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By employing element-specific spectroscopy in the ultrafast time scale in Fe1-xNix alloys, we find a composition-dependent effect in the demagnetization that we relate to electron-magnon scattering and changes in the spin-wave stiffness. In all six measured alloys of different composition, the demagnetization of Ni compared to Fe exhibits a delay, an effect which we find is inherent in alloys but not in elemental Fe and Ni. Using a model based on electron-magnon scattering, we extract a spin-wave stiffness from all alloys that show excellent agreement with values obtained from other techniques.

We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic x-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra. The dd excitation energies are similar on the two sides of the ferromagnetic transition temperature, T-C similar to 61 K, although MD in RIXS is predominant at 0.4 T magnetic field below TC. This demonstrates that the ferromagnetic superexchange interaction that is responsible for the interatomic exchange field is vanishingly small compared with the local exchange field that comes from exchange and correlation interaction among the interacting Cr 3d orbitals. The recorded RIXS spectra reported here reveal clearly resolved Cr 3d intraorbital dd excitations that represent transitions between electronic levels that are heavily influenced by dynamic correlations and multiconfiguration effects. Our calculations taking into account the Cr 3d hybridization with the ligand valence states and the full multiplet structure due to intra-atomic and crystal field interactions in Oh and D3d symmetry clearly reproduced the dichroic trend in experimental RIXS spectra.

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS2 by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d5/2 core peak at 230.1 eV emerges in the annealed MoS2 associated with nonstoichiometric MoSx (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm-1 peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 1014 cm-2, we observe a defect peak at ∼1.72 eV (referred to as LXD) at room temperature in the photoluminescence (PL) spectrum. The LXD peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LXD emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LXD peak can be suppressed by annealing the defective MoS2 in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS2 are influenced by sulfur vacancies at room and low temperatures., QC 20230911

The prototypical chalcogenide perovskite BaZrS3, characterized by its direct band gap, exceptionally strong light-harvesting ability, and good carrier transport properties, provides fundamental prerequisites for a promising photovoltaic material. This inspired the synthesis of BaZrS3 in the form of thin films, using sputtering and rapid thermal processing, aimed at device fabrication for future optoelectronic applications. Using a combination of short- and long-range structural information from X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD), we have elucidated how, starting from a random network of Ba, Zr, and S atoms, thermal treatment induces crystallization and growth of BaZrS3 and explained its impact on the observed photoluminescence (PL) properties. We also provide a description of the electronic structure and substantiate the surface material chemistry using a combination of depth-dependent photoelectron spectroscopy (PES) using hard X-ray (HAXPES) and traditional Al K alpha radiation. From the knowledge of the optical band gap of BaZrS3 thin films, synthesized at an optimal temperature of 900 C-degrees, and our estimation of the valence band edge position with respect to the Fermi level, one may conclude that these semiconductor films are intrinsic in nature with a slight n-type character. A detailed understanding of the growth mechanism and electronic structure of BaZrS3 thin films helps pave the way toward their utilization in photovoltaic applications.

Electrochemical impedance spectroscopy (EIS) is a commonly used steady-state technique to examine the internal resistance of electron-transfer processes in solar cell devices, and the results are directly related to the photovoltaic performance. In this study, EIS was performed to study the effects of accelerated ageing, aiming for insights into the degradation mechanisms of dye-sensitized solar cells (DSSCs) containing cobalt tris(bipyridine) complexes as redox mediators. Control experiments based on aged electrolytes differing in concentrations of the redox couple components and cation co-additives were conducted to reveal the correlation of the cell degradation with external and internal properties. The failure modes of the cells emerged as changes in the kinetics of charge- and ion-transfer processes. An insufficient concentration of the redox complexes, in particular Co(iii), was found to be the main reason for the inferior performance after ageing. The related characterization of electrolytes aged outside the solar cell devices confirms the loss of active Co(iii) complexes in the device electrolytes. A new EIS feature at low frequencies emerged during ageing and was analysed. The new EIS feature demonstrates the presence of an unexpected rate-limiting, charge-transfer process in aged devices, which can be attributed to the TiO2/electrolyte interface. High-resolution fluorescence detected X-ray absorption spectroscopy (HERFD-XAS) was performed to identify the reduction of a part of Co(iii) to Co(II) after ageing, by investigating the Co K absorption edge. The HERFD-XAS data suggested a partial reduction of Co(iii) to Co(ii), accompanied by a difference in symmetry of the reduced species.

QC 20230613

We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy Co2FeAl, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time (tau(M)) in films of Co2FeAl is almost independent of varying structural order, and that it is similar to that in elemental 3d ferromagnets. In contrast, the slower process of magnetization recovery, specified by tau(R), is found to occur on picosecond time scales, and is demonstrated to correlate strongly with the Gilbert damping parameter (alpha). Based on these results we argue that for Co2FeAl the remagnetization process is dominated by magnon dynamics, something which might have general applicability.

The valence electronic structure of the half-metallic double perovskite Sr2FeMoO6 forms from a strongly hybridized band in the spin-down channel of Fe 3d and Mo 4d states that provides metallic conductivity and a gapped spin-up channel. The ground-state description has previously been explored in terms of many-body interactions where local and nonlocal interactions produce states with a combination of a charge-transfer configuration and intersite charge fluctuations. Here, we provide a qualitative understanding on nonlocal effects in Sr2FeMoO6 using a combination of core-level X-ray spectroscopies, specifically X-ray absorption, emission, and photoelectron spectroscopies. Our spectroscopic data indicate intersite Fe 4p-O 2p-Mo 4d interactions to be the origin of these nonlocalized transitions. Close to the Fermi level, this interaction is dominated by Mo 4d-O 2p character. When our data are compared against first-principles electronic structure calculations, we conclude that a full understanding of the nature of these states requires a spin-resolved description of the hybridization functions and that the nonlocal screening occurs predominantly through hybridization in the minority spin channel of the Mo 4d bands.

We have investigated the doping-induced local structural and electronic effects in the recently developed low band gap room temperature ferroelectric Mn-Nb co-doped BaTiO3. Experimental and theoretical Raman spectroscopies are utilized to quantify the Ti off-centering, identified to be the intrinsic origin of ferroelectricity in these systems. Mn and Nb exhibit contrasting doping behaviors that have remarkable effects on BaTiO3 functionality. Jahn-Teller distorted Mn3+ is primarily associated with lowering of the bulk band gap, while charge-compensating Nb5+ off-centers within the O-6 octahedra, creating a polar mode that stabilizes the ferroelectric ground state. The charge neutral aliovalent Mn3+-Nb5+ pair effectively couples to the inherent ferroelectric instability of the BaTiO3 lattice, restoring some spontaneous polarization lost by doping Mn3+ (d(4)) ions at Ti4+ (d(0)) sites.

The low-dimensional magnetic systems tend to reveal exotic spin-liquid ground states or form peculiar types of long-range order. Among systems of vivid interest are those characterized by the triangular motif in two dimensions. The realization of either ordered or disordered ground state in triangular, honeycomb, or kagome lattices is dictated by the competition of exchange interactions, also being sensitive to anisotropy and the spin value of magnetic ions. While the low-spin Heisenberg systems may arrive to a spin-liquid long-range entangled quantum state with emergent gauge structures, the high-spin Ising systems may establish the rigid noncollinear structures. Here, we present the case of chiral noncoplanar inverted umbrella-type ferrimagnet formed in cobalt nitrate Co(NO3)(2) below T-C = 3 K with the comparable spin and orbital contributions to the total magnetic moment.

Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while being an exceptionally resilient material for flexible nanoelectronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-spin sensors, as well as a unique platform to explore pure spin current based operations and low-power 2D flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. Despite the rough topography of the flexible substrates, these circuits prepared with chemical vapor deposited monolayer graphene reveal an efficient room temperature spin transport with distinctively large spin diffusion coefficients ∼0.2 m2 s–1. Compared to earlier graphene devices on Si/SiO2 substrates, such values are up to 20 times larger, leading to one order higher spin signals and an enhanced spin diffusion length ∼10 μm in graphene-based nonlocal spin valves fabricated using industry standard systems. This high performance arising out of a characteristic substrate terrain shows promise of a scalable and flexible platform towards flexible 2D spintronics. Our innovation is a key step for the exploration of strain-dependent 2D spin phenomena and paves the way for flexible graphene spin memory–logic units and planar spin sensors., De 3 första författarna delar förstaförfattarskapet.

Liquid-state ligand exchange provides an efficient approach to passivate a quantum dot (QD) surface with small binding species and achieve a QD ink toward scalable QD solar cell (QDSC) production. Herein, experimental studies and theoretical simulations are combined to establish the physical principles of QD surface properties induced charge carrier recombination and collection in QDSCs. Ammonium iodide (AI) is used to thoroughly replace the native oleic acid ligand on the PbS QD surface forming a concentrated QD ink, which has high stability of more than 30 d. The ink can be directly applied for the preparation of a thick QD solid film using a single deposition step method and the QD solid film shows better characteristics compared with that of the film prepared with the traditional PbX2 (X = I or Br) post-treated QD ink. Infrared light-absorbing QDSC devices are fabricated using the PbS-AI QD ink and the devices give a higher photovoltaic performance compared with the devices fabricated with the traditional PbS-PbX2 QD ink. The improved photovoltaic performance in PbS-AI-based QDSC is attributed to diminished charge carrier recombination induced by the sub-bandgap traps in QDs. A theoretical simulation is carried out to atomically link the relationship of QDSC device function with the QD surface properties.

Metal halide compounds with photovoltaic properties prepared from solution have received increased attention for utilization in solar cells. In this work, low-toxicity cesium bismuth iodides are synthesized from solution, and their photovoltaic and, optical properties as well as electronic and crystal structures are investigated. The X-ray diffraction patterns reveal that a CsI/BiI3 precursor ratio of 1.5:1 can convert pure rhombohedral BiI3 to pure hexagonal Cs3Bi2I9, but any ratio intermediate of this stoichiometry and pure BiI3 yields a mixture containing the two crystalline phases Cs3Bi2I9 and BiI3, with their relative fraction depending on the CsI/BiI3 ratio. Solar cells from the series of compounds are characterized, showing the highest efficiency for the compounds with a mixture of the two structures. The energies of the valence band edge were estimated using hard and soft X-ray photoelectron spectroscopy for more bulk and surface electronic properties, respectively. On the basis of these measurements, together with UV-vis-near-IR spectrophotometry, measuring the band gap, and Kelvin probe measurements for estimating the work function, an approximate energy diagram has been compiled clarifying the relationship between the positions of the valence and conduction band edges and the Fermi level.

We explore the effects of electron doping in lanthanum ferrite, LaFeO3 by doping Mo at the Fe sites. Based on magnetic, transport, scanning tunneling spectroscopy, and x-ray photoelectron spectroscopy measurements, we find that the large gap, charge-transfer, antiferromagnetic (AFM) insulator LaFeO3 becomes a small gap AFM band insulator at low Mo doping. With increasing doping concentration, Mo states, which appear around the Fermi level, is broadened and become gapless at a critical doping of 20%. Using a combination of calculations based on density functional theory plus Hubbard U (DFT+U) and x-ray absorption spectroscopy measurements, we find that the system shows charge disproportionation (CD) in Fe ions at 25% Mo doping, where two distinct Fe sites, having Fe2+ and Fe3+ nominal charge states appear. A local breathing-type lattice distortion induces the charge disproportionation at the Fe site without destroying the antiferromagnetic order. Our combined experimental and theoretical investigations establish that the Fe states form a CD antiferromagnet at 25% Mo doping, which remains insulating, while the appearance of Mo states around the Fermi level is showing an indication towards the insulator-metal transition.

Using the local density approximation plus dynamical mean-field theory (LDA+DMFT), we have computed the valence-band photoelectron spectra and magnetic excitation spectra of BiFeO3, one of the most studied multiferroics. Within the DMFT approach, the local impurity problem is tackled by the exact diagonalization solver. The solution of the impurity problem within the LDA+DMFT method for the paramagnetic and magnetically ordered phases produces result in agreement with the experimental data on electronic and magnetic structures. For comparison, we also present results obtained by the LDA+U approach which is commonly used to compute the physical properties of this compound. Our LDA+DMFT derived electronic spectra match adequately with the experimental hard x-ray photoelectron spectroscopy and resonant photoelectron spectroscopy for Fe 3d states, whereas the LDA+U method fails to capture the general features of the measured spectra. This indicates the importance of accurately incorporating the dynamical aspect of electronic correlation among Fe 3d orbitals to reproduce the experimental excitation spectra. Specifically, the LDA+DMFT derived density of states exhibits a significant amount of Fe 3d states at the position of Bi lone pairs, implying that the latter are not alone in the spectral scenario. This fact might modify our interpretation about the origin of ferroelectric polarization in this material. Our study demonstrates that the combination of orbital cross sections for the constituent elements and broadening schemes for the spectral functions are crucial to explain the detailed structures of the experimental electronic spectra. Our magnetic excitation spectra computed from the LDA+DMFT result conform well with the inelastic neutron scattering data.

Solution-processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI3 perovskite (CsPbI3-P) coating on PbS CQDs with a low-temperature, solution-processed approach is reported. The PbS CQD solar cell with CsPbI3-P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long-term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI3-P coating, and the results suggest that the lattice coherence between CsPbI3-P and PbS results in epitaxial induced growth of the CsPbI3-P coating. The improved passivation significantly diminishes the sub-bandgap trap-state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.

Bismuth halide compounds as a non-toxic alternative are increasingly investigated because of their potential in optoelectronic devices and their rich structural chemistry. Hard X-ray spectroscopy was applied to the ternary bismuth halide Cs3Bi2I9 and its related precursors BiI3 and CsI to understand its electronic structure at an atomic level. We specifically investigated the core levels and valence band using X-ray photoemission spectroscopy (PES), high-resolution X-ray absorption (HERFD-XAS), and resonant inelastic X-ray scattering (RIXS) to get insight into the chemistry and the band edge properties of the two bismuth compounds. Using these element specific X-ray techniques, our experimental electronic structures show that the primary differences between the two bismuth samples are the position of the iodine states in the valence and conduction bands and the degree of hybridization with bismuth lone pair (6s(2)) states. The crystal structure of the two layered quasi-perovskite compounds plays a minor role in modifying the overall electronic structure, with variations in bismuth lone pair states and iodine band edge states. Density Functional Theory (DFT) calculations are used to compare with experimental data. The results demonstrate the effectiveness of hard X-ray spectroscopies to identify element specific bulk electronic structures and their use in optoelectronic devices.

We recently demonstrated the lowest bandgap bulk ferroelectric material, BaTi1-x(Mn1/2Nb1/2)xO3, a promising candidate material for visible light absorption in opto- electronic devices. Using a combination of x-ray spectroscopies and density functional theory (DFT) calculations, we here elucidate this compound’s electronic structure and the modifications induced by Mn doping. In particular, we are able to rationalize how this compound retains its ferroelectricity even through a significant reduction of the optical gap upon Mn doping. The local electronic structure and atomic coordination are investigated using x-ray absorption at the Ti K, Mn K, and O K edges, which suggests only small distortions to the parent tetragonal ferroelectric system, BaTiO3, thereby providing a clue to the substantial retention of ferroelectricity in spite of doping. Features at the Ti K edge, which are sensitive to local symmetry and an indication of Ti off-centering within the Ti-O6 octahedra, show modest changes with doping and strongly corroborates with our measured polarization values. Resonant photoelectron spectroscopy results suggest the origin of the reduction of the bandgap in terms of newly created Mn d bands that hybridize with O 2p states. X-ray absorption spectra at the O K-edge provide evidence for new states below the conduction band of the parent compound, illustrating additional contributions facilitating bandgap reduction., Corection in: EPL, Volume: 124, Issue: 6, Article Number: 69901, DOI: 10.1209/0295-5075/124/69901

Layered two-dimensional (2D) hybrid organic-inorganic perovskites (HOP) are promising materials for light-harvesting applications because of their chemical stability, wide flexibility in composition and dimensionality, and increases in photovoltaic power conversion efficiencies. Three 2D lead iodide perovskites were studied through various X-ray spectroscopic techniques to derive detailed electronic structures and band energetics profiles at a titania interface. Core-level and valence band photoelectron spectra of HOP were analyzed to resolve the electronic structure changes due to the reduced dimensionality of inorganic layers. The results show orbital narrowing when comparing the HOP, the layered precursor PbI2, and the conventional 3D (CH3NH3)PbI3 such that different localizations of band edge states and narrow band states are unambiguously due to the decrease in dimensionality of the layered HOPs. Support from density functional theory calculations provide further details on the interaction and band gap variations of the electronic structure. We observed an interlayer distance dependent dispersion in the near band edge electronic states. The results show how tuning the interlayer distance between the inorganic layers affects the electronic properties and provides important design principles for control of the interlayer charge transport properties, such as the change in effective charge masses as a function of the organic cation length. The results of these findings can be used to tune layered materials for optimal functionality and new applications., De två första författarna delar förstaförfattarskapet.