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Modification of the electronic structure of quantum matter by ad atom deposition allows for directed fundamental design of electronic and magnetic properties. This concept is utilized in the present work in order to tune the surface electronic structure of magnetic topological insulators based on MnBi2Te4. The topological bands of these systems are typically strongly electron-doped and hybridized with a manifold of surface states that places the salient topological states out of reach of electron transport and practical applications. In this work, micro-focused angle-resolved photoemission spectroscopy (microARPES) provides direct access to the termination-dependent dispersion of MnBi2Te4and MnBi4Te7during in situ deposition of rubidium atoms. The resulting band structure changes are found to be highly complex, encompassing coverage-dependent am-bipolar doping effects, removal of surface state hybridization and the collapse of a surface state band gap. In addition, a doping-dependent band bending is found to give rise to tunable quantum well states. This wide range of observed electronic structure modifications could provide new ways to exploit the topological states and the rich surface electronic structures of manganese bismuthtellurides.

The electronic structure of NdTe3 in the charge density wave phase (CDW) is investigated by angle-resolved photoemission spectroscopy. The combination of high-quality crystals and careful surface preparation reveals subtle and previously unobserved details in the Fermi surface topology, allowing an interpretation of the rich and unexplained quantum oscillations in the rare earth tritellurides RTe3. In particular, several closed Fermi surface elements can be observed that are related to CDW-induced replicas of the original bands, leading to the curious situation in which a CDW does not only remove Fermi surface elements but creates new ones that are observable in transport experiments. Moreover, a large residual Fermi surface is found in the CDW gap, very close to the position of the gapped normal-state Fermi surface. Its area agrees very well with high-frequency quantum oscillations in NdTe3 and its presence is explained by either a phase separation between normal state and CDW regions or by strong electron-phonon coupling combined with the quasi one-dimensional character of the CDW. Finally, we identify the origin of the low-frequency α quantum oscillations ubiquitous for the lighter R elements in the RTe3 family and responsible for the high mobility in these compounds.

Sandwich-molecular wires consisting of europium and cyclooctatetraene (Cot) were grown in situ on the moiré of graphene with Ir(110). The moiré templates a uniaxial alignment of monolayer EuCot nanowire carpets and multilayer films with the EuCot wire axis along the [001] direction of the Ir substrate. Using angle-resolved photoemission spectroscopy, we investigate the band structure of the wire carpet films. While π-derived bands were not observed experimentally, we find a flat band 1.85 eV below the Fermi energy. Using density-functional theory and X-ray photoelectron spectroscopy and replacing europium through barium in the sandwich-molecular wires, it is concluded that the flat band is derived from Eu 4f states weakly mixed with Eu 5d states and slightly overlapping with Cot π states. X-ray magnetic circular dichroism is employed to characterize the magnetic properties of the EuCot wire carpet films at low temperatures. Clear evidence for an easy-axis magnetization along the wires is found.

Physical review / B 106(20), L201409 (2022). doi:10.1103/PhysRevB.106.L201409, X-ray photoelectron diffraction is a powerful tool for determining the structure of clean and adsorbate-covered surfaces. Extending the technique into the ultrafast time domain will open the door to studies as diverse as the direct determination of the electron-phonon coupling strength in solids and the mapping of atomic motion in surface chemical reactions. Here we demonstrate time-resolved photoelectron diffraction using ultrashort soft x-ray pulses from the free electron laser FLASH. We collect Se $3d$ photoelectron diffraction patterns over a wide angular range from optically excited Bi$_2$Se$_3$ with a time resolution of 140 fs. Combining these with multiple scattering simulations allows us to track the motion of near-surface atoms within the first 3 ps after triggering a coherent vibration of the $A_{1g}$ optical phonons. Using a fluence of $4.2mJ/cm^2$ from a 1.55 eV pump laser, we find the resulting coherent vibrational amplitude in the first two interlayer spacings to be on the order of 0.01 Å., Published by Inst., Woodbury, NY

Background Axonal myelination is an important maturation process in the developing brain. Increasing myelin content correlates with the longitudinal relaxation rate (R1=1/T1) in magnetic resonance imaging (MRI). Objective By using magnetization-prepared 2 rapid acquisition gradient echoes (MP2RAGE) on a 3-T MRI system, we provide R1 values and myelination rates for infants and young children. Materials and methods Average R1 values in white and grey matter regions in 94 children without pathological MRI findings (age range: 3 months to 6 years) were measured and fitted by a saturating-exponential growth model. For comparison, R1 values of 36 children with different brain pathologies are presented. The findings were related to a qualitative evaluation using T2, magnetization-prepared rapid acquisition gradient echo (MP-RAGE) and MP2RAGE. Results R1 changes rapidly in the first 16 months of life, then much slower thereafter. R1 is highest in pre-myelinated structures in the youngest subjects, such as the posterior limb of the internal capsule (0.74–0.76±0.04 s−1) and lowest for the corpus callosum (0.37–0.44±0.03 s−1). The myelination rate is fastest in the corpus callosum and slowest in the deep grey matter. R1 is decreased in hypo- and dysmyelination disorders. Myelin maturation is clearly visible on MP2RAGE, especially in the first year of life. Conclusion MP2RAGE permits a quantitative R1 mapping method with an examination time of approximately 6 min. The age-dependent R1 values for children without MRI-identified brain pathologies are well described by a saturating-exponential function with time constants depending on the investigated brain region. This model can serve as a reference for this age group and to search for indications of subtle pathologies. Moreover, the MP2RAGE sequence can also be used for the qualitative assessment of myelinated structures.

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected between the layers, with their interaction being dominated by charge transfer. In contrast to this well-established picture, we show that interlayer coupling can strongly influence the electronic properties of one type of layer in a misfit structure, in a similar way to the creation of modified band structures in an artificial moir\'e structure between two-dimensional materials. Using angle-resolved photoemission spectroscopy with a micron-scale light focus, we selectively probe the electronic properties of hexagonal NbSe$_2$ and square BiSe layers that terminate the surface of the (BiSe)$_{1+\delta}$NbSe$_2$ misfit compound. We show that the band structure in the BiSe layers is strongly affected by the presence of the hexagonal NbSe$_2$ layers, leading to quasi one-dimensional electronic features. The electronic structure of the NbSe$_2$ layers, on the other hand, is hardly influenced by the presence of the BiSe. Using density functional theory calculations of the unfolded band structures, we argue that the preferred modification of one type of bands is mainly due to the atomic and orbital character of the states involved, opening a promising way to design novel electronic states that exploit the partially incommensurate character of the misfit compounds.

Total-energy and electronic structure calculations based on density-functional theory are performed in order to determine the atomic structure and electronic properties of Al0.5In0.5P(001) surfaces. It is found that most of the stable surfaces obey the electron counting rule and are characterized by surface atom dimerization. The dimer related surface states are predicted to occur in the vicinity of the bulk band edges. For a very narrow range of preparation conditions, ab initio thermodynamics predicts metal atomic wires formed by surface cations. In case of typical metalorganic vapor-phase epitaxy growth conditions, a surface covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms are hydrogen-saturated, is found to be stable. The occurrence of this structure is confirmed by low energy electron diffraction and X-ray photoelectron spectroscopy data measured on epitaxially grown Al0.52In0.48P(001) epilayers lattice matched to GaAs.

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moir\'e with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110)., Comment: 34 pages, 14 figures

We report on temperature-dependent soft X-ray absorption spectroscopy (XAS) measurements utilizing linearly polarized synchrotron radiation to probe magnetic phase transitions in iron-rich Fe1+yTe. X-ray magnetic linear dichroism (XMLD) signals, which sense magnetic ordering processes at surfaces, start to increase monotonically below the N\'eel temperature TN = 57 K. This increase is due to a progressive bicollinear antiferromagnetic (AFM) alignment of Fe spins of the monoclinic Fe1+yTe parent phase. This AFM alignment was achieved by a [100]-oriented biasing field favoring a single-domain state during cooling across TN. Our specific heat and magnetization measurements confirm the bulk character of this AFM phase transition. On longer time scales, however, we observe that the field-biased AFM state is highly unstable even at the lowest temperature of T = 3 K. After switching off the biasing field, the XMLD signal decays exponentially with a time constant {\tau} = 1506 s. The initial XMLD signal is restored only upon repeating a cycle consisting of heating and field-cooling through TN. We explain the time effect by a gradual formation of a multi-domain state with 90 deg rotated AFM domains, promoted by structural disorder, facilitating the motion of twin-domains. Significant disorder in our Fe1+yTe sample is evident from our X-ray diffraction and specific heat data. The stability of magnetic phases in Fe-chalcogenides is an important material property, since the Fe(Te1-xSex) phase diagram shows magnetism intimately connected with superconductivity., Comment: Conference proceeding for JEMS 2020

Collective electronic states such as the charge density wave (CDW) order and superconductivity (SC) respond sensitively to external perturbations. Such sensitivity is dramatically enhanced in two dimensions (2D), where 2D materials hosting such electronic states are largely exposed to the environment. In this regard, the ineludible presence of supporting substrates triggers various proximity effects on 2D materials that may ultimately compromise the stability and properties of the electronic ground state. In this work, we investigate the impact of proximity effects on the CDW and superconducting states in single-layer (SL) NbSe2 on four substrates of diverse nature, namely, bilayer graphene (BLG), SL-boron nitride (h-BN), Au(111), and bulk WSe2. By combining low-temperature (340 mK) scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we compare the electronic structure of this prototypical 2D superconductor on each substrate. We find that, even when the electronic band structure of SL-NbSe2 remains largely unaffected by the substrate except when placed on Au(111), where a charge transfer occurs, both the CDW and SC show disparate behaviors. On the insulating h-BN/Ir(111) substrate and the metallic BLG/SiC(0001) substrate, both the 3 × 3 CDW and superconducting phases persist in SL-NbSe2 with very similar properties, which reveals the negligible impact of graphene on these electronic phases. In contrast, these collective electronic phases are severely weakened and even absent on the bulk insulating WSe2 substrate and the metallic single-crystal Au(111) substrate. Our results provide valuable insights into the fragile stability of such electronic ground states in 2D materials.

The bulk band structure of the topological insulator Sb

In this work we prove that ordered single-layer MoS2 can be grown epitaxially on Ag(110), despite the different crystalline geometry of adsorbate and substrate. A comprehensive investigation of electronic and structural features of this interface is carried out by combining several techniques. Photoelectron diffraction experiments show that only two mirror crystalline domains coexist in equal amount in the grown layer. Angle-resolved valence band photoelectron spectroscopy shows that MoS2 undergoes a semiconductor-to-metal transition. Low-energy electron diffraction and scanning-tunneling microscopy experiments reveal the formation of a commensurate moiré superlattice at the interface, which implies an anisotropic uniaxial strain of the MoS2 crystalline lattice of ca. 3% in the [110] direction of the Ag(110) surface. These outcomes suggest that the epitaxial growth on anisotropic substrates might be an effective and scalable method to generate a controlled and homogeneous strain in MoS2 and possibly other transition-metal dichalcogenides.

Funding: RBJ acknowledges the UK's Engineering and Physical Sciences Research Council (EPSRC) for partial funding for this activity (EP/H020055/1) as well as The EC's Horizon 2020 Programme for support from the “GREENDIAMOND” project (ID: 640947). This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, “QuSpin”, and through the Fripro program, Project No. 250985 “FunTopoMat” and 262339 “NEAT”. This work was supported by the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029 and DFF-6108-00409) and by VILLUM FONDEN via the Centre of Excellence for Dirac Materials (Grant No. 11744) and the Aarhus University Research Foundation. Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement. Publisher PDF

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states., Comment: 10 pages, 4 figures

Funding: We gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant. No.15375) and the Centre of Excellence for Dirac Materials (Grant. No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant Nos. DFF-9064-00057B and DFF-6108-00409) and the Aarhus University Research Foundation. This work is also supported by National Research Foundation (NRF) grants funded by the Korean government (nos. NRF-2020R1A2C200373211 and 2019K1A3A7A09033389) and by the International MaxPlanck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM). The authors also acknowledge The Royal Society and The Leverhulme Trust. R.S acknowledges financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-108-2112-M-001-049-MY2 & MOST 109-2124-M-002-001 and Sinica funded i-MATE financial Support AS-iMATE-109-13. Access to the Artemis Facility was funded by STFC. The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Fermi surfaces, three-dimensional (3D) abstract interfaces that define the occupied energies of electrons in a solid, are important for characterizing and predicting the thermal, electrical, magnetic, and optical properties of crystalline metals and semiconductors [1]. Angle-resolved photoemission spectroscopy (ARPES) is the only technique directly probing the Fermi surface by measuring the Fermi momenta ( kF ) from energy- and angular distribution of photoelectrons dislodged by monochromatic light [2]. Existing electron analyzers are able to determine a number of kF -vectors simultaneously, but current technical limitations prohibit a direct high-resolution 3D Fermi surface mapping. As a result, no such datasets exist, strongly limiting our knowledge about the Fermi surfaces and restricting a detailed comparison with the widely available nowadays calculated 3D Fermi surfaces. Here we show that using a simpler instrumentation, based on the Fourier electron optics combined with a retardation field of the detector, it is possible to perform 3D-mapping within a very short time interval and with very high resolution. We present the first detailed experimental 3D Fermi surface recorded in the full Brillouin zone along the kz-direction as well as other experimental results featuring multiple advantages of our technique. In combination with various light sources, including synchrotron radiation, our methodology and instrumentation offer new opportunities for high-resolution ARPES in the physical and life sciences.

We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $\overline{\Gamma}$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO$_2$ single-layer electronic structure.

There is immense interest in how the local environment influences the electronic structure of materials at the single-layer limit. We characterize moir\'e induced spatial variations in the electronic structure of in situ grown monolayer ${\mathrm{V}}_{2}{\mathrm{S}}_{3}$ on Au(111) by means of low-temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of states (LDOS), and quantify this modulation with respect to the moir\'e superstructure for multiple orientations of the monolayer with respect to the substrate. Scanning tunneling spectroscopy reveals a prominent peak in the LDOS, which is shifted in energy at different points of the moir\'e superstructure. Comparing ab initio calculations with angle-resolved photoemission, we are able to attribute this peak to bands that exhibit a large out of plane $d$-orbital character. This suggests that the moir\'e driven variations in the measured density of states are driven by a periodic modulation of the monolayer-substrate hybridization.

The transition-metal dichalcogenide VSe

The crystal structure, electronic structure, and transport properties of crystals with the nominal composition ${\mathrm{Nb}}_{0.25}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ are investigated. X-ray diffraction reveals that the as-grown crystals display phase segregation and contain major contributions of BiSe and the superconducting misfit layer compound ${(\mathrm{Bi}\mathrm{Se})}_{1.1}\mathrm{Nb}{\mathrm{Se}}_{2}$. The inhomogeneous character of the samples is also reflected in the electronic structure and transport properties of different single crystals. Angle-resolved photoemission spectroscopy (ARPES) reveals an electronic structure that resembles poor-quality ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ with an ill-defined topological surface state. High-quality topological surface states are instead observed when using a highly focused beam size, i.e., nanoARPES. While the superconducting transition temperature is found to vary between 2.5 and 3.5 K, the majority of the bulk single crystals does not exhibit a zero-resistance state suggesting filamentary superconductivity in the materials. Susceptibility measurements of the system together with the temperature dependence of the coherence length extracted from the upper critical field are consistent with conventional BCS superconductivity of a type II superconductor.

Collective electronic states such as the charge density wave (CDW) order and superconductivity (SC) respond sensitively to external perturbations. Such sensitivity is dramatically enhanced in two dimensions (2D), where 2D materials hosting such electronic states are largely exposed to the environment. In this regard, the ineludible presence of supporting substrates triggers various proximity effects on 2D materials that may ultimately compromise the stability and properties of the electronic ground state. In this work, we investigate the impact of proximity effects on the CDW and superconducting states in single-layer (SL) NbSe2 on four substrates of diverse nature, namely, bilayer graphene (BLG), SL-boron nitride (h-BN), Au(111), and bulk WSe2. By combining low-temperature (340 mK) scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we compare the electronic structure of this prototypical 2D superconductor on each substrate. We find that, even when the electronic band structure of SL-NbSe2 remains largely unaffected by the substrate except when placed on Au(111), where a charge transfer occurs, both the CDW and SC show disparate behaviors. On the insulating h-BN/Ir(111) substrate and the metallic BLG/SiC(0001) substrate, both the 3 × 3 CDW and superconducting phases persist in SL-NbSe2 with very similar properties, which reveals the negligible impact of graphene on these electronic phases. In contrast, these collective electronic phases are severely weakened and even absent on the bulk insulating WSe2 substrate and the metallic single-crystal Au(111) substrate. Our results provide valuable insights into the fragile stability of such electronic ground states in 2D materials., M.M.U. acknowledges support by the ERC Starting grant LINKSPM (grant 758558) and by the Spanish MINECO under grant no. PID2020-116619GB-C21. J.A.M. acknowledges financial support from the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (grant no. DFF-6108-00409). A.C, M.B., J.A.M., and P.H. acknowledge support from the VILLUM FONDEN via the Centre of Excellence for Dirac Materials (grant no. 11744). A.J.M.-G. acknowledges funding by the Spanish MINECO through project no. PID2020-116619GA-C22. E.C. and S.M.-V. acknowledge the Spanish MICINN (project PID2020-117152RB-I00 cofinanced by FEDER and the Unit of Excellence “Maria de Maeztu” CEX2019-000919-M) and the Generalitat Valenciana (Prometeo Programme and PO FEDER Program IDIFEDER/2018/061 and IDFEDER/2020/063). R.H. acknowledges support from Marie Skłodowska-Curie Individual Fellowships under HORIZON 2020 program for project MAGTMD (101033538).

Physical review / B 104(16), L161104 (2021). doi:10.1103/PhysRevB.104.L161104, We show that the presence of a transiently excited hot electron gas in graphene leads to a substantial broadening of the C 1s line probed by time-resolved x-ray photoemission spectroscopy. The broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron gas, rather than by vibrational excitations. This interpretation is supported by a quantitative line-shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in good agreement with electronic temperature values obtained from valence band data. Furthermore, we show how the momentum change of the outgoing core electrons leads to a detectable but very small change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the presence of a narrow �� band in the C 1s state., Published by Inst., Woodbury, NY

We present an experimental study of inelastic scattering processes on the (111) surface of the topological insulator Sb2Te3 using helium atom scattering. In contrast to other binary topological insulators such as Bi2Se3 and Bi2Te3, Sb2Te3 is much less studied and the as-grown Sb2Te3 sample turns out to be p-doped, with the Fermi-level located below the Dirac-point as confirmed by angle-resolved photoemission spectroscopy. We report the surface phonon dispersion along both high symmetry directions in the energy region below 11 meV, where the Rayleigh mode exhibits the strongest intensity. The experimental data is compared with a study based on density functional perturbation theory calculations, providing good agreement except for a set of additional peculiar inelastic events below the Rayleigh mode. In addition, an analysis of angular scans with respect to a number of additional inelastic events is presented, including resonance enhancement, kinematical focusing, focused inelastic resonance and surfing. In the latter case, phonon-assisted adsorption of the incident helium atom gives rise to a bound state where the helium atom rides the created Rayleigh wave. The authors are grateful for financial support by the FWF (Austrian Science Fund) within the project P29641-N36, as well as by NAWI Graz. We would like to thank the Aarhus University Research Foundation, VILLUM FOUNDATION via the Centre of Excellence for Dirac Materials (Grant No. 11744) and the SPP1666 of the DFG (Grant No. HO 5150/1-2) for financial support. M. Bremholm acknowledges financial support from the Center of Materials Crystallography (CMC) and the Danish National Research Foundation (DNRF93).

We present an experimental study of inelastic scattering processes on the (111) surface of the topological insulator Sb

Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first-principle calculations, we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution toward the integration of graphene with conventional semiconductors.

A fair assignment of credit for multi-authored publications is a long-standing issue in scientometrics. In the calculation of the $h$-index, for instance, all co-authors receive equal credit for a given publication, independent of a given author's contribution to the work or of the total number of co-authors. Several attempts have been made to distribute the credit in a more appropriate manner. In a recent paper, Hirsch has suggested a new way of credit assignment that is fundamentally different from the previous ones: All credit for a multi-author paper goes to a single author, the called ``$\alpha$-author'', defined as the person with the highest current $h$-index not the highest $h$-index at the time of the paper's publication) (J. E. Hirsch, Scientometrics 118, 673 (2019)). The collection of papers this author has received credit for as $\alpha$-author is then used to calculate a new index, $h_{\alpha}$, following the same recipe as for the usual $h$ index. The objective of this new assignment is not a fairer distribution of credit, but rather the determination of an altogether different property, the degree of a person's scientific leadership. We show that given the complex time dependence of $h$ for individual scientists, the approach of using the current $h$ value instead of the historic one is problematic, and we argue that it would be feasible to determine the $\alpha$-author at the time of the paper's publication instead. On the other hand, there are other practical considerations that make the calculation of the proposed $h_{\alpha}$ very difficult. As an alternative, we explore other ways of crediting papers to a single author in order to test early career achievement or scientific leadership., Comment: 6 pages, 4 figures