms. Through its ability to self-organize, the alkane layer displaces the manifold other airborne contaminant species, capping the surface of vdW materials and possibly dominating their interaction with the environment.

Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they efficiently confine carriers, without inducing significant inter-valley scattering. This soft confinement, allows the low-loss lateral ultra-confinement of graphene plasmons, scaling up their resonance frequency from native terahertz to commercially relevant visible range. Visible graphene plasmons localized into nanocorrugations mediate several orders of magnitude stronger light-matter interactions (Raman enhancement) than those previously achieved with graphene, enabling the detection of specific molecules from femtomolar solutions or ambient air. Moreover, nanocorrugated graphene sheets also support propagating visible plasmon modes revealed by scanning near-field optical microscopy observation of their interference patterns.