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Low-dimensional nanostructures, especially one-dimensional materials, exhibit remarkable anisotropic characteristics due to their low symmetry, making them promising candidates for polarization-sensitive photodetection. Here, we present a chemical vapor deposition synthesis method for tellurium suboxide (TeOx), confirming the practicality of photodetectors constructed from TeOx nanowires (NWs) in high-responsivity, broadband, and polarization-sensitive detection. By precisely controlling the thermodynamics and kinetics of TeOx NWs growth, we achieve large-scale growth of TeOx NWs with highly controllable dimensions and propose a method to induce intrinsic built-in strain in TeOx NWs. Photodetectors based on quasi-one-dimensional TeOx NWs with ohmic contact demonstrate broadband spectral response (638–1550 nm), high responsivity (13 700 mA·W−1), and superior air stability. Particularly, owing to the inherent structural anisotropy of the photodetectors, they exhibit polarization-sensitive photodetection, with anisotropy ratios of 1.70 and 1.71 at 638 and 808 nm, respectively. [ABSTRACT FROM AUTHOR]

We demonstrate the change of the sign from negative to positive of the self-powered photovoltaic photocurrent in core–shell n-InGaN/p-GaN nanowire heterojunctions within the visible to UV wavelength range. Such dual-polarity photodetectors are of broad interest to provide extended functionalities for optoelectronic devices, starting with dual-wavelength photodetectors. The physics of the photocurrent sign reversal is understood by a well-balanced selective absorption and photocarrier generation, photocarrier transfer, and thermal excitation paths in the core–shell n-InGaN/p-GaN nanowire functional absorber with different bandgap energies and opposite inner- and surface energy band bendings. The basic dual-wavelength photodetector operation parameters are given. [ABSTRACT FROM AUTHOR]

Solution-processed organic photodetectors (OPDs) with spectral response in the near-infrared (NIR) region have broad applications such as in industries, spectroscopic/medical instruments, communications, image sensing, and environmental monitoring. OPDs capable of selective spectral response are particularly appealing for applications including secure optical data link and color image sensing systems. Here, we report an organic photodetector with a highly selective spectral response to near-infrared radiation without the use of a color filter. The operation of the OPDs takes advantage of a charge collection narrowing effect, resulting in a narrowband response at 760 nm with a full width at half maximum of 47 nm and an external quantum efficiency of 46%. Owing to the features of the narrowband response in NIR, our organic photodetectors are used as optical signal receivers for an optical communication system, which achieves a data transmission rate of 12.6 kB/s with a low bit error rate on the order of 10−4. We further investigated the response bandwidth in devices with different active layer thicknesses and area size and their response bandwidth under different reverse bias conditions as well. The optimized device shows a −3 dB response bandwidth of 3.02 MHz and a data transmission rate of 1.41 Mbit/s. The results highlight the promising potential of the nonfiltered OPDs for a variety of applications, including light communication, short-range data transmission, and image sensing. [ABSTRACT FROM AUTHOR]

The absorption of a free-standing ultra-thin film supporting a single resonant mode is, in principle, limited to 50%. Based on the degenerate critical coupling (DCC) of dipole modes, silicon Mie resonators can overcome the absorption limit and achieve perfect absorption in the green light range. DCC requires that the radiative loss of each dipole mode matches material loss. Due to the material properties of silicon, the material loss varies with wavelength. Therefore, flexible tuning of radiative loss to match the wavelength-dependent material loss is crucial for realizing DCC-based perfect absorbers. In this study, we propose that a 45-degree rotation of cubic Mie resonators enhances the radiative loss of electric dipole mode. Hence, the DCC-based perfect absorption can be extended to the violet light range. In addition to applications in photodetectors and imaging sensor pixels, the proposed perfect absorber has great potential to become nonlinear elements based on the photothermal effect for photonic neuromorphic computing due to its temperature-dependent scattering. [ABSTRACT FROM AUTHOR]

Hyperdoping Si with transition metals to form intermediate bands for infrared absorption has attracted attention recently for producing sub-bandgap photoconductivity. In particular, Si hyperdoped with Au has been demonstrated to exhibit optoelectronic response at 1550 nm. However, the reported external quantum efficiencies (EQEs) are low, and the device fabrication processes had not been optimized. In this paper, we demonstrate a significant improvement in sub-bandgap EQE through modification of the material and device fabrication processes. By increasing the Si:Au layer thickness, modification of device design, and formation of Ohmic contacts, the EQE was measured to be as high as 0.44% at 1550 nm, nearly two orders of magnitude higher than previous reports from similar devices. Additionally, the EQE was measured to be in the 10-3 range for wavelengths as long as 2.4 μ m. The EQE spectrum showed features that were attributed to defect levels from a substitutional Au acceptor defect. The above bandgap EQE showed gain in one device. Thermal annealing at 300 ° C does not improve the efficiency of Si:Au photodiodes. These results demonstrate the viability of Au-hyperdoped Si for infrared detection below the bandgap of Si. [ABSTRACT FROM AUTHOR]

The acid-resistant tungsten trioxide photoelectrochemical solid–liquid ultraviolet (UV) photodetector uses a thin film of tungsten trioxide as the photoelectrode, forming a stable heterojunction with the electrolyte. This study employed band theory and double electron layer theory to analyze the mechanisms underlying the effect of pH on the redox potential and photocurrent, utilizing the ion product constant of water and the Nernst equation. By applying the principles of energy band theory and the two-electron layer model, the electron transfer process was analyzed and explained. These findings hold significant promise for enhancing solid–liquid heterojunction UV photodetectors. Tungsten trioxide has fast response and high sensitivity under extreme conditions. The device performance of WO3 nanosheets fabricated by annealing at 300 °C for one hour is excellent, including a rise time of 0.7 s, decay time of 6.8 s, photosensitivity of 1.90, and photoresponsivity of 2.31 mA/W. 0.5M sulfuric acid produced the highest photocurrent (5.46 μA) and sensitivity (14.07). This material has potential applications in optoelectronics, catalysis, sensing, water treatment, and air purification. [ABSTRACT FROM AUTHOR]

In recent years, inorganic lead-free perovskite materials have garnered attention for their non-toxicity, high carrier mobility, and strong light absorption capabilities, showing promising application prospects in photoelectric sensing. CsCu2I3 perovskite has been mentioned as one of the representatives and as a potential material for short-wavelength optoelectronic devices. This study employs a one-step chemical vapor deposition (CVD) process to fabricate CsCu2I3 thin films, which exhibit a vibrant yellow emission at 560 nm. Ultraviolet photodetectors utilizing CsCu2I3 films demonstrate an exceptional responsivity and a detectivity of 1.43 A/W and 1.15 × 1012 Jones (254 nm, 5 V bias), along with rapid response times (trise ≈ 50 ms, tdecay ≈ 70 ms). Moreover, this work examines the factors affecting device performance, including wavelength, operating voltage, and film thickness. It presents a straightforward, ecofriendly CVD method for producing lead-free perovskite films and optoelectronic devices, which has significant implications for the development of lead-free perovskite-based photoelectric technologies. [ABSTRACT FROM AUTHOR]

Light absorption enhancement in a 1.5 μm thick mercury–cadmium–telluride (Hg0.762Cd0.238Te, MCT) layer at room temperature utilizing 1D dielectric grating at mid-wave infrared (MWIR) wavelengths (3–5 μm) has been theoretically investigated. The optimized dielectric grating facilitates light diffraction and scattering into the MCT-absorbing waveguiding layer resulting in an increased lateral optical path. The light absorption was improved from ∼37.5% to ∼71% (TE) and ∼70% (TM) at normal incidence. With enhanced absorption, the photocarrier generation rate in the thin layer would be comparable to a bulk 5 μm thick MCT layer. A ∼3× reduction in the MCT layer thickness without compromising absorption has the potential for realizing infrared photodetectors with improved sensitivity at conventional operating temperatures and/or elevated operating temperatures. [ABSTRACT FROM AUTHOR]

Photomultiplication-type organic photodetectors (PM-OPDs) have been stimulating more and more researchers' interest owing to their extremely high external quantum efficiency (EQE). To prepare high-performance PM-OPDs with a broadband spectral response range from visible to near-infrared and investigate the role of energy levels of the donor and acceptor on its responsiveness, the non-fullerene acceptor Y6 was added into the P3HT:PC71BM system in this work. The photomultiplication phenomenon with the highest EQE has been achieved under both forward and reverse bias when the ratio of Y6 in two acceptors approaches 80 wt. %. The introduction of Y6 not only promotes the formation of moderate hole traps in the active layer but also results in an appropriate amount of low injection barriers to allow more electron injection from the external circuit. Therefore, the spectral response of the device with 80 wt. % Y6 has been broadened from 750 to 950 nm, and the champion EQE of 15 691% at 10 V and 7639% at −20 V at 850 nm was achieved. This work reveals the importance of hole-trapping ability determined by the energy level difference between the donor and the acceptor for the selection of the multiplication system and provides a scheme for the design of high-performance broadband PM-OPDs. [ABSTRACT FROM AUTHOR]

Two-dimensional molybdenum disulfide (MoS2) has been proved to be a good candidate in photodetectors, and MoS2/graphene (MoS2/G) heterostructure has been widely used to expand the optical response wavelength of MoS2. To clarify the carrier transfer dynamics in the MoS2/G heterostructure, time-resolved transient absorption and two-color pump–probe measurements are performed. By comparing the carrier dynamics in MoS2 and MoS2/G under different pump wavelengths, we find that interfacial excitons are formed in the heterostructure, and fast hot carriers transfer (<200 fs) from graphene to MoS2 are observed. The results indicate that the formed heterostructure with graphene can not only expand the optical response wavelength of MoS2 but also improve the response time of the device in the near-infrared region. [ABSTRACT FROM AUTHOR]

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation. [ABSTRACT FROM AUTHOR]

The phase diagrams of photoreflectance spectra were investigated for an InGaAs two-color infrared photodetector. The diagrams for a high excitation intensity revealed that the spectrum is multi-component. The origin of these components was investigated, and the photoreflectance spectra and phase diagrams were also measured for an angle-polished version at different depths. With the help of the polished sample, the variation of the phase delay angles and the trapping time constants was tracked for different depths. Additionally, the polished version enables us to find a confirmation for the origins of the multi-component nature of the whole phase diagram. It can be concluded that when the phase delays or time constants of various components are very close, more attention should be paid to interfering with the phase-sensitive investigations of layered materials. As a main result, the consistency of the phase delay with interface trap densities was confirmed qualitatively. Using a reciprocal space map of the sample, this result can be a piece of experimental evidence for a correlation between the photoreflectance time constant and trap densities in the junctions. This non-contact method enables the characterization of layered devices, offering a valuable tool for achieving high-performance devices. [ABSTRACT FROM AUTHOR]

Self-powered photodetectors (PDs) with distinguishable wavelength detection have great application potential in intelligent optoelectronics. However, slow response speed, low responsivity, and signal interference prevent its development and applications. Here, an asymmetric bipolar p-NiO/n-ZnO/p-Si heterojunction is designed as a wavelength-distinguishable PD by using two tandem p–n junctions to reduce the wavelength interference and effectively separate photo-generated carriers. Bidirectional transient photocurrents are achieved in the external circuit for ultraviolet and visible detection by smartly using the pyro-phototronic effect induced by the variations of spontaneous polarization and interface-induced polarization within the p–n–p junction. The transient peak-to-peak current are thus significantly improved by 2310% for 325 nm lasing and by 5950% for 442 nm lasing. This approach can be used to realize wavelength-distinguishable detection through flexibly selecting materials and using the pyro-phototronic effect. The designed PD might have potential applications in the fields of environmental detection, smart imaging, and intelligent optoelectronics. [ABSTRACT FROM AUTHOR]

The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors (PDs). We prepare a wearable real-time UV PD based on hydrogenated titanium dioxide film synthesized by radio frequency atmospheric pressure plasma. The conductivity of our hydrogenated titanium dioxide is improved to 10.2 S cm−1, nine orders of magnitude higher than that of pristine titanium dioxide after 10 min plasma treatment. Plasma hydrogenation disrupts the surface crystal structure, introducing oxygen vacancies (OVs) that create self-doped titanium(III) and titanium(II) species. First-principles calculations indicate that the OVs raise the Fermi level of TiO2 and distort the lattice locally. Our optimized film has a distinctive periodic switching characteristic under intermittent illumination; its responsivity is good from 280 to 400 nm, peaking at 632.35 mA W−1 at 365 nm. The fabricated wearable sensor based on the optimized film effectively monitors the daily variation of ambient UV intensity in three typical weather types, transferring its data to a smartphone via Wi-Fi. [ABSTRACT FROM AUTHOR]

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III–V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III–V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III–V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III–V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III–V semiconductors. Therefore, the recent development of III–V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III–V semiconductor with different detection range is discussed. First, the bandgap of III–V materials and synthesis methods of III–V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III–V materials for photodetectors are presented. [ABSTRACT FROM AUTHOR]

[Display omitted] We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol–gel technique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination. It is investigated that the BaO nanoparticles with co-doping reveals a highly reduced band gap and exceptional photoluminescence properties as compared to the pristine BaO nanoparticles due to hindering carrier,s recombination for Ultra-violet (UV) photodetectors. The optical studies revealed that the addition of co-dopants in BaO host material creates new energy sites, so the band gap declines up to 1.31 eV as compared to that of pristine BaO (1.36 eV). The photoluminescence properties recorded with photoluminescence (PL) spectroscopy were recorded which revealed the decrease in PL intensity due to the hindering of carriers recombination with the addition of co-dopant metal ions. Furthermore, the inclusion of co-dopant metals results in an improvement in electrical conductivity because of a decline in carrier recombination, according to an I-V characteristic study. This factor contributes to enhance the photoluminescence properties of BaO which, in turn, contributes to enhance the sensing capability of the photodetector device. These obtained features modify optoelectronic properties are far superior as compared to that of previously reported literature on BaO nanomaterials, and the synthesized BaO semiconductor material becomes a potential candidate for efficient use in the ultraviolet (UV) photodetectors device applications. [ABSTRACT FROM AUTHOR]

Realization of high- k dielectric oxide material-based devices such as photodetectors (PDs)/gas sensors fabricated on silicon substrate seems to be the utmost promising as a cost-effective approach to use in next generation optoelectronic field. We have explored metal/CeO 2 /p-Si heterojunction to construct as a broadband (BB) PD and CO 2 gas sensor device. The effect of post-annealing procedure on photodetection and CO 2 gas sensing characteristics were correlated using AFM, XRD, XPS, Raman and UV–Vis studies. At 0 V bias, the fabricated as-deposited Au/CeO 2 /p-Si PD device exhibits outstanding performance with enhanced responsivity of 85 AW−1 (at 910 nm), detectivity of 1.36×1015 Jones (at 850 nm), EQE of 1.3×104 % (at 850 nm), faster rise and fall times of 124 ms and 107 ms (at 900 nm). On the other hand, the photodetection characteristic parameters were slightly deteriorated as a function of annealing with respect to the as-deposited device. One of the causes for this fact was attributed to the increase in rms surface roughness (AFM) and decrease in absorbance of CeO 2 thin film (UV–Vis). Additionally, Ag/CeO 2 /p-Si heterojunction was studied as a CO 2 gas sensor and evaluated response/recovery times as a function of CO 2 gas concentration. Sensing responses of CeO 2 as-deposited, CeO 2 -400, CeO 2 -500, CeO 2 -600 and CeO 2 -700 °C were around 58, 60, 62, 81 and 90 %, respectively, when exposed to 200 ppm of CO 2. Thus, we validate that the prospect of integrating enhanced performance in BB PDs and CO 2 gas sensors using metal/CeO 2 /p-Si heterojunction could serve as a basic building block in near future optoelectronic applications. Furthermore, the effect of post-annealing temperature on the morphological, structural, BB photodetection and CO 2 gas sensing properties were discussed in detail. [ABSTRACT FROM AUTHOR]

In this report, we have synthesized an environmentally friendly hybrid organic–inorganic layered two-dimensional (2D) lead-free perovskite nanomaterial. The synthesized perovskites, namely (OleylAm)2SnI4 (MHP1), exhibit outstanding water stability and emit luminous red light. The photodetector constructed using our material showcases superior characteristics, including a faster response than comparable devices and improved rise and fall times compared to other 2D perovskite nanomaterials. [ABSTRACT FROM AUTHOR]

The relentless advancement of van der Waals (vdW) heteroepitaxy technology has charted an expansive horizon for the integration and functionalization of heterogeneous materials. In this research, a 2D/3D vdW heterojunction photodetector based on p‐W0.09Re0.91S2/n‐GaN integrated on a Free‐standing (FS)‐GaN substrate, encompassing horizontal, quasi‐vertical, and vertical structures is have successfully fabricated. By incorporating a suite of performance enhancement strategies, including mixed‐dimensional stacking, p‐type doping, type‐II band alignment, and vertical structure design, the developed vertical structure photodetector has exhibited exceptional performance. Specifically, the detector achieves a high Responsivity of up to 497.60 A W−1, an impressive specific Detectivity of 8.41 × 1013 Jones, and a fast response speed (rise/decay time of 10 ms/20 ms). Additionally, the device is successfully applied in the realm of single‐pixel imaging, substantiating its potential for practical applications. The findings of this work not only signify notable strides in integration and optoelectronic performance within the optoelectronic device domain but also portend novel breakthroughs in imaging technology applications, bestowing renewed vigor and endless potential upon the evolution of this field. [ABSTRACT FROM AUTHOR]

We report all-soft vertical organic photodetectors composed of only soft components. Chemically and physically enhanced interfacial adhesion between layers enables robust operation under mechanical deformation. Their excellent light-sensing capability and deformable features, combined with powerless operation, promise significant advancements in optoelectronic applications. [ABSTRACT FROM AUTHOR]

Absorbing near‐infrared (NIR) photons, with longer wavelengths, in atomically thin monolayer MoS2 presents a significant challenge due to its weak optical absorption and narrow absorption bands. Consequently, MoS2‐based photodetector devices often experience low responsivity and a limited detection window. Herein, a novel InAs@ZnSe core@shell/1L‐MoS2 heterostructure, leveraging InAs@ZnSe as the primary infrared‐absorbing material and exploiting the formation of a type‐II heterostructure is showcased. Steady‐state and time‐resolved spectroscopy, along with optoelectronic characterization, are employed to investigate photo‐induced charge transfer dynamics. The results show efficient hole transfer to InAs@ZnSe upon excitation of both materials. Instead, with selective excitation of InAs@ZnSe, electron transfer is observed from InAs@ZnSe to the 1L‐MoS2. The heterostructure demonstrates a broadband photoresponse spanning the wavelength range of 300 to 850 nm, exhibiting a Responsivity of ≈103 A/W and Detectivity of ≈1011 Jones. The signal‐to‐noise ratio substantially increases by 3 to 4 orders of magnitude for 700 and 850 nm excitation compared to pristine 1L‐MoS2. The enhancement in photoresponse and signal‐to‐noise ratio is attributed to increased absorption, which helps eliminate defect and trap states, thereby promoting the photogating effect. [ABSTRACT FROM AUTHOR]

The perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near‐infrared regions. This review presents the status and possible future development of the perovskite devices such as solar cells, photodetectors, and light‐emitting diodes. The fundamental properties of perovskite materials related to their effective device applications are summarized. Since the development of the perovskite technology is mainly driven by the revolutionary evolution of the semiconductor perovskite solar cell as a robust candidate for next‐generation solar energy harvesting, this topic is considered first. The device engineering of various perovskite photodetector structures, including perovskite quantum dot photodetectors, is then discussed in detail. Their performance is compared with the current commercial photodetectors available on the global market together with their challenges. Finally, the considerable progress in the fabrication of the perovskite light‐emitting diodes with external quantum efficiency exceeding 20% is presented. The paper is completed in an attempt to determine the development of perovskite optoelectronic devices in the future. [ABSTRACT FROM AUTHOR]

In this paper, we reported the fabrication of improved CH3NH3PbI3/Si heterojunction photodetectors (PDs) achieved by passivating the interfacial defects by a low-temperature atomic layer deposition-grown thin amorphous HfO2 layer. The results suggested that the HfO2 thin layer effectively passivated the surface defects of Si and slightly improved the qualities of CH3NH3PbI3 thin films in terms of increasing the grain sizes. Current–voltage measurements suggested that the HfO2 thin layer suppressed interfacial Shockley–Read–Hall recombination, which decreased the dark current and simultaneously increased the photocurrent. However, a thick HfO2 layer resulted in a decrease in the photocurrent because of the insulting nature of HfO2. A champion performance was obtained by employing a 5 nm HfO2 layer, where the responsivity and detectivity were 0.6 mA/W and 8.0 × 1010 Jones, respectively, which are two times and four times as high as those PDs without the HfO2 layer. The results will provide a simple strategy for improving the performance of perovskite/Si heterojunction PDs in the future. [ABSTRACT FROM AUTHOR]

Effective suppression of dark current is essential for improving the performance of bulk defect-mediated absorption (BDA) photodetectors. Blocked impurity band (BIB) infrared detectors have been developed and utilized from mid-infrared to far-infrared wavelength regions for low noise. In this work, a blocking layer of dark current was applied to a BDA short-wave infrared (SWIR) photodetector, emulating the concept of BIB detectors. ZnO was chosen as the blocking layer to impede the transport of electrons from the bulk defect levels due to its wide bandgap and to allow the photocurrent to remain nearly unaffected by proper positioning of the conduction band minimum. After introducing the ZnO blocking layer, the dark current density of the photodetector was reduced by two orders of magnitude, and the specific detectivity was enhanced by one order of magnitude. The effects of TiO2 and WO3 as blocking layers were also investigated and compared with ZnO. This work offers an effective method for enhancing detectivity in SWIR BDA photodetection by suppressing the dark current efficiently. [ABSTRACT FROM AUTHOR]

Blackbody‐sensitive uncooled infrared photodetectors with ultra‐broadband and ultrafast photoresponse have a profound impact on many areas of modern science and technology. However, it is a big challenge for both traditional photodetectors and emerging low‐dimensional ones to simultaneously have all the above characteristics. Here, this challenge is addressed by establishing a Te/WTe2 heterostructure photodetector. The built‐in field of the heterostructure and the crossing conduction and valence bands of WTe2 jointly result in a high responsivity and a visible‐to‐long‐wavelength‐infrared photoresponse range. The peak responsivity (at the 3.3 µm wavelength) reaches 914 mA W−1 at zero bias and 8.51 A W−1 at 2 V bias. Further, the joint action coupled with the high mobility of Te and WTe2 promotes the 3‐dB bandwidth to 153 kHz. The self‐powered blackbody responsivity and specific detectivity reach 235.7 mA W−1 and 1.1 × 108 cm Hz1/2 W−1, respectively. The former increases to 5.82 A W−1 at 1 V bias. Moreover, this device is polarization‐sensitive with a contrast ratio of 2. This work reveals the potential of the Te/WTe2 heterostructure for high‐performance room‐temperature infrared photodetectors. [ABSTRACT FROM AUTHOR]

To boost the power conversion efficiency of silicon/perovskite tandem solar cells, pyramid‐textured structures have been investigated and introduced into devices. However, high‐quality pyramid‐shaped single crystal preparation is an obstacle in tandem device development. Perovskite crystals obtained using general methods are cubic because of their structural symmetry and rapid growth rate. In this study, based on mass transfer boundary layer theory, a pyramid‐shaped perovskite single crystal is successfully obtained using an asymmetrically spatial confinement‐induced crystallization method. The synthesized pyramid crystals exhibited high crystallinity and enhanced optical absorption. A photodetector constructed using the as‐grown crystal exhibited high‐performance properties, including a responsivity of 9.4 A W−1, photo‐to‐dark current ratio of 2.3 × 104, and detectivity of 2.1 × 1011 Jones. Its unique insensitivity to the incident photon direction is also characterized. The flexible photodetector also exhibited excellent responsivity under different bending curvature radii. Additionally, the light‐trapping effect and absorption superiority of pyramid crystals over cuboid crystals are well established based on a semi‐empirical analytical model. This breakthrough in pyramid‐shaped perovskite crystal preparation provides a promising approach for the development of novel tandem solar cells and other optoelectronic devices. [ABSTRACT FROM AUTHOR]

Thin film lithium niobate is one of the most crucial platforms in the next generation of integrated optoelectronics because of its ability to integrate tight optical confinement, low optical loss, and active optical functions. A current challenge in the field of thin film lithium niobate photonics is the development of high‐performance photodetectors to achieve multifunctional photonic integrated circuits. This study introduces a high‐performance MoTe2 photodetector integrated on a thin film lithium niobate waveguide. The photodetector achieves the lowest dark current and highest on/off ratio among waveguide‐integrated photodetectors on a thin film lithium niobate platform. Due to a slight asymmetry in the behavior of the two electrode contacts of the device, the photodetector also achieves self‐driven. At zero bias and a wavelength of 1310 nm, a dark current of ≈20 pA, and an on/off ratio exceeding 105 are achieved. At a bias voltage of 1 V, the measured dark current, responsivity, and on/off ratio are 1.13 nA, 309 mA/W, and 1.8 × 104, respectively. Notably, the device exhibits fast rise and fall times of 9.3 and 13.5 µs, respectively, accompanied by a high detectivity of 2.58 × 1011 W−1. [ABSTRACT FROM AUTHOR]

Lead‐based halide perovskites have gained significant prominence in recent years in optoelectronics and photovoltaics, owing to their exceptional optoelectronic properties. Nonetheless, the toxicity of lead (Pb) and the stability concern pose obstacles to their potential for future large‐scale market development. Herein, stable lead‐free Cs3Bi2I9 (CBI) films are presented with smooth and compact morphologies synthesized via chemical vapor deposition (CVD), demonstrating their application as an UV photodetector in a self‐powered way. The self‐powered photodetectors (SPDs) exhibit remarkable characteristics, including a responsivity of 1.57 A W−1 and an impressive specific detectivity of 3.38 × 1013 Jones under the illumination of 365 nm at zero bias. Furthermore, the SPDs exhibit a nominal decline (≈2.2%) in the photocurrent under constant illumination over 500 h, highlighting its impressive long‐term operational stability. Finally, the real‐time UV‐detection capability of the device is demonstrated by measuring the photocurrent under various conditions, including room light and sunlight at different times. These findings offer a new platform for synthesizing stable and high‐quality perovskite films, and SPDs for advancing the development of wearable and portable electronics. [ABSTRACT FROM AUTHOR]

Integrated sensing and communications (ISAC) based on radio frequency (RF), merging the sensing and communication functionalities into a single platform, can effectively address the increasing demand for spectrums due to the proliferation of wireless devices. However, the ISAC commonly suffers from spectrum scarcity, high power consumption, and limited sensing capabilities. Here flexible self‐powered optical ISAC (O‐ISAC) is proposed and fabricated by preparing a high‐speed near‐infrared organic photodetector (NIR OPD) that exhibits a broad photodetection ranging from 300 to 1100 nm, specific detectivity over 1013 Jones, and −3 dB cutoff frequency over 1 MHz (λ = 1050 nm) in self‐powered mode, ranking as the fastest among self‐powered NIR OPDs in the region above 1000 nm. The device is fabricated by incorporating a narrow‐bandgap non‐fullerene acceptor BTPSV‐4Cl into the PCE‐10:BTPSV‐4F system to finely tune the film morphology and reduce trap states and energetic disorder. The semitransparent and regular NIR OPDs are integrated on one substrate to fabricate flexible O‐ISAC, realizing simultaneous accurate vital signs monitoring and high‐speed data transmission under ambient, sunlight, and NIR lighting conditions. It is envisioned that the proposed O‐ISAC will inspire a new generation of wireless technology to address RF limitations for emerging applications, such as intelligent healthcare, autonomous vehicles, and security. [ABSTRACT FROM AUTHOR]

The iodide precursor oxidation has persistently plagued solution grown iodine‐based perovskite single crystals (IPSCs) that inevitably introduce undesirable triiodide ion (I3−) defects and severely hindering crystal quality, despite IPSCs having garnered remarkable progress in multifarious photoelectronic applications. In this work, the spontaneously inhibited iodide oxidation is discovered in an eco‐friendly solvent, γ‐Valerolactone (GVL), and demonstrates a universal solution approach for fabricating high‐quality IPSCs. Compared to the routine γ‐Butyrolactone (GBL) system, GVL provides a lowered growth temperature and a significantly broadened inverse temperature operation window, thereby improving the theoretical utilization rate of perovskite precursors up to 88.6%. More importantly, due to its higher open‐ring hydrolysis energy, GVL can spontaneously inhibit the iodide precursors oxidation without any additional reductant and therefore effectively prevent the forming I3− defects. Typically, the as‐fabricated MAPbI3 single crystal possesses an extremely low trap density of 3.57 × 108 cm−3 and a high carrier mobility‐lifetime (µτ) product of 2.74 × 10−3 cm2 V−1, which enables its photodetection capabilities to be on a par with the state‐of‐art MAPbI3 single crystal photodetectors. This work paves an efficacious and green pathway for high‐quality IPSC fabrication toward advanced optoelectronic utilizations. [ABSTRACT FROM AUTHOR]

Timely and accurate detection and recognition of traffic lights are critical for Autonomous Vehicles (AVs) to avoid crashes due to red light running. This paper integrates a new robust machine learning based solution by combining a Convolutional Neural Network (CNN) with computer vision techniques to achieve a real-time traffic light detector. The proposed detection and recognition algorithm is capable of recognizing traffic lights on low-power small-form platforms, which are lightweight, portable, and can be mounted on AVs in daylight scenarios. The LISA open-source dataset is utilized with augmentation methods to increase the accuracy of the solution. The proposed approach achieves 93.42% of accuracy at a speed of 30.01 Frames Per Second (FPS) on an NVIDIA Jetson Xavier platform without using hardware accelerators such as FPGA. This solution is expected to promote the quicker adoption and wider deployment of AVs by increasing the chances of avoiding crashes and ultimately saving lives. [ABSTRACT FROM AUTHOR]

Organometallic halide perovskites have shown significant promise for applications in optoelectronics and photovoltaics in recent years. This research looks into the performance of bulk heterojunction-based photodetectors (PDs) based on the active layer of a CH3NH3PbI3:PCBM bulk heterojunction (BHJ). We assessed the impact of PCBM concentration in CH3NH3PbI3:PCBM BHJ on the electrical performance of the PDs. We found that the BHJ PD with a 4% PCBM concentration had the strongest capability to reject noise, as demonstrated by its superior ratio of photocurrent to dark current. Moreover, the PD with a 4% PCBM concentration in the active layer outperforms pristine CH3NH3PbI3-based PDs in terms of optoelectronic performance, showing greater responsivity and detectivity. The improved optoelectronic performance of BHJ PD is due to increased interfacial area, higher electron extraction and a decrease in traps and defects. The analysis of dark current–voltage curves reveals a significant reduction in charge recombination for BHJ devices, supporting the elimination of traps and defects by the inclusion of PCBM. The PD’s impedance study unveils that the incorporation of PCBM enhances charge transfer and effectively suppresses charge recombination, leading to enhanced optoelectronic performance. [ABSTRACT FROM AUTHOR]

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The rapidly developing Artificial Intelligence era has an increasing demand for high‐performance organ‐on‐a‐chip systems, especially the vision system, which is the most essential perceptual system for human beings. However, traditional artificial vision systems require multiple functional components, which are not favorable for integration. Neuromorphic visual sensors (NVSs) inspired by the human retina combine visual sensing and multiple preprocessing functions. However, most NVSs require complex structures to achieve both photo sensing and memory, and are difficult to be large‐scale fabricated. Here, a novel In2O3‐Ga2O3 (InGaO) thin‐film‐based NVS with both high photosensitivity and superior photomemory performance is proposed, which can avoid the complex multilayer structure. The device possesses high accuracy optical communication and multiple retina‐like functions. Notably, this InGaO NVS achieves sensing of most UV light, and it has been experimentally confirmed to have excellent photoelectric synaptic performance under both 254 nm and 365 nm UV illumination. This work provides a feasible strategy to assist the human eye in sensing invisible UV light. [ABSTRACT FROM AUTHOR]

Organic photodetectors (OPDs) have achieved rapid development due to the emergence of organic semiconducting materials with high absorption coefficient and tunable optical bandgap, as well as the progress in device physics and engineering. The working mechanism and fundamental parameters of OPDs are briefly introduced. Some smart strategies for realizing high performance photovoltaic type narrowband OPDs (PV‐NB‐OPDs) and photomultiplication type narrowband OPDs (PM‐NB‐OPDs) are comprehensively reviewed. The recent progress of PV‐NB‐OPDs and PM‐NB‐OPDs is systematically introduced from fundamentals to prospects, exhibiting colorful development and application potential in full‐color imaging, spectroscopic photodetection, medical monitoring, and optical communication, which may promote their rapid development for the potential applications. [ABSTRACT FROM AUTHOR]

Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post‐growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice‐matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large‐area, self‐aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on‐chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long‐term stable response to UV–vis–NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large‐scale monolithic integration of guided nanowires as flexible devices. [ABSTRACT FROM AUTHOR]

The aim of this study was to explore the feasibility of a time-resolved reflectance imaging system employing a single photodetector to assess the activity of caries lesions that exploits the differential absorption of water at 1300 and 1950 nm. The time-resolved reflectivity of 10 active and 10 arrested lesions on the proximal surfaces and 5 active and 5 arrested lesions on the occlusal surfaces of extracted teeth were monitored simultaneously at 1300 and 1950 nm during forced air drying for 60 s. The presence of a highly mineralized surface zone measured with microcomputed tomography (microCT) was used to indicate lesion activity. Multiple kinetic parameters were extracted from the acquired short wavelength infrared (SWIR) intensity versus time dehydration curves and used to assess lesion activity. Differences in the reflectivity between curves acquired at 1300 and 1950 nm due to differential absorption of water provided improved discrimination between active and arrested lesions over the use of 1950 nm alone. This study demonstrates that it is feasible to use a device with a single photodetector operating at 1950 nm to collect dehydration curves for the assessment of lesion activity and that a system employing two SWIR wavelengths with differential water absorption can improve the performance of lesion activity assessment. [ABSTRACT FROM AUTHOR]

Owing to their consistently emerging applications in modern photonics, highly sensitive and rapid mid‐infrared (MIR) photodetectors, operating at high temperatures, are of great significance. Herein, a novel PbTe/Ge heterostructure is introduced. Notably, the discovery of a 2D electron gas (2DEG) system on the surface of the PbTe layer is experimentally identified for the first time. A high‐performance PbTe/Ge heterostructure MIR photodetector utilizing a plasmonic photovoltaic effect is developed by employing asymmetric electrodes. The photodetecting device demonstrates an exceptionally high detectivity of 1.1 × 1011 Jones along with a short response time of 15 ns at room temperature. Additionally, the proposed plasmonic photovoltaic mechanism of the device is investigated and mainly ascribed to the propagating plasmons, generated by the coupling of the 2DEG with incident MIR photons. Moreover, a linear detector array (LDA) of PbTe/Ge is demonstrated for a thermal imaging application, which exhibits promising high‐quality real‐time imaging via the 2D photodetector arrays on Ge‐based integrated circuits. This work opens up a new way for the development of next‐generation, advanced MIR photonic devices and integrated photonic systems. [ABSTRACT FROM AUTHOR]

The rapidly evolving communication field demands higher data capacity, faster transmission speeds, and improved anti-interference capabilities. However, the physical limitations of silicon-based photonics technology hinder the realization of photodetectors and other active devices. The discovery of two-dimensional (2D) materials, such as graphene, has opened promising opportunities for on-chip photodetection, showcasing distinctive physical and chemical properties and ultrathin nature. In this review, we first describe several representative 2D materials, including graphene, black phosphorus, and transition metal dichalcogenides (TMDCs). These materials offer diverse band structures and properties, presenting a plethora of options for varied applications. Then we highlight the utilization of these 2D materials in the development of high-performance photodetection devices, including photodiodes, field-effect transistors, and photodetectors. Furthermore, we delve into the practical applications of photodetectors, including room-temperature imaging, visual sensors, spectrometers, ranging, and other optoelectronic integrated systems. These real-world applications vividly demonstrate the versatility and potential of 2D materials across diverse fields. Overall, the unique structures and properties of 2D materials offer new possibilities for applications across various domains. Future research should be devoted to further explore the properties and applications of 2D materials to advance their development in the field of science and technology. [ABSTRACT FROM AUTHOR]

Photodetection in the near- and mid-infrared spectrum requires a suitable absorbing material able to meet the respective targets while ideally being cost-effective. Graphene, with its extraordinary optoelectronic properties, could provide a material basis simultaneously serving both regimes. The zero-band gap offers almost wavelength independent absorption which lead to photodetectors operating in the infrared spectrum. However, to keep noise low, a detection mechanism with fast and zero bias operation would be needed. Here, we show a self-powered graphene photodetector with a > 400 GHz frequency response. The device combines a metamaterial perfect absorber architecture with graphene, where asymmetric resonators induce photothermoelectric directional photocurrents within the graphene channel. A quasi-instantaneous response linked to the photothermoelectric effect is found. Typical drift/diffusion times optimization are not needed for a high-speed response. Our results demonstrate that these photothermoelectric directional photocurrents have the potential to outperform the bandwidth of many other graphene photodetectors and most conventional technologies. Self-powered graphene photodetectors based on the photothermoelectric effect (PTE) could provide low-noise operation in the telecom and mid-infrared ranges, but their bandwidth is usually limited. Here, the authors report the realization of PTE graphene photodetectors integrated with a metamaterial perfect absorber, showing a 3-dB bandwidth above 400 GHz. [ABSTRACT FROM AUTHOR]

The NUOVA OFFICINA ASSERGI (NOA) is a new facility for the production and integration of large-area silicon photodetectors operating at cryogenic temperatures. Silicon photomultipliers are proving to be a promising technology for next-generation experiments searching for rare events in underground laboratories. New photosensor technology with high performance at cryogenic temperature has been developed by Fondazione Bruno Kessler (FBK) and integrated at Laboratori Nazionali del Gran Sasso (LNGS) into large-area optical units, thus opening the frontiers toward the realization of scalable liquid argon experiments probing dark matter. The massive production of such detectors is now feasible in NOA, a clean room of 421 m2 designed to operate in a radon-free mode. NOA, commissioned and operational at LNGS, hosts the most advanced packaging machines and electronic test facilities for the integration of silicon devices in a dust-controlled environment. The infrastructure layout is split into two experimental areas: one for the production of electronic devices and cryogenic temperature tests and the other for operating with large detector installations. The NOA facility can be operated with a radon abatement system, making it a unique facility for packaging and testing SiPM-based photosensors and for assembling detector components in a radon-free environment. Therefore, NOA supports the deployment of underground experiments at LNGS and the development of new technologies for the search of rare events, such as dark matter and neutrinoless double-beta decay. [ABSTRACT FROM AUTHOR]

Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives. [ABSTRACT FROM AUTHOR]

The development of flexible photodetectors is crucial for advancing wearable electronics and optoelectronic systems, but it faces significant challenges, such as maintaining high performance under mechanical strain and achieving cost-effective fabrication. Here, we fabricated a photodetector using poly(N-vinylcarbazole) (PVK) microwire arrays through a template-assisted method. The resulting devices exhibit high responsivity and exceptional mechanical flexibility, with the ability to maintain their photoelectric properties even when bent up to 150°. The photodetector exhibits high responsivity of 0.9 A W−1 and detectivity of 1.6 × 1010 Jones. This study demonstrates the potential of PVK microwire arrays for imaging applications, highlighting their suitability for integration into flexible and wearable devices. [ABSTRACT FROM AUTHOR]

We report an obvious improvement in the performance of a separated absorption charger-layer multiplication Ge/Si avalanche photodetector, achieved by passivating the sidewalls with a low-temperature remote oxygen plasma (ROP) treatment. The dangling bonds on the Ge surface can be efficiently passivated by the formation of an ideal Ge/GeO2 interface. With ROP passivation, the leakage current of the device shows a three- to fourfold decrease at 300 K, resulting in a dark current (I dark) of 3.5 × 10−6 A at 90% avalanche voltage (V br) and 3.4 × 10−7 A at punch-through voltage (V puhch-through) for the 26 μ m-diameter device. A reduction of over tenfold is demonstrated at 200 K and the passivation mechanism is revealed. In addition, a multiplication gain of 94 is obtained under 1550 nm illumination. The device with ROP passivation shows an improved gain bandwidth product of 190 GHz. The enhanced high-frequency response of the device with ROP passivation can be attributed to the alleviation of the retarding effect caused by the interface state on the sidewalls. Without using a trans-impedance amplifier, an opening eye diagram at 28 Gbps is demonstrated, indicating reliable device transmission performance. [ABSTRACT FROM AUTHOR]

Lead-free halide perovskites have attracted widespread research interest due to their excellent optoelectronic properties and environmental friendliness. As one of the bismuth iodide compounds, Cs3Bi2I9 perovskite has been extensively explored in the field of photovoltaic devices and radiation detectors due to their non-toxic lead-free components and excellent stability. In this work, we successfully grow large-sized Cs3Bi2I9 single crystals (SC) with (l 00) and (00 l) crystal exposure facets by inverse temperature crystallization method. Under 525 nm light illumination with the intensity 15 mW cm−2 and 7 V bias, the (l 00) Cs3Bi2I9 SC shows 2 times higher photocurrent, 3.6 times higher responsivity, and 2.8 times higher detectivity than the (00 l) Cs3Bi2I9 SC, respectively. Superior response time in the scale of millisecond is obtained in both (l 00) and (00 l) Cs3Bi2I9 SCs. Based on the first-principle calculation, the (l 00) SC possesses a higher charge distribution density and a wider dispersion distribution than (00 l) SC, suggesting that more electrons in the (l 00) SC can be excited in a wider range. The tighter arrangement of Cs+ and [BiI6]− octahedra in the (l 00) SC than (00 l) SC leads to the anisotropic photoelectric performance in (l 00) and (00 l) Cs3Bi2I9 SCs. Our results provide a strategy for the oriental growth of Cs3Bi2I9 SCs and the design of anisotropic optoelectronic devices with excellent performance. [ABSTRACT FROM AUTHOR]

The rapidly‐developed nanophotonics enable the realization of highly‐precise, ultra‐compact full Stokes polarimeters. However, realizing large‐area well‐designed structures with complex chiral morphology and subwavelength size is still a challenge to the current micro/nano‐engineering technology. Here, one high‐performance, ultra‐compact, and one‐shot full‐Stokes polarimeters in the ultraviolent waveband for the first time based on the long‐range disorder chiral shells fabricated by the micro‐sphere lithography are experimentally demonstrated. This chiral–shell monolayer owns strong and distinct optical chirality and anisotropy between the shells in adjacent micro‐domains and thus leads to different photo‐electric responses to the incident polarized lights for the photodetectors placed underneath. Through employing the residual convolutional neural network to extract the Stokes parameter Ŝ$\hat{S}$, a small detection averaged mean square error (MSE) of <0.5% from 316 nm to 410 nm is realized, and the minimum MSEs at 361 nm can reach recorded values of ≈0.02% (S1${{S}_1}$), 0.017% (S2${{S}_2}$), and 0.014% (S3${{S}_3}$). The influence of exposure time and pixel number, and the system stability are systematically investigated. This work brings new inspiration for the disorder structures based on Bottom‐Up methods, high‐performance polarimeters, and polarization imaging devices. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed in extreme conditions, for example, flame detection and space exploration, face the challenges of performance degradation caused by high/low‐temperature transformation. Here, DUV photodetectors are tailored with high durability and stability by one‐step‐grown β‐Ga2O3 films via pulsed laser deposition. A high‐oxygen‐pressure scheme effectively addresses the issue of film‐free deposition at specifically high temperatures, facilitating the formation of polycrystalline high‐resistivity β‐Ga2O3 films. As a result, the devices exhibit outstanding performance, including a low dark current (4.4 pA @30 V), high photoresponsivity (147.36 A W−1), and fast response time (3.1/22.6 ms). Additionally, the photoresponse performance shows minimal degradation at high temperatures up to 300 °C and even improves at low temperatures down to −100 °C, ranking it among the most robust DUV photodetectors. The mechanism of photoresponse, involving the exciton formation, bandgap evolution, carrier‐phonon scatter, etc., is also elucidated in a wide temperature range. This work provides an efficient solution for developing robust Ga2O3 DUV photodetectors with excellent performance for extreme‐condition applications. [ABSTRACT FROM AUTHOR]

Circularly polarized light (CPL) detection is of great significance in various applications such as drug identification, sensing and imaging. Atomically precise chiral metal nanoclusters with intense circular dichroism (CD) signals are promising candidates for CPL detection, which can further facilitate device miniaturization and integration. Herein, we report the preparation of a pair of optically active chiral silver nanoclusters [Ag7(R/S‐DMA)2(dpppy)3] (BF4)3 (R/S‐Ag7) for direct CPL detection. The crystal structure and molecular formula of R/S‐Ag7 clusters are confirmed by single‐crystal X‐ray diffraction and high‐resolution mass spectrometry. R/S‐Ag7 clusters exhibit strong CD spectra and CPL both in solution and solid states. When used as the photoactive materials in photodetectors, R/S‐Ag7 enables effective discrimination between left‐handed circularly polarized and right‐handed circularly polarized light at 520 nm with short response time, high responsivity and considerable discrimination ratio. This study is the first report on using atomically precise chiral metal nanoclusters for CPL detection. [ABSTRACT FROM AUTHOR]