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The use of optical cavities on resonance with material excitations allows controlling light–matter interaction in both the regimes of weak and strong coupling. We study here the multimode vibrational coupling of low energy phonons in the charge-density-wave material 1T-TaS2 across its insulator-to-metal phase transition. For this purpose, we embed 1T-TaS2 into THz Fabry–Pérot cryogenic cavities tunable in frequency within the spectral range of the vibrational modes of the insulating phase and track the linear response of the coupled phonons across the insulator-to-metal transition. In the low temperature dielectric state, we reveal the signatures of a multimode vibrational strong collective coupling. The observed polariton modes inherit character from all the vibrational resonances as a consequence of the cavity-mediated hybridization. We reveal that the vibrational strong collective coupling is suppressed across the insulator-to-metal transition as a consequence of the phonon-screening induced by the free charges. Our findings emphasize how the response of cavity-coupled vibrations can be modified by the presence of free charges, uncovering a new direction toward the tuning of coherent light–matter interaction in cavity-confined correlated materials. [ABSTRACT FROM AUTHOR]

We recorded the hyper-Raman spectra resulting from the interaction of a near-infrared (near-IR) picosecond pulse and a terahertz (THz) ultrashort pulse at the surface of a (111) silicon sample. A simple model is proposed to analyze the evolution of the hyper-Raman spectra vs the time delay between the near-IR and THz pulses. It links the hyper-Raman spectra to the multi-phonon absorption in silicon. This approach makes it possible to demonstrate that, during carrier generation by the near-IR pulse, the two-phonon and three-phonon absorption bands are enhanced in modes involving optical phonons. This process results from the very rapid and strong population of the optical phonons induced by the photo-generated hot carriers. It occurs over a few hundreds of femtoseconds and lasts throughout the duration of the near-IR pulse. [ABSTRACT FROM AUTHOR]

We describe how to simulate charge diffusion in organic semiconductors using a recently introduced mixed quantum–classical method, the mapping approach to surface hopping. In contrast to standard fewest-switches surface hopping, this method propagates the classical degrees of freedom deterministically on the most populated adiabatic electronic state. This correctly preserves the equilibrium distribution of a quantum charge coupled to classical phonons, allowing one to time-average along trajectories to improve the statistical convergence of the calculation. We illustrate the method with an application to a standard model for the charge transport in the direction of maximum mobility in crystalline rubrene. Because of its consistency with the equilibrium distribution, the present method gives a time-dependent diffusion coefficient that plateaus correctly to a long-time limiting value. The resulting mobility is somewhat higher than that of the relaxation time approximation, which uses a phenomenological relaxation parameter to obtain a non-zero diffusion coefficient from a calculation with static phonon disorder. However, it is very similar to the mobility obtained from Ehrenfest dynamics, at least in the parameter regimes we have investigated here. This is somewhat surprising because Ehrenfest dynamics overheats the electronic subsystem and is, therefore, inconsistent with the equilibrium distribution. [ABSTRACT FROM AUTHOR]

Through comprehensive data analysis, we demonstrate that a χ(2)-induced artifact, arising from imperfect balancing in the conventional electro-optic sampling detection scheme, contributes significantly to the measured signal in 2D Raman–THz spectroscopy of non-centrosymmetric materials. The artifact is a product of two 1D responses, overwhelming the desired 2D response. We confirm that by analyzing the 2D Raman–THz response of an x-cut beta barium borate crystal. We furthermore show that this artifact can be effectively suppressed by implementing a special detection scheme. We successfully isolate the desired third-order 2D Raman–THz response, revealing a distinct cross-peak feature, whose frequency position suggests the coupling between two crystal phonons. [ABSTRACT FROM AUTHOR]

The quantum thermal transport of elastic excitations through a two-dimensional elastic waveguide between two thermal reservoirs is studied. We solve the classical Kirchhoff–Love equation for rectangular plates and explore the dispersion relation for both the symmetric and antisymmetric solutions. Then, we study the phonon transport of these modes within the second quantization framework by analyzing the mean quadratic displacement, from which the energy density current, the temperature field, and conductance are determined. We identify the relevant modes contributing to thermal transport and explore the average temperature difference to reach the high-temperature limit. We expect our results to pave the way for understanding phonon-mediated thermal transport in two-dimensional mesoscopic quantum devices. [ABSTRACT FROM AUTHOR]

In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel material properties under strain, and subsequently, their effect on carrier transport properties, i.e., scattering rates, mobility, and then finally simulate and analyze dissipative current transport with a non-equilibrium Green's function–Poisson's equation self-consistent solver. The scattering model includes the effects of charged impurities, intrinsic phonons, and remote phonons as well as the screening effect due to charged carriers. Impact of strain engineering on contact resistance is also incorporated into the transport simulations to determine the potential performance enhancements using strain in practical devices. Based on the comprehensive simulation results, we identify the materials and strain configuration that provide the best improvement in performance. We demonstrate an ON-current gain of 43.3% in a biaxially compressively strained monolayer MoSe2 device achieved through unique valley-crossing. Furthermore, implications of strain engineering for emerging energy-efficient devices based on band-to-band tunneling and spintronics are evaluated to explore uncharted frontiers in beyond-CMOS electron devices. [ABSTRACT FROM AUTHOR]

It has been recently shown that 2D systems can exhibit crystalline phases with long-range translational order showcasing a striking violation of the Hohenberg–Mermin–Wagner (HMW) theorem, which is valid at equilibrium. This is made possible by athermal driving mechanisms that inject energy into the system without exciting long wavelength modes of the density field, thereby inducing hyperuniformity. However, as thermal fluctuations are superimposed on the non-equilibrium driving, long-range translational order is inevitably lost. Here, we discuss the possibility of exploiting non-equilibrium effects to suppress arbitrarily large density fluctuations even when a global thermal bath is coupled to the system. We introduce a model of a harmonic crystal driven both by a global thermal bath and by a momentum conserving noise, where the typical observables related to density fluctuations and long-range translational order can be analytically derived and put in relation. This model allows us to rationalize the violation of the HMW theorem observed in previous studies through the prediction of large-wavelength phonons, which thermalize at a vanishing effective temperature when the global bath is switched off. The conceptual framework introduced through this theory is then applied to numerical simulations of a hard-disk solid in contact with a thermal bath and driven out-of-equilibrium by active collisions. Our numerical analysis demonstrates how varying driving and dissipative parameters can lead to an arbitrary enhancement of the quasi-long-range order in the system regardless of the applied global noise amplitude. Finally, we outline a possible experimental procedure to apply our results to a realistic granular system. [ABSTRACT FROM AUTHOR]

Tree tensor network states (TTNS) decompose the system wavefunction to the product of low-rank tensors based on the tree topology, serving as the foundation of the multi-layer multi-configuration time-dependent Hartree method. In this work, we present an algorithm that automatically constructs the optimal and exact tree tensor network operators (TTNO) for any sum-of-product symbolic quantum operator. The construction is based on the minimum vertex cover of a bipartite graph. With the optimal TTNO, we simulate open quantum systems, such as spin relaxation dynamics in the spin-boson model and charge transport in molecular junctions. In these simulations, the environment is treated as discrete modes and its wavefunction is evolved on equal footing with the system. We employ the Cole–Davidson spectral density to model the glassy phonon environment and incorporate temperature effects via thermo-field dynamics. Our results show that the computational cost scales linearly with the number of discretized modes, demonstrating the efficiency of our approach. [ABSTRACT FROM AUTHOR]

An accurate and efficient heat bath method plays a key role in atomic simulations of the thermal and mechanical properties of single-crystal silicon. Here, focusing on the single-crystal silicon (111) layer, which is a crucial lattice structure commonly employed as a substrate for chips, we propose a heat jet approach for finite temperature atomic simulations of silicon layers. First, we formulate the linearized dynamic equations for the silicon atoms and calculate the dispersion relation and lattice wave solutions. Then, an appropriate matching boundary condition is chosen for designing the two-way boundary condition, which allows incoming waves to inject into the lattice system while eliminating boundary reflections. Combining the two-way boundary condition and phonon heat source, the heat jet approach for the silicon (111) layer is proposed. Numerical tests illustrate the accuracy and effectiveness of the heat jet approach in simultaneously resolving thermal fluctuations and controlling temperature. Furthermore, we simulate the propagation of a Gaussian hump at a given temperature with the heat jet approach compared to the Nosé–Hoover heat bath. Numerical results demonstrate that the heat jet approach can well describe the movement of large structural deformations among thermal fluctuations without boundary reflections. [ABSTRACT FROM AUTHOR]

The decisive experimental evidence of enhanced heat conduction driven by surface phonon polaritons (SPhPs) has been recently demonstrated along polar nanofilms. However, a proper quantitative interpretation remains to be fully established. In this work, we provide a consistent theoretical explanation of the measured thermal conductivities of polar nanofilms, based on a coupled Boltzmann transport equation and heat diffusion equation for describing the dynamics of SPhPs and phonons, respectively. This formalism enables to separately quantify the SPhP and phonon contributions to the in-plane heat transport and shows the overestimation of the SPhP thermal conductivity predicted by previous empirical model for predominant boundary scattering. This study, thus, promotes the understanding of the observed thermal conductivity enhancement driven by SPhPs, as a novel heat conduction channel for heat dissipation applications in nanoelectronics and optoelectronics. [ABSTRACT FROM AUTHOR]

The laser power mediated changes in the Raman line shape have been considered in terms of interference between discrete phonon states ρ and the electronic continuum states ϰ contributed by Urbach tail states. The laser-induced effects are treated in terms of the increase in the surface temperature and thereby the scaling of electronic disorder, i.e., Urbach energy, which can further contribute to the electron–phonon interactions. Therefore, the visualization of this effect is attempted analytically as a perturbation term in the Hamiltonian, which clearly accounts for the observed changes with laser power. This has been investigated based on the experimental results of laser power dependent Raman spectra of bulk EuFeO3 and silicon nanowires, which are found to provide convincing interpretations. [ABSTRACT FROM AUTHOR]

In addition to Goldstone phonons that generically emerge in the low-frequency vibrational spectrum of any solid, crystalline or glassy, structural glasses also feature other low-frequency vibrational modes. The nature and statistical properties of these modes—often termed "excess modes"—have been the subject of decades-long investigation. Studying them, even using well-controlled computer glasses, has proven challenging due to strong spatial hybridization effects between phononic and nonphononic excitations, which hinder quantitative analyses of the nonphononic contribution D G (ω) to the total spectrum D (ω) , per frequency ω. Here, using recent advances indicating that D G (ω) = D (ω) − D D (ω) , where D D (ω) is Debye's spectrum of phonons, we present a simple and straightforward scheme to enumerate nonphononic modes in computer glasses. Our analysis establishes that nonphononic modes in computer glasses indeed make an additive contribution to the total spectrum, including in the presence of strong hybridizations. Moreover, it cleanly reveals the universal D G (ω) ∼ ω 4 tail of the nonphononic spectrum, and opens the way for related analyses of experimental spectra of glasses. [ABSTRACT FROM AUTHOR]

We construct the effective Hartree potential for H2 on Cu(111) as introduced in our earlier work [Dutta et al., J. Chem. Phys. 154, 104103 (2021), and Dutta et al., J. Chem. Phys. 157, 194112 (2022)] starting from the same gas–metal interaction potential obtained for 0 K. Unlike in that work, we now explicitly account for surface expansion at 925 K and investigate different models to describe the surface vibrational modes: (i) a cluster model yielding harmonic normal modes at 0 K and (ii) slab models resulting in phonons at 0 and 925 K according to the quasi-harmonic approximation—all consistently calculated at the density functional theory level with the same exchange–correlation potential. While performing dynamical calculations for the H2(v = 0, j = 0)–Cu(111) system employing Hartree potential constructed with 925 K phonons and surface temperature, (i) the calculated chemisorption probabilities are the highest compared to the other approaches over the energy domain and (ii) the threshold for the reaction probability is the lowest, in close agreement with the experiment. Although the survival probabilities (v′ = 0) depict the expected trend (lower in magnitude), the excitation probabilities (v′ = 1) display a higher magnitude since the 925 K phonons and surface temperature are more effective for the excitation process compared to the phonons/normal modes obtained from the other approaches investigated to describe the surface. [ABSTRACT FROM AUTHOR]

Electronic transport in inversion symmetry broken monolayer phosphorene under the influence of electron–phonon interaction is investigated. Such interaction renormalizes the band structure, leading to a significant modification of electron dynamics, which depends on the interaction strength. We find that the imaginary part of the self-energy remains minimal within a particular region of energy ℏ ω , where the quasiparticle has zero density of final states. It turns out that the emission of phonon is not allowed in that energy range. At the boundary of this region, there is a sudden increase in the imaginary part of the self-energy, where its real part exhibits singular behavior around specific energies. In addition, it is shown that dynamic optical conductivity exhibits remarkable effects in the presence of the electron–phonon interaction. In particular, it remains minimal in a particular region of energy ℏ ω , then it increases monotonically and hits the peak of the main absorption edge. Moreover, we find that the dynamic optical conductivity changes significantly with the change in electron–phonon interaction strength, temperature, phonon energy, chemical potential, and bandgap in the energy spectrum of the system. Both the real and imaginary parts of the self-energy acquire energy dependence that reflects phonon structure and leads to a shift in the conductivity peak of the longitudinal optical conductivity. [ABSTRACT FROM AUTHOR]

Solid-state thermomagnetic modules operating based on the Nernst–Ettingshausen effects are an alternative to conventional solid-state thermoelectric modules. These modules are appropriate for low-temperature applications where the thermoelectric modules are not efficient. Here, we briefly discuss the application, performance, similarities, and differences of thermoelectric and thermomagnetic materials and modules. We review thermomagnetic module design, Nernst coefficient measurement techniques, and theoretical advances, emphasizing the Nernst effect and factors influencing its response in semimetals such as carrier compensation, Fermi surface, mobility, phonon drag, and Berry curvature. The main objective is to summarize the materials design criteria to achieve high thermomagnetic performance to accelerate thermomagnetic materials discovery. [ABSTRACT FROM AUTHOR]

In this paper, we introduce the Floquet mean-field dynamics and Floquet surface hopping approaches to study the nonadiabatic dynamics in periodically driven solid systems. We demonstrate that these two approaches can be formulated in both real and reciprocal spaces. Using the two approaches, we are able to simulate the interaction between electronic carriers and phonons under periodic drivings, such as strong light–matter interactions. Employing the Holstein and Peierls models, we show that strong light–matter interactions can effectively modulate the dynamics of electronic population and mobility. Notably, our study demonstrates the feasibility and effectiveness of modeling low-momentum carriers' interactions with phonons using a truncated reciprocal space basis, an approach impractical in real space frameworks. Moreover, we reveal that even with a significant truncation, carrier populations derived from surface hopping maintain greater accuracy compared to those obtained via mean-field dynamics. These results underscore the potential of our proposed methods in advancing the understanding of carrier–phonon interactions in various periodically driven materials. [ABSTRACT FROM AUTHOR]

Halide perovskite nanocrystals are at the forefront of materials research due to their remarkable optoelectronic properties and versatile applications. While their lattice structure and optical properties have been extensively investigated for the structure–property correlation, their lattice dynamics, the physical link between the lattice structure and optoelectronic properties, has been much less visited. We report the evolution of structural dynamics of a series of cesium lead halide perovskite nanocrystals whose size and morphology are systematically varied by synthesis temperature. Low-frequency Raman spectroscopy uncovers the nanocrystals' structural dynamics, including a relaxational spectral continuum from ligand librations and a phonon spectrum evolving with nanocrystal size. As the size of nanocrystals increases, their phonon spectrum becomes more intense, and their spectral weights redistribute with new first- and second-order modes being activated. The linewidth of the observed phonon modes generally broadens as the nanocrystal grows larger, an interesting deviation from the established phonon confinement model. We suggest that strong confinement and truncation of the lattice and ligands anchoring on the surface might lead to pinning of the lattice dynamics at nanoscale. These findings offer new insights into the bulk–nano-transition in halide perovskite soft semiconductors. [ABSTRACT FROM AUTHOR]

The in-plane thermal conductivity of hexagonal boron nitride (h-BN) with varying thicknesses is a key property that affects the performance of various applications from electronics to optoelectronics. However, the transition of the thermal conductivity from two-dimensional (2D) to three-dimensional (3D) h-BN remains elusive. To answer this question, we have developed a machine learning interatomic potential within the neuroevolution potential (NEP) framework for h-BN, achieving a high accuracy akin to ab initio calculations in predicting its thermal conductivity and phonon transport from monolayer to multilayers and bulk. Utilizing molecular dynamics simulations based on the NEP, we predict the thermal conductivity of h-BN with a thickness up to ∼100 nm, demonstrating that its thermal conductivity quickly decreases from the monolayer and saturates to the bulk value above four layers. The saturation of its thermal conductivity is attributed to the little change in phonon group velocity and lifetime as the thickness increases beyond four layers. In particular, the weak thickness dependence of phonon lifetime in h-BN with a nanoscale thickness results from its extremely high phonon focusing along the in-plane direction. This research bridges the knowledge gap of phonon transport between 2D and 3D h-BN and will benefit the thermal design and performance optimization of relevant applications. [ABSTRACT FROM AUTHOR]

High-frequency coherent acoustic phonons hold immense value in characterizing the coupling between magnetic, lattice, and electronic properties, offering nanometer-scale spatial resolution within the ultrafast timescale. However, efficiently propagating intense sub-THz coherent acoustic phonons across diverse materials remains a formidable challenge. Here, we demonstrate that using vanadium dioxide (VO2) as a transducer can induce enhanced coherent acoustic pulses that propagate efficiently (∼90%) into TiO2 due to excellent acoustic impedance matching and minor lattice interface mismatch compared with traditional metals such as Pt, Au, and Cu. Employing time-resolved pump–probe reflectivity spectroscopy, we observe pronounced coherent phonon oscillations reaching up to 0.164 THz from the longitudinal acoustic mode along the c axis in VO2/TiO2. Furthermore, the temperature and pump fluence dependence of the coherent phonon oscillation signals suggest that the metallic state of VO2 responds to these large coherent acoustic phonons. [ABSTRACT FROM AUTHOR]

Obtaining accurate lattice thermal conductivity data of LiF under extreme conditions not only provides important reference for performance evaluation, prediction, and control of materials, but also helps to alleviate the significant challenges of precise experimental measurements. The high-temperature phonon properties and lattice thermal conductivity (LTC) of solid LiF were calculated by combining on-the-fly machine learning force fields (MLFFs) with the Green–Kubo method. The introduction of MLFF successfully combines the accuracy of ab initio molecular dynamics with the scalability advantage of classical molecular dynamics. At high temperatures, there is a significant enhancement in the vibrational coupling between the acoustic and optical branches of LiF, as well as resonant effects between Li and F atoms, resulting in strong anharmonicity. Additionally, the main peak of the phonon density of states shows a noticeable redshift compared to the harmonic case. The enhanced coupling of TO and TA modes at high temperature leads to a significant increase in phonon scattering rate. By considering higher-order phonon anharmonicity, the predicted LTC is significantly reduced compared to the results obtained from considering only three-phonon interactions. Along the Hugoniot curve up to 100 GPa (2150 K), the predicted LTC agrees well with the experimental values. These findings demonstrate the crucial role of phonon anharmonicity in promoting phonon scattering. [ABSTRACT FROM AUTHOR]

We report the real-valued static and complex-valued quasi-static anisotropic permittivity parameters of rare-earth scandate orthorhombic single crystal GdScO3 (GSO), TbScO3 (TSO), and DyScO3 (DSO). Employing continuous-wave terahertz spectroscopy (0.2–1 THz), the complex permittivity was extracted using an anisotropic ambient-film-ambient model. Data obtained from multiple samples of the same oxides and different surface cuts were analyzed simultaneously. The zero-frequency limit of the modeled data indicates that at room temperature the real part of the dielectric tensor components for GSO are ɛa = 22.7, ɛb = 19.3, and ɛc = 28.1; for DSO, ɛa = 20.3, ɛb = 17.4, and ɛc = 31.1; and for TSO, ɛa = 21.6, ɛb = 18.1, and ɛc = 30.3, with a, b, and c crystallographic axes constituting the principal directions for the permittivity tensor. These results are in excellent agreement with expectations from theoretical computations and with scarcely available data from previous experimental studies. Furthermore, our results evidence a noticeable attenuation, which increases with frequency, and are very significant especially at the higher frequency end of the measurement and along the c-direction in all samples. We suggest the attenuation is most likely caused by the onset of absorption due to long-wavelength active optical phonon modes. These results are important for electronic and potential sub-terahertz applications (e.g., quarter-wave plate) benefiting from the large index contrast along different directions in these materials. [ABSTRACT FROM AUTHOR]

The discovery of advanced thermal materials with exceptional phonon properties drives technological advancements, impacting innovations from electronics to superconductors. Understanding the intricate relationship between composition, structure, and phonon thermal transport properties is crucial for speeding up such discovery. Exploring innovative materials involves navigating vast design spaces and considering chemical and structural factors on multiple scales and modalities. Artificial intelligence (AI) is transforming science and engineering and poised to transform discovery and innovation. This era offers a unique opportunity to establish a new paradigm for the discovery of advanced materials by leveraging databases, simulations, and accumulated knowledge, venturing into experimental frontiers, and incorporating cutting-edge AI technologies. In this perspective, first, the general approach of density functional theory (DFT) coupled with phonon Boltzmann transport equation (BTE) for predicting comprehensive phonon properties will be reviewed. Then, to circumvent the extremely computationally demanding DFT + BTE approach, some early studies and progress of deploying AI/machine learning (ML) models to phonon thermal transport in the context of structure–phonon property relationship prediction will be presented, and their limitations will also be discussed. Finally, a summary of current challenges and an outlook of future trends will be given. Further development of incorporating AI/ML algorithms for phonon thermal transport could range from phonon database construction to universal machine learning potential training, to inverse design of materials with target phonon properties and to extend ML models beyond traditional phonons. [ABSTRACT FROM AUTHOR]

In this research, we utilized density functional theory (DFT) computations to perform ab initio molecular dynamics simulations and static calculations on graphene, hexagonal boron nitride, and their heterostructures, subjecting them to strains, perturbations, twist angles, and defects. The gathered energy, force, and virial information informed the creation of a training set comprising 1253 structures. Employing the Neural Evolutionary Potential framework integrated into Graphics Processing Units Molecular Dynamics, we fitted a machine learning potential (MLP) that closely mirrored the DFT potential energy surface. Rigorous validation of lattice constants and phonon dispersion relations confirmed the precision and dependability of the MLP, establishing a solid foundation for subsequent thermal transport investigations. A further analysis of the impact of twist angles uncovered a significant reduction in thermal conductivity, particularly notable in heterostructures with a decline exceeding 35%. The reduction in thermal conductivity primarily stems from the twist angle-induced softening of phonon modes and the accompanying increase in phonon scattering rates, which intensifies anharmonic interactions among phonons. Our study underscores the efficacy of the MLP in delineating the thermal transport attributes of two-dimensional materials and their heterostructures, while also elucidating the micro-mechanisms behind the influence of the twist angle on thermal conductivity, offering fresh perspectives for the design of advanced thermal management materials. [ABSTRACT FROM AUTHOR]

While SnF2 is reported as an effective additive for improving the efficiency of lead-free tin-based perovskite solar cells, the mechanism is still unclear and requires further studies. Upon incorporating SnF2 into MASnI3, SnF2 reduces the intrinsic carrier density from 1018 to 1012 cm–3 and produces a longer carrier diffusion length as confirmed by the Hall measurements. The femtosecond transient absorption spectroscopy shows that SnF2 doping enhances the hot-phonon bottleneck effect of MASnI3. The slow cooling process of hot carriers may help to reduce non-radiative recombination, increase the fluorescence lifetime, and, therefore, improve the utilization rate of carriers. Finally, lead-free low bandgap perovskite MASnI3 is utilized as a light absorbing layer in solar cells, achieving high optical current and high voltage in tin-based perovskite solar cells. The final power conversion efficiency is 10.2%, while the power conversion efficiency for the control unit is 6.69%. [ABSTRACT FROM AUTHOR]

Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this article, we provide such analysis by examining time-resolved data acquired using optical transient reflectivity and reflection ultrafast electron diffraction, two complementary methods under the same experimental conditions. At elevated excitation fluences, we find that more than 90% of the photoinjected carriers are annihilated within the first picosecond (ps) and transfer their energy to phonons in a nonthermal, anisotropic fashion. Electronically, the remaining carrier density around the band edges induces a significant interaction that leads to an interlayer lattice contraction in a few ps but soon diminishes as a result of the continuing loss of carriers. Structurally, phonon–phonon scattering redistributes the energy in the lattice and results in the generation of out-of-plane coherent acoustic phonons and thermal lattice expansion. Their onset times at ∼6 ps are found to be in good agreement. Later, a thermalized quasi-equilibrium state is reached following a period of about 40–50 ps. Hence, we propose a picture with five temporal regimes for bP's photodynamics. [ABSTRACT FROM AUTHOR]

The surface optical (SO) phonon replica in photoluminescence (PL) spectroscopy of nitride nanowires (NWs) was theoretically investigated in this study. The dispersive relationships of SO phonon mode in anisotropic wurtzite (WZ) and isotropic zinc-blende (ZB) crystal structure NWs with circular and square cross sections (CSs) were derived within the framework of the dielectric continuum model. Based on the energy and momentum conservation laws, a constraint relationship between the frequency and wave-number was constructed for SO phonon-assisted excitonic PL spectra in the NW structure. By combining the dispersive and constraint relationships, the frequency and wave-number of the SO phonon replica in the PL spectra could be determined. The WZ and ZB crystal structures of nitride semiconductor were considered. The influences of surface factors including the CS shape, dielectric medium, and environment temperature on the frequency and photon wavelength of the band-edge emission of the SO phonon replica were studied in detail. Numerical results reveal that the crystal structure, surface factors, and environment temperature greatly affect the frequency and photon wavelength of the band-edge emission of the SO phonon replica. The calculated results for the photon wavelength agree well with the experimental values of the SO phonon replica in AlN NWs. The results of the dielectric effect obtained here are also supported by previous experimental and theoretical results for nitrides and other semiconductor NWs. The present theoretical scheme and numerical results can be used to analyze and design the SO phonon replica in PL spectra of nanostructures. [ABSTRACT FROM AUTHOR]

Efficient thermoelectric energy conversion at the nanoscale could power the Internet of Things and cool nanoelectronic circuits and improve the performance of quantum applications. Width-modulated nanowaveguides are suitable for these purposes because their thermoelectric efficiency can be geometrically tuned and integrated into the nanoelectronics industry processes. They are attracting increasing research interest stimulated by theoretical predictions for exceptional performance. To validate their potential, a better understanding of the effect of width modulation on thermoelectric efficiency is needed. So far, it is considered that (a) the thermoelectric efficiency increases monotonically with increasing width-mismatch due to decreasing phonon thermal conduction taking place without significantly affecting electron transport, (b) width-mismatch dominates the effect of width modulation in transport, and (c) phonons play the main role in increasing the thermoelectric efficiency. Here, we demonstrate counterevidence based on an investigation of the effect of width modulation on electrons so far overlooked. We reveal that (a) the thermoelectric efficiency varies non-monotonically with the modulation mismatch due to quantum effects on electron transport, (b) the modulation mismatch is quantified by the size-mismatch of the modulation rather than by the width-mismatch, and (c) it is electrons rather than phonons that play the main role in optimizing width modulation for maximum thermoelectric efficiency when quantum effects dominate. Our findings indicate that research should reorient from large width-mismatch toward optimal modulation-mismatch width-modulated nanostructures to enhance thermoelectric efficiency due to quantum effects. Our work provides new insight for designing nanowaveguides for efficient thermoelectric energy conversion at the nanoscale. [ABSTRACT FROM AUTHOR]

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are attractive candidates for quantum memories because of their long lifetimes and high operating frequencies. In this study, we establish a modeling approach to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories, and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, consisting of a gadolinium iron garnet (GGG) thick film and a patterned yttrium iron garnet (YIG) thin film. The BAW phonons are excited in GGG thick film via coupling with magnons in the YIG thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and magnon–phonon coupling strengths in YIG/GGG planar and confocal HBAR (CHBAR) structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and compare the two methods. We discuss strategies to improve the phonon lifetimes in the diffraction-limited regime, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high cooperativities and phonon lifetimes on the order of ∼ 10 5 and ∼ 10 milliseconds, respectively, could be achieved using a CHBAR structure with 10 μ m YIG lateral area. Additionally, high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices. The proposed CHBAR structure will offer more than 100-fold improvement of integration density relative to a recently demonstrated YIG/GGG device. Our results will have direct applicability for devices operating in the cryogenic or milliKelvin regimes. For example, our study will inform the design of HBAR devices that could couple with superconducting qubits for promising quantum information platforms. [ABSTRACT FROM AUTHOR]

Thermal phonon localization, rooted in phonon wave nature, is widely observed in disordered atomic systems. Binary superlattices, with structural diversity from abundant interfaces, allow for disorder introduction by engineering interfacial structures. In this study, two different disorder entities, namely, aperiodicity (randomized layer thicknesses) and interfacial mixing, were introduced to graphene/h-BN superlattices. Molecular dynamics simulations revealed that both disordered structures can significantly reduce the thermal conductivity, with interfacial mixing more effectively impeding thermal transport. The combined effect of these disorders further decreased thermal conductivity. The underlying mechanism involves Anderson localization of phonons, demonstrated by the exponential decay of phonon transmission and suppressed phonon participation ratio. Phase-breaking interactions at higher temperatures delocalize localized modes. This study offers valuable guidance for structurally designing materials targeting low thermal conductivity through the manipulation of phonon localization. [ABSTRACT FROM AUTHOR]

We report a first-principles study of the linear electro-optic or Pockels effect in SrxBa1-xNb2O6 (SBN). SBN is an attractive material for building electro-optic modulators in silicon photonics as it has one of the highest known Pockels coefficients and can be integrated on Si. We investigate the microscopic mechanism behind the giant Pockels effect and find that the optical phonon contribution dominates the electro-optic response. We identify the phonon modes that have a significant contribution to the Pockels response and discuss the microscopic origin of the response. In addition, we analyze the contribution of the converse piezoelectric effect to the Pockels response. We find good agreement when comparing our results to available experiment. [ABSTRACT FROM AUTHOR]

Partially fluorinated dimyristoylphosphatidylcholines (DMPCs) involving double alkyl chains are employed to control the phonon generation in thin films, which is examined by infrared (IR) spectroscopy coupled with multiple-angle incidence resolution spectrometry (MAIRS). technique. Compounds having perfluoroalkyl (Rf) chains are known to exhibit phonon bands in IR spectra because of the strong dipole–dipole interactions. Since the phonon bands of an organic matter have a similar shape to the normal absorption bands, however, recognition of the phonon modes is difficult and confusing for IR spectroscopists. Here, we show that MAIRS works out for finding phonon modes in monolayers: the Berreman shift is readily captured by the MAIRS in-plane and out-of-plane (OP) spectra. By measuring the longitudinal-optic (LO) energy-loss function spectrum of a bulk sample, the degree of molecular aggregation in the monolayer is also revealed by comparing the OP spectrum of the monolayer to the LO one. In addition, partially fluorinated DMPC compounds having both hydrocarbon and Rf chains are prepared, and they are used to obstruct the self-aggregation of the Rf groups in the film. As a result, the phonon characteristics are mostly lost in the MAIRS spectra as expected. [ABSTRACT FROM AUTHOR]

The enigmatic mechanism underlying unconventional high-temperature superconductivity, especially the role of lattice dynamics, has remained a subject of debate. Theoretical insights have long been hindered due to the lack of an accurate first-principles description of the lattice dynamics of cuprates. Recently, using the r2SCAN meta-generalized gradient approximation (meta-GGA) functional, we have been able to achieve accurate phonon spectra of an insulating cuprate YBa2Cu3O6 and discover significant magnetoelastic coupling in experimentally interesting Cu–O bond stretching optical modes [Ning et al., Phys. Rev. B 107, 045126 (2023)]. We extend this work by comparing Perdew–Burke–Ernzerhof and r2SCAN performances with corrections from the on-site Hubbard U and the D4 van der Waals (vdW) methods, aiming at further understanding on both the materials science side and the density functional side. We demonstrate the importance of vdW and self-interaction corrections for accurate first-principles YBa2Cu3O6 lattice dynamics. Since r2SCAN by itself partially accounts for these effects, the good performance of r2SCAN is now more fully explained. In addition, the performances of the Tao–Mo series of meta-GGAs, which are constructed in a different way from the strongly constrained and appropriately normed (SCAN) meta-GGA and its revised version r2SCAN, are also compared and discussed. [ABSTRACT FROM AUTHOR]

This paper investigates a systematic theoretical study of the lattice dynamical, electronic, and thermoelectric transport properties of PbTe, which is subjected to hydrostatic pressure and uniaxial stress along the [100], [110], and [111] directions, by using first-principles calculations. Our study demonstrates that stress is an effective tool for regulating thermoelectric properties in materials, and different types of stress affect these properties through distinct mechanisms. Specifically, under hydrostatic pressure and uniaxial stress along the [100] direction, PbTe exhibits similar electronic behavior but different lattice dynamical properties. Bandgap closure and reopening are observed under hydrostatic pressure and uniaxial stress along the [100] direction, whereas only the gap opposite trends are seen for uniaxial stress along the [110] and [111] directions. Under uniaxial stress along the [100] direction, phonon lifetimes decrease, leading to low thermal conductivity. In contrast, under hydrostatic pressure and uniaxial stress in the [110] and [111] directions, phonon lifetimes are enhanced due to a weakening of the anharmonic effect. Our findings provide a comprehensive understanding of the implication of different stress types on the thermoelectric properties of PbTe. [ABSTRACT FROM AUTHOR]

The enigmatic mechanism underlying unconventional high-temperature superconductivity, especially the role of lattice dynamics, has remained a subject of debate. Theoretical insights have long been hindered due to the lack of an accurate first-principles description of the lattice dynamics of cuprates. Recently, using the r2SCAN meta-generalized gradient approximation (meta-GGA) functional, we have been able to achieve accurate phonon spectra of an insulating cuprate YBa2Cu3O6 and discover significant magnetoelastic coupling in experimentally interesting Cu–O bond stretching optical modes [Ning et al., Phys. Rev. B 107, 045126 (2023)]. We extend this work by comparing Perdew–Burke–Ernzerhof and r2SCAN performances with corrections from the on-site Hubbard U and the D4 van der Waals (vdW) methods, aiming at further understanding on both the materials science side and the density functional side. We demonstrate the importance of vdW and self-interaction corrections for accurate first-principles YBa2Cu3O6 lattice dynamics. Since r2SCAN by itself partially accounts for these effects, the good performance of r2SCAN is now more fully explained. In addition, the performances of the Tao–Mo series of meta-GGAs, which are constructed in a different way from the strongly constrained and appropriately normed (SCAN) meta-GGA and its revised version r2SCAN, are also compared and discussed. [ABSTRACT FROM AUTHOR]

The properties of excitons, or correlated electron-hole pairs, are of paramount importance to optoelectronic applications of materials. A central component of exciton physics is the electron-hole interaction, which is commonly treated as screened solely by electrons within a material. However, nuclear motion can screen this Coulomb interaction as well, with several recent studies developing model approaches for approximating the phonon screening of excitonic properties. While these model approaches tend to improve agreement with experiment, they rely on several approximations that restrict their applicability to a wide range of materials, and thus far they have neglected the effect of finite temperatures. Here, we develop a fully first-principles, parameter-free approach to compute the temperature-dependent effects of phonon screening within the ab initio [Formula: see text]-Bethe-Salpeter equation framework. We recover previously proposed models of phonon screening as well-defined limits of our general framework, and discuss their validity by comparing them against our first-principles results. We develop an efficient computational workflow and apply it to a diverse set of semiconductors, specifically AlN, CdS, GaN, MgO, and [Formula: see text]. We demonstrate under different physical scenarios how excitons may be screened by multiple polar optical or acoustic phonons, how their binding energies can exhibit strong temperature dependence, and the ultrafast timescales on which they dissociate into free electron-hole pairs.

We present an atomistic simulation of thermoelectric properties in cove-edged graphene nanoribbons (CGNRs) via the nonequilibrium Green's function. Different from gapless zigzag graphene nanoribbons (ZGNRs), CGNRs exhibit a noticeable bandgap. Such a bandgap can be modulated by varying three structural parameters (namely, the width N, the distance between adjacent coves m, as well as the shortest offset n) of CGNRs, which can give rise to the transition from semiconducting to semi-metallic. Due to the less dispersive phonon bands and the decrease in the number of phonon channels of CGNRs, they are found to have the lower phonon thermal conductance than ZGNRs. Modulation of CGNRs can produce over tenfold improvement of the maximum of ZT compared to ZGNRs. This improvement is due to the promotion of the Seebeck coefficient together with the degradation of the phonon thermal conductance of CGNRs compared to ZGNRs. [ABSTRACT FROM AUTHOR]

Phonon diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles, such as voids or amorphous inclusions. The diffraction patterns due to these nano-architectured systems of the same scale as the phonon wavelengths are similar to the ones predicted by the simple Fresnel–Kirchhoff integral. The few differences between the two approaches are attributed to the nature of the interface and the anisotropy of crystalline silicon. Based on the wave description of phonons, these findings can provide insights into the interaction of phonons with nano-objects and can have applications in smart thermal energy management. [ABSTRACT FROM AUTHOR]

Nitrogen-doped graphene materials hold significant promise for diverse applications owing to their exceptional electrical properties and the tunability of thermal conductivity. Therefore, the non-equilibrium molecular dynamics simulations were used to explore the phonon transport properties of nitrogen-doped graphene nanoribbons. The findings indicate that periodic doping with a small quantity of nitrogen atoms can induce coherent phonon transport, thereby resulting in a substantial reduction in thermal conductivity. Our analysis delves into various phonon and energy transport parameters, including the phonon dispersion relation, group velocity, state density, participation rate, and spectral heat flow. Through this examination, we have elucidated the coexistence and transformation mechanisms of both coherent and incoherent phonon transport under different conditions. Furthermore, our findings revealed a notable trend: once the concentration of nitrogen atoms in the doped atomic layer reaches 37.5%, the reduction in thermal conductivity attains its maximum effectiveness. Beyond this concentration, further increases in the nitrogen atom concentration result in diminishing returns, rendering the reduction in thermal conductivity ineffective. [ABSTRACT FROM AUTHOR]

Understanding the interfacial phonon transport is essential for optimizing the thermal management of microelectronics, especially for high energy density devices. Some calculations have suggested that introducing interfacial defects or disorders will increase the interfacial thermal conductance, which helps heat dissipation, while some studies suggested otherwise. In this work, we introduced substitutional impurities in GaN by growing a ∼2-nm-thick AlxGa1−xN or InxGa1−xN alloyed interlayer at the Al/GaN interface and measured the interface thermal conductance by time-domain thermoreflectance at room temperature. Our results show that substituting Ga atoms near the interface with either lighter Al atoms or heavier In atoms at a nominal concentration of 20% or less will not necessarily change the thermal conductance of the Al/alloy interface but is detrimental to the thermal transport across the total Al/GaN interface, which provides an experimental guideline for the thermal design of GaN-based devices. [ABSTRACT FROM AUTHOR]

Using nonequilibrium molecular dynamics (NEMD) based direct method and spectral energy density (SED) method, we calculate the size-dependent thermal conductivities (TCs) of single layer graphene (SLG), AB-stacked bilayer graphene (AB-BLG), and 21.78 ° twisted BLG (tBLG) in a robust and consistent manner. Our NEMD analysis reveals discrepancies in high TC reported for graphene systems in some of the earlier studies. Similarly, some of the previous SED based studies were done with unreliable SED Φ ′ approach. We conduct size-dependent analysis of the graphene systems by the SED method for the first time and report that bulk TCs for SLG and tBLG systems are nearly the same when calculated by either the direct or the SED method. Contrary to studies that claim that phonon group velocities of AB-BLG and tBLG samples do not change, we find that although average group velocities in SLG and AB-BLG are almost the same, they are around 30% higher when compared to tBLG samples with different twist angles. On the other hand, average phonon lifetimes are almost similar for AB-BLG and 21.78 ° tBLG samples but around 43% lower than the average phonon lifetime of SLG. Together these trends suggest the reason behind the decreasing order of TCs across three systems. We also systematically study the basic phonon mode contributions to TCs and their properties and find that the high-symmetry modes contribute the most in all three systems. [ABSTRACT FROM AUTHOR]

The thermal conductivity of group IV elements—germanium, silicon, and diamond—is described in order to demonstrate various important and interesting aspects of the mechanism of phonon heat transfer in single-crystalline semiconductors and dielectrics. The measured temperature dependence of thermal conductivity κ (T) for these materials reveals different phonon scattering processes that determine thermal conductivity. In addition to the intrinsic processes of phonon–phonon scattering, scattering by isotopes, dopants, free electrons, sample surfaces, the effects of phonon focusing, irradiation with high-energy particles, and phonon hydrodynamics are discussed. [ABSTRACT FROM AUTHOR]

We report the results of measurements of thermal conductivity coefficient dependence on temperature of single crystals of SrIr4In2Ge4 and EuIr4In2Ge4. The measurements were carried out over the temperature range of ∼5–300 K. The EuIr4In2Ge4 crystal, unlike its strontium analog SrIr4In2Ge4, shows an amazing anisotropy: At low temperatures, it displays significantly smaller thermal conductivity in the ab plane than in the direction of c axis, while at the high ones the thermal conductivity in the direction perpendicular to the c axis increases well above that of in the c axis. The observed phenomena may be a result of the interaction of phonons with 1D chains of short-range ordered magnetic moment of europium atoms and the exchange energy between the chains in the paramagnetic phase of EuIr4In2Ge4. [ABSTRACT FROM AUTHOR]

The dynamic interaction between phonons and dislocations in LiF has been studied using molecular dynamics simulations. The simulations have captured the strong dynamic interactions between low-frequency slow transverse acoustic phonons and dislocations that were observed in experiments. Simulation results reveal that the strong dynamic interaction is attributed to resonant interactions between dislocations and slow transverse acoustic phonons. Each dislocation segment is found to possess a set of resonant modes characterized by large-amplitude out-of-phase vibrations of atoms on both sides of the dislocation slip plane. The resonant frequencies associated with these modes exhibit a nearly linear distribution with respect to the mode order. Contrary to previous beliefs, the resonant frequencies of dislocations exhibit only a weak correlation with the dislocation length. Additionally, each dislocation exhibits a dominant resonant mode that corresponds to the strongest vibration mode in response to phonons. This dominant resonant mode is not always the first resonant mode with the lowest frequency. Its specific order depends on the dislocation length. Simulation results have also demonstrated that the resonant modes of dislocations can be influenced by the interactions from neighboring dislocations. [ABSTRACT FROM AUTHOR]

The material dependence of phonon-polariton-based in-plane thermal conductance is investigated by examining systems composed of air and several wurtzite and zinc-blende crystals. Phonon-polariton-based thermal conductance varies by over an order of magnitude (∼ 0.5 – 60 nW/K), which is similar to the variation observed in the materials corresponding to bulk thermal conductivity. Regardless of the material, phonon-polaritons exhibit similar thermal conductance to that of phonons when layers become ultrathin (∼ 10 nm), suggesting the generality of the effect at these length-scales. A figure of merit is proposed to explain the large variation of in-plane polariton thermal conductance that is composed entirely of easily predicted and measured optical phonon energies and lifetimes. Using this figure of merit, in-plane phonon-polariton thermal conductance enlarges with increases in (1) optical phonon energies, (2) splitting between transverse and longitudinal mode pairs, and (3) phonon lifetimes. [ABSTRACT FROM AUTHOR]

Lattice dynamics (LD) enables the calculation of mode-resolved transmittance of phonons passing through an interface, which is essential for understanding and controlling the thermal boundary conductance (TBC). However, the original LD method may yield unphysical transmittance over 100% due to the absence of the constraint of energy conservation. Here, we present a robust LD algorithm that utilizes linear algebra transformations and projection gradient descent iterations to ensure energy conservation. Our approach demonstrates consistency with the original LD method on the atomically smooth Si/Ge interface and exhibits robustness on rough Si/Ge interfaces. The evanescent modes and localized effects at the interface are revealed. In addition, bottom-up analysis of the phonon transmittance shows that the anisotropy in the azimuth angle can be ignored, while the dependency on the frequency and polar angle can be decoupled. The decoupled expression reproduces the TBC precisely. This work provides comprehensive insights into the mode-resolved phonon transmittance across interfaces and paves the way for further research into the mechanism of TBC and its relation to atomic structures. [ABSTRACT FROM AUTHOR]

We demonstrate a non-monotonic evolution of in-plane thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which, in turn, is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite-element modeling is used instead. In the model, average heat resistance is used to incorporate an overall near-surface defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective in-plane thermal conductivity is estimated to be 87, 55, and 117 W/m K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles. [ABSTRACT FROM AUTHOR]

Nonlinear magnonics studies the nonlinear interaction between magnons and other physical platforms (phonon, photon, qubit, spin texture) to generate novel magnon states for information processing. In this Tutorial, we first introduce the nonlinear interactions of magnons in pure magnetic systems and hybrid magnon–phonon and magnon–photon systems. Then, we show how these nonlinear interactions can generate exotic magnonic phenomena. In the classical regime, we will cover the parametric excitation of magnons, bistability and multistability, and magnonic frequency comb. In the quantum regime, we will discuss the single-magnon state, Schrödinger cat state, and the entanglement and quantum steering among magnons, photons, and phonons. The applications of the hybrid magnonics systems in quantum transducer and sensing will also be presented. Finally, we look at the future development direction of nonlinear magnonics. [ABSTRACT FROM AUTHOR]

The all-temperature magnon (ATM) theory [Datta and A. Panda, J. Phys. Condens. Matter 21, 336003 (2009)] has been used to analyze the temperature dependence of magnetization and internal energy components of a mono-domain ferromagnetic solid. One impact of the ATM formulation is that calculated critical exponents are in better agreement with experiments than their counterparts from mean-field and critical phenomenon theories. These exponents can vary from one ferromagnet to another of similar symmetry and dimensionality but differing in spin and can be field-dependent. The ATM finding is that exponent β depends on spin and increases as T approaches TC, whereas the exponent γ is weakly dependent on spin and the applied field but relies on crystal symmetry. The main thrust of the present work has been to derive the thermally averaged spin-center force constants in terms of the baseline related (solid) and exchange-cum-field mediated (magnetic) components and to formulate phonon frequencies and their modifications by magnon–phonon coupling. The derived expressions are suitable for correct quantum chemical evaluation. A detailed calculation on different spin configurations at varying geometries is still hardly possible and beyond the scope of the present work that emphasizes the correctness of formulas and has the significance of explaining properties. The phonon frequency shift due to lattice expansion is always negative. It is also clarified that frequency modification by the magnon–phonon interaction is negative for certain phonon branches near TC, and the ratio of frequency modification and phonon frequency is approximately proportional to the ratio of curvatures of involved energy surfaces. [ABSTRACT FROM AUTHOR]

In this work, we performed transient reflection measurements using the pump–probe protocol to investigate the influence of lattice defects induced by 380 keV argon (Ar) ions on the phonon dynamics of interlayer shearing (E 2 g 1 ) and in-plane carbon stretching (E 2 g 2 ) modes in highly oriented pyrolytic graphite (HOPG). The frequency and decay rate of E 2 g 1 - and E 2 g 2 -mode phonons were changed significantly at the fluence of 1 × 10 14 ions/cm 2. This indicated that significant structural changes in HOPG due to 380 keV Ar-ion irradiation were expressed as changes in the frequency and decay rate of phonons. In HOPG irradiated with 380 keV Ar + at the fluence of 1 × 10 14 ions/cm 2 , our measurement results indicated that compressive and tensile stresses contributed to in-plane and interlayer graphite structures, respectively. [ABSTRACT FROM AUTHOR]

Recent experimental results showed that an electron gas in an asymmetrical double barrier heterostructure can be effectively cooled down under resonant tunneling condition, thus leading to the realization of an electronic cooler. The cooling process is a multi-parameters phenomenon and it is desirable to handle this problem through a reasonably simple approach, in order to understand the role of each parameter. To this end, we present a rate equation modeling of the electron cooling. We model the resonant tunnel injection of the electrons in the well and their thermionic emission assisted by Longitudinal Optical (LO) phonons absorption and emission. The influence of several parameters on the electronic temperature is discussed. This simple model compares rather well to the predictions of non-equilibrium Green function approach and to the experiments. [ABSTRACT FROM AUTHOR]